Structural and relaxor characteristics of Ca0.18Sr0.226Ba0.594Nb2O6

Polycrystalline Ca0.18Sr0.226Ba0.594Nb2O6 (CSBN18) was synthesized via the solid-state reaction route. X-ray structural studies confirmed it belonged to the tetragonal tungsten bronze family. Rietveld refinement of the X-ray data has been carried out for CSBN18 where the atomic positions and site occupancy factors for A-sites have been determined. The dielectric properties of CSBN18 ceramic were studied as a function of temperature in the 100 Hz - 1 MHz frequency range. The dielectric relaxation followed the Vogel-Fulcher relation wherein E-a = 37.4 meV; T-f = 131.5 degrees C and omega(0) = 4.31 x 10(9) rad s(-1). A high pyroelectric coefficient of similar to 250 mu C m(-2).K was obtained around the transition temperature (similar to 150 degrees C). This is significantly higher than that reported for polycrystalline SrxBa1-xNb2O6 (SBN). However, the piezoelectric coefficient (d(33)) of the title composition was as low as 6 pC N-1.

Nonlinear dielectric response of BaBi4Ti4O15 ceramics

Nonlinear dielectric response of BaBi4Ti4O15 ceramics synthesized via the conventional solid-state reaction route has been monitored over a wide range of electric field strengths (E-0 = 0.5 - 5 kV/cm). Dielectric permittivity was found to increase linearly within the range of applied field. Rayleigh relations were employed to interpret the nonlinear dielectric response and the contribution of irreversible domain wall motion to the macroscopic permittivity was separated. The values of room temperature Rayleigh dielectric coefficient (alpha) and relative initial permittivity (epsilon'(init)) were found to be 2.28 +/- 0.02 cm/kV and 146.10 +/- 0.07, respectively. A reasonable agreement between the simulated and measured polarization-electric field (P-E) hysteresis loops was observed at an applied electric field of 5 kV/cm.

Investigation of the origin of glassiness in La0.5Sr0.5CoO3

A comprehensive magnetic study has been carried out on the two sets of La0.5Sr0.5CoO3 samples with a view to understand the origin of low temperature glassiness in the ferromagnetic state. The samples prepared by the conventional solid-state synthesis method show a low temperature shoulder in both dc magnetization as well as in the ac susceptibility measurements, which exhibit characteristics of glassiness such as the frequency dependence and memory effect. These observations suggest the existence of a distinct low temperature cluster-glass like phase within dominant ferromagnetic phase. But, once the same sample is properly homogenized by repeated grinding and annealing process, the low temperature glassy phase disappears, and it shows a pure ferromagnetic behavior. Our comparative study clearly reveals that the reentrant spin-glass like nature is not intrinsic to La0.5Sr0.5CoO3 system, in fact this is an outcome of the compositional inhomogeneity.

Synthesis, structural and optical properties of nanocrystalline Ba2NaNb5O15

Fine powders comprising nanocrystallites of barium sodium niobate, Ba2NaNb5O15 (BNN) were obtained via a citrate assisted sol-gel route at a much lower temperature than that of the conventional solid-state reaction route. The phase evolution of BNN as a function of temperature was investigated by thermogravimetric analysis (TGA), differential thermal analysis (DTA), Fourier transform infrared spectroscopy (FTIR) and X-ray powder diffraction (XRD). DTA data followed by XRD studies confirmed the BNN formation temperature to be around 923 K. The as-synthesized powders heat-treated at 923 K/10 h attained an orthorhombic structure akin to that of the parent BNN phase. Transmission electron microscopy revealed that the nanocrystallites are associated with dislocations. The optical band gap was calculated using the Kubelka-Munk function. These nanocrystallites exhibited strong visible photoluminescence (PL) at room temperature. The PL mechanism was explained by invoking the dielectric confinement effect, defect states and generation of self-trapped excitons.

