Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation

Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Effect of grape pre-drying and static pomace contact on physicochemical properties and sensory acceptance of Brazilian (Bordo and Isabel) red wines

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Finiteness theorem for topological contact equivalence of map germs

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Evaluation of thermal compatibility between core and veneer dental ceramics using shear bond strength test and contact angle measurement

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Resin Bonding to a Feldspar Ceramic After Different Ceramic Surface Conditioning Methods: Evaluation of Contact Angle, Surface pH, and Microtensile Bond Strength Durability

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Massless DKP field in a Lyra manifold

Massless scalar and vector fields are coupled to the Lyra geometry by means of the Duffin-Kemmer-Petiau (DKP) theory. Using the Schwinger variational principle, the equations of motion, conservation laws and gauge symmetry are implemented. We find that the scalar field couples to the anholonomic part of the torsion tensor, and the gauge symmetry of the electromagnetic field does not break by the coupling with torsion.

Four-fermion contact interactions at one-loop and the new atomic parity violation results.

We investigate the possibility that four-fermion contact interactions give rise to the observed deviation from the Standard Model prediction for the weak charge of cesium, through one-loop contributions. We show that the presence of loops involving the third generation quarks can explain such deviation.

Constraints on four-fermion contact interactions from precise electroweak measurements

We establish constraints on a general four-fermion contact interaction from precise measurements of electroweak parameters. We compute the one-loop contribution for the leptonic Z width, anomalous magnetic, weak-magnetic, electric and weak dipole moments of leptons in order to extract bounds on the energy scale of these effective interactions.

Subtractive renormalization of one-pion-exchange and contact interactions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Curves in homogeneous spaces and their contact with 1-dimensional orbits

Let alpha be a C(infinity) curve in a homogeneous space G/H. For each point x on the curve, we consider the subspace S(k)(alpha) of the Lie algebra G of G consisting of the vectors generating a one parameter subgroup whose orbit through x has contact of order k with alpha. In this paper, we give various important properties of the sequence of subspaces G superset of S(1)(alpha) superset of S(2)(alpha) superset of S(3)(alpha) superset of ... In particular, we give a stabilization property for certain well-behaved curves. We also describe its relationship to the isotropy subgroup with respect to the contact element of order k associated with alpha.

Characterization of micro-bubble size distribution and flow configuration in DAF contact zone by a non-intrusive image analysis system and tracer tests

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Transporter protein genes are differentially expressed in Acidithiobacillus ferrooxidans LR maintained in contact with covellite

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Differential proteomic analysis of Acidithiobacillus ferrooxidans cells maintained in contact with bornite or chalcopyrite: Proteins involved with the early bacterial response

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electromagnetic field in Lyra manifold: a first order approach

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)