Dual self-image technique for beam collimation

We propose an accurate technique for obtaining highly collimated beams, which also allows testing the collimation degree of a beam. It is based on comparing the period of two different self-images produced by a single diffraction grating. In this way, variations in the period of the diffraction grating do not affect to the measuring procedure. Self-images are acquired by two CMOS cameras and their periods are determined by fitting the variogram function of the self-images to a cosine function with polynomial envelopes. This way, loss of accuracy caused by imperfections of the measured self-images is avoided. As usual, collimation is obtained by displacing the collimation element with respect to the source along the optical axis. When the period of both self-images coincides, collimation is achieved. With this method neither a strict control of the period of the diffraction grating nor a transverse displacement, required in other techniques, are necessary. As an example, a LED considering paraxial approximation and point source illumination is collimated resulting a resolution in the divergence of the beam of σ φ = ± μrad.

Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures

First-principles electronic structure methods are used to predict the rate of n-type carrier scattering due to phonons in highly-strained Ge. We show that strains achievable in nanoscale structures, where Ge becomes a direct bandgap semiconductor, cause the phonon-limited mobility to be enhanced by hundreds of times that of unstrained Ge, and over a thousand times that of Si. This makes highly tensile strained Ge a most promising material for the construction of channels in CMOS devices, as well as for Si-based photonic applications. Biaxial (001) strain achieves mobility enhancements of 100 to 1000 with strains over 2%. Low temperature mobility can be increased by even larger factors. Second order terms in the deformation potential of the Gamma valley are found to be important in this mobility enhancement. Although they are modified by shifts in the conduction band valleys, which are caused by carrier quantum confinement, these mobility enhancements persist in strained nanostructures down to sizes of 20 nm.

Method to Improve the Linearity of Active Commutating Mixers Using Dynamic Current Injection

A double balanced (DBM) CMOS mixer providing high linearity is presented in this paper. A cross-coupled pair used in the IF stage of the mixer to dynamically inject current into the to mixer provide a high linearity. The proposed DBM was fabricated using a standard 130-nm CMOS process and was tested on-wafer. The double balanced mixer delivers 10 dB conversion gain, 9.5 dBm IIP3, and input P1dB of -2.4 dBm. RF bandwidth of the proposed mixer is 6 GHz, covering 0.5 GHz to 6.5 GHz with IF bandwidth of 300 MHz. RF to IF and LO to IF isolation are also better than 59 dB in the whole frequency band. The circuit uses an area of 0.015 mm2 excluding bonding pads and draw 4.5mW from a 1.2V supply.

A Decade-Bandwidth Low-Noise Mixer RFIC with a Distortion-Canceling Output Amplifier

This paper presents a 1-10 GHz low-noise downconvert mixer RFIC suitable for wideband receivers. A switched transconductor mixing core is adopted to reduce noise at high frequencies. By adding a series inductor to the RF transconductor, a flat 4-5 dB noise figure (NF) and a high gain of 26.5 dB can be achieved over a broad bandwidth out to 10 GHz. A CMOS output amplifier is also integrated on-chip, employing derivative superposition (DS) for high linearity and an OIP3 of 16.5 dBm. The circuit consumes less than 20 mW of dc power and occupies an active chip area of less than 0.2 mm2.

Variable 360° Vector-Sum Phase Shifter With Coarse and Fine Vector Scaling

A CMOS vector-sum phase shifter covering the full 360° range is presented in this paper. Broadband operational transconductance amplifiers with variable transconductance provide coarse scaling of the quadrature vector amplitudes. Fine scaling of the amplitudes is accomplished using a passive resistive network. Expressions are derived to predict the maximum bit resolution of the phase shifter from the scaling factor of the coarse and fine vector-scaling stages. The phase shifter was designed and fabricated using the standard 130-nm CMOS process and was tested on-wafer over the frequency range of 4.9–5.9 GHz. The phase shifter delivers root mean square (rms) phase and amplitude errors of 1.25° and 0.7 dB, respectively, at the midband frequency of 5.4 GHz. The input and output return losses are both below 17 dB over the band, and the insertion loss is better than 4 dB over the band. The circuit uses an area of 0.303 mm2 excluding bonding pads and draws 28 mW from a 1.2 V supply.