Effect of the Addition of B2O3 on the Density, Microstructure, Dielectric, Piezoelectric and Ferroelectric Properties of K0.5Na0.5NbO3 Ceramics

Boron oxide (B2O3) addition to pre-reacted K0.5Na0.5NbO3 (KNN) powders facilitated swift densification at relatively low sintering temperatures which was believed to be a key to minimize potassium and sodium loss. The base KNN powder was synthesized via solid-state reaction route. The different amounts (0.1-1 wt%) of B2O3 were-added, and ceramics were sintered at different temperatures and durations to optimize the amount of B2O3 needed to obtain KNN pellets with highest possible density and grain size. The 0.1 wt% B2O3-added KNN ceramics sintered at 1,100 A degrees C for 1 h exhibited higher density (97 %). Scanning electron microscopy studies confirmed an increase in average grain size with increasing B2O3 content at appropriate temperature of sintering and duration. The B2O3-added KNN ceramics exhibited improved dielectric and piezoelectric properties at room temperature. For instance, 0.1 wt% B2O3-added KNN ceramic exhibited d (33) value of 116 pC/N which is much higher than that of pure KNN ceramics. Interestingly, all the B2O3-added (0.1-1 wt%) KNN ceramics exhibited polarization-electric field (P vs. E) hysteresis loops at room temperature. The remnant polarization (P (r)) and coercive field (E (c)) values are dependent on the B2O3 content and crystallite size.

Dielectric relaxation, phase transition and Rietveld studies of perovskite Pb0.94Sr0.06](Mn1/3Sb2/3)(0.05)(Zr0.52Ti0.48)(0.95)]O-3 ceramics

The frequency-dependent dielectric relaxation of Pb0.94Sr0.06](Mn1/3Sb2/3)(0.05)(Zr0.52Ti0.48)(0.95)]O-3 ceramics, synthesized in pure perovskite phase by a solid-state reaction technique is investigated in the temperature range from 303 to 773 K by alternating-current impedance spectroscopy. Using Cole-Cole model, an analysis of the imaginary part of the dielectric permittivity with frequency is performed assuming a distribution of relaxation times. The scaling behavior of the imaginary part of the electric modulus suggests that the relaxation describes the same mechanism at various temperatures. The variation of dielectric constant with temperature is explained considering the space-charge polarization. The SEM indicates that the sample has single phase with an average grain size similar to 14.2 mu m. The material exhibits tetragonal structure. A detailed temperature dependent dielectric study at various frequencies has also been performed. (C) 2013 Elsevier B.V. All rights reserved.

Dielectric relaxation and anti-ferromagnetic coupling of BiEu03 and BiGd03

BiEuO3 (BE) and BiGdO3 (BG) are synthesized by the solid-state reaction technique. Rietveld refinement of the X-ray diffraction data shows that the samples are crystallized in cubic phase at room temperature having Fm3m symmetry with the lattice parameters of 5.4925(2) and 5.4712(2) A for BE and BG, respectively. Raman spectra of the samples are investigated to obtain the phonon modes of the samples. The dielectric properties of the samples are investigated in the frequency range from 42 Hz to 1.1 MHz and in the temperature range from 303 K to 673 K. An analysis of the real and imaginary parts of impedance is performed assuming a distribution of relaxation times as confirmed by the Cole-Cole plots. The frequency-dependent maxima in the loss tangent are found to obey an Arrhenius law with activation energy similar to 1 eV for both the samples. The frequency-dependent electrical data are also analyzed in the framework of conductivity formalism. Magnetization of the samples are measured under the field cooled (EC) and zero field cooled (ZFC) modes in the temperature range from 5 K to 300 K applying a magnetic Field of 500 Oe. The FC and ZFC susceptibilities show that BE is a Van Vleck paramagnetic material with antiferromagnetic coupling at low temperature whereas BG is an anti-ferromagnetic system. The results are substantiated by the M-11 loops of the materials taken at 5 K in the ZFC mode. (C) 2014 Elsevier B.V. All rights reserved

1,9-Pyrazoloanthrone as a Colorimetric and ``Turn-On'' Fluorometric Chemosensor: Structural Implications

A colorimetric and ``turn-on'' fluorescent chemosensor based on 1,9-pyrazoloanthrone specifically for cyanide and fluoride ion detection shows a remarkable solid state reaction when crystals of tetrabutylammonium cyanide and fluoride are brought in physical contact with 1,9-pyrazoloanthrone. X-ray crystal structures of 1,9-pyrazoloanthrone and complexes have been determined, and the ion sensing activity (detection limit of 0.2 and 2 ppb) has been inferred based on spectroscopic and structural features.

