The effect of elevated temperature on the wear of stainless steel in contact with tungsten carbide

The bearings in the air motors of modern jet aircraft engines must operate dry in hostile conditions at temperatures up to 500° C, where the thrust races in the actuators operate at temperatures up to 300° C. One of the few metallurgical combinations which can function efficiently under these conditions is martensitic stainless steel on tungsten carbide. The work described was initiated to isolate the wear mechanisms of two such steels in contact with tungsten carbide at temperatures up to 500° C. Experiments were carried out on angular contact bearings similar to these used in service, where both rolling and sliding is present and also for pure sliding conditions using a pin-on-disc apparatus. Wear measurements of the bearings were obtained with wear rates, friction and surface temperatures from the pin-on-disc machine for a series of loads and speeds. Extensive X-ray diffraction analysis was carried out on the wear debris, with also S.E.M. analysis and hardness tests on the worn surfaces along with profilometry measurements of the disc. The oxidational parameters of the steel were obtained from measurements of oxide growth rates by ellipsometry. Three distinct mechanisms of wear were established and the latter two were found to be present in both configurations. These involve an oxidational-abrasive mechanism at loads below 40 N with pin surface temperatures up to about 300 °C, with the mechanism changing to severe wear for higher loads. As the temperature increases a third wear mechanism appears due to transfer of relatively soft oxide films to the steel surface reducing the wear rate. Theoretical K factors were derived and compared with experimental values which were found to be in good agreement for the severe wear mechanism. The pin-on-disc experiments may be useful as a screening test for material selection, without the considerable cost of producing the angular contact bearings.

A study of the electrical and optical properties of unhydrogenated neon-sputtered amorphous silicon

Films of amorphous silicon (a-Si) were prepared by r.f. sputtering in a Ne plasma without the addition of hydrogen or a halogen. The d.c. dark electrical conductivity, he optical gap and the photoconductivity of the films were investigated for a range of preparation conditions, the sputtering gas pressure, P, the target-substrate spacing, d, the self-bias voltage, Vsb, on the target and the substrate temperature, Ts. The dependence of the electrical and optical properties on these conditions showed that various combinations of P, d and Vsb, at a constant Ts, giving the same product (Pd/V sb) result in films with similar properties, provided that P, d and Vsb remain vithin a certain range. Variation of Pd/Vsb between about 0.2 and 0.8 rrTorr.cm!V varied the dark conductivity over about 4 orders of magnitude, the optical gap by 0.5 eV and the photoconductivity over 4-5 orders of magnitude. This is attributed to controlling the density-of-states distribution in the mobility gap. The temperature-dependence of photoconductivity and the photoresponse of undoped films are in support of this conclusion. Films prepared at relatively high (Pd/Vsb) values and Ts=300 ºc: exhibited low dark-conductivity and high thermal activation energy, optical gap and photoresponse, characteristic properties of a 'low density-of-states material. P-type doping with group-Ill elements (Al, B and Ga) by sputtering from a composite target or from a predoped target (B-.doped) was investigated. The systematic variation of room-temperature conductivity over many orders of magnitude and a Fermi-level shift of about 0.7 eV towards the valence-band edge suggest that substitutional doping had taken place. The effects of preparation conditions on doping efficiency were also investigated. The post-deposition annealing of undoped and doped films were studied for a temperature range from 250 ºC to 470 ºC. It was shown that annealing enhanced the doping efficiency considerably, although it had little effect on the basic material (a-Si) prepared at the optimum conditions (Pd/Vsb=0.8 mTorr.cm/V and Ts=300 $ºC). Preliminary experiments on devices imply potential applications of the present material, such as p-n and MS junctions.

Control of soundness and mechanical properties in aluminium-silicon-magnesium alloys

Previously, specifications for mechanical properties of casting alloys were based on separately cast test bars. This practice provided consistently reproducible results; thus, any change in conditions was reflected in changes in the mechanical properties of the test coupons. These test specimens, however, did not necessarily reflect the actual mechanical properties of the castings they were supposed to represent'. Factors such as section thickness and casting configuration affect the solidification rate and soundness of the casting thereby raising or lowering its mechanical properties in comparison with separately cast test specimens. In the work now reported, casting shapes were developed to investigate the variations of section thickness, chemical analysis and heat treatment on the mechanical properties of a high strength Aluminium alloy under varying chilling conditions. In addition, an insight was sought into the behaviour of chills under more practical conditions. Finally, it was demonstrated that additional information could be derived from the radiographs which form an essential part of the quality control of premium quality castings. As a result of the work, it is now possible to select analysis and chilling conditions to optimize the as cast and the heat treated mechanical properties of Aluminum 7% Silicon 0.3% Magnesium alloy.

Enhanced carrier-carrier interaction in optically pumped hydrogenated nanocrystalline silicon

A femtosecond pump-probe setup was used to measure the time resolved reflectivity of hydrogenated amorphous silicon containing crystalline silicon nanoparticles at eight different incidence angles. Results fitted with the Drude model found a scattering rate of G = 2-1+1.2×1015?s-1 at a corresponding carrier concentration of ~ 1020?cm-3. The observed scattering rate is attributed to enhanced carrier-carrier interaction in optically pumped nanocrystals.

