Mechanics of sediment transport and bedrock erosion in steep landscapes

Erosion is concentrated in steep landscapes such that, despite accounting for only a small fraction of Earth’s total surface area, these areas regulate the flux of sediment to downstream basins, and their rugged morphology records transient changes (or lack thereof) in geologic and climatic forcing. Steep landscapes are geomorphically active; large sediment fluxes and rapid landscape evolution rates can create or destroy habitat for humans and wildlife alike, and landslides, debris flows, and floods common in mountainous areas represent a persistent natural and structural hazard. Despite the central role that steep landscapes play in the geosciences and in landscape management, the processes controlling their evolution have been poorly studied compared to lower-gradient areas. This thesis focuses on the basic mechanics of sediment transport and bedrock incision in steep landscapes, as these are the fundamental processes which set the pace and style of landscape evolution. Chapter 1 examines the spatial distribution of slow-moving landslides; these landslides can dominate sediment fluxes to river networks, but the controls on their occurrence are poorly understood. Using a case-study along the San Andreas Fault, California, I show that slow-moving landslides preferentially occur near the fault, suggesting a rock-strength control on landslide distribution. Chapter 2 provides the first field-measurements of incipient sediment motion in streams steeper than 14% and shows a large influence of slope-dependent flow hydraulics and grain-scale roughness on particle motion. Chapter 3 presents experimental evidence for bedrock erosion by suspended sediment, suggesting that, in contrast to prevailing theoretical predictions, suspension-regime transport in steep streams can be the dominant erosion agent. Steep streams are often characterized by the presence of waterfalls and bedrock steps which can have locally high rates of erosion; Chapters 4 and 5 present newly developed, experimentally validated theory on sediment transport through and bedrock erosion in waterfall plunge pools. Finally, Chapter 6 explores the formation of a bedrock slot canyon where interactions between sediment transport and bedrock incision lead to the formation of upstream-propagating bedrock step-pools and waterfalls.

An investigation of the stresses and deflections of swept plates

The problem in this investigation was to determine the stress and deflection patterns of a thick cantilever plate at various angles of sweepback.

The plate was tested at angles of sweepback of zero, twenty, forty, and sixty degrees under uniform shear load at the tip, uniformly distributed load and torsional loading.

For all angles of sweep and for all types of loading the area of critical stress is near the intersection of the root and trailing edge. Stresses near the leading edge at the root decreased rapidly with increase in angle of sweep for all types of loading. In the outer portion of the plate near the trailing edge the stresses due to the uniform shear and the uniformly distributed load did not vary for angles of sweep up to forty degrees. For the uniform shear and the uniformly distributed loads for all angles of sweep the area in which end effect is pronounced extends from the root to approximately three quarters of a chord length outboard of a line perpendicular to the axis of the plate through the trailing edge root. In case of uniform shear and uniformly distributed loads the deflections near the edge at seventy-five per cent semi-span decreased with increase in angle of sweep. Deflections near the trailing edge under the same loading conditions increased with increase in angle of sweep for small angles and then decreased at the higher angles of sweep. The maximum deflection due to torsional loading increased with increase in angle of sweep.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

A generalized Hausdorff dimension for functions and sets

Let E be a compact subset of the n-dimensional unit cube, 1_n, and let C be a collection of convex bodies, all of positive n-dimensional Lebesgue measure, such that C contains bodies with arbitrarily small measure. The dimension of E with respect to the covering class C is defined to be the number

d_C(E) = sup(β:H_{β, C}(E) > 0),

where H_{β, C} is the outer measure

inf(Ʃm(C_i)^β:UC_i Ↄ E, C_i ϵ C) .

Only the one and two-dimensional cases are studied. Moreover, the covering classes considered are those consisting of intervals and rectangles, parallel to the coordinate axes, and those closed under translations. A covering class is identified with a set of points in the left-open portion, 1’_n, of 1_n, whose closure intersects 1_n - 1’_n. For n = 2, the outer measure H_{β, C} is adopted in place of the usual:

Inf(Ʃ(diam. (C_i))^β: UC_i Ↄ E, C_i ϵ C),

for the purpose of studying the influence of the shape of the covering sets on the dimension d_C(E).

