Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds

Investigations on thin films that started decades back due to scientific curiosity in the properties of a two-dimensional solid, has developed into a leading research field in recent years due to the ever expanding applications of the thin films in the fann of a variety of active and passive microminiaturized components and devices, solar cells, radiation sowces and detectors, magnetic memory devices, interference filters, refection and antireflection coatings etc. [1]. The recent environment and energy resource concerns have aroused an enonnous interest in the study of materials in thin film form suitable for renewable energy sources such as photovoltaic devices. Recognition of the immense potential applications of the chalcopyrites that can fonn homojunctions or heterojunctions for solar cell fabrication has attracted many researchers to extensive and intense research on them. In this thesis, we have started with studies performed on CuInSe, thin films, a technologically well recognized compound belonging to the l•ill-VI family of semiconductors and have riveted on investigations on the preparation and characterization of compoWlds Culn3Se5. Culn5Seg and CuIn7Se12, an interesting group of compounds related to CuInSe2 called Ordered Vacancy Compounds, having promising applications in photovoltaic devices. A pioneering work attempted on preparing and characterizing the compound Culn7Sel2 is detailed in the chapters on OVC's. Investigation on valence band splitting in avc's have also been attempted for the first time and included as the last chapter in the thesis. Some of the salient features of the chalcopyrite c.ompounds are given in the next section .of this introductory chapter.

Studies On The Electrical Properties Of Some Crystalline Organic Compounds And Conducting Polymers

Solid electrolytes for applications like chemical sensing, energy storage, and conversion have been actively investigated and developed since the early sixties. Although of immense potential, solid state protonic conductors have been ignored in comparison with the great interest that has been shown to other ionic conductors like lithium and silver ion conductors. The non-availability of good, stable protonic conductors could be partly the reason for this situation. Although organic solids are better known for their electrical insulating character, ionic conductors of organic origin constitute a recent addition to the class of ionic conductors. However, detailed studies (N1 such conductors are scarce. Also the last decade has witnessed an unprecedented boom in research on organic "conducting polymers". These newly devised materials show conductivity spanning from insulator to metallic regimes, which can be manipulated by appropriate chemical treatment. They find applications in devices ranging from rechargeable batteries to "smart windows". This thesis mainly deals with the synthesis and investigations on the electrical properties of (i) certain organbc protonic conductors derived from ethylenediamine and (ii) substituted polyanilines

“Investigations on Vibrational Overtones in the NIR region and Laser Induced Fluorescence in some selected compounds”

The central theme of this research concerns the study of vibrationally excited molecules. We have used the local mode description of such vibrational states, and this -model has now gained general acceptance. A central feature of the model is the Wloealizafion of vibrational energy. A study of these high—energy localized states provides example, becauseof this localization, overtone spectra, which measure the absorption of T vibrational energy, are extremely sensitive to the properties of X-H bonds. We also use -overtone spectra to study the conformation of molecules, i.e., the relative internal orientation of their bonds. The thesis comprises six chapters

" Studies on Laser induced Phatothermal Phenomena in Selected Organic Compounds and Fullerenes"

In the pre—laser era it was difficult to believe that the optical properties of a medium depend upon the intensity of the radiation incident on it. The basis for this conclusion is that the electric field strength associated with the conventional light sources used before the advent of lasers was much smaller than (103 V/cm) the field sttrengths of atomic or interatomic fields (2 107 —- 10” V/cm). The radiation with such low intensity is not able to affect atomic fields to the extent of changing optical parameters. The invention of laser in 1960 was a turning point. The high degree of coherence of the laser radiation provides high spatial concentration of optical power. With the availability of the femtosecond lasers it has become possible to get extremely high peak powers 2 1013 W/cmz). At such high fields, the relationship between electric ‘polarization P and the electric field strength E ceases to be linear and several nonlinear effects begin to occur. Nonlinear absorption, a branch of nonlinear optics, refers to the interaction between radiation and matter accompanied by absorption of more than one photon. Nonlinear absorption has acquired great importance after the invention of high power lasers. One of the objectives of the present work is to investigate the nonlinear absorption processes occurring in fullerene, selected organic solvents and laser dyes. Fullerenes and laser dyes were chosen because of their highly nonlinear behaviour. Fullerenes, the most beautiful among molecules, offer fascinating field of research owinglto their significant structural properties. As toluene, benzene and carbon disulphide are themost widely used solvents for fullerenes, it seems important to study the nonlinear properties of these liquids as well. Like fullerenes, laser dyes also possess highly delocalized 7r electrons which are responsible for their nonlinear absorption. Dye lasers were the fulfillment of an experimenter’s pipe dream - to have a laser that is easily tunable over a wide range of wavelengths. A better understandingof the photophysical properties of laser dyes can significantly enhance the development and technology of dye lasers. We studied the nonlinear absorption properties of two rhodamine dyes to have some insight into their nonlinear optical properties.

