Guided propagation of surface acoustic waves and piezoelectric field enhancement in ZnO/GaAs systems

The characteristics and dispersion of the distinct surface acoustic waves (SAWs) propagating in ZnO/GaAs heterostructures have been studied experimentally and theoretically. Besides the Rayleigh mode, strong Sezawa modes, which propagate confined in the overlayer, arise due to the smaller sound velocity in ZnO than in the substrate. The design parameters of the structure providing the strongest piezoelectric field at a given depth within the layered system for the different modes have been determined. The piezoelectric field of the Rayleigh mode is shown to be more than 10 times stronger at the interface region of the tailored ZnO/GaAs structure than at the surface region of the bulk GaAs, whereas the same comparison for the first Sezawa mode yields a factor of 2. This enhancement, together with the capacity of selecting waves with different piezoelectric and strain field depth profiles, will facilitate the development of SAW-modulated optoelectronic applications in GaAs-based systems. © 2011 American Institute of Physics.

Polymer-based board-level optical interconnects

This paper provides an overview of the rationale behind the significant interest in polymer-based on-board optical links together with a brief review of recently reported work addressing certain challenges in this field. Polymer-based optical links have garnered considerable research attention due to their important functional attributes and compelling cost-benefit advantages in on-board optoelectronic systems as they can be cost-effectively integrated on conventional printed circuit boards. To date, significant work on the polymer materials, their fabrication process and their integration on standard board substrates have enabled the demonstration of numerous high-speed on-board optical links. However, to be deployed in real-world systems, these optoelectronic printed circuit boards (OE PCBs) must also be cost-effective. Here, recent advances in the integration process focusing on simple direct end-fire coupling schemes and the use of low-cost FR4 PCB substrates are presented. Performance of two proof-of-principle 10 Gb/s systems based on this integration method are summarised while work in realising more complex yet compact planar optical components is outlined. © 2011 IEEE.

Cost-effective 10 Gb/s polymer-based chip-to-chip optical interconnect

Board-level optical links are an attractive alternative to their electrical counterparts as they provide higher bandwidth and lower power consumption at high data rates. However, on-board optical technology has to be cost-effective to be commercially deployed. This study presents a chip-to-chip optical interconnect formed on an optoelectronic printed circuit board that uses a simple optical coupling scheme, cost-effective materials and is compatible with well-established manufacturing processes common to the electronics industry. Details of the link architecture, modelling studies of the link's frequency response, characterisation of optical coupling efficiencies and dynamic performance studies of this proof-of-concept chip-to-chip optical interconnect are reported. The fully assembled link exhibits a -3 dBe bandwidth of 9 GHz and -3 dBo tolerances to transverse component misalignments of ±25 and ±37 μm at the input and output waveguide interfaces, respectively. The link has a total insertion loss of 6 dBo and achieves error-free transmission at a 10 Gb/s data rate with a power margin of 11.6 dBo for a bit-error-rate of 10 -12. The proposed architecture demonstrates an integration approach for high-speed board-level chip-to-chip optical links that emphasises component simplicity and manufacturability crucial to the migration of such technology into real-world commercial systems. © 2012 The Institution of Engineering and Technology.

Graphene field-effect transistors as room-temperature terahertz detectors

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples. © 2012 Macmillan Publishers Limited. All rights reserved.

Superconducting magnetic bearings for energy storage flywheels

We are investigating the use of flywheels for energy storage. Flywheel devices need to be of high efficiency and an important source of losses is the bearings. In addition, the requirement is for the devices to have long lifetimes with minimal or no maintenance. Conventional rolling element bearings can and have been used, but a non-contact bearing, such as a superconducting magnetic bearing, is expected to have a longer lifetime and lower losses. At Cambridge we have constructed a flywheel system. Designed to run in vacuum this incorporates a 40kg flywheel supported on superconducting magnetic bearings. The production device will be a 5kW device storing 5 kWh of retrievable energy at 50,000 rpm. The Cambridge system is being developed in parallel with a similar device supported on a conventional bearing. This will allow direct performance comparisons. Although superconducting bearings are increasingly well understood, of major importance are the cryogenics and special attention is being paid to methods of packaging and insulating the superconductors to cut down radiation losses. The work reported here is part of a three-year program of work supported by the EPSRC. © 1999 IEEE.

Half-bridge SIC inverter for hybrid electric vehicles: Design, development and testing at higher operating temperature

In recent years, Silicon Carbide (SiC) semiconductor devices have shown promise for high density power electronic applications, due to their electrical and thermal properties. In this paper, the performance of SiC JFETs for hybrid electric vehicle (HEV) applications is investigated at heatsink temperatures of 100 °C. The thermal runaway characteristics, maximum current density and packaging temperature limitations of the devices are considered and the efficiency implications discussed. To quantify the power density capabilities of power transistors, a novel 'expression of rating' (EoR) is proposed. A prototype single phase, half-bridge voltage source inverter using SiC JFETs is also tested and its performance at 25 °C and 100 °C investigated.