If E is a closed set in 1₁, let M(E) be the class of all non-decreasing functions μ(x), supported on E with μ(x) = 0, x ≤ 0 and μ(x) = 1, x ≥ 1. Define for each μ ϵ M(E),

d_C(μ) = lim/c → inf/0 log ∆μ(c)/log c , (c ϵ C)

where ∆μ(c) = v/x (μ(x+c) – μ(x)). It is shown that

d_C(E) = sup (d_C(μ):μ ϵ M(E)).

This notion of dimension is extended to a certain class Ӻ of sub-additive functions, and the problem of studying the behavior of d_C(E) as a function of the covering class C is reduced to the study of d_C(f) where f ϵ Ӻ. Specifically, the set of points in 1₁,

(*) {d_B(F), d_C(f)): f ϵ Ӻ}

is characterized by a comparison of the relative positions of the points of B and C. A region of the form (*) is always closed and doubly-starred with respect to the points (0, 0) and (1, 1). Conversely, given any closed region in 1₂, doubly-starred with respect to (0, 0) and (1, 1), there are covering classes B and C such that (*) is exactly that region. All of the results are shown to apply to the dimension of closed sets E. Similar results can be obtained when a finite number of covering classes are considered.

In two dimensions, the notion of dimension is extended to the class M, of functions f(x, y), non-decreasing in x and y, supported on 1₂ with f(x, y) = 0 for x · y = 0 and f(1, 1) = 1, by the formula

d_C(f) = lim/s · t → inf/0 log ∆f(s, t)/log s · t , (s, t) ϵ C

where

∆f(s, t) = V/x, y (f(x+s, y+t) – f(x+s, y) – f(x, y+t) + f(x, t)).

A characterization of the equivalence d_C1(f) = d_C2(f) for all f ϵ M, is given by comparison of the gaps in the sets of products s · t and quotients s/t, (s, t) ϵ C_i (I = 1, 2).

Habilidades sociais de pais e mães de crianças do Rio de Janeiro: estudo preliminar sobre sua relação com as práticas e estilos parentais

O estilo parental tem influência no desenvolvimento humano e pode ser definido como um padrão de comportamentos identificáveis nos pais quando se relacionam com seus filhos. A literatura tem utilizado alguns parâmetros para compreender os estilos parentais. Um deles se caracteriza pelo binômio: limites-afeto ou responsividade e exigência, delimitando três estilos parentais: Autoritário, Permissivo e Autoritativo. O estilo autoritário caracteriza-se por pais que dão muitos limites e pouco afeto. Estes pais procuram manter a ordem e o controle da família, devendo a obediência ser alcançada ainda que sob padrões punitivos. O estilo permissivo caracteriza-se por pais que dão pouco limite e muito afeto. Nesse caso, há uma crença naturalista segundo a qual a criança deve expressar livremente suas necessidades e aprender por si só. Estes pais não se vêem como responsáveis por ensinar ou modificar comportamentos infantis. O estilo autoritativo caracteriza-se por pais que dão muito limite e muito afeto. O cuidador apresenta condutas intermediárias entre as permissivas e autoritárias, estimulando verbalizações emocionais, permitindo que os filhos participem das decisões, estimulando argumentações, autonomia e disciplina. A empatia é considerada uma habilidade essencial para a manutenção dos laços sociais, que propicia a percepção da necessidade do outro e ao mesmo tempo favorece a sensação de ser compreendido. A assertividade é a habilidade de expressar e defender sua opinião com firmeza e segurança, sem, contudo desrespeitar o outro. Esta pesquisa tem como hipótese a idéia de que pais autoritativos seriam mais empáticos e assertivos do que pais autoritários. O objetivo deste estudo foi correlacionar os Estilos Parentais s Habilidades Sociais: Assertividade e Empatia. Participaram da pesquisa 64 pais, 21 homens e 43 mulheres. Os instrumentos utilizados foram: o Inventário de Habilidades Sociais (IHS-Del Prette), ao Inventario de Empatia (IE FALCONE) e ao Parental Autority Questionary (PAQ). A Análise dos dados foi feita através do SPSS. Foram efetuadas correlações r de Person entre os fatores do PAQ e os fatores do IHS e do IE. Os resultados apontaram para uma correlação positiva (r = 0,30 ; p < 0,05) entre o fator Enfrentamento e Auto-afirmação do IHS e o estilo Autoritativo. Uma relação negativa (r = -0,24 ; p < 0,05) foi observada entre este mesmo fator e o estilo Autoritário. Em relação a empatia, os fatores Tomada de Perspectiva (r = 0,33 ; p < 0,01), Sensibilidade Afetiva (r = 0,25 ; p < 0,05) e Autruismo (r = 0,25 ; p < 0,05) correlacionaram-se positivamente ao estilos Autoritativo, Em relação ao fator Autoritário, foi verificada uma correlação negativa ( r = -0,24 ; p < 0,05) com o fator Altruísmo do IE. A partir deste resultado, foram realizadas três análises de regressão linear múltipla (stepwise) considerando cada um dos fatores do PAQ como variáveis dependentes dos fatores do IHS e do IE. Os Fatores Enfrentamento e Auto-afirmação do IHS e o fator Autruísmo do IE junto explicam 15% da variância do Fator autoritativo. Os resultados apresentados são discutidos a luz da psicologia do desenvolvimento, psicologia social e neuropsicologia.

