Dissolving and aligning carbon nanotubes in thermotropic liquid crystals.

It has been widely recognized that the combination of carbon nanotubes (CNTs) and low molar mass thermotropic liquid crystals (tLCs) not only provides a useful way to align CNTs, but also dramatically enhances the tLC performance especially in the liquid crystal display technology. Such CNT-tLC nanocomposites have ignited hopes to address many stubborn problems within the field, such as low contrast, slow response, and narrow view angle. However, this material development has been limited by the poor solubility of CNTs in tLCs. Here, we describe an effective strategy to solve the problem. Prior to integrating with tLCs, pristine CNTs are physically "coated" by a liquid crystalline polymer (LCP) which is compatible with tLCs. The homogeneous CNT-tLC composite obtained in this way is stable for over 6 months, and the concentration of CNTs in tLCs can reach 1 wt %. We further demonstrate the alignment of CNTs at high CNT concentrations by an electric field with a theory to model the impedance response of the CNT-tLC mixture.

Calculation of the electronic structure of carbon films using electron energy loss spectroscopy.

The detailed understanding of the electronic properties of carbon-based materials requires the determination of their electronic structure and more precisely the calculation of their joint density of states (JDOS) and dielectric constant. Low electron energy loss spectroscopy (EELS) provides a continuous spectrum which represents all the excitations of the electrons within the material with energies ranging between zero and about 100 eV. Therefore, EELS is potentially more powerful than conventional optical spectroscopy which has an intrinsic upper information limit of about 6 eV due to absorption of light from the optical components of the system or the ambient. However, when analysing EELS data, the extraction of the single scattered data needed for Kramers Kronig calculations is subject to the deconvolution of the zero loss peak from the raw data. This procedure is particularly critical when attempting to study the near-bandgap region of materials with a bandgap below 1.5 eV. In this paper, we have calculated the electronic properties of three widely studied carbon materials; namely amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C) and C60 fullerite crystal. The JDOS curve starts from zero for energy values below the bandgap and then starts to rise with a rate depending on whether the material has a direct or an indirect bandgap. Extrapolating a fit to the data immediately above the bandgap in the stronger energy loss region was used to get an accurate value for the bandgap energy and to determine whether the bandgap is direct or indirect in character. Particular problems relating to the extraction of the single scattered data for these materials are also addressed. The ta-C and C60 fullerite materials are found to be direct bandgap-like semiconductors having a bandgaps of 2.63 and 1.59eV, respectively. On the other hand, the electronic structure of a-C was unobtainable because it had such a small bandgap that most of the information is contained in the first 1.2 eV of the spectrum, which is a region removed during the zero loss deconvolution.

GHz modulation of carbon nanotube cathodes for microwave amplifiers

Cold cathodes based on carbon nanotubes (CNs) allow to produce a pulsed/directly modulated electron beam. Using an array of vertically aligned CNs that exhibit an aspect ratio of around 200, we demonstrated the modulation of a 1.5 A/cm2 beam at 1.5 GHz frequency. Such CN cathodes are very promising for their use in a new generation of compact and low cost microwave amplifiers that operates between 30 and 100 GHz. ©2005 IEEE.

Carbon nanotube cathodes as electron sources for microwave amplifiers

Cold cathodes based on carbon nanotubes allow to produce a modulated electron beam. Using an array of vertically aligned CNs that exhibit an aspect ratio of about 200, we demonstrated the modulation of a high current density beam (∼ 1 A/cm2) at 1.5 and 32 GHz frequencies. Such CN cathodes are very promising for their use in a new generation of compact, highly efficient and low cost amplifiers that operate between 10 and 100 GHz. © 2007 IEEE.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Organic carbon in the sediments of the lower reaches of Periar River

Sediments are indicators of the quality of water overlying them and hence, useful in the assessment of environmental pollution. Temporal and spatial variations in sediment characteristics and organic carbon content from 9 stations in the lower reaches of Periyar River an area in Cochin Backwater, India which is polluted from different sources were studied for one year during 1981. Variations in colour and texture of sediments were brought about by changes in the grain size and state of oxidation of organic matter. The colour of the sediment varied from greyish black at stations 1 and 2, brownish at station 3, black at stations 4 to 8 and reddish at station 9. Organic carbon and sediment texture showed a direct relationship at all stations except at station 9 where organic carbon content showed an irregular pattern. Overall range of organic carbon content was between 1.19 and 29.6 mg.g super(-1). The mean organic carbon of the stations ranged between 6.8 mg.g super(-1) (station 5) and 20.8 mg.g super(-1) (station 9). On the whole temporal variations were considerable with high values at station 9 and low values at station 5. Fluctuations were more at stations 6, 7 and 8.

