Synthesis of Eu3+-activated BiOF and BiOBr phosphors: photoluminescence, Judd-Ofelt analysis and photocatalytic properties

A series of Bi1-xEuxOX (X = F and Br; x = 0, 0.01, 0.03 and 0.05) phosphors were synthesized at relatively low temperature and short duration (500 degrees C, 1 h). Rietveld refinement results verified that all the compounds were crystallized in the tetragonal structure with space group P4/nmm (no. 129). Photoluminescence spectra exhibit characteristic luminescence D-5(0) -> F-7(J) (J = 0-4) intra-4f shell Eu3+ ion transitions. The magnetic dipole (D-5(0) -> F-7(1)) transition dominates the emission of BiOF:Eu3+, while the electric dipole (D-5(0) -> F-7(2)) peak was stronger in BiOBr:Eu3+ phosphors. The evaluated CIE color coordinates for Bi0.95Eu0.05OBr (0.632, 0.358) are close to the commercial Y2O3:Eu3+ (0.645, 0.347) and Y2O2S:Eu3+ (0.647, 0.343) red phosphors. Intensity parameters (Omega(2), Omega(4)) and various radiative properties such as transition rates (A), branching ratios (beta), stimulated emission cross-section (sigma(e)), gain bandwidth (sigma(e) x Delta lambda(eff)) and optical gain (sigma(e) x tau) were calculated using the Judd-Ofelt theory. It was observed that BiOBr:Eu3+ phosphors have a long lifetime (tau) and better optical gain (sigma(e) x tau) as compared to reported Eu3+ doped materials. Furthermore, these compounds exhibit excellent photocatalytic activity for the degradation of rhodamine B dye under visible light irradiation. The determined radiative properties and photocatalytic results revealed that BiOBr:Eu3+ phosphors have potential applications in energy and environmental remedies, such as to develop red phosphors for white light-emitting diodes, red lasers and to remove toxic organic industrial effluents.

Impact of lifetime control on the threshold of quantum dot lasers

Despite significant improvements in their properties as emitters, colloidal quantum dots have not had much success in emerging as suitable materials for laser applications. Gain in most colloidal systems is short lived, and needs to compete with biexcitonic decay. This has necessitated the use of short pulsed lasers to pump quantum dots to thresholds needed for amplified spontaneous emission or lasing. Continuous wave pumping of gain that is possible in some inorganic phosphors has therefore remained a very distant possibility for quantum dots. Here, we demonstrate that trilayer heterostructures could provide optimal conditions for demonstration of continuous wave lasing in colloidal materials. The design considerations for these materials are discussed in terms of a kinetic model. The electronic structure of the proposed dot architectures is modeled within effective mass theory.

Die Filling Behaviour of Semi Solid A356 Al Alloy Slurry During Rheo Pressure Die Casting

The present work discusses the findings obtained from simulations of semi solid die filling of a steering knuckle, prior to actual component development using in-house developed rheo pressure die casting system. Die filling capability of A356 Al alloy at semi-solid state has been investigated using commercial software Flow-3Dcast to optimise the pouring temperature of semi-solid slurry into the die cavity, while all other variables such as gating design, die preheat temperature and injection velocity are kept constant based on the prior knowledge obtained from trial numerical simulations and experimentation. Efforts have been made to nullify the essence of costly, time consuming experiments towards obtaining high-quality castings out of the findings obtained from numerical simulations. The optimum pouring temperature identified in the present study is 610 A degrees C, which facilitates smoother slurry flow, minimum surface defect concentration, uniform temperature field and solid fraction distribution within the component cavity.

Low Threshold Quantum Dot Lasers

Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. Despite their overall successes as emitters, their impact as laser materials has been severely limited. Eliciting stimulated emission from quantum dots requires excitation by intense short pulses of light typically generated using other lasers. In this Letter, we develop a new class of quantum dots that exhibit gain under conditions of extremely low levels of continuous wave illumination. We observe thresholds as low as 74 mW/cm(2) in lasers made from these materials. Due to their strong optical absorption as well as low lasing threshold, these materials could possibly convert light from diffuse, polychromatic sources into a laser beam.