A realist synthesis of educational interventions to improve nutrition care competencies and delivery by doctors and other healthcare professionals

Objective: To determine what, how, for whom, why, and in what circumstances educational interventions to improve the delivery of nutrition care by doctors and other healthcare professionals work?

Design: Realist synthesis following a published protocol and reported following Realist and Meta-narrative Evidence Synthesis: Evolving Standards (RAMESES) guidelines. A multidisciplinary team searched Medline, CINAHL, ERIC, EMBASE, PsyINFO, Sociological Abstracts, Web of Science, Google Scholar, and Science Direct for published and unpublished (grey) literature. The team identified studies with varied designs; appraised their ability to answer the review question; identified relationships between contexts, mechanisms, and outcomes (CMOs); and entered them into a spreadsheet configured for the purpose. The final synthesis identified commonalities across CMO configurations.

Results: Over half of the 46 studies from which we extracted data originated from the US. Interventions that improved the delivery of nutrition care improved skills and attitudes rather than just knowledge; provided opportunities for superiors to model nutrition care; removed barriers to nutrition care in health systems; provided participants with local, practically relevant tools and messages; and incorporated non-traditional, innovative teaching strategies. Operating in contexts where student and qualified healthcare professionals provided nutrition care in both developed and developing countries, these interventions yielded health outcomes by triggering a range of mechanisms, which included: feeling competent; feeling confident and comfortable; having greater self-efficacy; being less inhibited by barriers in healthcare systems; and feeling that nutrition care was accepted and recognised.

Conclusion: These findings show how important it is to move education for nutrition care beyond the simple acquisition of knowledge. They show how educational interventions embedded within systems of healthcare can improve patients’ health by helping health students and professionals to appreciate the importance of delivering nutrition care and feel competent to deliver it.

RELATIONAL MEMORY IN EARLY CHILDHOOD: DOES UNITIZATION HELP?

Young children often experience relational memory failures, which are thought to be due to underdeveloped recollection processes. Manipulations with adults, however, have suggested that relational memory tasks can be accomplished with familiarity, a processes that is fully developed during early childhood. The goal of the present study was to determine if relational memory performance could be improved in early childhood by teaching children a memory strategy (i.e., unitization) shown to increase familiarity in adults. Six- and 8-year old children were taught to use visualization strategies that either unitized or did not unitize pictures and colored borders. Analysis revealed inconclusive results regarding differences in familiarity between the two conditions, suggesting that the unitization memory strategy did not improve the contribution of familiarity as it has been shown to do in adults. Based on these findings, it cannot be concluded that unitization strategies increase the contribution of familiarity in childhood.

O marketing em um hospital universitário na relação com o trabalho da enfermagem: um estudo de caso

No setor hospitalar, o marketing compõe um grupo interdependente de serviços e tem como objetivo principal aproximar clientes - externos, internos e corpo gestor -, através de estratégias específicas que promovem satisfação e qualidade. Esta organização possui uma larga diversidade de profissionais da saúde e o marketing, neste sentido, auxilia no processamento de seus serviços de forma a lapidá-los sob a ótica do cliente, buscando efetividade e produtividade. Neste cenário encontra-se o enfermeiro, cujo trabalho é composto pelas dimensões cuidar, gerenciar, educar/pesquisar, que se entrelaçam e caracterizam o serviço deste profissional. No entanto, costumeiramente, a enfermagem não declara o marketing como uma ferramenta estratégica ao seu processo de trabalho – fato verificável na exploração de publicações científicas -, e, paralelamente, depara-se com empecilhos na execução de seu trabalho que podem comprometer a sua excelência. Assim, este estudo busca analisar a relação do marketing com o trabalho do enfermeiro nas dimensões cuidar, gerenciar, ensinar/pesquisar. Para sua efetivação, optou-se pelo referencial metodológico Estudo de Caso, onde o fenômeno é verificado como ocorre em seu cenário real. Assim, a coleta, caracterizada por pesquisador e unidade únicos, ocorreu em um hospital universitário, geral e público no sul do país que declara publica e virtualmente o marketing institucional. Como fontes de evidência, foram utilizadas: entrevista focada com quatro sujeitos de áreas estratégicas para esta pesquisa; análise de documentação criada pela assessoria de marketing e observação direta. O tratamento e a análise dos dados ocorreram por meio da Análise Temática, que possibilitou a exposição dos resultados através de dois artigos: “A relação do marketing com o processo de trabalho do enfermeiro na dimensão cuidar” e “A relação do marketing com o processo de trabalho do enfermeiro nas dimensões gerenciar e educar/pesquisar”. Os resultados evidenciaram que o marketing no cuidar - auxilia a efetividade do cuidado através de novas estratégias de comunicação com o usuário, produz materiais elucidativos, lúdicos para sua continuação e manutenção e o divulga no meio intra e extra-hospitalar; no gerenciar - auxilia a o enfermeiro a ter um método mais inovador e criativo, a focar no cliente e no bom relacionamento interpessoal com a equipe; no educar/pesquisar - cria canais de comunicação interna e campanhas únicas que, além de auxiliar na realização da educação permanente e na atualização de enfermeiros, propicia meios para transmitir novos achados científicos à prática da enfermagem hospitalar. Através deste estudo, percebeu-se que ações de marketing podem contribuir para a efetividade do trabalho do enfermeiro em suas facetas dimensionais, aproximando este agente de saúde do usuário ao qual seu serviço é destinado e da gestão da organização, propiciando a este profissional maior visibilidade e valorização no espaço hospitalar e social.

