New Intermediate band sulphide nanoparticles acting in the full visible light range spectra as an active photocatalyst

Nowadays one of the challenges of materials science is to find new technologies that will be able to make the most of renewable energies. An example of new proposals in this field are the intermediate-band (IB) materials, which promise higher efficiencies in photovoltaic applications (through the intermediate band solar cells), or in heterogeneous photocatalysis (using nanoparticles of them, for the light-induced degradation of pollutants or for the efficient photoevolution of hydrogen from water). An IB material consists in a semiconductor in which gap a new level is introduced [1], the intermediate band (IB), which should be partially filled by electrons and completely separated of the valence band (VB) and of the conduction band (CB). This scheme (figure 1) allows an electron from the VB to be promoted to the IB, and from the latter to the CB, upon absorption of photons with energy below the band gap Eg, so that energy can be absorbed in a wider range of the solar spectrum and a higher current can be obtained without sacrificing the photovoltage (or the chemical driving force) corresponding to the full bandgap Eg, thus increasing the overall efficiency. This concept, applied to photocatalysis, would allow using photons of a wider visible range while keeping the same redox capacity. It is important to note that this concept differs from the classic photocatalyst doping principle, which essentially tries just to decrease the bandgap. This new type of materials would keep the full bandgap potential but would use also lower energy photons. In our group several IB materials have been proposed, mainly for the photovoltaic application, based on extensively doping known semiconductors with transition metals [2], examining with DFT calculations their electronic structures. Here we refer to In2S3 and SnS2, which contain octahedral cations; when doped with Ti or V an IB is formed according to quantum calculations (see e.g. figure 2). We have used a solvotermal synthesis method to prepare in nanocrystalline form the In2S3 thiospinel and the layered compound SnS2 (which when undoped have bandgaps of 2.0 and 2.2 eV respectively) where the cation is substituted by vanadium at a ?10% level. This substitution has been studied, characterizing the materials by different physical and chemical techniques (TXRF, XRD, HR-TEM/EDS) (see e.g. figure 3) and verifying with UV spectrometry that this substitution introduces in the spectrum the sub-bandgap features predicted by the calculations (figure 4). For both sulphide type nanoparticles (doped and undoped) the photocatalytic activity was studied by following at room temperature the oxidation of formic acid in aqueous suspension, a simple reaction which is easily monitored by UV-Vis spectroscopy. The spectral response of the process is measured using a collection of band pass filters that allow only some wavelengths into the reaction system. Thanks to this method the spectral range in which the materials are active in the photodecomposition (which coincides with the band gap for the undoped samples) can be checked, proving that for the vanadium substituted samples this range is increased, making possible to cover all the visible light range. Furthermore it is checked that these new materials are more photocorrosion resistant than the toxic CdS witch is a well know compound frequently used in tests of visible light photocatalysis. These materials are thus promising not only for degradation of pollutants (or for photovoltaic cells) but also for efficient photoevolution of hydrogen from water; work in this direction is now being pursued.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three experiments at three different temperatures are necessary in order to obtain the acceleration factor which relates the time at the stress level with the time at nominal working conditions. . However, up to now only the test at the highest temperature has finished. Therefore, we can not provide complete reliability information but we have analyzed the life data and the failure mode of the solar cells inside the climatic chamber at the highest temperature. The failures have been all of them catastrophic. In fact, the solar cells have turned into short circuits. We have fitted the failure distribution to a two parameters Weibull function. The failures are wear-out type. We have observed that the busbar and the surrounding fingers are completely deteriorate

Intermediate Band to Conduction Band optical absorption in ZnTe:O

ZnTe doped with high concentrations of oxygen has been proposed in previous works as intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demonstrated in this material and it has been possible to measure the absorption coefficient of the transitions from the valence band (VB) to the IB. In this work we present the first measurement of the absorption coefficient associated to transitions from the IB to the conduction band (CB) in ZnTe:O. The samples used are 4 ?m thick ZnTe layers with or without O in a concentration ~ 1019 cm-3, which have been grown on semi-insulating GaAs substrates by molecular beam epitaxy (MBE). The IB-CB absorption coefficient peaks for photon energies ~ 0.4 eV. It is extracted from reflectance and transmittance spectra measured using Fourier Transform Infrared (FTIR) spectroscopy. Under typical FTIR measurement conditions (low light intensity, broadband spectrum) the absorption coefficient in IB-to-CB transitions reaches 700 cm-1. This is much weaker than the one observed for VB-IB absorption. This result is consistent with the fact that the IB is expected to be nearly empty of electrons under equilibrium conditions in ZnTe(:O). The absorption for VB to IB transitions is also observed in the same samples through reflectance measurements performed in the visible range using a monochromator. These measurements are compared with the quantum efficiency (QE) from solar cells fabricated under similar conditions.

InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

In the last decade several prototypes of intermediate band solar cells (IBSCs) have been manufactured. So far, most of these prototypes have been based on InAs/GaAs quantum dots (QDs) in order to implement the IB material. The key operation principles of the IB theory are two photon sub-bandgap (SBG) photocurrent, and output voltage preservation, and both have been experimentally demonstrated at low temperature. At room temperature (RT), however, thermal escape/relaxation between the conduction band (CB) and the IB prevents voltage preservation. To improve this situation, we have produced and characterized the first reported InAs/AlGaAs QD-based IBSCs. For an Al content of 25% in the host material, we have measured an activation energy of 361 meV for the thermal carrier escape. This energy is about 250 meV higher than the energies found in the literature for InAs/GaAs QD, and almost 140 meV higher than the activation energy obtained in our previous InAs/GaAs QD-IBSC prototypes including a specifically designed QD capping layer. This high value is responsible for the suppression of the SBG quantum efficiency under monochromatic illumination at around 220 K. We suggest that, if the energy split between the CB and the IB is large enough, activation energies as high as to suppress thermal carrier escape at room temperature (RT) can be achieved. In this respect, the InAs/AlGaAs system offers new possibilities to overcome some of the problems encountered in InAs/GaAs and opens the path for QD-IBSC devices capable of achieving high efficiency at RT.

Electrical Power Fluctuations in a Network of DC/AC inverters in a Large PV Plant: relationship between correlation, distance and time scale

This paper analyzes the correlation between the fluctuations of the electrical power generated by the ensemble of 70 DC/AC inverters from a 45.6 MW PV plant. The use of real electrical power time series from a large collection of photovoltaic inverters of a same plant is an impor- tant contribution in the context of models built upon simplified assumptions to overcome the absence of such data. This data set is divided into three different fluctuation categories with a clustering proce- dure which performs correctly with the clearness index and the wavelet variances. Afterwards, the time dependent correlation between the electrical power time series of the inverters is esti- mated with the wavelet transform. The wavelet correlation depends on the distance between the inverters, the wavelet time scales and the daily fluctuation level. Correlation values for time scales below one minute are low without dependence on the daily fluctuation level. For time scales above 20 minutes, positive high correlation values are obtained, and the decay rate with the distance depends on the daily fluctuation level. At intermediate time scales the correlation depends strongly on the daily fluctuation level. The proposed methods have been implemented using free software. Source code is available as supplementary material.

Thermal effects and other interesting issues with CPV lenses

The Photovoltaic (PV) Module Reliability Workshop was held in Golden, Colorado, on Feb. 28?March 1, 2012. The objective was to share information to improve PV module reliability because such improvements reduce the cost of solar electricity and give investors confidence in the technology. NREL led the workshop, which was sponsored by the U.S. Department of Energy (DOE) Solar Energy Technologies Program (Solar Program).

The Influence of Different Surface Treatments on the Mechanical Strength of Silicon Wafers

The implementation of photovoltaic solar energy based on silicon is being slowed down by the shortage of raw material. In this context, the use of thinner wafers arises as a solution reducing the amount of silicon in the photovoltaic modules. On the other hand, the manufacturing process with thinner wafers can become complicated with traditional tools. The high number of damaged wafers reduces the global yield. It’s known that edge and surface cracks and defects determine the mechanical strength of wafers. There are several ways of removing these defects e. g. subjecting wafers to a mechanical polishing or to a chemical etching. This paper shows a comparison between different surface treatments and their influence on the mechanical strength.

Crack origin and detection in thin cristallyne solar cells in a production line

In order to reduce cost and make up for the rising price of silicon, silicon wafers are sliced thinner and wider,eading to weaker wafers and increased breakage rates during fabrication process. In this work we have analysed different cracks origins and their effect on wafer’s mechanical strength. To enhance wafer’s strength some etching methods have been tested. Also, we have analysed wafers from different points of an entire standard production process. Mechanical strength of the wafers has been obtained via the four line bending test and detection of cracks has been tested with Resonance Ultrasonic Vibration (RUV) system, developed by the University of South Florida.

