Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three experiments at three different temperatures are necessary in order to obtain the acceleration factor which relates the time at the stress level with the time at nominal working conditions. . However, up to now only the test at the highest temperature has finished. Therefore, we can not provide complete reliability information but we have analyzed the life data and the failure mode of the solar cells inside the climatic chamber at the highest temperature. The failures have been all of them catastrophic. In fact, the solar cells have turned into short circuits. We have fitted the failure distribution to a two parameters Weibull function. The failures are wear-out type. We have observed that the busbar and the surrounding fingers are completely deteriorate

Recuerdo del III centenario del Quijote

Contiene poemas dedicados a Cervantes y su obra

Creacion, antiguedad y privilegios de los titulos de Castilla

Sign.: []7, *-5*2, [calderón]1, 2[calderón]3, A-Z4, 2A-2Z4, 3A-3T4, 3V-3Z2, 4A-4C2

Tratado de la Nobleza de la Corona de Aragon : especialmente del Reyno de Valencia, comparada con la de Castilla, para ilustracion de la Real Cedula del Señor Don Luis I de 14 de Agosto de 1724

Contiene: Apendice y coleccion de los documentos y notas pertencientes al Tratado de la nobleza de la Corona de Aragon ..

Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation

In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

In situ control of the GE(100)surface domain structure for III-V multijunction solar cells

Vicinal Ge(100) is the common substrate for state of the art multi-junction solar cells grown by metal-organic vapor phase epitaxy (MOVPE). While triple junction solar cells based on Ge(100) present efficiencies mayor que 40%, little is known about the microscopic III-V/Ge(100) nucleation and its interface formation. A suitable Ge(100) surface preparation prior to heteroepitaxy is crucial to achieve low defect densities in the III-V epilayers. Formation of single domain surfaces with double layer steps is required to avoid anti-phase domains in the III-V films. The step formation processes in MOVPE environment strongly depends on the major process parameters such as substrate temperature, H2 partial pressure, group V precursors [1], and reactor conditions. Detailed investigation of these processes on the Ge(100) surface by ultrahigh vacuum (UHV) based standard surface science tools are complicated due to the presence of H2 process gas. However, in situ surface characterization by reflection anisotropy spectroscopy (RAS) allowed us to study the MOVPE preparation of Ge(100) surfaces directly in dependence on the relevant process parameters [2, 3, 4]. A contamination free MOVPE to UHV transfer system [5] enabled correlation of the RA spectra to results from UHV-based surface science tools. In this paper, we established the characteristic RA spectra of vicinal Ge(100) surfaces terminated with monohydrides, arsenic and phosphorous. RAS enabled in situ control of oxide removal, H2 interaction and domain formation during MOVPE preparation.

Decada legal, en que contrahidas a diez las Leyes de estos Reynos, se van poniendo por resumen, y baxo un contexto las de cada parte de la Decada : Tomo primero ; que contiene una idea de la legislacion ... mostrando las epocas de su formacion ... con las leyes Iª, IIª, IIIª y IVª de ella

Contiene: Leyes religiosa y regia de Castilla : primera y segunda de la Decada ; Leyes Magistratoria y Popular : tercera y quarta de la Decada

Bradyrhizobium sp. lmjc necesita un sistema de secreción tipo III para nodular eficientemente al altramuz valenciano (Lupinus Mariae-Josephae).

La mayoría de las leguminosas establecen una simbiosis con bacterias denominadas rizobios que fijan dinitrógeno en estructuras especializadas llamadas nódulos a cambio de fotosintatos. Existen varios elementos que hacen esta interacción específica y efectiva, entre ellos se encuentra la presencia, en algunos rizobios, de estructuras tubulares que introducen proteínas de la bacteria (efectores) en el citoplasma de células vegetales. En nuestro estudio de la interacción de la bacteria designada como Bradyrhizobium sp. LmjC con el altramuz valenciano L. mariae-josephae Pascual, hemos demostrado que existe uno de esos sistemas de secreción de tipo III y que éste es esencial para una simbiosis eficiente. Además hemos iniciado la caracterización de un posible efector denominado NopE y por último estamos estudiando otros rasgos fenotípicos de dicha bacteria como su resistencia a antibióticos, su crecimiento con distintas fuentes de carbono, su tiempo de generación y otras pruebas bioquímicas como la actividad ureasa.

Reales ordenanzas obtenidas por el gremio de cortantes de ... Valencia ... : Aprobadas por el ... Supremo Consejo de Castilla en 14 de Enero 1740 ..

Índice

Relacion i memorial ajustado a ... los autos, e informaciones hechas por ... Don Rodrigo Marin i Rubio Obispo ... de Jaen, i a pedimiento de la ... i que se declaren por de dicho santo martyr los huessos que se hallaron en la bobeda de el altar mayor de la ... cathedral de Baeza ... el año ... de mil setenciento i veinte i nueve

Sign.: A-L2

Copia de la representacion de la Diputacion de Sanidad de esta ... ciudad de Valencia a la Suprema Junta con motivo de la epidemia de Tercianas padecida el otoño del año 1784 : de las cartas ... de la Cédula de los señores del Real Consejo de Castilla, que comprehende las Providencias tomadas, para su remedio, en virtud de Orden de S. M. ..

Contiene: Cedula de Carlos III, fechada en el Pardo a 13 de febrero 1785

Dissertacion Historica I : que excluye la existencia de monges Basilios en el antiguo Venerable Santuario de el Santo Sepulcro de Valencia contra las noticias falsas ... del Dr. Agustín Sales, en el Cap. IV de las Memorias del mismo Santo Sepulcro

Contiene : Dissertacion historica II: que demuestra aver cursado el Patriarca Santo Domingo los estudios de artes, y de theologia en la ciudad de Palencia ... Obispado, y escritos de Idacio Galiciano el Historico ... ; Dissertacion III : curiosa, sobre la patria, obispado, y escritos de Idacio Galiciano el Hitorico ..