Ballistic performance of nanocrystalline and nanotwinned ultrafine crystal steel

Because of their remarkable mechanical properties, nanocrystalline metals have been the focus of much research in recent years. Refining their grain size to the nanometer range (<100 nm) effectively reduces their dislocation mobility, thus achieving very high yield strength and surface hardness—as predicted by the Hall–Petch relation—as well as higher strain-rate sensitivity. Recent works have additionally suggested that nanocrystalline metals exhibit an even higher compressive strength under shock loading. However, the increase in strength of these materials is generally accompanied by an important reduction in ductility. As an alternative, efforts have been focused on ultrafine crystals, i.e. polycrystals with a grain size in the range of 500 nm to 1 μm, in which “growth twins” (twins introduced inside the grain before deformation) act as barriers against dislocation movement, thus increasing the strength in a similar way as nanocrystals but without significant loss of ductility. Due to their outstanding mechanical properties, both nanocrystalline and nanotwinned ultrafine crystalline steels appear to be relevant candidates for ballistic protection. The aim of the present work is to compare their ballistic performance against coarse-grained steel, as well as to identify the effect of the hybridization with a carbon fiber–epoxy composite layer. Hybridization is proposed as a way to improve the nanocrystalline brittle properties in a similar way as is done with ceramics in other protection systems. The experimental campaign is finally complemented by numerical simulations to help identify some of the intrinsic deformation mechanisms not observable experimentally. As a conclusion, nanocrystalline and nanotwinned ultrafine crystals show a lower energy absorption than coarse-grained steel under ballistic loading, but under equal impact conditions with no penetration, deformation in the impact direction is smaller by nearly 40%. This a priori surprising difference in the energy absorption is rationalized by the more important local contribution of the deviatoric stress vs. volumetric stress under impact than under uniaxial deformation. Ultimately, the deformation advantage could be exploited in the future for personal protection systems where a small deformation under impact is of key importance.

Laser shock processing: an emerging technique for the improvement of fatigue life and surface properties of high reliability metallic components

•Introduction •Process Experimental Setup •Experimental Procedure •Experimental Results for Al2024 - T351, Ti6Al4V and AISI 316L - Surface Roughness and Compactation - Residual stresses - Tensile Strength - Fatigue Life •Discussion and Outlook - Prospects for technological applications of LSP

Application of high-intensity short-pulse lasers to the mechanical and surface properties improvement of high reliability metallic components by shock processing

Outline: • Introduction • Process Experimental Setup • Experimental Procedure • Experimental Results for Al2024-T351 and Ti6Al4V - Residual stresses - Tensile Strength - Fatigue Life • Discussion and Outlook - Prospects for technological applications of LSP

The Influence of Different Surface Treatments on the Mechanical Strength of Silicon Wafers

The implementation of photovoltaic solar energy based on silicon is being slowed down by the shortage of raw material. In this context, the use of thinner wafers arises as a solution reducing the amount of silicon in the photovoltaic modules. On the other hand, the manufacturing process with thinner wafers can become complicated with traditional tools. The high number of damaged wafers reduces the global yield. It’s known that edge and surface cracks and defects determine the mechanical strength of wafers. There are several ways of removing these defects e. g. subjecting wafers to a mechanical polishing or to a chemical etching. This paper shows a comparison between different surface treatments and their influence on the mechanical strength.

Properties and applications of high electron density structures based on InN and related compounds

