Effects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursors

We report the results of a study of the sulphurization time effects on Cu2ZnSnS4 absorbers and thin film solar cells prepared from dc-sputtered tackedmetallic precursors. Three different time intervals, 10 min, 30min and 60 min, at maximum sulphurization temperature were considered. The effects of this parameter' change were studied both on the absorber layer properties and on the final solar cell performance. The composition, structure, morphology and thicknesses of the CZTS layers were analyzed. The electrical characterization of the absorber layer was carried out by measuring the transversal electrical resistance of the samples as a function of temperature. This study shows an increase of the conductivity activation energy from 10 meV to 54meV for increasing sulphurization time from 10min to 60min. The solar cells were built with the following structure: SLG/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Ni:Al grid. Several ac response equivalent circuit models were tested to fit impedance measurements. The best results were used to extract the device series and shunt resistances and capacitances. Absorber layer's electronic properties were also determined using the Mott–Schottky method. The results show a decrease of the average acceptor doping density and built-in voltage, from 2.0 1017 cm−3 to 6.5 1015 cm−3 and from 0.71 V to 0.51 V, respectively, with increasing sulphurization time. These results also show an increase of the depletion region width from approximately 90 nm–250 nm.

Optimização da gestão de energia e da segurança de um edifício baseada num sistema técnico centralizado

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Mecânica Perfil Energia, Refrigeração e Climatização

Admittance spectroscopy of Cu2ZnSnS4 based thin film solar cells

In this report, we propose an AC response equivalent circuit model to describe the admittance measurements of Cu2ZnSnS4 thin film solar cell grown by sulphurization of stacked metallic precursors. This circuit describes the contact resistances, the back contact, and the heterojunction with two trap levels. The study of the back contact resistance allowed the estimation of a back contact barrier of 246 meV. The analysis of the trap series with varying temperature revealed defect activation energies of 45 meV and 113 meV. The solar cell’s electrical parameters were obtained from the J-V curve: conversion efficiency, 1.21%; fill factor, 50%; open circuit voltage, 360 mV; and short circuit current density, 6.8 mA/cm2.

Cu2ZnSnS4 solar cells prepared with sulphurized dc-sputtered stacked metallic precursors

In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis. The hole density, space charge region width and band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an opencircuit voltage of 345 mV, a short-circuit current density of 4.42 mA/cm2, a fill factor of 44.29% and an efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm2.

Algoritmos evolutivos na determinação das máximas injeções nodais em redes de energia elétrica

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica - Ramo de Energia

Growth and characterization of Cu2ZnSn(S,Se)4 thin films for solar cells

Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with their band gap energies around 1.45 eV and 1.0 eV, respectively, can be used as the absorber layer in thin film solar cells. By using a mixture of both compounds, Cu2ZnSn(S,Se)4 (CZTSSe), a band gap tuning may be possible. The latter material has already shown promising results such as solar cell efficiencies up to 10.1%. In this work, CZTSSe thin films were grown in order to study its structure and to establish the best growth precursors. SEM micrographs reveal an open columnar structure for most samples and EDS composition profiling of the cross sections show different selenium gradients. X-ray diffractograms show different shifts of the kesterite/stannite (1 1 2) peak, which indicate the presence of CZTSSe. From Raman scattering analysis, it was concluded that all samples had traces of CZTS and CZTSSe. The composition of the CZTSSe layer was estimated using X-ray diffraction and Raman scattering and both results were compared. It was concluded that Se diffused more easily in precursors with ternary Cu–Sn–S phases and metallic Zn than in precursors with ZnS and/or CZTS already formed. It was also showed that a combination of X-ray diffraction and Raman scattering can be used to estimate the ratio of S per Se in CZTSSe samples.

Estratégias de comercialização de energia elétrica em mercados liberalizados

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Energia

Aumento de energia renovável na Ilha da Madeira: proposta integrada para o setor dos transportes e da geração de energia elétrica

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Energia

Aproveitamento da energia das correntes marítimas

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica

Estratégias de investimento em mercados liberalizados de energia elétrica

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo Energia

Avaliação económica de sistemas solares fotovoltaicos residenciais

Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica no Ramo de Energia

Auditoria energética e plano de racionalização de energia

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Mecânica

Previsão de curto prazo do consumo de energia elétrica

Dissertação para a obtenção do grau de Mestre em Engenharia Electrotécnica - Ramo de Energia

Energy storage systems (sistemas de armazenamento de energia)

O armazenamento de energia pode ser efetuado sobre cinco categorias, designadamente, elétrica, eletromecânica, mecânica, térmica e química. Contudo, o assunto aqui debatido é sobre meios de armazenamento de energia elétrica, sendo que o armazenamento de eletricidade é usualmente efetuado recorrendo a outros géneros de energia, tais como, química, mecânica, térmica ou, até, em energia potencial. [1]. Há nos dias de hoje uma crescente preocupação na forma como é gerido o setor elétrico, uma vez que este implica um elevado impacto ambiental. Neste sentido tem havido algumas alterações, nomeadamente, no que diz respeito à produção de energia elétrica. A utilização de energias renováveis estão cada vez mais presentes na produção de eletricidade (Figura 1), pois permitem diminuir de forma indireta a utilização dos combustíveis fósseis, sendo esta a principal vantagem face às centrais de produção convencionais.

A pedagogia do conceito de energia: contributo para a utilização formativa do conceito de energia

Dissertação de mestrado em Ciências da Educação: área de Educação e Desenvolvimento