Development of p-type transparent semiconducting oxides for thin film transistor applications

Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One of the relevant fields of current interest in material science is the fundamental aspects and applications of semi- conducting transparent thin films. Transparent conductors show the properties of transparency and conductivity simultaneously. As far as the band structure is concerned, the combination of the these two properties in the same material is contradictory. Generally a trans- parent material is an insulator having completely filled valence and empty conduction bands. Metallic conductivity come out when the Fermi level lies within a band with a large density of states to provide high carrier concentration. Effective transparent conductors must nec- essarily represent a compromise between a better transmission within the visible spectral range and a controlled but useful electrical con- ductivity [1–6]. Generally oxides like In2O3, SnO2, ZnO, CdO etc, show such a combination. These materials without any doping are insulators with optical band gap of about 3 eV. To become a trans- parent conductor, these materials must be degenerately doped to lift the Fermi level up into the conduction band. Degenerate doping pro- vides high mobility of extra carriers and low optical absorption. The increase in conductivity involves an increase in either carrier concen- tration or mobility. Increase in carrier concentration will enhance the absorption in the visible region while increase in mobility has no re- verse effect on optical properties. Therefore the focus of research for new transparent conducting oxide (TCO) materials is on developing materials with higher carrier mobilities.

Using Neural Network Classifier Support Vector Machine Regression for the prediction of Melting Point of Drug – like compounds

In our study we use a kernel based classification technique, Support Vector Machine Regression for predicting the Melting Point of Drug – like compounds in terms of Topological Descriptors, Topological Charge Indices, Connectivity Indices and 2D Auto Correlations. The Machine Learning model was designed, trained and tested using a dataset of 100 compounds and it was found that an SVMReg model with RBF Kernel could predict the Melting Point with a mean absolute error 15.5854 and Root Mean Squared Error 19.7576

