1000 resultados para Air pilots.


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An organic semiconductor that can be mass produced is synthesized by end-capping quaterthiophene with naphthyl units (NaT4). An organic thin-film transistor (OTFT, see figure) has been fabricated using this organic semiconductor, and exhibits stability under ambient conditions with a mobility of up to 0.40 cm(2) V-1 s(-1).

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Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

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The device performances of copper phthalocyanine (CuPc)-based organic thin-film transistors (OTFTs) in main components of air were studied. We found that the device stored in O-2 humidified by water exhibited the changes of electric characteristics including positive-shifted threshold voltage and lower I-on/I-off but unchanged mobility, which was similar to the device exposed to room air. These changes are attributed to O-2 doping to copper phthalocyanine thin film assisted by water. Furthermore, a cross-linked polyvinyl alcohol film was used as encapsulation layer to prevent the permeation of O-2 and water, which resulted in excellent stability even when devices were placed in air for over a year. Therefore, current studies will push the development of OTFTs for practical applications.

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The reduction of Eu3+ to Eu2+ in air has been observed in a silicate matrix for the first time in BaMgSiO4:Eu prepared by high-temperature solid-state reaction. Emission and excitation spectra were employed to detect the presence of Eu2+ ions in the compound and this reduction was explained by a charge compensation model proposed previously. In BaMgSiO4 : Eu2+, Eu2+ ions occupy three different lattice sites by substitution for Ba2+ ions. Eu2+ ions on Ba(1) and Ba(2) sites gave emissions at about 500 nm while that on Ba(3) site showed an emission band at 398 nm. All the emissions of Eu2+ ions in BaMgSiO4 : Eu2+ were not quenched at room temperature.

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Compounds of Sr4Al14O15: Eu were prepared in air atmosphere by high temperature solid state reaction. The reduction of Eu3+--> Eu2+ was firstly observed in the aluminate phosphor of Sr4Al14O25: Eu synthesized in air condition. This made aluminate a new family and Sr4Al14O25 a new member of compounds in which Eu3+ ion could be reduced to Eu2+ form when fired in air atmosphere. The reduction of Eu3+ --> Eu2+ in Sr4Al14O25: Eu was explained by means of a charge compensation model. Experiments based on the model were designed and carried out, and the results supported this model.

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The coordination numbers for the samarium atoms and the Sm-O bond distances in SrB4O7:Sm and SrB6O10:Sm prepared in air were determined by means of Sm-L-3 edge EXAFS. The coordination. was found to be nine-folded for both these hosts and the bond distance was 2.40-2.42 Angstrom in SrB4O7:Sm and 2.42-2.44 Angstrom in SrB6O10:Sm. For SrB4O7:Sm the coordination number is coincident with that of the strontium. atoms suggesting the substitution of the samarium atoms at the strontium sites. The coordination number of the strontium atoms in SrB6O10 was also suggested to be nine assuming the same type of substitution. The valences of samarium were determined from the luminescent spectra. Both divalent and trivalent ions were present in both SrB4O7:Sm and SrB6O10:Sm, while the fraction of Sm2+ was higher in the former than in the latter. This difference has been assigned to the difference in rigidity between the B-O networks in these structures.

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The high-resolution luminescent spectrum of divalent samarium excited by 355 nm UV light at 77 K, the VUV excitation spectra, the VUV excited emission spectra and EXAFS at Sm-L-3 edge were reported for samarium doped strontium borophosphate, SrBPO5:Sm prepared by solid state reaction in air at high temperature. The high-resolution luminescent spectrum showed that the divalent samarium ions occupied the C-2upsilon lattice sites. The VUV excitation spectra indicated that the sample exhibited absorption bands with the maxima at 129 and 148 nm, respectively. The performance of EXAFS at Sm-L3 absorption edge suggested that the samarium ions were nine-coordinated and the mean distances of bond Sm-O were 2.38 Angstrom.

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When alkaline earth ions in borates, phosphates or borophosphates [SrB4O7, SrB6O10, BaB8O13, MBPO5 (M=Ca,Sr)] are substituted partially and aliovalently by trivalent rare earth ions such as Sm3+, Eu3+, these rare earth ions can be reduced to divalent state by the produced negative charge vacancy V-M". The matrices must have appropriate structure containing a rigid three-dimensional network of tetragonal AO(4) groups (A=B,P). These groups can surround and isolate the produced divalent RE2+ ions from the reaction with oxygen. Therefore, this reduction reaction can be carried out even in air at high temperature. The produced divalent rare earth ions can be detected by luminescence and XANES methods and their spectroscopic properties are discussed.

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VUV-UV and Eu-L-3 edge XANES spectra were measured for europium-doped strontium tetraborate prepared by solid state reaction at high temperature in air. The VUV-UV spectra show that the host absorption band of (SrBO7)-O-4 appears below 170 nm. The charge transfer band of Eu3+ doped in SrB4O7 is peaked at 272 nm. The 4f-5d transitions of Eu2+ consist of a band peaked at 310 nm with a shoulder at 280 nm and also include the bands peaked at 238 (weak) and 203 (strong) nm. The result of XANES spectrum at Eu-L3 edge of the synthesized sample indicates that Eu3+ and Eu2+ coexist in SrB4O7:Eu prepared in air, which is consistent with the results of the VUV-UV spectra.

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The local structure and the valences of europium in SrBPO5:Eu prepared in air were checked by means of XAFS at Eu-L-3 edge. From the EXAFS results, it was discovered that the doped europium atoms were nine-coordinated by oxygen atoms and the distances of bond Eu-O were 2.42 Angstrom in the host. From the XANES data, it was found that the divalent and trivalent europium coexisted in the matrix. The emission spectra excited by VUV or UV exhibited a prominent broad band due to the 4f(6)5d-4f(7) transition of Eu2+ ions, which indicated that the trivalent europium ions were reduced in air in the matrix at high temperature by the defects [V-Sr]" formed by aliovalent substitution between Sr2+ and Eu3+ ions. The VUV excitation spectra in 100-200 nm range showed that the matrix had absorption bands with the maxima at about 130 and 150 nm, respectively.

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XAFS (EXAFS and XANES) at Eu-L-3 edge were used to determine the local structure and the valences of europium in CaBPO5:Eu prepared in air. The results of EXAFS showed that the doped europium atoms were nine-coordinated by oxygen atoms and the distances of bond Eu-O were 2.39 Angstrom in the host lattice. XANES at Eu-L-3 edge exhibited that Eu2+ and Eu3+ coexisted in the matrix. The luminescent spectrum of the material excited by VUV at 147 nm presented a similar spectrum with that excited by f-f transition of Eu2+ at 396 nm and f-d transition of Eu2+ at 312 nm. The broad emission band due to both 4f(6)5d - 4f(7) transition of EU2+ and f - f transition of Eu3+ could be observed in emission spectra, which indicated that the trivalent europium ions were reduced in air in the matrix at high temperature by the defects [V-Cn]" formed by aliovalent substitution between Ca2+ and Eu3+ ions. The UV excitation spectrum showed the typical f-f transition of Eu3+ and f-d transition of Eu2+. The bands with the maxima at about 113 and 158 nm in VUV excitation spectrum were assigned to originate from the absorption of the host lattice.