High-resolution image reconstruction from multiple low-resolution images.

In this paper, we demonstrate a digital signal processing (DSP) algorithm for improving spatial resolution of images captured by CMOS cameras. The basic approach is to reconstruct a high resolution (HR) image from a shift-related low resolution (LR) image sequence. The aliasing relationship of Fourier transforms between discrete and continuous images in the frequency domain is used for mapping LR images to a HR image. The method of projection onto convex sets (POCS) is applied to trace the best estimate of pixel matching from the LR images to the reconstructed HR image. Computer simulations and preliminary experimental results have shown that the algorithm works effectively on the application of post-image-captured processing for CMOS cameras. It can also be applied to HR digital image reconstruction, where shift information of the LR image sequence is known.

ENABLING HARDWARE TECHNOLOGIES FOR AUTONOMY IN TINY ROBOTS: CONTROL, INTEGRATION, ACTUATION

The last two decades have seen many exciting examples of tiny robots from a few cm3 to less than one cm3. Although individually limited, a large group of these robots has the potential to work cooperatively and accomplish complex tasks. Two examples from nature that exhibit this type of cooperation are ant and bee colonies. They have the potential to assist in applications like search and rescue, military scouting, infrastructure and equipment monitoring, nano-manufacture, and possibly medicine. Most of these applications require the high level of autonomy that has been demonstrated by large robotic platforms, such as the iRobot and Honda ASIMO. However, when robot size shrinks down, current approaches to achieve the necessary functions are no longer valid. This work focused on challenges associated with the electronics and fabrication. We addressed three major technical hurdles inherent to current approaches: 1) difficulty of compact integration; 2) need for real-time and power-efficient computations; 3) unavailability of commercial tiny actuators and motion mechanisms. The aim of this work was to provide enabling hardware technologies to achieve autonomy in tiny robots. We proposed a decentralized application-specific integrated circuit (ASIC) where each component is responsible for its own operation and autonomy to the greatest extent possible. The ASIC consists of electronics modules for the fundamental functions required to fulfill the desired autonomy: actuation, control, power supply, and sensing. The actuators and mechanisms could potentially be post-fabricated on the ASIC directly. This design makes for a modular architecture. The following components were shown to work in physical implementations or simulations: 1) a tunable motion controller for ultralow frequency actuation; 2) a nonvolatile memory and programming circuit to achieve automatic and one-time programming; 3) a high-voltage circuit with the highest reported breakdown voltage in standard 0.5 μm CMOS; 4) thermal actuators fabricated using CMOS compatible process; 5) a low-power mixed-signal computational architecture for robotic dynamics simulator; 6) a frequency-boost technique to achieve low jitter in ring oscillators. These contributions will be generally enabling for other systems with strict size and power constraints such as wireless sensor nodes.

