Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.

Ballistic Single-Electron Quputer

We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor (SET) to measure the final state. Single qubit gates are implemented using quantum dots as phase shifters and electron waveguide couplers as beam splitters. A Coulomb coupler acts as a 2-qubit gate, using a mutual phase modulation effect. Since the electron phase coherence length in GaAs/AlGaAs heterostructures is of the order of 30$\mu$m, several gates (tens) can be implemented before the system decoheres.

EVIDENCE FOR TWO TELLURIUM SITES IN DILUTE LIQUID Te-Tl ALLOYS.

Recently, experimental evidence was presented which suggests that as the stoichiometric composition CuTe, NiTe, Tl//2Te and MnTe are approached from pure Te in the liquid state, substantial charge transfer takes place and Te exists in the form Te**y**31 ions with y close to 2. The system studied (Te-Tl) is one in which charge transfer localizes electrons on the tellurium and leads to semiconducting behavior at the stoichiometric composition Tl//2Te.

Bias-dependent recovery time of all-optical resonant nonlinearity in InGaAsP/InGaAsP MQW waveguide

We have investigated a resonant refractive nonlinearity in a semiconductor waveguide by measuring intensity dependent phase shifts and bias-dependent recovery times. The measurements were performed on an optimized 750-μm-long AR coated buried heterostructure MQW p-i-n waveguide with a bandedge at 1.48 μm. Figure 1 shows the experimental arrangement. The mode-locked color center laser was tuned to 50 meV beyond the bandedge and 8 ps pulses with peak incident power up to 57 W were coupled into the waveguide. Some residual bandtail absorption remains at this wavelength and this is sufficient to cause carriers to be photogenerated and these give rise to a refractive nonlinearity, predominantly by plasma and bandfilling effects. A Fabry-Perot interferometer is used to measure the spectrum of the light which exits the waveguide. The nonlinearity within the guide causes self phase modulation (SPM) of the light and a study of the spectrum allows information to be recovered on the magnitude and recovery time of the nonlinear phase shift with a reasonable degree of accuracy. SPM spectra were recorded for a variety of pulse energies coupled into he unbiased waveguide. Figure 2 shows the resultant phase shift measured from the SPM spectra as a function of pulse energy. The relationship is a linear one, indicating that no saturation of the nonlinearity occurs for coupled pulse energies up to 230 pJ. A π phase shift, the minimum necessary for an all-optical switch, is obtained for a coupled pulse energy of 57 pJ while the maximum phase shift, 4 π, was measured for 230 pJ. The SPM spectra were highly asymmetric with pulse energy shifted to higher frequencies. Such spectra are characteristic of a slow, negative nonlinearity. This relatively slow speed is expected for the unbiased guide as the recovery time will be of the order of the recombination time of the photogenerated electrons, about 1 ns for InGaAsP material. In order to reduce the recovery time of the nonlinearity, it is necessary to remove the photogenerated carriers from the waveguide by a process other than recombination. One such technique is to apply a reverse bias to the waveguide in order to sweep the carriers out. Figure 3 shows the effect on the recovery time of the nonlinearity of applying reverse bias to the waveguide for 230 pJ coupled power. The recovery time was reduced from one much longer than the length of the pulse, estimated to be about 1 ns, at zero bias to 18 ± 3 ps for a bias voltage greater than -4 V. This compares with a value of 24 ps obtained in a bulk waveguide.

Magnetotunnelling spectroscopy: an experimental tool for studying chaos in quantum transport

Resonant tunnelling spectroscopy is used to investigate the energy level spectrum of a wide potential well in the presence of a large magnetic field oriented at angles θ between 0° and 90° to the normal to the plane of the well. In the tilted field geometry, the current-voltage characteristics exhibit a large number of quasiperiodic resonant peaks even though the classical motion of electrons in the potential well is chaotic. The voltage range and spacing of the resonances both change dramatically with θ. We give a quantitative explanation for this behaviour by considering the classical period of unstable periodic orbits within the chaotic sea of the potential well.

High-frequency acousto-electric single-photon source

We propose a single optical photon source for quantum cryptography based on the acoustoelectric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons that reside in the SAW minima and travel at the velocity of sound. In our scheme, the electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single- (or N-) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated. ©2000 The American Physical Society.