Integración de baterías en sistemas fotovoltaicos conectados a red

La situación actual del mercado energético en España y el imparable aumento de las tasas por parte de las eléctricas, está fomentando la búsqueda de fuentes de energía alternativas que permitan a la población poder abastecerse de electricidad, sin tener que pagar unos costes tan elevados. Para cubrir esta necesidad, la energía fotovoltaica y sobretodo el autoconsumo con inyección a red o balance neto, está adquiriendo cada vez más importancia dentro del mundo energético. Pero la penetración de esta tecnología en la Red Eléctrica Española tiene un freno, la desconfianza por parte del operador de la red, ya que la fotovoltaica es una fuente de energía intermitente, que puede introducir inestabilidades en el sistema en caso de alta penetración. Por ello se necesita ganar la confianza de las eléctricas, haciendo que sea una energía predecible, que aporte potencia a la red eléctrica cuando se le pida y que opere participando en la regulación de la frecuencia del sistema eléctrico. Para tal fin, el grupo de investigación de Sistemas Fotovoltaicos, perteneciente al IES de la UPM, está llevando a cabo un proyecto de investigación denominado PV CROPS, financiado por la Comisión Europea, y que tiene por objetivo desarrollar estas estrategias de gestión. En este contexto, el objetivo de este Proyecto Fin de Carrera consiste en implementar un Banco de Ensayos con Integración de Baterías en Sistemas FV Conectados a Red, que permita desarrollar, ensayar y validar estas estrategias. Aprovechando la disponibilidad para usar el Hogar Digital, instalado en la EUITT de la UPM, hemos montado el banco de ensayos en un laboratorio contiguo, y así, poder utilizar este Hogar como un caso real de consumos energéticos de una vivienda. Este banco de ensayos permitirá obtener información de la energía generada por la instalación fotovoltaica y del consumo real de la "casa" anexa, para desarrollar posteriormente estrategias de gestión de la electricidad. El Banco de Ensayos está compuesto por tres bloques principales, interconectados entre sí:  Subsistema de Captación de Datos y Comunicación. Encargado de monitorizar los elementos energéticos y de enviar la información recopilada al Subsistema de Control. Formado por analizadores de red eléctrica, monofásicos y de continua, y una pasarela orientada a la conversión del medio físico Ethernet a RS485.  Subsistema de Control. Punto de observación y recopilación de toda la información que proviene de los elementos energéticos. Es el subsistema donde se crearán y se implementarán estrategias de control energético. Compuesto por un equipo Pxie, controlador empotrado en un chasis de gama industrial, y un equipo PC Host, compuesto por una workstation y tres monitores.  Subsistema de Energía. Formado por los elementos que generan, controlan o consumen energía eléctrica, en el Banco de Ensayos. Constituido por una pérgola FV, un inversor, un inversor bidireccional y un bloque de baterías. El último paso ha sido llevar a cabo un Ejemplo de Aplicación Práctica, con el que hemos probado que el Banco de Ensayos está listo para usarse, es operativo y completamente funcional en operaciones de monitorización de generación energética fotovoltaica y consumo energético. ABSTRACT. The current situation of the energetic market in Spain and the unstoppable increase of the tax on the part of the electrical companies, is promoting the search of alternative sources of energy that allow to the population being able to be supplied of electricity, without having to pay so high costs. To meet this need, the photovoltaic power and above all the self-consumption with injection to network, it is increasingly important inside the energetic world. It allows to the individual not only to pay less for the electricity, in addition it allows to obtain benefits for the energy generated in his own home. But the penetration of this technology in the Electrical Spanish Network has an obstacle, the distrust on the part of the operator of the electrical network, due to the photovoltaic is an intermittent source of energy, which can introduce instabilities in the system in case of high penetration. Therefore it´s necessary to reach the confidence of the electricity companies, making it a predictable energy, which provides with power to the electrical network whenever necessary and that operates taking part in the regulation of the frequency of the electric system. For such an end, the group of system investigation Photovoltaic, belonging to the IES of the UPM, there is carrying out a project of investigation named PV CROPS, financed by the European Commission, and that has for aim to develop these strategies of management. In this context, the objective of this Senior Thesis consists in implementing a Bank of Tests with Integration of Batteries in Photovoltaic Systems Connected to Network, which allows developing, testing and validating these strategies. Taking advantage of the availability to use the Digital Home installed in the EUITT of the UPM, we have mounted the bank of tests in a contiguous laboratory to use this Home as a real case of energetic consumptions of a house. This bank of tests will allow obtaining information of the energy generated by the photovoltaic installation and information of the royal consumption of the attached "house", to develop later strategies of management of the electricity. The Bank of Tests is composed by three principal blocks, interconnected each other:  Subsystem of Gathering of data and Communication. In charge of monitoring the energetic elements and sending the information compiled to the Subsystem of Control. Formed by power analyzers, AC and DC, and a gateway for the conversion of the Ethernet physical medium to RS485.  Subsystem of Control. Point of observation and compilation of all the information that comes from the energetic elements. It is the subsystem where there will be created and there will be implemented strategies of energetic control. Composed of a Pxie, controller fixed in an industrial range chassis, and a PC Host, formed by a workstation and three monitors.  Subsystem of Energy. Formed by the elements of generating, controlling or consuming electric power, in the Bank of Tests. Made of photovoltaic modules, an inverter, a twoway inverter and a batteries block. The last step has been performing an Example of Practical Application we have proved that the Bank of Tests is ready to be used, it´s operative and fully functional in monitoring operations of energetic photovoltaic generation and energetic consumption.