Air-gap based vertical cavity micro-opto-electro-mechanical Fabry-Perot filters

Mikrooptische Filter sind heutzutage in vielen Bereichen in der Telekommunikation unersetzlich. Wichtige Einsatzgebiete sind aber auch spektroskopische Systeme in der Medizin-, Prozess- und Umwelttechnik. Diese Arbeit befasst sich mit der Technologieentwicklung und Herstellung von luftspaltbasierenden, vertikal auf einem Substrat angeordneten, oberflächenmikromechanisch hergestellten Fabry-Perot-Filtern. Es werden zwei verschiedene Filtervarianten, basierend auf zwei verschiedenen Materialsystemen, ausführlich untersucht. Zum einen handelt es sich dabei um die Weiterentwicklung von kontinuierlich mikromechanisch durchstimmbaren InP / Luftspaltfiltern; zum anderen werden neuartige, kostengünstige Siliziumnitrid / Luftspaltfilter wissenschaftlich behandelt. Der Inhalt der Arbeit ist so gegliedert, dass nach einer Einleitung mit Vergleichen zu Arbeiten und Ergebnissen anderer Forschergruppen weltweit, zunächst einige theoretische Grundlagen zur Berechnung der spektralen Reflektivität und Transmission von beliebigen optischen Schichtanordnungen aufgezeigt werden. Auß erdem wird ein kurzer theoretischer Ü berblick zu wichtigen Eigenschaften von Fabry-Perot-Filtern sowie der Möglichkeit einer mikromechanischen Durchstimmbarkeit gegeben. Daran anschließ end folgt ein Kapitel, welches sich den grundlegenden technologischen Aspekten der Herstellung von luftspaltbasierenden Filtern widmet. Es wird ein Zusammenhang zu wichtigen Referenzarbeiten hergestellt, auf denen diverse Weiterentwicklungen dieser Arbeit basieren. Die beiden folgenden Kapitel erläutern dann ausführlich das Design, die Herstellung und die Charakterisierung der beiden oben erwähnten Filtervarianten. Abgesehen von der vorangehenden Epitaxie von InP / GaInAs Schichten, ist die Herstellung der InP / Luftspaltfilter komplett im Institut durchgeführt worden. Die Herstellungsschritte sind ausführlich in der Arbeit erläutert, wobei ein Schwerpunktthema das trockenchemische Ä tzen von InP sowie GaInAs, welches als Opferschichtmaterial für die Herstellung der Luftspalte genutzt wurde, behandelt. Im Verlauf der wissenschaftlichen Arbeit konnten sehr wichtige technische Verbesserungen entwickelt und eingesetzt werden, welche zu einer effizienteren technologischen Herstellung der Filter führten und in der vorliegenden Niederschrift ausführlich dokumentiert sind. Die hergestellten, für einen Einsatz in der optischen Telekommunikation entworfenen, elektrostatisch aktuierbaren Filter sind aus zwei luftspaltbasierenden Braggspiegeln aufgebaut, welche wiederum jeweils 3 InP-Schichten von (je nach Design) 357nm bzw. 367nm Dicke aufweisen. Die Filter bestehen aus im definierten Abstand parallel übereinander angeordneten Membranen, die über Verbindungsbrücken unterschiedlicher Anzahl und Länge an Haltepfosten befestigt sind. Da die mit 357nm bzw. 367nm vergleichsweise sehr dünnen Schichten freitragende Konstrukte mit bis zu 140 nm Länge bilden, aber trotzdem Positionsgenauigkeiten im nm-Bereich einhalten müssen, handelt es sich hierbei um sehr anspruchsvolle mikromechanische Bauelemente. Um den Einfluss der zahlreichen geometrischen Strukturparameter studieren zu können, wurden verschiedene laterale Filterdesigns implementiert. Mit den realisierten Filter konnte ein enorm weiter spektraler