土壤中痕量六溴环十二烷的超高效液相色谱/质谱联用分析

报道了土壤样品中痕量六溴环十二烷(HBCDS)的超高效液相气谱/质谱联用分析方法(UPLC/MS)。结果表明,该方法在9 min内即可完成α-HBCD、β-HBCD和γ-HBCD3种同分异构体的分离,回收率为79.3%~109.9%,在2.5~150 ng/mL范围内具有较好的线性,R2为0.991~0.998;α-HBCD、β-HBCD、γ-HBCD的检出限分别为20 pg、45 pg和15 pg。

复合垂直流人工湿地中基质生物膜的特性

从基质生物膜量、生物膜厚度和脱氢酶活性等方面研究了以复合垂直流人工湿地中基质颗粒作为附着生长载体的生物膜的特性。结果表明,复合垂直流人工湿地中,基质生物膜的形成时间为40~60 d。进水水质不同,基质生物膜的形成时间有差异,进水中相对高的营养水平有利于基质生物膜的积累,60 d内形成的稳定生物膜量相差1.59倍;生物膜活性也较大,平均相差1.5倍。不同发育程度的生物膜表现出的活性不同,最佳活性厚度为150 um。人工湿地中不同层次基质生物膜厚度差异显著,最表层0~5 cm层次基质生物膜厚度2~3倍于10

蓝藻Anabaena sp.PCC7120 羧体碳酸酐酶的鉴定

在丝状蓝藻Anabaena sp.PCC7120细胞粗提液的碳酸酐酶(CA)分析中,发现了两种形式的CA活性.高CO_2下生长的细胞,在35μmol/L EZ(Ethoxyzolamide,碳酸酐酶的抑制剂)存在的情况下,CA总活性的85％左右被抑制,其半抑制浓度I_(50)为7.4μmol/L;随着EZ浓度的继续增加,CA活性在EZ浓度达到约150μmol/L处出现了第二个抑制峰,在250μmol/L处抑制程度达到最大,使CA总活性的15％被抑制,其半抑制浓度I_(50)为190μmol/L。在空气条件

鳜类系统发育的研究及若干种类的有效性探讨(英文)

作为重要的淡水经济鱼类、东亚的特有类群和低等鲈类的特殊成分,鳜类在研究和应用上具有极重要的价值,并有大量学者对之进行了多方面的研究。从鳜类中的第一个种被描述起,到现在已有150多年的时间,但是有关鳜类的种类有效性,系统分类,系统位置,与化石的关系等问题都存在疑问,特别是系统发育问题没有人研究。经过对国内外大量鳜类现生种和化石种的标本进行外部形态观察和骨骼学研究,本文运用分支系统学的原理,以花鲈为外类群,对鳜类的系统发育问题进行了研究,并根据系统发育的研究结果提出系统分类的观点。研究表明鳜类是一个单系群,以

Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps

A critical element for the successful growth of GaN device layers on Si is accurate control of the AlGaN buffer layers used to manage strain. Here we present a method for measuring the composition of the AlGaN buffer layers in device structures which makes use of a one-dimensional x-ray detector to provide efficient measurement of a reciprocal space map which covers the full compositional range from AlN to GaN. Combining this with a suitable x-ray reflection with low strain sensitivity it is possible to accurately determine the Al fraction of the buffer layers independent of their relaxation state. © 2013 IOP Publishing Ltd.

Relationships among the contents of total phenolics, soluble carbohydrate, and free amino acids of 15 aquatic macrophytes

In order to examine how carbon and nitrogen status of a macrophyte may affect its total phenolics (TP) production, the contents of free amino acids (FAA), soluble carbohydrate (SC) and TP were examined in leaves of seven submersed, four floating-leaved, and four emergent macrophytes. The floating-leaved and emergent macrophytes had much higher contents of SC and TP than the submersed macrophytes. The contents of FAA were not significantly different among the submersed, floating-leaved, and emergent macrophytes. Correlations among the contents of FAA, SC, and TP indicated that the production of TP was more dependent on the SC content than on the FAA content.