Never-resting microglia: physiological roles in the healthy brain and pathological implications

Microglia are largely known as the major orchestrators of the brain inflammatory response. As such, they have been traditionally studied in various contexts of disease, where their activation has been assumed to induce a wide range of detrimental effects. In the last few years, a series of discoveries have challenged the current view of microglia, showing their active and positive contribution to normal brain function. This Research Topic will review the novel physiological roles of microglia in the developing, mature and aging brain, under non-pathological conditions. In particular, this Research Topic will discuss the cellular and molecular mechanisms by which microglia contribute to the formation, pruning and plasticity of synapses; the maintenance of the blood brain barrier; the regulation of adult neurogenesis and hippocampal learning; and neuronal survival, among other important roles. Because these novel findings defy our understanding of microglial function in health as much as in disease, this Research Topic will also summarize the current view of microglial nomenclature, phenotypes, origin and differentiation, sex differences, and contribution to various brain pathologies. Additionally, novel imaging approaches and molecular tools to study microglia in their non-activated state will be discussed. In conclusion, this Research Topic seeks to emphasize how the current research in neuroscience is challenged by never-resting microglia.

硬边非稳腔平面波导激光器的光束特性

基于衍射理论和坐标变换,采用数值模拟的方法分析了硬边非稳腔平面波导激光器的光束特性,研究了存在非均匀抽运和增益饱和时,输出激光的光束质量.在端面抽运和边缘抽运时,比较了正支和负支非稳腔的输出光束特性.结果表明：利用优化的离轴硬边非稳腔可以得到近衍射极限的输出.在相同的抽运不均匀性情况下,对于边缘抽运和端面抽运,正支非稳腔的光束质量因子M^2分别为3.9和2.3,而相同条件下负支非稳腔的M^2因子为1.8和1.7.

O léxico, a sintaxe e o discurso poético: uma chave linguística para a leitura de João Cabral de Melo Neto

A proposta deste estudo é confrontar a obra poética de João Cabral de Melo Neto pela perspectiva de uma análise linguístico-discursiva. Procuramos de imediato estabelecer de que maneira um estudo do léxico, da sintaxe e dos aspectos discursivos pode contribuir para a compreensão e o desvendamento da obra desse poeta. Para tanto, concentramos nossas investigações no âmbito dos procedimentos linguísticos de João Cabral, buscando verificar os alcances de atuação da linguagem e do estilo como elementos de manifestação artística da língua, nos limites do léxico e da organização sintática. A partir daí, tentamos entender como essas manifestações produzem os efeitos de sentido na constituição poético-discursiva do texto