Study of the Edge and Surface Cracks Influence in the Mechanical Strength of Silicon Wafers

The objective of the present study is the estimation of the depth to which the wire sawing process causes damage to the wafer surfaces. Previous analyses were carried out by means of the four line bending test. The characteristic of this test implied that the failure could be due to surface cracks located in the central zone of the wafer or near the edges. In order to evaluate the influence of the edge or surface cracks a new study has been carried out using the ball/ring on ring test. Description and results of the tests are presented. The preliminary analysis of the failure stress using analytical methods confirms the expected results. A Finite Element model developed to get more information of the test results is also presented.

Modelling Structural Flexure Effects in CPV Sun Trackers

Nowadays CPV trends mostly based in lens parqueted flat modules, enable the separate design of the sun tracker. To enable this possibility a set of specifications is to be prescribed for the tracker design team, which take into account fundamental requisites such as the maximum service loads both permanent and variable, the sun tracking accuracy and the tracker structural stiffness required to maintain the CPV array acceptance angle loss below a certain threshold. In its first part this paper outlines the author’s approach to confront these issues. Next, a method is introduced to estimate the acceptance angle losses due to the tracker’s structural flexure, which in last instance relies in the computation of the minimum enclosing circle of a set of points in the plane. This method is also useful to simulate the drifts in the tracker’s pointing vector due to structural deformation as a function of the aperture orientation angle. Results of this method when applied to the design of a two axis CPV pedestal tracker are presented.

Interconexión monolítica de dispositivos fotovoltaicos basados en a-Si mediante ablación directa con fuentes láser ultravioleta