Identification of a gene, ccr-1 (sll1242), required for chill-light tolerance and growth at 15 degrees C in Synechocystis sp PCC 6803

Synechocystis sp. PCC 6803 exposed to chill (5 degrees C)-light (100 mu mol photons m(-2) s(-1)) stress loses its ability to reinitiate growth. From a random insertion mutant library of Synechocystis sp. PCC 6803, a sll1242 mutant showing increased sensitivity to chill plus light was isolated. Mutant reconstruction and complementation with the wild-type gene confirmed the role of sll1242 in maintaining chill-light tolerance. At 15 degrees C, the autotrophic and mixotrophic growth of the mutant were both inhibited, paralleled by decreased photosynthetic activity. The expression of sll1242 was upregulated in Synechocystis sp. PCC 6803 after transfer from 30 to 15 degrees C at a photosynthetic photon flux density of 30 mu mol photons m(-2) S-1. sll1242, named ccr (cyanobacterial cold resistance gene)- 1, may be required for cold acclimation of cyanobacteria in light.

Food consumption and growth of two piscivorous fishes, the mandarin fish and the Chinese snakehead

Rates of maximum food consumption and growth were determined for immature mandarin fish Siniperca chuatsi (47.2-540.2 g) and Chinese snakehead Channa argus (45.0-546.2 g) at 10, 15, 20, 25, 30 and 35 degrees C. The relationship between maximum rate of food consumption (C-max), body weight (W) and temperature (T) was described by the multiple regression equations: lnC(max) = -4.880 + 0.597 lnW+0.284T - 0.0048T(2) for the mandarin fish, and lnC(max)= -6.718 + 0.522 lnW+0.440T-0.0077T(2) for the Chinese snakehead. The optimum temperature for consumption was 29.6 degrees C for the mandarin fish and 28.6 degrees C for the Chinese snakehead. The relationship between growth rate (G), body weight and temperature was ln(G+0.25)= - 0.439 - 0.500 lnW+0.270T - 0.0046T(2) for the mandarin fish, and ln(G+0.25)= - 6.150+ (0.175 - 0.026T) lnW+0.571T - 0.0078T(2) for the Chinese snakehead. The weight exponent in the growth-weight relationship was -0.83 for the mandarin fish, but decreased with increasing temperature for the Chinese snakehead. The optimum temperature for growth was 29.3 degrees C for the mandarin fish, but tended to decrease with increasing weight for the Chinese snakehead, being 30.3 degrees C for a 45-g fish, and 26.1 degrees C for a 550-g fish. (C) 1998 The Fisheries Society of the British Isles.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD

The design and basic characteristics of a strained InGaAsP-InP multiple-quantum-well (MQW) DFB laser monolithically integrated with an electroabsorption modulator (EAM) by ultra-low-pressure (22 mbar) selective-area-growth (SAG) MOCVD are presented. A fundamental study of the controllability and the applicability of band-gap energy by using the SAG, method is performed. A large band-gap photoluminescence wavelength shift of 88 mn. was obtained with a small mask width variation (0-30 mu m). The technique is then applied to fabricate a high performance strained MQW EAM integrated with a DFB laser. The threshold current of 26 mA at CW operation of the device with DFB laser length of 300 mu m and EAM length of 150 mu m has been realized at a modulator bias of 0 V. The devices also exhibit 15 dB on/off ratio at an applied bias voltage of 5 V.

Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density

In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, nitrogen was implanted into SIMOX BOX (buried oxide). However, it has been found by the C-V technique employed in this work that there is an obvious increase of the fixed positive charge density in the nitrogen-implanted BOX with a 150 out thickness and 4 x 10(15) cm(-2) nitrogen implantation dose, compared with that unimplanted with nitrogen. On the other hand, for the BOX layers with a 375 nm thickness and implanted with 2 x 10(15) and 3 x 10(15) cm(-2) nitrogen doses respectively, the increase of the fixed positive charge density induced by implanted nitrogen has not been observed. The post-implantation annealing conditions are identical for all the nitrogen-implanted samples. The increase in fixed positive charge density in the nitrogen-implanted 150 nm BOX is ascribed to the accumulation of implanted nitrogen near the BOX/Si interface due to the post-implantation annealing process according to SIMS results. In addition, it has also been found that the fixed positive charge density in initial BOX is very small. This means SIMOX BOX has a much lower oxide charge density than thermal SiO2 which contains a lot of oxide charges in most cases.

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW. (c) 2006 Society of Photo-Optical Instrumentation Engineers.