929 resultados para Doped barium cerate


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The preparation of Tm3+/Yb3+/Ho3+ co-doped CeO2 prepared by the precipitation method using ammonium hydroxide as a precursor is presented. By X-ray diffraction the materials show the phase-type of fluorite structure and the crystallite sizes were calculated by the Scherrer's equation. No other phase was observed evincing that the rare earth ions were inserted into the fluorite phase as substitutional or interstitial dopants. The microstrain calculated by the Williamson-Hall method do not show significant changes in their values, indicating that the inclusion of rare earths does not causes structural changes in the CeO2 used as a host matrix. All material showed intense upconversion emission at red and green region under excitation with diode laser at 980 nm. The color of emission changes from green to red with increasing excitation power pump. The materials showed suitable photoluminescent properties for applications as a laser source, solar cells, and great emitter at 800 nm. (C) 2014 Elsevier B.V. All rights reserved.

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ESR measurements In pressed pellets of doped Poly(3-Methylthiophene)(P3MT) were performed at 10 K and 50 K after cooling the system slowly from room temperature to 110 K, quenching to 77 K and then to 10 K. ESR line asymmetry (A/B) as a function of microwave power was observed and 9.4 GHz conductivity was obtained from Dyson's theory. The data is discussed in terms of Charge-Density Wave (CDW) depinning. At 50 K the threshold electric field is estimated to be less than 1 V/cm. At 10 K a subtle pinning of the CDW was observed around 15 mW.

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Spin incommensurability (IC) has been recently experimentally discovered in the hole-doped Ni-oxide chain compound Y2-xCaxBaNiO5 [G. Xu et al., Science 289, 419 (2000)]. Here a two orbital model for this material is studied using computational techniques. Spin IC is observed in a wide range of densities and couplings. The phenomenon originates in antiferromagnetic correlations across holes dynamically generated to improve hole movement, as it occurs in the one-dimensional Hubbard model and in recent studies of the two-dimensional extended t-J model. The close proximity of ferromagnetic and phase-separated states in parameter space is also discussed.

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Pechini's method has been successfully used to prepare Li-doped MgNb2O6(MN) at short time and low temperature. It consists in the preparation of metal citrate solution, which is polymerized at 250°C to form a high viscous resin. This resin was burned in a box type furnace at 400°C/2h and ground in a mortar. Successive steps of calcination up to 900°C were used to form a crystalline precursor. SEM, DTA and XRD were used to characterize the powders. MN precursor powders containing from 0.1 to 5.0 mol% of LiNbO3 additive was prepared aiming better dielectric properties and microstructural characteristics of the PMN prepared from columbite route. SEM analysis showed that particles increased by sintering, forming large agglomerates. The surface area is also substantially reduced with the increase in additive amount above 1.0 mol%. In XRD pattern of the precursor material with 5.0 mol% of additive was observed the LiNbO3 phase of trigonal structure. XRD data were used for Rietveld refinement and a decrease in microstrain and pronounced increase in crystallite size with the increase of LiNbO3 were observed. It is in agreement with the particle morphologies observed by SEM analysis.

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We have used the periodic quantum-mechanical method with density functional theory at the B3LYP hybrid functional level in order to study the doping of SnO2 with pentavalent Sb5+. The 72-atom 2x3x2 supercell SnO2 (Sn24O48) was employed in the calculations. For the SnO2:4%Sb , one atom of Sn was replaced by one Sb atom. For the SnO2:8%Sb, two atoms of Sn were replaced by two Sb atoms. The Sb doping leads to an enhancement in the electrical conductivity of this material, because these ions substitute Sn4+ in the SnO2 matrix, leading to an electronic density rise in the conduction band, due to the donor-like behavior of the doping atom. This result shows that the bandgap magnitude depends on the doping concentration, because the energy value found for SnO2:4%Sb was 2.8eV whereas for SnO2:8%Sb it was 2.7eV. It was also verified that the difference between the Fermi level and the bottom of the conduction band is directly related to the doping concentration. - See more at: http://www.eurekaselect.com/117255/article#sthash.Z5ezhCQD.dpuf