Electroluminescence in Single Layer MoS2

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

Optical properties of silicon rich oxides

Thermally treated silicon rich oxides (SRO) used as starting material for the fabrication of silicon nanodots represent the basis of tunable bandgap nanostructured materials for optoelectronic and photonic applications. The optical modelization of such materials is of great interest, as it allows the simulation of reflectance and transmittance (R&T) spectra, which is a powerful non destructive tool in the determination of phase modifications (clustering, precipitation of new phases, crystallization) upon thermal treatments. In this paper, we study the optical properties of a variety of as-deposited and furnace annealed SRO materials. The different phases are treated by means of the effective medium approximation. Upon annealing at low temperature, R&T spectra show the precipitation of amorphous silicon nanoparticles, while the crystallization occurring at temperatures higher than 1000 °C is also clearly identified, in agreement with structural results. The existing literature on the optical properties of the silicon nanocrystals is reviewed, with attention on the specificity of the compositional and structural characteristics of the involved material. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and luminescence properties of erbium silicate thin films

We have studied the structure and the room temperature luminescence of erbium silicate thin films deposited by rf magnetron sputtering. Films deposited on silicon oxide layers are characterized by good structural properties and excellent stability. The optical properties of these films are strongly improved by rapid thermal annealing processes performed in the range of temperature 800-1250 °C. In fact through the reduction of the defect density of the material, a very efficient room temperature photoluminescence at 1535 nm is obtained. We have also investigated the influence of the annealing ambient, by finding that treatments in O2 atmosphere are significantly more efficient in improving the optical properties of the material with respect to processes in N2. Upconversion effects become effective only when erbium silicate is excited with high pump powers. The evidence that all Er atoms (about 1022 cm-3) in erbium silicate films are optically active suggests interesting perspectives for optoelectronic applications of this material. © 2007 Elsevier B.V. All rights reserved.

Towards a fast electro-thermo-mechanical IGBT/Diode simulation framework for design of reliable power electronic converters

This paper describes a methodology that enables fast and reasonably accurate prediction of the reliability of power electronic modules featuring IGBTs and p-i-n diodes, by taking into account thermo-mechanical failure mechanisms of the devices and their associated packaging. In brief, the proposed simulation framework performs two main tasks which are tightly linked together: (i) the generation of the power devices' transient thermal response for realistic long load cycles and (ii) the prediction of the power modules' lifetime based on the obtained temperature profiles. In doing so the first task employs compact, physics-based device models, power losses lookup tables and polynomials and combined material-failure and thermal modelling, while the second task uses advanced reliability tests for failure mode and time-to-failure estimation. The proposed technique is intended to be utilised as a design/optimisation tool for reliable power electronic converters, since it allows easy and fast investigation of the effects that changes in circuit topology or devices' characteristics and packaging have on the reliability of the employed power electronic modules. © 2012 IEEE.

Shock transmission in a coupled beam system

This paper investigates the circumstances under which high peak acceleration can occur in the internal parts of a system when subjected to impulsive driving on the outside. Motivating examples include the design of packaging for transportation of fragile items. The system is modelled in an idealised form using two beams coupled with point connections. A Rayleigh-Ritz model of such coupled beams was validated against measurements on a particular beam system, then the model was used to explore the acceleration response to impulsive driving in the time, frequency and spatial domains. This study is restricted to linear vibration response and additional mechanisms for high internal acceleration due to nonlinear effects such as internal impacts are not considered. Using Monte Carlo simulation in which the indirectly driven beam was perturbed by randomly placed point masses a wide range of system behaviour was explored. This facilitates identification of vulnerable configurations that can lead to high internal acceleration. The results from the study indicate the possibility of curve veering influencing the peak acceleration amplification. The possibility of veering within an ensemble was found to be dependent on the relative coupling strength of the modes. Understanding of the mechanism may help to avoid vulnerable cases, either by design or by preparatory vibration testing. © 2013 Elsevier Ltd.

Novel ZnO nanorod films by chemical solution deposition for planar device applications.

Smooth and continuous ZnO films consisting of densely packed ZnO nanorods (NRs), which can be used for electronic device fabrication, were synthesized using a hydro-thermo-chemical solution deposition method. Such devices would have the novelty of high performance, benefiting from the inherited unique properties of the nanomaterials, and can be fabricated on these smooth films using a conventional, low cost planar process. Photoluminescence measurements showed that the NR films have much stronger shallow donor to valence band emissions than those from discrete ZnO NRs, and hence have the potential for the development of ZnO light emission diodes and lasers, etc. The NR films have been used to fabricate large area surface acoustic wave devices by conventional photolithography. These demonstrated two well-defined resonant peaks and their potential for large area device applications. The chemical solution deposition method is simple, reproducible, scalable and economic. These NR films are suitable for large scale production on cost-effective substrates and are promising for various fields such as sensing systems, renewable energy and optoelectronic applications.

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵ cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.