Determination of odorous compounds in water by headspace solid-phase microextraction-gas chromatography-mass spectrometry

Three major odorous compounds are 2-methylisoborneol ( 2-MIB), geosmin and beta-cyclocitral, which in water were determined by coupling headspace solid-phase microextraction ( HS-SPME) with gas chromatography-mass spectrometry (GC-MS). The operating conditions of HS-SPME, such as fibre type, salt concentration, water temperature, stirring, absorption time and desorption time were studied and discussed.The highest absorption of the odorous compounds were obtained under the following operating conditions as the addition of 30% ( m/V) NaCl, stirring at 60 degrees C for 40 min, using 65 mu m polydimethyl siloxane/divinylbenzene coated fibre. After the odorous compounds had been absorbed in the fibre under the optimal conditions of HSSPME, they were desorbed at 250 degrees C and determined by GC-MS. The limits of detection for geosmin, beta-cyclocitral and 2-MIB in water were 1. 0, 1. 3, 1. 7 ng/L, and the relative standard deviations for them were 4. 9%, 8. 4%, 6. 2%,respectively. There were good linear correlation (the calibration coefficients were all above 0. 997) for the three odorous compounds in the range of 5 similar to 1000 ng/ L. Therefore, trace levels of the odorous compounds at ng/L in water could be quantified by the simple method with satisfactory result.

One-dimensional quantum waveguide theory of Rashba electrons

The ballistic spin transport in one-dimensional waveguides with the Rashba effect is studied. Due to the Rashba effect, there are two electron states with different wave vectors for the same energy. The wave functions of two Rashba electron states are derived, and it is found that their phase depend on the direction of the circuit and the spin directions of two states are perpendicular to the circuit, with the +pi/2 and -pi/2 angles, respectively. The boundary conditions of the wave functions and their derivatives at the intersection of circuits are given, which can be used to investigate the waveguide transport properties of Rashba spin electron in circuits of any shape and structure. The eigenstates of the closed circular and square loops are studied by using the transfer matrix method. The transfer matrix M(E) of a circular arc is obtained by dividing the circular arc into N segments and multiplying the transfer matrix of each straight segment. The energies of eigenstates in the closed loop are obtained by solving the equation det[M(E)-I]=0. For the circular ring, the eigenenergies obtained with this method are in agreement with those obtained by solving the Schrodinger equation. For the square loop, the analytic formula of the eigenenergies is obtained first The transport properties of the AB ring and AB square loop and double square loop are studied using the boundary conditions and the transfer matrix method In the case of no magnetic field, the zero points of the reflection coefficients are just the energies of eigenstates in closed loops. In the case of magnetic field, the transmission and reflection coefficients all oscillate with the magnetic field; the oscillating period is Phi(m)=hc/e, independent of the shape of the loop, and Phi(m) is the magnetic flux through the loop. For the double loop the oscillating period is Phi(m)=hc/2e, in agreement with the experimental result. At last, we compared our method with Koga's experiment. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253752]

1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

Phase uncertainty in calibrating microwave test fixtures

The problem of phase uncertainty arising in calibration of the test fixtures is investigated in this paper, It is shown that the problem exists no matter what kinds of calibration standards are used. It is also found that there is no need to determine the individual S-parameters of the test fixtures. In order to eliminate the problem of phase uncertainty, three different precise (known) reflection standards or one known reflection standard plus one known transmission standard should be used to calibrate symmetrical test fixtures. For the asymmetrical cases, three known standards, including at least one transmission standard, should be used. The thru-open-match (TOM) and thru-short-match (TSM) techniques are the simplest methods, and they have no bandwidth limitation. When the standards are imprecise (unknown), it is recommended to use any suitable technique, such as the thru-reflect-line, line-reflect-line, thru-short-delay, thru-open-delay,line-reflect-match, line-reflect-reflect-match, or multiline methods, to accurately determine the values of the required calibration terms and, in addition, to use the TOM or TSM method with the same imprecise standards to resolve the phase uncertainty.

小麦氮磷肥长期配施对土壤硝态氮淋溶的影响

利用长期肥料定位试验,监测旱地农田土壤硝态氮的淋溶动向,研究施肥量与硝态氮累积量之间的关系,为科学施肥提供参考。【方法】在试验小区0～300cm土壤剖面中,每20cm深度取一个土样,1mol·L-1KCl浸提后以AA3连续流动分析仪测定硝态氮含量。【结果】单施氮肥土壤硝态氮累积峰出现在80～100cm土层和300cm以下土层,当施氮量达到180kg·hm-2·a-1时,0～300cm土层硝态氮累积总量相当于8年的施氮量。单施磷肥对土壤硝态氮分布无影响;氮、磷肥配施时,施氮量增加硝态氮累积量显著增加,配施磷肥后可以减少硝态氮累积量,且施氮量越大减少的越多。过量施用氮肥,即使配施磷肥,硝态氮也能发生淋溶并在100～120cm和240～260cm土层附近累积;二次多项式回归能够较好地反映氮、磷施用量与土壤硝态氮累积量之间的关系。【结论】长期过量施用氮肥,导致硝态氮大量淋溶并形成两个累积峰,科学合理地配施磷肥可以减少硝态氮淋失;旱地麦田长期施用最大产量施肥量,可能导致硝态氮大量累积在土壤深层。