20-W average power, high repetition rate, nanosecond pulse with diffraction limit from an all-fiber MOPA system

In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

High-power Nd:YAG planar waveguide laser with YAG and Al2O3 claddings

Thermal effects in Nd:YAG planar waveguide lasers with non-symmetrical claddings are discussed. The heat generated in the active core can be removed more efficiently by directly contacting the active core to the heat sink. Several cladding materials are compared to optimize the heat removal. Furthermore, uniform pumping is achieved with oblique edge-pumping technique. Using quasi-CW pumping at 1 KHz repetition rate, an average output power of 280 W with a slope efficiency of 38% is obtained with a positive unstable resonator. (C) 2008 Elsevier B.V. All rights reserved.

Upconversion fluorescence property of Er3+/Yb3+-codoped novel bismuth-germanium glass

Infrared-to-visible upconversion fluorescence property of Er3+/Yb3+ codoped novel bismuth-germanium glass under 975 nm LD excitation has been studied. Intense green and red emissions centered at 525, 546 and 657 nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. The quadratic dependence of the 525, 546 and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs. The structure of the bismuth-germanium glass has been investigated by peak-deconvolution of FT-Raman spectrum, and the structural information was obtained from the peak wavenumbers. This novel bismuth-germanium glass with low maximum phonon energy (similar to 750 cm(-1)) can be used as potential host material for upconversion lasers. (c) 2005 Elsevier Ltd. All rights reserved.

Intense upconversion luminescence in ytterbium-sensitized thulium-doped novel oxychloride bismuth-germanium glass

Structural and up-conversion fluorescence properties in ytterbium-sensitized thulium-doped novel oxychloride bismuth-germanium glass have been studied. The structure of novel bismuth-germanium glass was investigated by peak-deconvolution of Raman spectrum, and the structural information was obtained from the peak wave numbers. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network, and has an important influence on the up-conversion luminescence. Intense blue and weak red emissions centered at 477 and 650 mn, corresponding to the transitions 1G(4) -> H-3(6) and (1)G(4) -> H-3(4), respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. This novel oxychloride bismuth-germanium glass with low maximum phonon energy (similar to 730 cm(-1)) can be used as potential host material for up-conversion lasers. (c) 2005 Elsevier Ltd. All rights reserved.

Graphene field-effect transistors as room-temperature terahertz detectors

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples. © 2012 Macmillan Publishers Limited. All rights reserved.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.

Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media

In this review, the potential of mode-locked lasers based on advanced quantum-dot ( QD) active media to generate short optical pulses is analysed. A comprehensive review of experimental and theoretical work on related aspects is provided, including monolithic-cavity mode-locked QD lasers and external-cavity mode-locked QD lasers, as well as mode-locked solid-state and fibre lasers based on QD semiconductor saturable absorber mirrors. Performance comparisons are made for state-of-the-art experiments. Various methods for improving important characteristics of mode-locked pulses such as pulse duration, repetition rate, pulse power, and timing jitter through optimization of device design parameters or mode-locking methods are addressed. In addition, gain switching and self-pulsation of QD lasers are also briefly reviewed, concluding with the summary and prospects.

Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots

We have observed an unusual temperature sensitivity of the photoluminescence (PL) peak energy for InAs quantum dots grown on InAs quantum wires (QDOWs) on InP substrate. The net temperature shift of PL wavelength of the QDOWs ranges from 0.8 to -4. angstrom/degrees C depending upon the Si doping concentration in the samples. This unusual temperature behavior can be mainly ascribed to the stress amplification in the QDOWs when the thermal strain is transferred from the surrounding InAs wires. This offers an opportunity for realizing quantum dot laser devices with a temperature insensitive lasing wavelength. (c) 2006 Elsevier Ltd. All rights reserved.

Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

To overcome the isotropic directional emission of an ideal circular microdisk, two kinds of cylindrical mesa-like InGaAlP single quantum well (SQW) microdisks emitting at a visible red wavelength of 0.66 mu m have been fabricated. An anisotropic luminescence pattern was revealed by the microscopic fluorescence (FL) image. FL intensity, preferentially enhanced with twofold symmetry, appeared at the circumference of the InGaAlP SQW microdisks. Our results demonstrated that anisotropic radiation can be achieved by geometry shaping of the disks on the top view two-dimensional boundary slightly deformed from circular shape and/or on the side-view cross-section of the circular mesa by wet etching anisotropic undercut. (C) 2000 Elsevier Science Ltd. All rights reserved.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers

A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim