804 resultados para COPPER DEPOSITION


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Xanthomonas axonopodis pv. citri (Xac) causes citrus canker and the completion of the Xac genome sequence has opened up the possibility of investigating basic cellular mechanisms at the genomic level. Copper compounds have been extensively used in agriculture to control plant diseases. The copA and copB genes, identified by annotation of the Xac genome, encode homologues of proteins involved in copper resistance. A gene expression assay by Northern blotting revealed that copA and copB are expressed as a unique transcript specifically induced by copper. Synthesis of the gene products was also induced by copper, reaching a maximum level at 4 h after addition of copper to the culture medium. CopA was a cytosolic protein and CopB was detected in the cytoplasmic membrane. The gene encoding CopA was disrupted by the insertion of a transposon, leading to mutant strains that were unable to grow in culture medium containing copper, even at the lowest CUSO4 concentration tested (0.25 mM), whereas the wild-type strain was able to grow in the presence of 1 mM copper. Cell suspensions of the wild-type and mutant strains in different copper concentrations were inoculated in lemon leaves to analyse their ability to induce citrus canker symptoms. Cells of mutant strains showed higher sensitivity than the wild-type strain in the presence of copper, i.e. they were not able to induce citrus canker symptoms at high copper concentrations and exhibited a more retarded growth in planta.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Ca(Zr0.05Ti0.95)O-3 (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of 2.5 mu C/cm(2), and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about 4.6 x 10(-8) A/cm(2) at 3 V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields. (c) 2006 Elsevier B.V. All rights reserved.

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The electrochemical behavior in 0.5 M H2SO4 at 25 degreesC of a Cu-Al(9.3 wt%)-Ag(4.7 wt%) alloy submitted to different heat treatments and an annealed Cu- Al(9.7 wt%)-Ag(34.2 wt%) were studied by means of open circuit potential (E-mix) measurements, potentiodynamic polarizations and cyclic voltammetry. SEM and EDX microanalysis were used to examine the changes caused by the electrochemical perturbations. The steady state potentials observed for the studied samples were correlated in terms of the phases present in the alloys surface. The resulting E/I potentiodynamic profiles were explained in terms of the potentiodynamic behavior of pure copper and pure silver. The presence of aluminum decreased the extent of copper oxidation. In the apparent Tafel potential region, two anodic Tafel slopes were obtained: 40 mV dec(-1) in the low potential region and 130 mV dec(-1) in the high potential region, which were related with the electrochemical processes involving copper oxidation. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

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The corrosion resistance of three of the constituent phases in high copper dental amalgams has been investigated by electrochemical methods in 0.9% NaCl solution. Polarization curves show corrosion potentials most positive for gamma(1)-Ag2Hg3, followed by Ag-Cu, and gamma-Ag3Sn in agreement with the order of corrosion resistance deduced from the corrosion currents. Complex plane impedance plots at the open circuit potential showed distorted semicircles with diffusional components at low frequency for Ag-Hg and Ag-Cu, while for gamma-Ag3Sn a layer of corrosion products is formed, partially or completely covering the surface of the electrode. Impedance and noise spectra have been compared in the frequency domain, and show good agreement. (C) 2004 Elsevier Ltd. All rights reserved.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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We report here the utilization of atomid layer deposition to passivate surface map states in mosoporous TiO2 nanoparticles for solid state dye sensitized solar cells based on 9,9'-spirobifluorene (spiro-OMeTAD). By depositing ZrO2 films with angstrom-level precision, coating the mesoporous TiO2 produces over a two-fold enhancement in short-circuit current density, as compared to a control device. Impedance spectroscopy measurements provide evidence that the ZrO2 coating reduces recombination lossed at the TiO2/spiro-OMeTAD interface and passivates localized surface states. Low-frequency negative capacitances, frequently observed in nanocomposite solar cells, have been associated with the surface-state mediated charge transfer from TiO2 to the spiro-OMeTAD.

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The effect of tungsten (W6+) ion substituting on dielectric and ferroelectric behavior in SrBi2(Ta0.5Nb0.5)(2)O-9 (SBTN) thin films prepared by polymeric precursor method was investigated at room temperature. The addition of W6+ ion in the SBTN lattice was evaluated by X-ray diffraction (XRD), microstructural and dielectrical properties. An increase in the grain size is evident when tungsten is introduced in the SBTN lattice. Substitution of tungsten until 10% on B site leads to introduce space charge polarization into the system, resulting in an appreciable decrease in both dielectric constant and tangent loss. The morphology of the thin films investigated by atomic force microscopy leads to an increase in the grain size after tungsten addition. Fatigue resistance was noted with increase in tungsten addition. (C) 2007 Elsevier B.V. All rights reserved.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)