喷灌均匀系数的三次样条两次插值计算方法

为提高喷灌水量分布均匀性评价的准确性,当雨量筒径向布置时,为考虑所有测点数据对插值点降水深的影响,采用径向和周向两次的三次样条插值计算出未知点的降水深,从而计算喷灌均匀系数。以美国雨鸟30PSH型喷头雨量筒间隔为1m和2m的喷洒试验数据,计算网格点取1m和0.25m,分别采用三次样条两次插值法和邻近四点距离线性插值法计算了克里斯琴森均匀系数。结果表明,均匀系数由高至低的顺序依次为采样间隔为2m的线性插值、采样间隔为2m的三次样条两次插值、采样间隔为1m的线性插值和采样间隔为1m的三次样条两次插值。采样间隔2m比1m计算出的均匀系数总体高3~4个百分点,三次样条两次插值法比邻近点距离线性插值法略低1个百分点,2种计算网格点间距下的均匀系数差值小于1个百分点。结果证明,采样间距、插值方法、计算网格间距对均匀系数的影响依次降低,三次样条两次插值法可以用来评价喷灌组合均匀系数。

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method

The influences of microdefects and dislocations on the lattice parameters of undoped semi-insulating GaAs single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi-insulating GaAs was established in this letter. The comparison of this method with coulometric titration indicates that the method of nondestructive measurements is indeed convenient and reliable. (C) 1996 American Institute of Physics.

A fast-settling frequency-presetting PLL frequency synthesizer with process variation compensation and spur reduction

This paper proposes a fast-settling frequency-presetting PLL frequency synthesizer. A mixed-signal VCO and a digital processor are developed to accurately preset the frequency of VCO and greatly reduce the settling time. An auxiliary tuning loop is introduced in order to reduce reference spur caused by leakage current. The digital processor can automatically compensate presetting frequency variation with process and temperature, and control the operation of the auxiliary tuning loop. A 1.2 GHz integer-N synthesizer with 1 MHz reference input Was implemented in a 0.18μm process. The measured results demonstrate that the typical settling time of the synthesizer is less than 3μs,and the phase noise is -108 dBc/Hz@1MHz.The reference spur is -52 dBc.

Bandwidth Design for CMOS Monolithic Photoreceiver

A monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade(RGC) transimpedance amplifier (TIA) is designed. The small signal circuit model of DPD is given and the band width design method of a monolithic photoreceiver is presented. An important factor which limits the bandwidth of DPD detector and the photoreceiver is presented and analyzed in detail. A monolithic photoreceiver with 1.71GHz bandwidth and 49dB transimpedance gain is designed and simulated by applying a low-cost 0. 6um CMOS process and the test result is given.

Relationship between load/unload response ratio and damage variable and its application

The physics-based parameter: load/unload response ratio (LURR) was proposed to measure the proximity of a strong earthquake, which achieved good results in earthquake prediction. As LURR can be used to describe the damage degree of the focal media qualitatively, there must be a relationship between LURR and damage variable (D) which describes damaged materials quantitatively in damage mechanics. Hence, based on damage mechanics and LURR theory, taking Weibull distribution as the probability distribution function, the relationship between LURR and D is set up and analyzed. This relationship directs LURR applied in damage analysis of materials quantitatively from being qualitative earlier, which not only provides the LURR method with a more solid basis in physics, but may also give a new approach to the damage evaluation of big scale structures and prediction of engineering catastrophic failure. Copyright (c) 2009 John Wiley & Sons, Ltd.

Relationship between load/unload response ratio and damage variable and its application

The physics-based parameter: load/unload response ratio (LURR) was proposed to measure the proximity of a strong earthquake, which achieved good results in earthquake prediction. As LURR can be used to describe the damage degree of the focal media qualitatively, there must be a relationship between LURR and damage variable (D) which describes damaged materials quantitatively in damage mechanics. Hence, based on damage mechanics and LURR theory, taking Weibull distribution as the probability distribution function, the relationship between LURR and D is set up and analyzed. This relationship directs LURR applied in damage analysis of materials quantitatively from being qualitative earlier, which not only provides the LURR method with a more solid basis in physics, but may also give a new approach to the damage evaluation of big scale structures and prediction of engineering catastrophic failure. Copyright (c) 2009 John Wiley & Sons, Ltd.

Fiber Bragg Grating Sensor for Strain Sensing in Low Temperature Superconducting Magnet

Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.

Fiber Bragg Grating Sensor for Strain Sensing in Low Temperature Superconducting Magnet

Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.