El objetivo principal del presente trabajo es estudiar y explotar estructuras que presentan un gas bidimensional de electrones (2DEG) basadas en compuestos nitruros con alto contenido de indio. Existen muchas preguntas abiertas, relacionadas con el nitruro de indio y sus aleaciones, algunas de las cuales se han abordado en este estudio. En particular, se han investigado temas relacionados con el análisis y la tecnología del material, tanto para el InN y heteroestructuras de InAl(Ga)N/GaN como para sus aplicaciones a dispositivos avanzados. Después de un análisis de la dependencia de las propiedades del InN con respecto a tratamientos de procesado de dispositivos (plasma y térmicos), el problema relacionado con la formación de un contacto rectificador es considerado. Concretamente, su dificultad es debida a la presencia de acumulación de electrones superficiales en la forma de un gas bidimensional de electrones, debido al pinning del nivel de Fermi. El uso de métodos electroquímicos, comparados con técnicas propias de la microelectrónica, ha ayudado para la realización de esta tarea. En particular, se ha conseguido lamodulación de la acumulación de electrones con éxito. En heteroestructuras como InAl(Ga)N/GaN, el gas bidimensional está presente en la intercara entre GaN y InAl(Ga)N, aunque no haya polarización externa (estructuras modo on). La tecnología relacionada con la fabricación de transistores de alta movilidad en modo off (E-mode) es investigada. Se utiliza un método de ataque húmedo mediante una solución de contenido alcalino, estudiando las modificaciones estructurales que sufre la barrera. En este sentido, la necesidad de un control preciso sobre el material atacado es fundamental para obtener una estructura recessed para aplicaciones a transistores, con densidad de defectos e inhomogeneidad mínimos. La dependencia de la velocidad de ataque de las propiedades de las muestras antes del tratamiento es observada y comentada. Se presentan también investigaciones relacionadas con las propiedades básicas del InN. Gracias al uso de una puerta a través de un electrolito, el desplazamiento de los picos obtenidos por espectroscopia Raman es correlacionado con una variación de la densidad de electrones superficiales. En lo que concierne la aplicación a dispositivos, debido al estado de la tecnología actual y a la calidad del material InN, todavía no apto para dispositivos, la tesis se enfoca a la aplicación de heteroestructuras de InAl(Ga)N/GaN. Gracias a las ventajas de una barrera muy fina, comparada con la tecnología de AlGaN/GaN, el uso de esta estructura es adecuado para aplicaciones que requieren una elevada sensibilidad, estando el canal 2DEG más cerca de la superficie. De hecho, la sensibilidad obtenida en sensores de pH es comparable al estado del arte en términos de variaciones de potencial superficial, y, debido al poco espesor de la barrera, la variación de la corriente con el pH puede ser medida sin necesidad de un electrodo de referencia externo. Además, estructuras fotoconductivas basadas en un gas bidimensional presentan alta ganancia debida al elevado campo eléctrico en la intercara, que induce una elevada fuerza de separación entre hueco y electrón generados por absorción de luz. El uso de metalizaciones de tipo Schottky (fotodiodos Schottky y metal-semiconductormetal) reduce la corriente de oscuridad, en comparación con los fotoconductores. Además, la barrera delgada aumenta la eficiencia de extracción de los portadores. En consecuencia, se obtiene ganancia en todos los dispositivos analizados basados en heteroestructuras de InAl(Ga)N/GaN. Aunque presentando fotoconductividad persistente (PPC), los dispositivos resultan más rápidos con respeto a los valores que se dan en la literatura acerca de PPC en sistemas fotoconductivos. ABSTRACT The main objective of the present work is to study and exploit the two-dimensionalelectron- gas (2DEG) structures based on In-related nitride compounds. Many open questions are analyzed. In particular, technology and material-related topics are the focus of interest regarding both InNmaterial and InAl(Ga)N/GaNheterostructures (HSs) as well as their application to advanced devices. After the analysis of the dependence of InN properties on processing treatments (plasma-based and thermal), the problemof electrical blocking behaviour is taken into consideration. In particular its difficulty is due to the presence of a surface electron accumulation (SEA) in the form of a 2DEG, due to Fermi level pinning. The use of electrochemical methods, compared to standard microelectronic techniques, helped in the successful realization of this task. In particular, reversible modulation of SEA is accomplished. In heterostructures such as InAl(Ga)N/GaN, the 2DEGis present at the interface between GaN and InAl(Ga)N even without an external bias (normally-on structures). The technology related to the fabrication of normally off (E-mode) high-electron-mobility transistors (HEMTs) is investigated in heterostructures. An alkali-based wet-etching method is analysed, standing out the structural modifications the barrier underwent. The need of a precise control of the etched material is crucial, in this sense, to obtain a recessed structure for HEMT application with the lowest defect density and inhomogeneity. The dependence of the etch rate on the as-grown properties is observed and commented. Fundamental investigation related to InNis presented, related to the physics of this degeneratematerial. With the help of electrolyte gating (EG), the shift in Raman peaks is correlated to a variation in surface eletron density. As far as the application to device is concerned, due to the actual state of the technology and material quality of InN, not suitable for working devices yet, the focus is directed to the applications of InAl(Ga)N/GaN HSs. Due to the advantages of a very thin barrier layer, compared to standard AlGaN/GaN technology, the use of this structure is suitable for high sensitivity applications being the 2DEG channel closer to the surface. In fact, pH sensitivity obtained is comparable to the state-of-the-art in terms of surface potential variations, and, due to the ultrathin barrier, the current variation with pH can be recorded with no need of the external reference electrode. Moreover, 2DEG photoconductive structures present a high photoconductive gain duemostly to the high electric field at the interface,and hence a high separation strength of photogenerated electron and hole. The use of Schottky metallizations (Schottky photodiode and metal-semiconductor-metal) reduce the dark current, compared to photoconduction, and the thin barrier helps to increase the extraction efficiency. Gain is obtained in all the device structures investigated. The devices, even if they present persistent photoconductivity (PPC), resulted faster than the standard PPC related decay values.

High temperature micropillar compression of Al/SiC nanolaminates

The effect of the temperature on the compressive stress–strain behavior of Al/SiC nanoscale multilayers was studied by means of micropillar compression tests at 23 °C and 100 °C. The multilayers (composed of alternating layers of 60 nm in thickness of nanocrystalline Al and amorphous SiC) showed a very large hardening rate at 23 °C, which led to a flow stress of 3.1 ± 0.2 GPa at 8% strain. However, the flow stress (and the hardening rate) was reduced by 50% at 100 °C. Plastic deformation of the Al layers was the dominant deformation mechanism at both temperatures, but the Al layers were extruded out of the micropillar at 100 °C, while Al plastic flow was constrained by the SiC elastic layers at 23 °C. Finite element simulations of the micropillar compression test indicated the role played by different factors (flow stress of Al, interface strength and friction coefficient) on the mechanical behavior and were able to rationalize the differences in the stress–strain curves between 23 °C and 100 °C.

Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon

The usage of more inexpensive silicon feedstock for crystallizing mc-Si blocks promises cost reduction for the photovoltaic market. For example, less expensive substrates of upgraded metallurgical silicon (UMG-Si) are used as a mechanical support for the epitaxial solar cell. This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Metals like aluminum (Al) can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, silicon oxide (SiOx) lowers the mechanical strength of mc-Si due to thermal residual stresses and stress intensification when an external load is applied in the surrounding of the particle. Silicon carbide (SiC) introduces thermal residual stresses and intensifies slightly the stress in the surrounding of the particle but can have a toughening effect on the silicon matrix. Finally, silicon nitride (Si3N4) does not influence significantly the mechanical strength of mc- Si and can have a toughening effect on the silicon matrix.

Influence of high aluminium content on the mechanical properties of directionally solidified multicrystalline silicon

The purpose of this research is the mechanical characterisation of multicrystalline silicon crystallised from silicon feedstock with a high content of aluminium for photovoltaic applications. The mechanical strength, fracture toughness and elastic modulus were measured at different positions within the multicrystalline silicon block to quantify the impact of the segregation of impurities on these mechanical properties. Aluminium segregated to the top of the block and caused extensive micro-cracking of the silicon matrix due to the thermal mismatch between silicon and the aluminium inclusions. Silicon nitride inclusions reduced the fracture toughness and caused failure by radial cracking in its surroundings due to its thermal mismatch with silicon. However, silicon carbide increased the fracture toughness and elastic modulus of silicon.

Eccentric Exercise in Treatment of Patellar Tendinopathy in High Level Basketball Players. A Randomized Clinical Trial.

Chronic patellar tendinopathy is a common pathology in sporting population. To date, there is no agreed upon protocol as election treatment. Eccentric exercises have been used with satisfactory outcomes (3). The purpose of this trial was to compare the effects of two eccentric exercise protocols.

Eccentric exercise in treatment of patellar tendinopathy in high level basketball players. A randomized clinical trial

Chronic patellar tendinopathy is a common pathology in sporting population. To date, there is no agreed upon protocol as election treatment. Eccentric exercises have been used with satisfactory outcomes.

Biofouling on PM stainless steels

Powder metallurgy (PM) consists in obtaining pieces of powder metal that are processed at high temperatures and pressure. Due to its characteristic manufacturing process, the materials can have a specific and controlled porosity, which makes it possible to obtain porous parts such as ball bearings, gears, and roller bearings, etc. This porosity is what made us think about how easy biofouling would be on these materials and its possible environmental applications.

Kinetics of photo-induced electron transfer from high-potential iron-sulfur protein to the photosynthetic reaction center of the purple phototroph Rhodoferax fermentans.