Low-power high-performance SAR ADC design with digital calibration techniques

This dissertation presents the design of three high-performance successive-approximation-register (SAR) analog-to-digital converters (ADCs) using distinct digital background calibration techniques under the framework of a generalized code-domain linear equalizer. These digital calibration techniques effectively and efficiently remove the static mismatch errors in the analog-to-digital (A/D) conversion. They enable aggressive scaling of the capacitive digital-to-analog converter (DAC), which also serves as sampling capacitor, to the kT/C limit. As a result, outstanding conversion linearity, high signal-to-noise ratio (SNR), high conversion speed, robustness, superb energy efficiency, and minimal chip-area are accomplished simultaneously. The first design is a 12-bit 22.5/45-MS/s SAR ADC in 0.13-μm CMOS process. It employs a perturbation-based calibration based on the superposition property of linear systems to digitally correct the capacitor mismatch error in the weighted DAC. With 3.0-mW power dissipation at a 1.2-V power supply and a 22.5-MS/s sample rate, it achieves a 71.1-dB signal-to-noise-plus-distortion ratio (SNDR), and a 94.6-dB spurious free dynamic range (SFDR). At Nyquist frequency, the conversion figure of merit (FoM) is 50.8 fJ/conversion step, the best FoM up to date (2010) for 12-bit ADCs. The SAR ADC core occupies 0.06 mm2, while the estimated area the calibration circuits is 0.03 mm2. The second proposed digital calibration technique is a bit-wise-correlation-based digital calibration. It utilizes the statistical independence of an injected pseudo-random signal and the input signal to correct the DAC mismatch in SAR ADCs. This idea is experimentally verified in a 12-bit 37-MS/s SAR ADC fabricated in 65-nm CMOS implemented by Pingli Huang. This prototype chip achieves a 70.23-dB peak SNDR and an 81.02-dB peak SFDR, while occupying 0.12-mm2 silicon area and dissipating 9.14 mW from a 1.2-V supply with the synthesized digital calibration circuits included. The third work is an 8-bit, 600-MS/s, 10-way time-interleaved SAR ADC array fabricated in 0.13-μm CMOS process. This work employs an adaptive digital equalization approach to calibrate both intra-channel nonlinearities and inter-channel mismatch errors. The prototype chip achieves 47.4-dB SNDR, 63.6-dB SFDR, less than 0.30-LSB differential nonlinearity (DNL), and less than 0.23-LSB integral nonlinearity (INL). The ADC array occupies an active area of 1.35 mm2 and dissipates 30.3 mW, including synthesized digital calibration circuits and an on-chip dual-loop delay-locked loop (DLL) for clock generation and synchronization.

An 8x8 thermopile based uncooled infrared sensor

International audience

Investigation of the hazards of substrate current injection: transient external latchup and substrate noise coupling

Substrate current injection is the origin of external latchup and substrate noise coupling. The trigger current for external latchup depends on the duration of the trigger event. A physics-based model is provided to model the effects of aggressor to victim spacing and orientation on transient triggering of external latchup. The latchup susceptibility of standard cell based designs is also investigated. Guard rings are used to reduce latchup susceptibility and to reduce the substrate noise coupled to sensitive analog circuits. In this work, the effectiveness of different guard ring topologies for the reduction of substrate noise coupling is also investigated.

Holistic Design In High-Speed Optical Interconnects

Integrated circuit scaling has enabled a huge growth in processing capability, which necessitates a corresponding increase in inter-chip communication bandwidth. As bandwidth requirements for chip-to-chip interconnection scale, deficiencies of electrical channels become more apparent. Optical links present a viable alternative due to their low frequency-dependent loss and higher bandwidth density in the form of wavelength division multiplexing. As integrated photonics and bonding technologies are maturing, commercialization of hybrid-integrated optical links are becoming a reality. Increasing silicon integration leads to better performance in optical links but necessitates a corresponding co-design strategy in both electronics and photonics. In this light, holistic design of high-speed optical links with an in-depth understanding of photonics and state-of-the-art electronics brings their performance to unprecedented levels. This thesis presents developments in high-speed optical links by co-designing and co-integrating the primary elements of an optical link: receiver, transmitter, and clocking.

In the first part of this thesis a 3D-integrated CMOS/Silicon-photonic receiver will be presented. The electronic chip features a novel design that employs a low-bandwidth TIA front-end, double-sampling and equalization through dynamic offset modulation. Measured results show -14.9dBm of sensitivity and energy efficiency of 170fJ/b at 25Gb/s. The same receiver front-end is also used to implement source-synchronous 4-channel WDM-based parallel optical receiver. Quadrature ILO-based clocking is employed for synchronization and a novel frequency-tracking method that exploits the dynamics of IL in a quadrature ring oscillator to increase the effective locking range. An adaptive body-biasing circuit is designed to maintain the per-bit-energy consumption constant across wide data-rates. The prototype measurements indicate a record-low power consumption of 153fJ/b at 32Gb/s. The receiver sensitivity is measured to be -8.8dBm at 32Gb/s.