Abstimmbereich erzielt werden. Je nach lateralem Design wurden internationale Bestwerte für durchstimmbare Fabry-Perot-Filter von mehr als 140nm erreicht. Die Abstimmung konnte dabei kontinuierlich mit einer angelegten Spannung von nur wenigen Volt durchgeführt werden. Im Vergleich zu früher berichteten Ergebnissen konnten damit sowohl die Wellenlängenabstimmung als auch die dafür benötigte Abstimmungsspannung signifikant verbessert werden. Durch den hohen Brechungsindexkontrast und die geringe Schichtdicke zeigen die Filter ein vorteilhaftes, extrem weites Stopband in der Größ enordnung um 550nm. Die gewählten, sehr kurzen Kavitätslängen ermöglichen einen freien Spektralbereich des Filters welcher ebenfalls in diesen Größ enordnungen liegt, so dass ein weiter spektraler Einsatzbereich ermöglicht wird. Während der Arbeit zeigte sich, dass Verspannungen in den freitragenden InPSchichten die Funktionsweise der mikrooptischen Filter stark beeinflussen bzw. behindern. Insbesondere eine Unterätzung der Haltepfosten und die daraus resultierende Verbiegung der Ecken an denen sich die Verbindungsbrücken befinden, führte zu enormen vertikalen Membranverschiebungen, welche die Filtereigenschaften verändern. Um optimale Ergebnisse zu erreichen, muss eine weitere Verbesserung der Epitaxie erfolgen. Jedoch konnten durch den zusätzlichen Einsatz einer speziellen Schutzmaske die Unterätzung der Haltepfosten und damit starke vertikale Verformungen reduziert werden. Die aus der Verspannung resultierenden Verformungen und die Reaktion einzelner freistehender InP Schichten auf eine angelegte Gleich- oder Wechselspannung wurde detailliert untersucht. Mittels Weisslichtinterferometrie wurden lateral identische Strukturen verglichen, die aus unterschiedlich dicken InP-Schichten (357nm bzw. 1065nm) bestehen. Einen weiteren Hauptteil der Arbeit stellen Siliziumnitrid / Luftspaltfilter dar, welche auf einem neuen, im Rahmen dieser Dissertation entwickelten, technologischen Ansatz basieren. Die Filter bestehen aus zwei Braggspiegeln, die jeweils aus fünf 590nm dicken, freistehenden Siliziumnitridschichten aufgebaut sind und einem Abstand von 390nm untereinander aufweisen. Die Filter wurden auf Glassubstraten hergestellt. Der Herstellungsprozess ist jedoch auch mit vielen anderen Materialien oder Prozessen kompatibel, so dass z.B. eine Integration mit anderen Bauelemente relativ leicht möglich ist. Die Prozesse dieser ebenfalls oberflächenmikromechanisch hergestellten Filter wurden konsequent auf niedrige Herstellungskosten optimiert. Als Opferschichtmaterial wurde hier amorph abgeschiedenes Silizium verwendet. Der Herstellungsprozess beinhaltet die Abscheidung verspannungsoptimierter Schichten (Silizium und Siliziumnitrid) mittels PECVD, die laterale Strukturierung per reaktiven Ionenätzen mit den Gasen SF6 / CHF3 / Ar sowie Fotolack als Maske, die nasschemische Unterätzung der Opferschichten mittels KOH und das Kritisch-Punkt-Trocken der Proben. Die Ergebnisse der optischen Charakterisierung der Filter zeigen eine hohe Ü bereinstimmung zwischen den experimentell ermittelten Daten und den korrespondierenden theoretischen Modellrechnungen. Weisslichtinterferometermessungen der freigeätzten Strukturen zeigen ebene Filterschichten und bestätigen die hohe vertikale Positioniergenauigkeit, die mit diesem technologischen Ansatz erreicht werden kann.