The kinetics of photo-induced electrontransfer from high-potential iron-sulfur protein (HiPIP) to the photosynthetic reaction center (RC) of the purple phototroph Rhodoferarfermentans were studied. The rapid photooxidation of heme c-556 belonging to RC is followed, in the presence of HiPIP, by a slower reduction having a second-order rate constant of 4.8 x 10(7) M(-1) x s(-1). The limiting value of kobs at high HiPIP concentration is 95 s(-1). The amplitude of this slow process decreases with increasing HiPIP concentration. The amplitude of a faster phase, observed at 556 and 425 nm and involving heme c-556 reduction, increases proportionately. The rate constant of this fast phase, determined at 425 and 556 nm, is approximately 3 x 10(5) s(-1). This value is not dependent on HiPIP concentration, indicating that it is related to a first-order process. These observations are interpreted as evidence for the formation of a HiPIP-RC complex prior to the excitation flash, having a dissociation constant of -2.5 microM. The fast phase is absent at high ionic strength, indicating that the complex involves mainly electrostatic interactions. The ionic strength dependence of kobs for the slow phase yields a second-order rate constant at infinite ionic strength of 5.4 x 10(6) M(-1) x s(-1) and an electrostatic interaction energy of -2.1 kcal/mol (1 cal = 4.184 J). We conclude that Rhodoferar fermentans HiPIP is a very effective electron donor to the photosynthetic RC.

Promoter architecture in the flagellar regulon of Bacillus subtilis: high-level expression of flagellin by the sigma D RNA polymerase requires an upstream promoter element.

Flagellin is one of the most abundant proteins in motile bacteria, yet its expression requires a low abundance sigma factor (sigma 28). We show that transcription from the Bacillus subtilis flagellin promoter is stimulated 20-fold by an upstream A+T-rich region [upstream promoter (UP) element] both in vivo and in vitro. This UP element is contacted by sigma 28 holoenzyme bound at the flagellin promoter and binds the isolated alpha 2 subassembly of RNA polymerase. The UP element increases the affinity of RNA polymerase for the flagellin promoter and stimulates transcription when initiation is limited by the rate of RNA polymerase binding. Comparison with other promoters in the flagellar regulon reveals a bipartite architecture: the -35 and -10 elements confer specificity for sigma 28, while promoter strength is determined largely by upstream DNA sequences.

Estudo da geometria da aresta de corte de ferramentas aplicadas ao torneamento de superligas à base de níquel com alta velocidade de corte

Pesquisadores e indústrias de todo o mundo estão firmemente comprometidos com o propósito de fazer o processo de usinagem ser precisamente veloz e produtivo. A forte concorrência mundial gerou a procura por processos de usinagem econômicos, com grande capacidade de produção de cavacos e que produzam peças com elevada qualidade. Dentre as novas tecnologias que começaram a ser empregadas, e deve tornar-se o caminho certo a ser trilhado na busca da competitividade em curto espaço de tempo, está a tecnologia de usinagem com altas velocidades (HSM de High Speed Machining). A tecnologia HSM surge como componente essencial na otimização dos esforços para manutenção e aumento da competitividade global das empresas. Durante os últimos anos a usinagem com alta velocidade tem ganhado grande importância, sendo dada uma maior atenção ao desenvolvimento e à disponibilização no mercado de máquinas-ferramentas com rotações muito elevadas (20.000 - 100.000 rpm). O processo de usinagem com alta velocidade está sendo usado não apenas para ligas de alumínio e cobre, mas também para materiais de difícil usinabilidade, como os aços temperados e superligas à base de níquel. Porém, quando se trata de materiais de difícil corte, têm-se observado poucas publicações, principalmente no processo de torneamento. Mas, antes que a tecnologia HSM possa ser empregada de uma forma econômica, todos os componentes envolvidos no processo de usinagem, incluindo a máquina, o eixo-árvore, a ferramenta e o pessoal, precisam estar afinados com as peculiaridades deste novo processo. No que diz respeito às máquinas-ferramenta, isto significa que elas têm que satisfazer requisitos particulares de segurança. As ferramentas, devido à otimização de suas geometrias, substratos e revestimentos, contribuem para o sucesso deste processo. O presente trabalho objetiva estudar o comportamento de diversas geometrias ) de insertos de cerâmica (Al2O3 + SiCw e Al2O3 + TIC) e PCBN com duas concentrações de CBN na forma padrão, assim como modificações na geometria das arestas de corte empregadas em torneamento com alta velocidade em superligas à base de níquel (Inconel 718 e Waspaloy). Os materiais foram tratados termicamente para dureza de 44 e 40 HRC respectivamente, e usinados sob condição de corte a seco e com utilização da técnica de mínima quantidade de lubrificante (minimal quantity lubricant - MQL) visando atender requisitos ambientais. As superligas à base de níquel são conhecidas como materiais de difícil usinabilidade devido à alta dureza, alta resistência mecânica em alta temperatura, afinidade para reagir com materiais da ferramenta e baixa condutividade térmica. A usinagem de superligas afeta negativamente a integridade da peça. Por essa razão, cuidados especiais devem ser tomados para assegurar a vida da ferramenta e a integridade superficial de componentes usinados por intermédio de controle dos principais parâmetros de usinagem. Experimentos foram realizados sob diversas condições de corte e geometrias de ferramentas para avaliação dos parâmetros: força de corte, temperatura, emissão acústica e integridade superficial (rugosidade superficial, tensão residual, microdureza e microestrutura) e mecanismos de desgaste. Mediante os resultados apresentados, recomenda-se à geometria de melhor desempenho nos parâmetros citados e confirma-se a eficiência da técnica MQL. Dentre as ferramentas e geometrias testadas, a que apresentou melhor desempenho foi a ferramenta cerâmica CC650 seguida da ferramenta cerâmica CC670 ambas com formato redondo e geometria 2 (chanfro em T de 0,15 x 15º com raio de aresta de 0,03 mm).