Resumen En la última década la tecnología láser se ha convertido en una herramienta imprescindible en la fabricación de dispositivos fotovoltaicos, muy especial¬mente en aquellos basados en tecnología de lámina delgada. Independiente¬mente de crisis coyunturales en el sector, la evolución en los próximos años de estas tecnologías seguirá aprovechándose de la flexibilidad y calidad de proceso de la herramienta láser para la consecución de los dos objetivos básicos que harán de la fotovoltaica una opción energética económicamente viable: la reducción de costes de fabricación y el aumento de eficiencia de los dispositivos. Dentro de las tecnologías fotovoltaicas de lámina delgada, la tecnología de dispositivos basados en silicio amorfo ha tenido un gran desarrollo en sistemas estándar en configuración de superestrato, pero su limitada efi¬ciencia hace que su supervivencia futura pase por el desarrollo de formatos en configuración de substrato sobre materiales flexibles de bajo coste. En esta aproximación, las soluciones industriales basadas en láser actualmente disponibles para la interconexión monolítica de dispositivos no son aplica¬bles, y desde hace años se viene investigando en la búsqueda de soluciones apropiadas para el desarrollo de dichos procesos de interconexión de forma que sean transferibles a la industria. En este contexto, esta Tesis propone una aproximación completamente orig¬inal, demostrando la posibilidad de ejecutar una interconexión completa de estos dispositivos irradiando por el lado de la lámina (es decir de forma com¬patible con la opción de configuración de substrato y, valga la redundancia, con el substrato del dispositivo opaco), y con fuentes láser emitiendo en UV. Este resultado, obtenido por primera vez a nivel internacional con este trabajo, aporta un conocimiento revelador del verdadero potencial de estas fuentes en el desarrollo industrial futuro de estas tecnologías. Si bien muy posiblemente la solución industrial final requiera de una solución mixta con el empleo de fuentes en UV y, posiblemente, en otras longitudes de onda, esta Tesis y su planteamiento novedoso aportan un conocimiento de gran valor a la comunidad internacional por la originalidad del planteamiento seguido, los resultados parciales encontrados en su desarrollo (un número importante de los cuales han aparecido en revistas del JCR que recogen en la actualidad un número muy significativo de citas) y porque saca además a la luz, con las consideraciones físicas pertinentes, las limitaciones intrínsecas que el desarrollo de procesos de ablación directa selectiva con láseres UV en parte de los materiales utilizados presenta en el rango temporal de in¬teracción de ns y ps. En este trabajo se han desarrollado y optimizado los tres pasos estándar de interconexión (los habitualmente denominados Pl, P2 y P3 en la industria fotovoltaica) demostrando las ventajas y limitaciones del uso de fuentes en UV tanto con ancho temporal de ns como de ps. En particular destaca, por el éxito en los resultados obtenidos, el estudio de procesos de ablación selectiva de óxidos conductores transparentes (en este trabajo utilizados tanto como contacto frontal así como posterior en los módulos) que ha generado resultados, de excelente acogida científica a nivel internacional, cuya aplicación trasciende el ámbito de las tecnologías de silicio amorfo en lámina delgada. Además en este trabajo de Tesis, en el desarrollo del objetivo citado, se han puesto a punto técnicas de análisis de los procesos láser, basadas en métodos avanzados de caracterización de materiales (como el uso combi¬nado de la espectroscopia dispersiva de rayos X y la microscopía confocal de barrido) que se presentan como auténticos avances en el desarrollo de técnicas específicas de caracterización para el estudio de los procesos con láser de ablación selectiva de materiales en lámina delgada, procesos que no solo tienen impacto en el ámbito de la fotovoltaica, sino también en la microelectrónica, la biotecnología, la microfabricación, etc. Como resultado adicional, parte de los resultados de este trabajo, han sido aplicados exi¬tosamente por el grupo de investigaci´on en la que la autora desarrolla su labor para conseguir desarrollar procesos de enorme inter´es en otras tec-nolog´ıas fotovoltaicas, como las tecnolog´ıas est´andar de silicio amorfo sobre vidrio en configuraci´on de superestrato o el procesado de capas delgadas en tecnolog´ıas convencionales de silicio cristalino. Por u´ltimo decir que este trabajo ha sido posible por una colaboraci´on muy estrecha entre el Centro L´aser de la UPM, en el que la autora de¬sarrolla su labor, y el Grupo de Silicio Depositado del Centro de Inves¬tigaciones Energ´eticas, Medioambientales y Tecnol´ogicas, CIEMAT, que, junto al Grupo de Energ´ıa Fotovoltaica de la Universidad de Barcelona, han preparado la mayor parte de las muestras utilizadas en este estudio. Dichas colaboraciones se han desarrollado en el marco de varios proyectos de investigaci´on aplicada con subvenci´on pu´blica, tales como el proyecto singular estrat´egico PSE-MICROSIL08 (PSE-120000-2006-6), el proyecto INNDISOL (IPT-420000-2010-6), ambos financiados porel Fondo Europeo de Desarrollo Regional FEDER (UE) ”Una manera de hacer