Prediction of some thermodynamic properties of selected compounds of element 104

A set of parametrized equations has been published by Bratsch and Lagowski for calculating thermodynamic properties of the lanthanides, actinides, element 104, and certainrelated elements. Since these equations were applied to element 104, new values for the first four ionization energies and radii of the ions of charge +1, +2, +3, and +4 have been calculated for this element. The parametrized equations are used here with these new values to calculate some thermodynamic properties of element 104.

Observation of two-electron-one-photon transitions in silicon

We report on the observation of K\alpha\alpha X-rays of Si, produced in collisions of 15-28 MeV Si projectiles with various target atoms in the range Z =6 to 29. Energy shifts of X-rays were measured and are compared with theoretical predictions. Cross section ratios for emission of K\alpha\alpha and K\alpha radiation are given.

Synthesis of N-amino compounds and C2 symmetric N-amino compounds and transformation into aziridines using olefins

Aziridine, Stickstoffanaloga der Epoxide, können regio- und stereoselektive Ringöffnungsreaktionen eingehen, wodurch ihnen als „building blocks“ in der Organischen Synthese eine große Bedeutung zukommt. In dieser Arbeit wurden unterschiedliche N-Aminoverbindungen synthetisiert sowie die Anwendungsmöglichkeit dieser Hydrazinderivate als Stickstoffquellen in Aziridinierungen von Olefinen untersucht. In der vorliegenden Dissertation wurde eine neue Methode zur Darstellung von N-Aminosuccinimid entwickelt und die Einsatzmöglichkeit als Stickstoffquelle in Aziridinierungsreaktionen in einer Reihe von Umsetzungen mit funktionalisierten ebenso wie mit nicht-funktionalisierten Olefinen demonstriert. Die ableitbaren Aziridine wurden hierbei in Ausbeuten von bis zu 80 % erhalten. In der Aziridinierungsreaktion von N-Aminosuccinimid mit 4,7-Dihydro-2-isopropyl-1,3-dioxepin resultieren bicyclische Aziridinierungsprodukte, die als endo/exo-Isomere in einem 1:1-Verhältnis anfallen. Es ist in dieser Arbeit gelungen, die Isomere in guten Ausbeuten zu erhalten, sie säulenchromatographisch zu trennen und ihre Konfiguration im festen Zustand mittels Kristallstrukturanalyse eindeutig zu bestimmen. Enantiomerenangereicherte Olefine, wie z. B. in 2-Position alkylsubstituierte 5-Methyl-4H-1,3-dioxine mit Enantiomerenüberschüssen von 92% ee liefern in der Aziridinierung mit N-Aminosuccinimid und Iodosylbenzol ein 4-Methyl-1,3-oxazolidin-4-carbaldehydderivat in einer zweistufigen Reaktion- der Aziridinierung und einer Umlagerung- ein 4-Methyl-1,3-oxazolidin-4-carbaldehydderivat. Für die Diastereoselektivität des Aziridinierungsschrittes wurde 65 % de bestimmt. In einer neuen Synthese über zwei Stufen ausgehend von (+)-3,4-Dimethoxysuccinanhydrid konnte ein chiraler Stickstoffüberträger - (+)-N-Amino-3,4-dimethoxysuccinimid - in Ausbeuten bis zu 86 % synthetisiert. Die Umsetzung dieser optisch aktiven Stickstoffquelle mit einer Vielzahl prochiraler Alkene führt zu diastereomeren Aziridinen in Ausbeuten bis zu 65% und Diastereoselektivitäten von bis zu 66% de. Anhand ausgewählter Verbindungen konnten die Absolutkonfigurationen der Reaktionsprodukte mittels Kristallstrukturanalyse eindeutig geklärt werden.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Squeezed thermal phonons precurse nonthermal melting of silicon as a function of fluence

A femtosecond-laser pulse can induce ultrafast nonthermal melting of various materials along pathways that are inaccessible under thermodynamic conditions, but it is not known whether there is any structural modification at fluences just below the melting threshold. Here, we show for silicon that in this regime the room-temperature phonons become thermally squeezed, which is a process that has not been reported before in this material. We find that the origin of this effect is the sudden femtosecond-laser-induced softening of interatomic bonds, which can also be described in terms of a modification of the potential energy surface. We further find in ab initio molecular-dynamics simulations on laser-excited potential energy surfaces that the atoms move in the same directions during the first stages of nonthermal melting and thermal phonon squeezing. Our results demonstrate how femtosecond-laser-induced coherent fluctuations precurse complete atomic disordering as a function of fluence. The common underlying bond-softening mechanism indicates that this relation between thermal squeezing and nonthermal melting is not material specific.

Optical amplification and stability of spiroquaterphenyl compounds and blends

In this contribution, we present a systematic investigation on a series of spiroquaterphenyl compounds optimised for solid state lasing in the near ultraviolet (UV). Amplified spontaneous emission (ASE) thresholds in the order of 1 μJ/cm2 are obtained in neat (undiluted) films and blends, with emission peaks at 390 1 nm for unsubstituted and meta-substituted quaterphenyls and 400 4 nm for para-ether substituted quaterphenyls. Mixing with a transparent matrix retains a low threshold, shifts the emission to lower wavelengths and allows a better access to modes having their intensity maximum deeper in the film. Chemical design and blending allow an independent tuning of optical and processing properties such as the glass transition.

A pilot investigation of the relationship between climate variability and milk compounds under the bootstrap technique

This study analyzes the linear relationship between climate variables and milk components in Iran by applying bootstrapping to include and assess the uncertainty. The climate parameters, Temperature Humidity Index (THI) and Equivalent Temperature Index (ETI) are computed from the NASA-Modern Era Retrospective-Analysis for Research and Applications (NASA-MERRA) reanalysis (2002–2010). Milk data for fat, protein (measured on fresh matter bases), and milk yield are taken from 936,227 milk records for the same period, using cows fed by natural pasture from April to September. Confidence intervals for the regression model are calculated using the bootstrap technique. This method is applied to the original times series, generating statistically equivalent surrogate samples. As a result, despite the short time data and the related uncertainties, an interesting behavior of the relationships between milk compound and the climate parameters is visible. During spring only, a weak dependency of milk yield and climate variations is obvious, while fat and protein concentrations show reasonable correlations. In summer, milk yield shows a similar level of relationship with ETI, but not with temperature and THI. We suggest this methodology for studies in the field of the impacts of climate change and agriculture, also environment and food with short-term data.