Ferroelectric and optical properties of Ba5Li2Ti2Nb8O30 ceramics potential for memory applications

Giant grained (42 mu m) translucent Ba5Li2Ti2Nb8O30 ceramic was fabricated by conventional sintering technique using the powders obtained via solid state reaction route. These samples were confirmed to possess tetragonal tungsten bronze structure (P4bm) at room temperature. The scanning electron microscopy established the average grain size to be close to 20 mu m. The photoluminescence studies carried out on these ceramics indicated sharp emission bands around 433 and 578 nm at an excitation wavelength of 350 nm which were attributed to band-edge emission as the band gap was 2.76 eV determined by Kubelka-Munk function. The dielectric properties of these ceramics were studied over wide frequency range (100-1 MHz) at room temperature. The decrease in dielectric constant with frequency could be explained on the basis of Koops theory. The dielectric constant and the loss were found to decrease with increasing frequency. The Curie temperature was confirmed to be similar to 370 A degrees C based on the dielectric anomaly observed when these measurements were carried out over a temperature range of 30-500 A degrees C. This shows a deviation from Curie-Weiss behaviour and hence an indicator of the occurrence of disordering in the system, the gamma = 1.23 which confirms the diffuse ferroelectric transition. These ceramics at room temperature exhibited P-E hysteresis loops, though not well saturated akin to that of their single crystalline counterparts. These are the suitable properties for ferroelectric random access memory applications.

Relaxor behaviour in BaBi4Ti4O15 ceramics fabricated using the powders obtained by mechanochemically assisted synthesis route

Mechanochemically activated reactants were found to facilitate the synthesis of fine powders comprising 200-400 nm range crystallites of BaBi4Ti4O15 at a significantly lower temperature (700 A degrees C) than that of solid-state reaction route. Reactants (CaCO3, Bi2O3 and TiO2) in stoichiometric ratio were ball milled for 48 h to obtain homogeneous mixture. The evolution of the BaBi4Ti4O15 phase was systematically followed using X-ray powder diffraction (XRD) technique. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to probe its structural and microstructural details. The electron diffraction studies established the presence of correlated octahedral rotations and associated long-range polar ordering. High-resolution TEM imaging nevertheless revealed structural inhomogeneities leading to intergrowth defects. Dense BaBi4Ti4O15 ceramics with an average grain size of 0.9 mu m were fabricated using mechanochemically assisted synthesized powders at relatively low temperature (1000 A degrees C). The effect of grain size on the dielectric and relaxor behaviour of BaBi4Ti4O15 ceramics was investigated. Fine-grained ceramics (average grain size similar to 0.9 mu m) showed higher diffusion in phase transition, lower temperature of phase transition, lower Vogel-Fulcher freezing temperature and higher activation energy for the polarization reversal than those for coarse-grained ceramics (average grain size similar to 7 mu m) fabricated via the conventional solid-state reaction route.

High Temperature XRD of Cu2GeSe3

The Cu2GeSe3 is prepared by solid state synthesis method. The high temperature XRD has been done at different temperature from 30 degrees C to 450 degrees C. The reitveld refinement confirms Cu2GeSe3 phase and orthorhombic crystal structure. The lattice constants are increasing with increase in the temperature and their rate of increase with respect to temperature are used for finding the thermal expansion coefficient. The calculation of the linear and volume coefficient of thermal expansion is done from 30 degrees C to 400 degrees C. Decrease in the values of linear expansion coefficients with temperature are observed along a and c axis. Since thermal expansion coefficient is the consequence of the distortion of atoms in the lattice; this can be further used to find the minimum lattice thermal conductivity at given temperature.