Europa y el MICINN, y los proyectos de Plan Nacional AMIC (ENE2010-21384-C04-´ 02) y CLASICO (ENE2007-6772-C04-04), cuya financiaci´on ha permitido en gran parte llevar a t´ermino este trabajo Abstract In the last decade, the laser technology has turned into an indispensable tool in the production of photovoltaic devices, especially of those based on thin film technology. Regardless the current crisis in the sector, the evolution of these technologies in the upcoming years will keep taking advantage of the flexibility and process quality of the laser tool for the accomplishment of the two basic goals that will convert the photovoltaic energy into economically viable: the manufacture cost reduction and the increase in the efficiency of the devices. Amongst the thin film laser technologies, the technology of devices based on amorphous silicon has had a great development in standard systems of superstrate configuration, but its limited efficiency makes its survival de¬pendant on the development of formats in substrate configuration with low cost flexible materials. In this approach, the laser industrial solutions cur¬rently available for the monolithic interconnection are not applicable, and in the last few years the investigations have been focused on the search of appropriate solutions for the development of such interconnection processes in a way that the same are transferable to the industry. In this context, this Thesis proposes a totally original approach, proving the possibility of executing a full interconnection of these devices by means of irradiation from the film side, i.e., compatible with the substrate con¬figuration, and with UV laser sources. This result, obtained for the first time at international level in this work, provides a revealing knowledge of the true potential of these sources in the future industrial development of these technologies. Even though very probably the final industrial solution will require a combination of the use of UV sources along with other wave¬lengths, this Thesis and its novel approach contribute with a high value to the international community because of the originality of the approach, the partial results found throughout its development (out of which, a large number has appeared in JCR journals that currently accumulate a signifi¬cant number of citations) and brings to light, with the pertinent scientific considerations, the intrinsic limitations that the selective direct ablation processes with UV laser present in the temporal range of interaction of ns and ps for part of the materials used in this study. More particularly, the three standard steps of interconnection (usually de¬nominated P1, P2 and P3 in the photovoltaic industry) have been developed and optimized, showing the advantages as well as the limitations of the use of UV sources in both the ns and ps pulse-width ranges. It is highly remark¬able, because of the success in the obtained results, the study of selective ablation processes in transparent conductive oxide (in this work used as a front and back contact), that has generated results, of excellent interna¬tional scientific reception, whose applications go beyond the scope of thin film photovoltaic technologies based on amorphous silicon. Moreover, in this Thesis, with the development of the mentioned goal, differ¬ent techniques of analysis of laser processes have been fine-tuned, basing the same in advanced methods for material characterization (like the combined use of EDX Analysis and Confocal Laser Scanning Microscopy) that can be presented as true breakthroughs in the development of specific techniques for characterization in the study of laser processes of selective ablation of materials in thin film technologies, processes that not only have impact in the photovoltaic field, but also in those of microelectronics, biotechnology, micro-fabrication, etc. As an additional outcome, part of the results of this work has been suc¬cessfully applied, by the investigation group to which the author belongs, to the development of processes of enormous interest within other photo¬voltaic technologies, such as the standard technologies on amorphous silicon over glass in superstrate configuration or the processing of thin layers in conventional technologies using crystalline silicon. Lastly, it is important to mention that this work has been possible thanks to the close cooperation between the Centro L´aser of the UPM, in which the author develops her work, and the Grupo de Silicio Depositado of Centro de Investigaciones Energ´eticas, Medioambientales y Tecnol´ogicas, CIEMAT, which, along with the Grupo de Energ´ıa Fotovoltaica of Univer¬sidad de Barcelona, has prepared the largest part of the samples utilized in this study. Such collaborations have been carried out in the context of several projects of applied investigation with public funding, like Proyecto Singular Estrat´egico PSE-MICROSIL08 (PSE-120000-2006-6), Proyecto IN-NDISOL (IPT-420000-2010-6), both funded by the European Regional De¬velopment Fund (ERDF), ”Una manera de hacer Europa” and MICINN, and the projects of Plan Nacional AMIC (ENE2010-21384-C04-02) and ´ CLASICO (ENE2007-6772-C04-04), whose funds have enabled the devel-opment of large part of this work.