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This work reports on the infrared-to-visible CW frequency upconversion from planar waveguides based on Er3+-Yb3+-doped 100-xSiO(2)-xTa(2)O(5) obtained by a sol-gel process and deposited onto a SiO2-Si substrate by dip-coating. Surface morphology and optical parameters of the planar waveguides were analyzed by atomic force microscopy and the m-line technique. The influence of the composition on the electronic properties of the glass-ceramic films was followed by the band gap ranging from 4.35 to 4.51 eV upon modification of the Ta2O5 content. Intense green and red emissions were detected from the upconversion process for all the samples after excitation at 980 nm. The relative intensities of the emission bands around 550 nm and 665 nm, assigned to the H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2) transitions, depended on the tantalum oxide content and the power of the laser source at 980 nm. The upconversion dynamics were investigated as a function of the Ta2O5 content and the number of photons involved in each emission process. Based on the upconversion emission spectra and 1931CIE chromaticity diagram, it is shown that color can be tailored by composition and pump power. The glass ceramic films are attractive materials for application in upconversion lasers and near infrared-to-visible upconverters in solar cells.

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This paper reports the synthesis of Eu-doped hydroxyapatite (HA:Eu) resulting in particles with nanorod diameters from 9 to 26 nm using the microwave hydrothermal method (HTMW). Eu3+ ions were used as a marker in the HA network by basic hydrolysis followed by the HTMW treatment. The crystalline HA:Eu nanorod nature in a short-range order was detected by photoluminescence (PL) measurements from Eu3+ emission into the HA matrix. Thus, was possible to verify that HA crystallization is favored in a short structural order when the HTMW treatment time was increased from 0 to 40 min and that the Eu3+ substitution in the HA lattice is site-selective. (C) 2012 Elsevier B.V. All rights reserved.

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Transition-metal (TM)-doped diluted magnetic oxides (DMOs) have attracted attention from both experimental and theoretical points of view due to their potential use in spintronics towards new nanostructured devices and new technologies. In the present work, we study the magnetic properties of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(V (O))(0.02), where TM = Fe and Co, focusing in particular in the role played by the presence of O vacancies nearby the TM. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a ground state, respectively, with 2 and 1 mu(B)/cell, for Fe and Co. Two metastable states, with 0 and 4 mu(B)/cell were found for Fe, and a single value, 3 mu(B)/cell, for Co. The spin-crossover energies (E (S)) were calculated. The values are E (S) (0/2) = 107 meV and E (S) (4/2) = 25 meV for Fe. For Co, E (S) (3/1) = 36 meV. By creating O vacancies close to the TM site, we show that the metastablity and E (S) change. For iron, a new state appears, and the state with zero magnetic moment disappears. The ground state is 4 mu(B)/cell instead of 2 mu(B)/cell, and the energy E (S) (2/4) is 30 meV. For cobalt, the ground state is then found with 3 mu(B)/cell and the metastable state with 1 mu(B)/cell. The spin-crossover energy E (S) (1/3) is 21 meV. Our results suggest that these materials may be used in devices for spintronic applications that require different magnetization states.

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In this work, the persistent luminescence mechanisms of Tb3+ (in CdSiO3) and Eu2+ (in BaAl2O4) based on solid experimental data are compared. The photoluminescence spectroscopy shows the different nature of the inter- and intraconfigurational transitions for Eu2+ and Tb3+, respectively. The electron is the charge carrier in both mechanisms, implying the presence of electron acceptor defects. The preliminary structural analysis shows a free space in CdSiO3 able to accommodate interstitial oxide ions needed by charge compensation during the initial preparation. The subsequent annealing removes this oxide leaving behind an electron trap. Despite the low band gap energy for CdSiO3, determined with synchrotron radiation UV-VUV excitation spectroscopy of Tb3+, the persistent luminescence from Tb3+ is observed only with UV irradiation. The need of high excitation energy is due to the position of F-7(6) level deep below the bottom of the conduction band, as determined with the 4f(8)-> 4f(7)5d(1) and the ligand-to-metal charge-transfer transitions. Finally, the persistent luminescence mechanisms are constructed and, despite the differences, the mechanisms for Tb3+ and Eu2+ proved to be rather similar. This similarity confirms the solidity of the interpretation of experimental data for the Eu2+ doped persistent luminescence materials and encourages the use of similar models for other persistent luminescence materials. (C) 2012 Optical Society of America