Effectiveness of a Multi-Component Smoking Cessation Support Programme (McSCSP) for Patients with Severe Mental Disorders: Study Design

Only a few studies have examined the efficacy and safety of smoking cessation programmes in patients with mental disorders. The aim of this paper is to describe in detail the methodology used in the study as well as the Multi-component Smoking Cessation Support Programme in terms of pharmacological treatments and psychological interventions. An open-label 9-month follow-up study was conducted in Spain. A total of 82 clinically stable outpatients with schizophrenia, schizoaffective or bipolar disorder were enrolled. Treatment consisted of a programme specifically developed by the research team for individuals with severe mental disorders. The programme consisted of two phases: (1) weekly individual motivational therapy for 4-12 weeks, and (2) a 12-week active treatment phase. During this phase, at each study visit patients received a one- or two-week supply of medication (transdermal nicotine patches, varenicline or bupropion) with instructions on how to take it, in addition to group psychotherapy for smoking cessation. Evaluations were performed: (1) at the time of enrolment in the study, (2) during the 12-week active treatment phase of the study (weekly for the first 4 weeks and then biweekly), and (3) after the end of this phase (two follow-up assessments at weeks 12 and 24). Evaluations included: (1) smoking history, (2) substance use, (3) psychopathology, (4) adverse events, and (5) laboratory tests. The importance of this study lies in addressing a topical issue often ignored by psychiatrists: the unacceptably high rates of tobacco use in patients with severe mental disorders.

Hydrothermal Synthesis and Study of Inorganic-Organic Hybrid Vanadate of Nickel(II) Coordination Complex with Pyrazine, Ni3(C4H4N2)3(V8O23)

Artículo científico: postprint

Mild Hydrothermal Synthesis, Crystal Structure, Thermal Behavior, Spectroscopic and Magnetic Properties of (NH4)0.80Li0.20[Fe(AsO4)F]

postprint

M(C6H16N3)2(VO3)4 as heterogeneous catalysts. Study of three new hybrid vanadates of cobalt(II), nickel(II) and copper(II) with 1-(2-aminoethyl)piperazonium.

postprint

Nuevos vanadatos híbridos de metales de transición. Síntesis hidrotermal, estudio estructural y de sus propiedades espectroscópicas y magnéticas

267 p.

Hábitos posturais domiciliares e dor lombar e cervical entre adolescentes de uma escola pública de ensino médio do Rio de Janeiro

A prevalência de dor lombar e cervical na adolescência é tão elevada quanto nos adultos e seu início, na adolescência, aumenta o risco de desenvolver dor crônica na vida adulta. Existem poucos estudos que tenham investigado como são os hábitos posturais dos adolescentes durante o tempo que estão em atividades passivas em casa e se esses hábitos estão associados à dor lombar e à dor cervical. Objetivo: Investigar a prevalência de dor lombar (DL) e de dor cervical (DC) em adolescentes e suas associações com hábitos posturais domiciliares enquanto estão assistindo a TV e/ou usando o computador. Métodos: Estudo transversal com adolescentes de uma escola pública de ensino médio do Rio de Janeiro. Os estudantes responderam questões relativas a variáveis sociodemográficas, ao estilo de vida, aos hábitos posturais (ilustrações), ao tempo assistindo a TV, ao tempo usando o computador, ao tempo usando o videogame e sobre a presença da DL e da DC. Foi utilizada regressão logística multivariada para analisar a associação entre hábitos posturais domiciliares e dor lombar e cervical. Resultados: Foram 1102 participantes. A prevalência de DL foi de 46,8% (18,2% dor lombar crônica [DLC] e 28,6% dor lombar aguda [DLA]. A prevalência de dor cervical aguda (DCA) foi de 32,9%. Posturas slump (excessivamente relaxadas) ao assistir a TV e ao usar o computador de mesa estiveram associadas com DLC (RC [razão de chances] 3,22, IC 95% 1,38 7,5 e RC 1,7, IC 95% 1,06 2,73). Participantes que assistiam a TV sentados na cama tiveram uma RC de 2,14 (IC 95% 1,06 4,32) para DLA e os que usavam o notebook em decúbito ventral na cama tiveram uma RC de 2,26 (IC 95% 1,02 5,01) para DLA. Os participantes que assistiam a TV em decúbito dorsal por 2 horas ou mais tiveram uma RC de 6,21 (IC 95% 1,45 26,52) para DCA. Aqueles que disseram que mudavam de postura com frequência, ao usar o computador de mesa por 2 horas ou mais, tiveram uma RC de 0,34 (IC 95% 0,14 0,85) para DCA. Conclusão: Os nossos achados apoiam a elevada prevalência de DL e de DC na adolescência e adicionam a associação com os hábitos posturais domiciliares.

A statistical index of growth condition in an aquaculture experiment

A simple statistical index, for evaluating the condition of growth in an aquaculture experiment and indicating the extent of effect of any plausible rival hypothesis, is presented.

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions. Mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. For the narrow stripe selectively grown InGaAlAs layers with a mesa width of about 1.2 mu m, a bandgap wavelength shift of 70 nm, a photoluminescence (PL) intensity of more than 80% and a PL full width at half maximum (FWHM) of less than 60 meV are obtained simultaneously with a small mask width variation from 0 to 40 mu m. The characteristics of the thickness enhancement ratio and the PL spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.

Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer

The influences of a high-temperature (HT) AlN interlayer (IL) on the phase separation in crack-free AlGaN grown on GaN have been studied. The depth-dependent cathodoluminescence (CL) spectra indicate a relatively uniform Al distribution in the growth direction, but the monochromatic CL images and the CL spectra obtained by line scan measurements reveal a lateral phase separation in AlGaN grown on relatively thick HT-AlN ILs. Moreover, when increasing the thickness of HT-AlN IL, the domain-like distribution of the AlN mole fraction in AlGaN layers is significantly enhanced through a great reduction of the domain size. The morphology of mesa-like small islands separated by V trenches in the HT-AlN IL, and the grain template formed by the coalescence of these islands during the subsequent AlGaN lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the AlGaN layer. (c) 2005 American Institute of Physics.

Thermally tunable optical filter with crystalline silicon as cavity

A novel method to fabricate a thermally tunable filter with a tuning range of 26 nm from 1.504 to 1.530 mum is reported. The high-reffectivity bottom mirror is deposited in the hole formed by anisotropically etching in the basic solution from the backside of the slice with the buried SiO2 layer in silicon-on-insulator substrate as the etching-stop layer. Because of the formation of the mesa and the removing of the substrate of the hole, the power from the metal heater can be more effectively consumed in the crystalline silicon cavity. So it lowers the power consumption and the filter has a higher tuning range. (C) 2004 Elsevier B.V. All rights reserved.

Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser

A novel butt-joint coupling scheme is proposed to improve the coupling efficiency for the integration of a GalnAsP MQW distributed feedback (DFB) laser with an MQW electro-absorption modulator (EAM). The proposed method gives more than 90% coupling efficiency, being much higher than the 26% coupling efficiency of the common MQW-MQW coupling technique. The differential quantum efficiency of the MQW-bulk-MQW coupled device is also much higher than that of the MQW-MQW device, 0.106 mW/mA versus 0.02 mW/mA. The EAM-DFB devices fabricated by the proposed method exhibit a very high modulation efficiency (12 dB/V) from 0 to I V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.28 pF. The experimental results demonstrate that the method can replace the conventional MQW-MQW coupling technique to fabricate high-quality integrated photonic devices. (C) 2007 Elsevier B.V. All rights reserved.

A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.