Origin of giant dielectric constant and conductivity behavior in Zn1-xMgxO (0 <= x <= 0.1) ceramics

Zn1-xMgxO ( <= x <= 0.1) ceramics were fabricated by conventional solid-state reaction of co-precipitated zinc oxide and magnesium hydroxide nanoparticles. Structural and morphological properties of the fabricated ceramics were studied using X-ray diffraction and scanning electron microscopic analysis. The dielectric measurements of the ceramics were carried out as a function of frequency and temperature respectively. Interestingly, Mg doped ZnO (MZO) samples exhibited colossal dielectric response (similar to 1 x 10(4) at 1 kHz) with Debye like relaxation. The detailed dielectric studies and thermal analyses showed that the unusual dielectric response of the samples were originated from the defected grain and grain boundary (GB) conductivity relaxations due to the absorbed atmospheric water vapor (moisture). Impedance spectroscopy was employed to determine the defected grain and GB resistances, capacitances and which supported Maxwell-Wagner type relaxation phenomena. (C) 2015 Elsevier Ltd. All rights reserved.

Red-emitting LaOF:Eu3+ phosphors: Synthesis, structure and their Judd-Ofelt analysis for LED applications

In the present study, we have synthesized a series of La1-xEuxOF (0.01 <= x <= 0.09) phosphors by the conventional solid-state reaction route at relatively low temperature (500 degrees C) and shorter duration of 2 h. The compounds were crystallized in the rhombohedral structure with the space group R-3m (No. 166). Upon UV excitation (254 nm), the photoluminescence spectra exhibit characteristic luminescence D-5(0) -> F-7(J) (J= 1, 2, 3, and 4) intra-4f shell Eu3+ ion transitions. An intense red emission peak at 610 nm was observed due to electric dipole (D-5(0) -> F-7(2)) transition. Judd-Ofelt theory was employed to evaluate various radiative parameters such as radiative emission rates, lifetime, branching and asymmetry ratios. CIE color coordinates confirmed the red emission of the phosphors. The luminescent results reveal that LaOF:Eu3+ phosphor can be used as potential candidate for developing red component in white LED applications. (C) 2015 Elsevier Ltd. All rights reserved.

Thermoelectric Properties of In-Doped Cu2ZnGeSe4

Recently, much research has been focused on finding new thermoelectric materials. Cu-based quaternary chalcogenides that belong to A(2)BCD(4) (A = Cu; B = Zn, Cd; C = Sn, Ge; D = S, Se, Te) are wide band gap materials and one of the potential thermoelectric materials due to their complex crystal structures. In this study, In-doped quaternary compounds Cu2ZnGe1-xInxSe4 (x = 0, 0.025, 0.05, 0.075, 0.1) were prepared by a solid state synthesis method. Powder x-ray diffraction patterns of all the samples showed a tetragonal crystal structure (space group I-42m) of the main phase with a trace amount of impurity phases, which was further confirmed by Rietveld analysis. The elemental composition of all the samples showed a slight deviation from the nominal composition with the presence of secondary phases. All the transport properties were measured in the temperature range 373-673 K. The electrical resistivity of all the samples initially decreased up to similar to 470 K and then increased with increase in temperature upto 673 K, indicating the transition from semiconducting to metallic behavior. Positive Seebeck coefficients for all the samples revealed that holes are the majority carriers in the entire temperature range. The substitution of In3+ on Ge4+ introduces holes and results in the decrease of resistivity as well as the Seebeck coefficient, thereby leading to the optimization of the power factor. The lattice thermal conductivity of all the samples decreased with increasing temperature, indicating the presence of phonon-phonon scattering. As a result, the thermoelectric figure of merit (zT) of the doped sample showed an increase as compared to the undoped compound.

Yb:Y2O2S的粉体制备和光谱性质

通过助熔剂固相反应法制备了5%Yb掺杂的硫氧化钇(Y2O2S)粉体。通过对其漫反射光谱和荧光光谱的测量，估算得Yb3+离子在Y2O2S晶格中的晶场分裂。由光谱数据计算得Yb3+离子的2F7/2能级在Y2O2S中的分裂值为709cm-1，适合于Yb3+离子的准三能级的激光运转。由5％Yb：Y2O2S的发射光谱拟合得出其峰位，峰高及峰宽。为了比较，相关的5％Yb：YAG的数据也被给出。