Tenacidade ao impacto e resistência a fadiga de aço API 5L X70 modificado ao Nb

O transporte de gás e derivados de petróleo é realizado pelo uso de tubulações, denominadas de oleodutos ou gasodutos, que necessitam de elevados níveis de resistência mecânica e corrosão, aliadas a uma boa tenacidade à fratura e resistência à fadiga. A adição de elementos de liga nesses aços, Ti, V e Nb entre outros, é realizada para o atendimento destes níveis de resistência após o processamento termomecânico das chapas para fabricação destes dutos, utilizando-se a norma API 5L do American Petroleum Institute, API, para a classificação destes aços. A adição de elementos de liga em associação com o processamento termomecânico visa o refino de grão da microestrutura austenítica, o qual é transferido para a estrutura ferrítica resultante. O Brasil é o detentor das maiores reservas mundiais de nióbio, que tem sido apresentado como refinador da microestrutura mais eficiente que outros elementos, como o V e Ti. Neste trabalho dois aços, denominados Normal e Alto Nb foram estudados. A norma API propõe que a soma das concentrações de Nióbio, Vanádio e Titânio devem ser menores que 0,15% no aço. As concentrações no aço contendo mais alto Nb é de 0,107%, contra 0,082% do aço de composição normal, ou seja, ambos atendem o valor especificado pela norma API. Entretanto, os aços são destinados ao uso em dutovias pela PETROBRÁS que impõe limites nos elementos microligantes para os aços aplicados em dutovias. Deste modo estudos foram desenvolvidos para verificar se os parâmetros de resistência à tração, ductilidade, tenacidade ao impacto e resistência à propagação de trinca por fadiga, estariam em acordo com a norma API 5L grau X70 e com os resultados que outros pesquisadores têm encontrado para aços dessa classe. Ainda, como para a formação de uma dutovia os tubos são unidos uns aos outros por processo de soldagem (circunferencial), o estudo de fadiga foi estendido para as regiões da solda e zona termicamente afetada (ZTA). Como conclusão final observa-se que o aço API 5L X70 com Nb modificado, produzido conforme processo desenvolvido pela ArcelorMittal - Tubarão, apresenta os parâmetros de resistência e ductilidade em tração, resistência ao impacto e resistência a propagação de trinca em fadiga (PTF) similar aos aços API 5L X70 com teores de Nb = 0,06 % peso e aqueles da literatura com teores de Nb+Ti+V < 0,15% peso. O metal base, metal de solda e zona termicamente afetada apresentaram curvas da/dN x ΔK similares, com os parâmetros do material C e m, da equação de Paris, respectivamente na faixa de 3,3 - 4,2 e 1.3x10-10 - 5.0x10-10 [(mm/ciclo)/(MPa.m1/2)m].