Approximate Best Proximity Points of Cyclic Self-maps in Metric Spaces and Cyclic Asymptotic Regularity

3rd International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE) Madrid, AUG 28-31, 2014 / editado por Vagenas, EC; Vlachos, DS; Bastos, C; Hofer, T; Kominis, Y; Kosmas, O; LeLay, G; DePadova, P; Rode, B; Suraud, E; Varga, K

Spray combustion synthesis of nanocrystalline Y2O3 and its thermodynamical and morphological study

Nano Y2O3 particles with a spherical shape and narrow size distribution have been prepared by a novel spray combustion method. The experimental procedure is briefly described and the thermodynamical process of the post-heat treatment is investigated in this paper. The precursor fully crystallized when treated at as low as 400 degrees C. Prepared particles showed spherical shape and well dispersibility under different treating conditions. Narrow size distribution of particles was achieved even when the precursor was treated at 1373 K. (C) 2007 Elsevier B.V. All rights reserved.

Structure and optical properties of ZnS thin films grown by glancing angle deposition

The glancing angle deposition (GLAD) technique was used to deposit ZnS films by electron beam evaporation method. The cross sectional scanning electron microscopy (SEM) image illustrated a highly orientated microstructure composed of slanted column. The atomic force microscopy (APM) analysis indicated that incident flux angle had significant effects on the nodule size and surface roughness. Under identical nominal thickness, the actual thickness of the GLAD films is related to the incident flux angle. The refractive index and in-plane birefringence of the GLAD ZnS films were discussed, and the maximum bireffingence Delta n = 0.036 was obtained at incident flux angle of alpha = 80 degrees. Therefore, the glancing angle deposition technique is a promising way to create a columnar structure with enhanced birefringent property. (c) 2005 Elsevier B.V. All rights reserved.

Self-Similarity and helical symmetry in vortex generator flow simulations

According to experimental observations, the vortices generated by vortex generators have previously been observed to be self-similar for both the axial (u(z)) and azimuthal (u(circle minus)) velocity profiles. Further, the measured vortices have been observed to obey the criteria for helical symmetry. This is a powerful result, since it reduces the highly complex flow to merely four parameters. In the present work, corresponding computer simulations using Reynolds-Averaged Navier-Stokes equations have been carried out and compared to the experimental observations. The main objective of this study is to investigate how well the simulations can reproduce the physics of the flow and if the same analytical model can be applied. Using this model, parametric studies can be significantly reduced and, further, reliable simulations can substantially reduce the costs of the parametric studies themselves.

The center of mass and center of charge of the electron

9th Biennial Conference on Classical and Quantum Relativistic Dynamics of Particles and Fields (IARD)

The Bowhead Whale, Balaena mysticetus: Its Historic and Current Status

The bowhead whale, Balaena mysticetus, is currently listed as endangered under the Endangered Species Act of 1973 and as depleted under the Marine Mammal Protection Act of 1972. Literature on the species is updated since 1984, and elements are reviewed that may contribute to the evaluation of the status of bowhead whale stocks.

Optical and electronic properties of amorphous diamond

The optical and electronic properties of highly tetrahedral amorphous diamond-like carbon (amorphous diamond, a-D) films were investigated. The structure of the films grown on silicon and glass substrates, under similar deposition conditions using a compact filtered cathodic vacuum arc system, are compared using electron energy loss spectroscopy (EELS). Results from hydrogenation of the films are also reported. The hydrogenated films show two prominent IR absorption peaks centered at 2920 and 2840 cm-1, which are assigned to the stretch mode of the C-H bond in the sp3 configuration on the C-H3 and C-H sites respectively. The high loss EELS spectra show no reduction in the high sp3 content in the hydrogenated films. UV and visible transmission spectra of a-D thin films are also presented. The optical band gap of 2.0-2.2 eV for the a-D films is found to be consistent with the electronic bandgap. The relationship between the intrinsic compressive stress in the films and the refractive index is also presented. The space charge limited current flow is analyzed and coupled with the optical absorption data to give an estimate of 1018 cm-3 eV-1 for the valence band edge density of states.