In situ catalytic upgrading of bio-oil using supported molybdenum carbide

The aim of this work is to improve some of the less desirable properties of bio-oil via the catalytic fast pyrolysis of sugarcane bagasse using a novel supported molybdenum carbide (20 wt.% MoC/AlO ) catalyst. Proximate and elemental analysis of the bagasse were carried out to determine the moisture, ash, carbon, hydrogen, nitrogen and oxygen content. The ground pellets were classified in sieves to a size range of 0.25-1 mm and were pyrolysed in a 300 g h fluidised bed reactor at 500 C. MoC/AlO replaced the sand in the fluidised bed reactor in different proportions (0 wt.%, 12 wt.%, 25 wt.% and 50 wt.%) to investigate the effect of this catalyst on the pyrolysis products. Bio-oil yield results showed that ground sugarcane bagasse pellets gave high organic yields in the bio-oil of 60.5 wt.% on dry feed with a total liquid yield of 73.1 wt.% on dry feed without catalyst. Increasing the catalyst proportions in the fluidised bed reduced bio-oil yields, significantly reduced sugars (as a-levoglucosan) concentration and increased furanics and phenolics concentration in the bio-oil. It was observed that the higher the concentration of the 20 wt.% MoC/AlO catalyst in the fluidised bed the lower the viscosity of the bio-oil. © 2013 Elsevier B.V. All rights reserved.

Microsegregation in nodular cast iron and its effect on mechanical properties

A review of the literature pertaining to the mechanical properties, solidification and segregation effects in nodular cast iron has been made. A series of investigations concerning the influence of microsegregation on mechanical properties of :pearlitic, ferritic and austenitic nodular cast iron have then been reported. The influence of section size on the tensile and impact properties of cornmercial purity and refined ferritic nodular cast iron has been studied. It has been shown. that an increase in section caused a decrease in impact transition temperature of the commercial purity material without greatly affecting the impact transition temperature of the purer material. This effect has been related to increased amounts of segregation effects such as cell boundary carbides in heavier sections of the commercial purity material. Microsegregation studies on the materials used in this thesis have been carried out using an electron probe microanalyser. This technique has shown that concentrations of chromium and manganese and depletions of nickel and silicon occurred at eutectic cell boundaries in nodular cast iron and were often associated with brittle carbides in these areas. These effects have been shown to be more prevalent in heavier sections. The nature of segregation during the solidification of nodular cast iron has been studied by quenching samples of nodular iron during the solidification process. Micro-analysis of such samples has shown that segregation of manganese and chromium occurs by a gradual build-up of these elements at the solid/liquid interface. The microstructures of the quenched specimens revealed carbide filaments connecting graphite nodules and areas of quenched liquid. These filaments have been used as evidence for a revised hypothesis for the solidification of nodular cast iron by a liquid diffusion mechanism. A similar series of experiments has been carried out on two high nickel austenitic irons containing 0.5 per cent manganese and 4 per cent manganese respectively. In both these materials a decrease in elongation was experienced with increasing section. This effect was more drastic in the 4 per cent manganese material which also contained much greater amounts of cell boundary carbide in heavy sections. Micro-analysis of samples of the 4 per cent manganese material quenched during solidification revealed that manganese concentrated in the liquid and that nickel concentrated in the solid during solidification. No segregation of silicon occurred in this material. Carbide filaments appeared in the microstructures of these specimens. A discussion of all the above effects in terms of current concepts is included.

The formation and properties of some cyclic compounds of silicon an dtin

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Feasibility of automating the production of carbide-tipped milling cutters

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Study of epitaxial silicon layers with reference to the technology of semi-conductor devices

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Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.

Controlled growth of poly(2-(diethylamino)ethyl methacrylate) brushes via atom transfer radical polymerisation on planar silicon surfaces

Progress in making pH-responsive polyelectrolyte brushes with a range of different grafting densities is reported. Polymer brushes of poly(2-(diethylamino)ethyl methacrylate) were synthesised via atom transfer radical polymerisation on silicon wafers using a 'grafted from' approach. The [11-(2-bromo-2-methyl) propionyloxy]undecyl trichlorosilane initiator was covalently attached to the silicon via silylation, from which the brushes were grown using a catalytic system of copper(I) chloride and pentamethyldiethylenetriamine in tetrahydrofuran at 80°C. X-ray reflectivity was used to assess the initiator surfaces and an upper limit on the grafting density of the polymer was determined. The quality of the brushes produced was analysed using ellipsometry and atomic force microscopy, which is also discussed.

Investigation of an optically reconfigurable plasma for silicon based microwave applications

This paper investigates the use of photoconductive plasmas for controlling microwave circuits and antennas on semiconductor substrates. Initial experiments show that significant changes in the reflection coefficient characteristics can be obtained by varying the length of a photo-illuminated plasma region from 0 to 2mm. The resulting structure forms the basis for further experiments involving tuneable microwave devices. © 2013 European Microwave Association.

Stress-induced platelet formation in silicon:a molecular dynamics study

The effect of stress on vacancy cluster configurations in silicon is examined using molecular dynamics. At zero pressure, the shape and stability of the vacancy clusters agrees with previous atomistic results. When stress is applied the orientation of small planar clusters changes to reduce the strain energy. The preferred orientation for the vacancy clusters under stress agrees with the experimentally observed orientations of hydrogen platelets in the high stress regions of hydrogen implanted silicon. These results suggest a theory for hydrogen platelet formation. © 2005 The American Physical Society.