Evaluación del potencial fotovoltaico del Campus Sur de la Universidad Politécnica de Madrid

El presente proyecto engloba el estudio del potencial fotovoltaico del Campus Sur de la Universidad Politécnica de Madrid. Este estudio se divide en tres partes. En primer lugar, se calcula la productividad del campus. En segundo lugar, se diseña la disposición de los generadores fotovoltaicos en los terrenos disponibles. Como paso final, se realiza un estudio económico de distintos supuestos. Para realizar los cálculos de productividad, se utiliza IESPRO, un programa desarrollado en Matlab©, junto con una aplicación complementaria desarrollada en el mismo lenguaje. Gracias a estos dos software es posible obtener una estimación muy realista de la energía anual generada. El aprovechamiento del terreno se estudia con la ayuda del software libre Sketchup©. Gracias a esta aplicación, es posible la reconstrucción del Campus Sur en 3D. Dicha reconstrucción incluye edificaciones y vegetación, facilitando la distribución de los generadores fotovoltaicos en todas las zonas, pudiendo evitar zonas con sombreado o no aptas para la instalación, y maximizando la utilización del terreno. El conjunto de los análisis anteriores permiten determinar el rendimiento energético del Campus Sur en sus distintas configuraciones, es decir, únicamente instalando generadores fotovoltaicos en las azoteas de los edificios, o la instalación en todo el terreno disponible, el cual incluye las azoteas y los descampados. Este rendimiento energético, comparado con el consumo anual de todo el campus, permite estimar el coste financiero de llevar a cabo la instalación y su rentabilidad, todo ello detallado en el estudio económico. El estudio económico se basa en dos supuestos, el primero de ellos, únicamente tiene en cuenta la instalación en las azoteas de los edificios. El segundo estudio, incluye los descampados y las azoteas. Con estos dos estudios se puede verificar la viabilidad del proyecto, facilitando datos concretos sobre las ventajas de cada uno de ellos. ABSTRACT. The aim of this work is to study the photovoltaic potential in the South Campus of the Polytechnic University of Madrid. The work has been divided into three parts. The first one is focused on the calculus of the solar harvesting productivity of the South Campus. The second part is centered in the development of the complete photovoltaic system layout design, taking into account the available placement. In the third part, an economic study considering several different scenarios is carried out. In order to calculate the solar productivity, the MATLAB based software tool IESPRO together with a complementary application developed in MATLAB as well, have been used. These programs allow to obtain an accurate estimation of the generated annual energy. The land use is studied with the help of free software SketchUp. With this application, it is possible to rebuild the South Campus in 3D. This reconstruction includes: buildings and vegetation, facilitating the distribution of photovoltaic generators in all areas, to avoid shaded or unsuitable areas for the installation, and maximizing land use. All the above analysis allow determining the energy efficiency of the South Campus for two different configurations, i.e., installing solar photovoltaic arrays only on the roofs of the buildings, or installing solar photovoltaic arrays throughout the land available, including vacant lots and rooftops. The facilities final cost and the cost effectiveness are estimated by comparing the energy efficiency with the South Campus total consumption. This study is based on two different scenarios: the first one considers the solar arrays installation in the buildings roofs, and the second one includes in the layout the vacant lots and rooftops. These studies allow verifying the feasibility of the project, and provide specific information related to the advantages and drawbacks of each scenario.

Banco de ensayos para el control de calidad de paneles solares fotovoltaicos

El objetivo principal del presente Proyecto Fin de Carrera es el de dotar a la Escuela Universitaria de Ingenieros Técnicos de Telecomunicación – Universidad Politécnica de Madrid (EUITT-UPM) de un banco de medida donde poder caracterizar los módulos fotovoltaicos en condiciones reales de operación. Es necesario comprobar el funcionamiento de los módulos para asegurarse de que está acorde a lo indicado en las especificaciones anunciadas por los fabricantes. A lo largo del texto daremos una introducción al concepto de energía solar fotovoltaica y una descripción de los sistemas tanto aislados como los conectados a la red eléctrica de distribución. Hablaremos sobre el fenómeno fotovoltaico y describiremos los módulos fotovoltaicos para ver las partes de las que está compuesto un módulo. Finalmente nos centraremos en el banco de ensayo y acabaremos explicando el caso práctico realizado en la EUITT. A través de la medida de la curva I-V del módulo fotovoltaico en condiciones reales de operación y la extrapolación de los resultados obtenidos a las Condiciones Estándar de Medida (CEM) comprobaremos lo que se ajustan los valores dados por los fabricantes de los módulos solares. ABSTRACT. The main aim of this project is to provide the EUITT-UPM a measure workbench to characterize photovoltaic (PV) modules in real test conditions (RTC). It is necessary to check the PV modules operations to assure that its characteristics are close to the ones given by the manufacturers. I will introduce the concept of photovoltaic solar energy and describe remote systems as well as network-connected systems. I will talk about the photovoltaic phenomenon and describe the PV modules in order to know the parts making up a module. Finally, I shall describe the measure workbench explaining the practical case carried out at the university. By measuring the I-V curve of PV modules in real test conditions and the later extrapolation of the results to the standard test conditions (STC), manufacturers’ data can be compared to the data obtained within this study.