Natural convection in metal foams with open cells

This paper presents a combined experimental and numerical study on natural convection in open-celled metal foams. The effective thermal conductivities of steel alloy (FeCrAlY) samples with different relative densities and cell sizes are measured with the guarded-hot-plate method. To examine the natural convection effect, the measurements are conducted under both vacuum and ambient conditions for a range of temperatures. The experimental results show that natural convection is very significant, accounting for up to 50% of the effective foam conductivity obtained at ambient pressure. This has been attributed to the high porosity (ε > 0.9) and inter-connected open cells of the metal foams studied. Morphological parameters characterizing open-celled FeCrAlY foams are subsequently identified and their cross-relationships are built. The non-equilibrium two-equation energy transfer model is employed, and selected calculations show that the non-equilibrium effect between the solid foam skeleton and air is significant. The study indicates that the combined parameter, i.e., the porous medium Rayleigh number, is no longer appropriate to correlate natural convection by itself when the Darcy number is sufficiently large as in the case of natural convection in open-celled metal foams. Good agreement between model predictions and experimental measurements is obtained. © 2005 Elsevier Ltd. All rights reserved.

Thermal radiation in ultralight metal foams with open cells

This paper presents results from experimental measurements on radiative transfer in FeCrAlY (a steel based high temperature alloy) foams having high porosity (95%) and different cell sizes, manufactured at low cost from the sintering route. The spectral transmittance and reflectance are measured at different infrared wavelengths ranging from 2.5 to 50 μm, which are subsequently used to determine the extinction coefficient and foam emissivity. The results show that the spectral quantities are strongly dependent on the wavelength, particularly in the short wavelength regime (<25 μm). Whilst the extinction coefficient decreases with increasing cell size, the effect of cell size on foam reflectance is not significant. When the temperature is increased, the total extinction coefficient increases but the total reflectance decreases. An analytical model based on geometric optics laws, diffraction theory and metal foam morphology is developed to predict the radiative transfer, with cell size (or cell ligament diameter) and porosity identified as the two key parameters that dictate the foam radiative properties. Close agreement between the predicted effective foam conductivity due to radiation alone and that measured is observed. At fixed porosity, the radiative conductivity of the metal foam increases with increasing cell size and temperature. © 2004 Elsevier Ltd.All rights reserved.

The temperature dependence of effective thermal conductivity of open-celled steel alloy foams

The effective thermal conductivity of steel alloy FeCrAlY (Fe-20 wt.% Cr-5 wt.% Al-2 wt.% Y-20 wt.%) foams with a range of pore sizes and porosities was measured between 300 and 800 K, under both vacuum and atmospheric conditions. The results show that the effective thermal conductivity increases rapidly as temperature is increased, particularly in the higher temperature range (500-800 K) where the transport of heat is dominated by thermal radiation. The effective conductivity at temperature 800 K can be three times higher than that at room temperature (300 K). Results obtained under vacuum conditions reveal that the effective conductivity increases with increasing pore size or decreasing porosity. The contribution of natural convection to heat conduction was found to be significant, with the effective thermal conductivity at ambient pressure twice the value of vacuum condition. The results also show that natural convection in metal foams is strongly dependent upon porosity. © 2003 Elsevier B.V. All rights reserved.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Semi-analytic slope delay model for CMOS switch-level timing verification

A novel slope delay model for CMOS switch-level timing verification is presented. It differs from conventional methods in being semianalytic in character. The model assumes that all input waveforms are trapezoidal in overall shape, but that they vary in their slope. This simplification is quite reasonable and does not seriously affect precision, but it facilitates rapid solution. The model divides the stages in a switch-level circuit into two types. One corresponds to the logic gates, and the other corresponds to logic gates with pass transistors connected to their outputs. Semianalytic modeling for both cases is discussed.

A Lagrangian for von Karman Equations of Large Deflection Problem of Thin Circular Plate

By the semi-inverse method proposed by He, a Lagrangian is established for the large deflection problem of thin circular plate. Ritz method is used to obtain an approximate analytical solution of the problem. First order approximate solution is obtained, which is similar to those in open literature. By Mathematica a more accurate solution can be deduced.

A Semi-Empirical Equation of Penetration Depth on Concrete Target Impacted by Ogive-Nose Projectiles

In this paper, the penetration process of ogive-nose projectiles into the semi-infinite concrete target is investigated by the dimensional analysis method and FEM simulation. With the dimensional analysis, main non-dimensional parameters which control the penetration depth are obtained with some reasonable hypothesis. Then, a new semi-empirical equation is present based on the original work of Forrestal et al., has only two non-dimensional combined variables with definite physical meanings. To verify this equation, prediction results are compared with experiments in a wide variation region of velocity. Then, a commercial FEM code, LS-DYNA, is used to simulate the complex penetration process, that also show the novel semi-empirical equation is reasonable for determining the penetration depth in a concrete target.