How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

Broadband ultrafast pulse generation with double wall carbon nanotubes

Materials with nonlinear optical properties are much sought after for ultrafast photonic applications. Mode-locked lasers can generate ultrafast pulses using saturable absorbers[1]. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs). However, narrow tuning range (tens of nm), complex fabrication and packaging limit their applications[2]. Single wall nanotubes (SWNTs) and graphene offer simpler and cost-effective solutions[1]. Broadband operation can be achieved in SWNTs using a distribution of tube diameters[1,3], or by using graphene[4-8], due to the gapless linear dispersion of Dirac electrons[8,9]. © 2011 IEEE.

Non-linear photoluminescence from graphene

Graphene is in the focus of research due to its unique electronic and optical properties. Intrinsic graphene is a zero gap semiconductor with a linear dispersion relation for E-k leading to zero-effective-mass electrons and holes described by Fermi-Dirac theory. Since pristine graphene has no bandgap no photoluminescence would be expected. However, recently several groups showed non-linear photoluminescence from pristine graphene putting forward different physical models explaining this remarkable effect [1-3]. © 2011 IEEE.

Wideband tunable, high-power, graphene mode-locked ultrafast lasers

Ultrafast passively mode-locked lasers with spectral tuning capability and high output power have widespread applications in biomedical research, spectroscopy and telecommunications [1,2]. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs) [2,3]. However, these typically have a narrow tuning range, and require complex fabrication and packaging [2,3]. A simple, cost-effective alternative is to use Single Wall Carbon Nanotubes (SWNTs) [4,10] and Graphene [10,14]. Wide-band operation is possible using SWNTs with a wide diameter distribution [5,10]. However, SWNTs not in resonance are not used and may contribute to unwanted insertion losses [10]. The linear dispersion of the Dirac electrons in graphene offers an ideal solution for wideband ultrafast pulse generation [10,15]. © 2011 IEEE.

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.

Low partial pressure chemical vapor deposition of graphene on copper

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.

Cryogenic single-shot spectroscopy of a floating poly-silicon gate transistor

Trapped electrons, located close to the channel of a transistor, are promising as data storage elements in non-classical information processing. Cryogenic microwave spectroscopy has shown that these electrons give rise to high quality factor resonances in the drain current and a post excitation dynamic behaviour that is related to the system lifetime. Using a floating poly-silicon gate transistor, single shot spectroscopy is performed to characterise the dynamic behaviour during excitation. This behaviour is seen to be dominated by the decay of the transient component, which gives rise to oscillations around the high quality factor resonance. © 2012 American Institute of Physics.

Calculation of point defects in rutile TiO 2 by the screened-exchange hybrid functional

The formation energies of the oxygen vacancy and titanium interstitial in rutile TiO 2 were calculated by the screened-exchange (sX) hybrid density functional method, which gives a band gap of 3.1 eV, close to the experimental value. The oxygen vacancy gives rise to a gap state lying 0.7 eV below the conduction band edge, whose charge density is localized around the two of three Ti atoms next to the vacancy. The Ti interstitial (Ti int) generates four defect states in the gap, whose unpaired electrons lie on the interstitial and the adjacent Ti 3d orbitals. The formation energy for the neutral oxygen vacancy is 1.9 eV for the O-poor chemical potential. The neutral Ti interstitial has a lower formation energy than the O vacancy under O-poor conditions. This indicates that both the O vacancy and Ti int are relevant for oxygen deficiency in rutile TiO 2 but the O vacancy will dominate under O-rich conditions. This resolves questions about defect localization and defect predominance in the literature. © 2012 American Physical Society.

Gamma-ray spectroscopy at TRIUMF-ISAC

The 8π spectrometer at TRIUMF-ISAC consists of 20 Compton-suppressed germanium detectors and various auxiliary devices. The Ge array, once used for studies of nuclei at high angular momentum, has been transformed into the world's most powerful device dedicated to radioactive-decay studies. Many improvements in the spectrometer have been made, including a high-throughput data acquisition system, installation of a moving tape collector, incorporation of an array of 20 plastic scintillators for β-particle tagging, 5 Si(Li) detectors for conversion electrons, and 10 BaF2 detectors for fast-lifetime measurements. Experiments can be performed where data from all detectors are collected simultaneously, resulting in a very detailed view of the nucleus through radioactive decay. A number of experimental programmes have been launched that take advantage of the versatility of the spectrometer, and the intense beams available at TRIUMF-ISAC. © 2006 American Institute of Physics.