Next, on the optical transmitter side, three new techniques will be presented. First one is a differential ring modulator that breaks the optical bandwidth/quality factor trade-off known to limit the speed of high-Q ring modulators. This structure maintains a constant energy in the ring to avoid pattern-dependent power droop. As a first proof of concept, a prototype has been fabricated and measured up to 10Gb/s. The second technique is thermal stabilization of micro-ring resonator modulators through direct measurement of temperature using a monolithic PTAT temperature sensor. The measured temperature is used in a feedback loop to adjust the thermal tuner of the ring. A prototype is fabricated and a closed-loop feedback system is demonstrated to operate at 20Gb/s in the presence of temperature fluctuations. The third technique is a switched-capacitor based pre-emphasis technique designed to extend the inherently low bandwidth of carrier injection micro-ring modulators. A measured prototype of the optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit based on the monolithic PTAT sensor consumes 0.29mW.

Lastly, a first-order frequency synthesizer that is suitable for high-speed on-chip clock generation will be discussed. The proposed design features an architecture combining an LC quadrature VCO, two sample-and-holds, a PI, digital coarse-tuning, and rotational frequency detection for fine-tuning. In addition to an electrical reference clock, as an extra feature, the prototype chip is capable of receiving a low jitter optical reference clock generated by a high-repetition-rate mode-locked laser. The output clock at 8GHz has an integrated RMS jitter of 490fs, peak-to-peak periodic jitter of 2.06ps, and total RMS jitter of 680fs. The reference spurs are measured to be –64.3dB below the carrier frequency. At 8GHz the system consumes 2.49mW from a 1V supply.

Materials design for ambipolar devices: tuning orbital energetics in oligothiophene-naphthalimides semiconductors

Ambipolar organic field-effect transistors (OFETs), which can efficiently transport both holes and electrons, using a single type of electrode, are currently of great interest due to their possible applications in complementary metal oxide semiconductor (CMOS)-like circuits, sensors, and in light-emitting transistors. Several theoretical and experimental studies have argued that most organic semiconductors should be able to transport both types of carrier, although typically unipolar behavior is observed. One factor that can compromise ambipolar transport in organic semiconductors is poor solid state overlap between the HOMO (p-type) or LUMO (n-type) orbitals of neighboring molecules in the semiconductor thin film. In the search of low-bandgap ambipolar materials, where the absence of skeletal distortions allows closer intermolecular π-π stacking and enhanced intramolecular π-conjugation, a new family of oligothiophene-naphthalimide assemblies have been synthesized and characterized, in which both donor and acceptor moieties are directly conjugated through rigid linkers. In previous works we found that oligothiophene-napthalimide assemblies connected through amidine linkers (NDI derivates) exhibit skeletal distortions (50-60º) arising from steric hindrance between the carbonyl group of the arylene core and the sulphur atom of the neighbored thiophene ring (see Figure 1). In the present work we report novel oligo- and polythiophene–naphthalimide analogues NAI-3T, NAI-5T and poly-NAI-8C-3T, in which the connections of the amidine linkage have been inverted in order to prevent steric interactions. Thus, the nitrogen atoms are directly connected to the naphthalene moiety in NAI derivatives while they were attached directly to the thiophene moiety in the previously investigated NDI-3T and NDI-5T. In Figure 1 is depicted the calculated molecular structure of NAI-3T together with that of NDI-3T showing how the steric interactions are not present in the novel NAI derivative. The planar skeletons in these new family induce higher degree of crystallinity and the carrier charge transport can be switched from n-type to ambipolar behaviour. The highest FET performance is achieved for vapor-deposited films of NAI-3T with mobilities of 1.95x10-4cm2V-1s-1 and 2.00x10-4cm2V-1s-1 for electrons and holes, respectively. Finally, these planar semiconductors are compared with their NDI derivates analogues, which exhibit only n-type mobility, in order to understand the origin of the ambipolarity in this new series of molecular semiconductors.