Deposition of diamond-like carbon films by photon-enhanced chemical vapour deposition of methane using a windowless hydrogen lamp

Thin films of diamond-like carbon (DLC) have been deposited using a novel photon-enhanced chemical vapour deposition (photo-CVD) method. This low energy method may be a way to produce better interfaces in electronic devices by reducing damage due to ion bombardment. Methane requires high energy photons for photolysis to take place and these are not transmitted in most photo-CVD methods owing to the presence of a window between the lamp and the deposition environment. In our photo-CVD system there is no window and all the high energy photons are transmitted into the reaction gas. Initial work has proved promising and this paper presents recent results. Films have been characterized by measuring electron energy loss spectra, by ellipsometry and by fabricating and testing diode structures. Results indicate that the films are of a largely amorphous nature and are semiconducting. Diode structures have on/off current ratios of up to 106.

Field emission from tetrahedrally bonded amorphous carbon

The field emission behaviour of a series of Tetrahedrally Bonded Amorphous Carbon (ta-C) films has been measured. The films were produced using a Filtered Cathodic Vacuum Arc System. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have a threshold field of order 10-15 V/μm and optimally nitrogen-doped films exhibit fields as low as 5 V/μm. The emission as a function of back contact and front surface condition has also been considered and shows that the back contact has only a minor effect on emission efficiency. However, after etching in either an oxygen or hydrogen plasma, the films show a marked reduction in threshold field, down to as low as 2-3 V/μm, and a marked improvement in emission site density.

Nanostructured carbon films from supersonic cluster beam deposition: Structure and morphology

Nanostructured carbon thin films have been grown by deposition of cluster beams produced by a supersonic expansion. Due to separation effects typical of supersonic beams, films with different nanostructures can be grown by the simple intercepting of different regions of the cluster beam with a substrate. Films show a low-density porous structure, which has been characterized by Raman and Brillouin spectroscopy. Film morphology suggests that growth processes are similar to those occurring in a ballistic deposition regime.

Tetrahedrally bonded amorphous carbon for field-emission displays

Field emission from a series of tetrahedrally bonded amorphous-carbon (ta-C) films, deposited in a filtered cathodic vacuum arc, has been measured. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have threshold fields of the order 10-15 V/μm and optimally nitrogen doped films exhibited fields as low as 5 V/μm. In order to gain further understanding of the mechanism of field emission, the films were also subjected to H2, Ar, and O2 plasma treatments and were also deposited onto substrates of different work function. The threshold field, emission current, emission site densities were all significantly improved by the plasma treatment, but little dependence of these properties on work function of the substrate was observed. This suggests that the main barrier to emission in these films is at the front surface.

Optical gap in carbon nitride films

In this paper we study the effect of introducing nitrogen into different carbon networks. Two kinds of carbon nitride films were deposited: (a) Using a DC-magnetron sputtering system sp2 bonded carbon nitride (a-CN) films were deposited and (b) Using a combination of filtered cathodic vacuum arc and a low-pressure N2 plasma source, N was introduced into sp3 carbon networks (ta-C), leading to the formation of a more dense CN film named ta-CN. For ta-CN films we found that the optical gap initially decreases as the N content and the sp2 fraction rises, but above a certain N quantity there is a level-off of the value, and the gap then remains constant despite further increases in the fraction and clustering of the sp2 phase. However, for a-CN films the optical gap increases with the nitrogen content. These two different trends are not easily explained using the same framework as that for carbon films, in which any decrease in the band gap is associated to an increase in the sp2 fraction or its clustering. Here we discuss the conditions that lead to high optical gap in sp2-bonded carbon nitride samples, which are clearly not associated to the presence of any crystalline super-hard phase. We also compared other differences in properties observed between the two films, such as deposition rate, infrared and Raman spectra. © 2003 Elsevier Science B.V. All rights reserved.