O que os olhos veem, o coração sente: estudo sobre a detecção de malformação fetal na experiência de gestantes na Bahia.

Esta tese discute o impacto do Diagnóstico de Malformação fetal na experiência das gestantes usuárias do SUS na Bahia, destacando as noções de dia-gnosis e pro-gnosis desenvolvidas por Gross e Shuval (2008) de forma associada à medicina do risco no encontro médico-paciente. Destaca o discurso biomédico na formatação diagnóstica, as diferentes percepções de risco e o forte engajamento das usuárias frente às tecnologias pré-natais e intervenções cirúrgicas neonatais, caucionado na esperança de que o avanço da ciência seja capaz de reverter ou abrandar a condição do seu feto/bebê. È diante da responsabilização da mulher por não ter produzido um feto/bebê saudável, mas um feto/bebê malformado, que se observa a prevalência de normas culturais e de gênero que conferem à maternidade um lugar de autossacrificio, de dedicação e criação dos filhos, como também status social O espaço pré-natal é marcado pela ausência de discussão a respeito do prognóstico de tais condições, com a consequente busca pelas gestantes do conhecimento por meio da internet, da opinião do marido e da crença religiosa que servem de alicerce para lidar com a antecipação da deficiência. As gestantes acreditam ser este um desígnio de Deus, uma espécie de provação e uma prova de amor incondicional ao futuro filho com deficiência (que poderá ou não sobreviver). A maioria das gestantes, 20 entrevistadas, prefere, contudo, ter um filho com deficiência do que sofrer sua perda. Em outra vertente, a tese analisa a forma como se organiza o sistema de saúde quanto à detecção de uma malformação congênita, apontando a precariedade da rede de atenção básica quanto à qualificação dos profissionais e o devido encaminhamento referente ao serviço especializado. A tecnologia de visualização o ultrassom obstétrico é a primordial ferramenta para detecção de alguma alteração fetal, porém somente ocorre o esclarecimento do diagnóstico de malformação fetal no serviço público de referência em medicina fetal em Salvador, Bahia. Destaca-se a falta de uma política pública do Ministério da Saúde que norteie o desenvolvimento da medicina fetal no Brasil, haja vista os diferentes impactos diante das tecnologias de inovação em saúde que geram vulnerabilidades e desigualdades sociais. Enfatiza-se a necessidade de uma revisão quanto à regulamentação do uso do ultrassom obstétrico que impeça o uso abusivo ou sua omissão diante dos crescentes casos de anomalias congênitas.

Tetrahedral amorphous carbon-silicon heterojunction band energy offsets

Non-hydrogenated tetrahedral amorphous carbon (ta-C) has shown superior field emission characteristics. The understanding of the emission mechanism has been hindered by the lack of any directly measured data on the band offsets between ta-C and Si. In this paper results from direct in situ X-ray photoemission spectroscopy (XPS) measurements of the band-offset between ta-C and Si are reported. The measurements were carried out using a filtered cathodic vacuum arc (FCVA) deposition system attached directly to an ultra-high vacuum (UHV) XPS chamber via a load lock chamber. Repeated XPS measurements were carried out after monolayer depositions on in situ cleaned Si substrates. The total film thickness for each set of measurements was approximately 5 nm. Analysis of the data from undoped ta-C on n and p Si show the unexpected result that the conduction band barrier between Si and ta-C remains around 1.0 eV, but that the valence band barrier changes from 0.7 to 0.0 eV. The band line up derived from these barriers suggests that the Fermi level in the ta-C lies 0.3 eV above the valence band on both p and n+Si. The heterojunction barriers when ta-C is doped with nitrogen are also presented. The implications of the heterojunction energy barrier heights for field emission from ta-C are discussed.

p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2-D numerical simulations and experimental fabrication.

Single crystal diamond schottky diodes - Practical design considerations for enhanced device performance

Novel alternatives to the conventional single crystal diamond Schottky metal-intrinsic-p+ (m-i-p+) diode is presented in this work. The conduction mechanism of the device is analysed and structural modifications to enhance its performance are proposed. The periodic inclusion of highly p+ doped thin δ-layers and p+ spots in the intrinsic voltage blocking layer of the diode drastically improves the forward performance of these devices enhancing the forward current of the device by a factor of 10 - 17 with a maximum forward current density of ̃ 40 A/cm 2 for a 2 kV device.

Anomalous n-type electrical behaviour of Pd-contacted CNTFET fabricated on small-diameter nanotube.

A Pd-contacted dopant-free CNTFET with small-diameter (0.57 nm) carbon nanotube showing an anomalous n-type electrical characteristic is reported for the first time. This observed behaviour is attributed to a carbon nanotube work function higher than (or close to) palladium as well as a large hole-to-electron effective mass ratio of approximately 2.5 predicted by hybridization in small-diameter nanotubes. A variation of the conduction type with temperature is also observed and is attributed to an increase of the palladium work function and decrease of the CNT work function with increasing temperature.

Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.

Defect and disorder reduction by annealing in hydrogenated tetrahedral amorphous carbon

Hydrogenated tetrahedral amorphous carbon (ta-C:H) is a form of diamond-like carbon with a high sp3 content (>60%), grown here using a plasma beam source. Information on the behaviour of hydrogen upon annealing is obtained from effusion measurements, which show that hydrogen does not effuse significantly at temperatures less than 500 °C in films grown using methane and 700 °C in films grown using acetylene. Raman measurements show no significant structural changes at temperatures up to 300 °C. At higher temperatures, corresponding to the onset of effusion, the Raman spectra show a clustering of the sp2 phase. The density of states of ta-C:H is directly measured using scanning tunnelling spectroscopy. The measured gradients of the conduction and valence band tails increase up to 300 °C, confirming the occurrence of band tail sharpening. Examination of the photoluminescence background in the Raman spectra shows an increase in photoluminescence intensity with decreasing defect density, providing evidence that paramagnetic defects are the dominant non-radiative recombination centres in ta-C:H.

Carbon based bottom gate thin film transistor

This paper describes the fabrication and characterization of a carbon based, bottom gate, thin film transistor (TFT). The active layer is formed from highly sp2 bonded nitrogenated amorphous carbon (a-C:N) which is deposited at room temperature using a filtered cathodic vacuum arc technique. The TFT shows p-channel operation. The device exhibits a threshold voltage of 15 V and a field effect mobility of 10-4 cm2 V-1 s-1 . The valence band tail of a-C:N is observed to be much shallower than that of a-Si:H, but does not appear to severely impede the shift of the Fermi level. This may indicate that a significant proportion of the a-C tail states can still contribute to conduction.

Physical modelling of large area 4H-SiC PiN diodes

The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 °C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area. © 2009 IEEE.

Studies on threshold current densities for convulsion of fish using a square wave stimulator

The threshold current densities and voltage tensions (body voltages) between the head and tail for bringing about distinct reactions in Salmo irideus, Cyprinus Carpio, Tinea tinca, Gasterosteus aculeatus and Salmo fario were studied. In C. carpio and T. tinca, absolute current densities required decreased with increase in length of fish. Threshold current densities for different reactions of fish increased with rise in water temperature and conductivity of surrounding medium except in case of T. tinca where low current densities were sufficient in higher conductivity of water. Impulse D.C. was superior to continuous D.C. Better effect was noticed in fishes in lower current densities when their bodies were parallel to the lines of current conduction.

Response of fishes to the underwater D.C. field

Response to external electric field (D. C.) of three different varieties of fish namely Puntius ticto, Heteropneustis fossilis and Tilapia mossambica having different anatomical and behavioural characteristics were studied. Clearly distinguished reactions occurred one after another m all the varieties of fish with the increase in field intensity with minor specific variations. These reactions can be broadly classified into initial start (first reaction), forced swimming (galvanotaxis), slackening of body muscle (galvanonarcosis) and state of muscular rigidity (tetanus). The orientation of the organism (projection of nervous element) to the surrounding field has been found to have important bearing on the behaviour reactions. Clearly differentiated anodic taxis and true narcosis set in when fish body axis was parallel to the lines of current conduction. But with greater angle between the body axis and the current lines, fish did not show well marked reactions. Fish body, when perpendicular to current lines responded for anodic curvature and off balance swimming followed by tetanus.

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs

This paper reports an extensive analysis of the defect-related localized emission processes occurring in InGaN/GaN-based light-emitting diodes (LEDs) at low reverse- and forward-bias conditions. The analysis is based on combined electrical characterization and spectrally and spatially resolved electroluminescence (EL) measurements. Results of this analysis show that: (i) under reverse bias, LEDs can emit a weak luminescence signal, which is directly proportional to the injected reverse current. Reverse-bias emission is localized in submicrometer-size spots; the intensity of the signal is strongly correlated to the threading dislocation (TD) density, since TDs are preferential paths for leakage current conduction. (ii) Under low forward-bias conditions, the intensity of the EL signal is not uniform over the device area. Spectrally resolved EL analysis of green LEDs identifies the presence of localized spots emitting at 600 nm (i.e., in the yellow spectral region), whose origin is ascribed to localized tunneling occurring between the quantum wells and the barrier layers of the diodes, with subsequent defect-assisted radiative recombination. The role of defects in determining yellow luminescence is confirmed by the high activation energy of the thermal quenching of yellow emission (Ea =0.64&eV). © 2012 IEEE.

Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors

A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of source-drain terminal currents at different gate voltages and temperatures is presented. At low gate voltages, trap-limited conduction prevails for a broad range of temperatures, whereas variable range hopping becomes dominant at lower temperatures. At high gate voltages and for all temperatures, percolation conduction comes into the picture. In all cases, the temperature-dependent mobility model obeys a universal power law as a function of gate voltage. © 2011 IEEE.