Increasing the fracture toughness of silicon by ion implantation

Previous studies have shown that moderate doses of radiation can lead to increased fracture toughness in ceramics. An experimental investigation was conducted to determine the effects of ion implantation on fracture toughness in silicon. Specimens implanted with Ne showed increased fracture toughness, over the entire range of implantations tested. Using ions of various energies to better distribute implantation damage further increased the fracture toughness even though the region of amorphous damage was slightly decreased. The implantation damage accumulated in a predictable manner so that fracture toughness could be optimized.

Effect of dopants on the fracture toughness of silicon

Fracture experiments were conducted on p-type and n-type Si in the presence and absence of hydrogen. It was found that fracture toughness is slightly less than the fracture toughness of n-type silicon. Annealing silicon in an Ar/H atmosphere gave a hydrogen concentration of less than 0.1 ppm, which did not have any measurable effect on fracture toughness. Likewise, the exposure of pre-cracked specimens to H did not cause any measurable change in fracture toughness.

Molecular dynamics simulation of brittle fracture in silicon

The fracture process involves converting potential energy from a strained body into surface energy, thermal energy, and the energy needed to create lattice defects. In dynamic fracture, energy is also initially converted into kinetic energy. This paper uses molecular dynamics (MD) to simulate brittle frcture in silicon and determine how energy is converted from potential energy (strain energy) into other forms.

Kerr nonlinear switching in a core-shell microspherical resonator fabricated from the silicon fiber platform

We investigate the Kerr nonlinearity in a core-shell microspherical resonator fabricated from a silicon fiber. By exploiting the ultrafast wavelength shifting, sub-picosecond modulation is demonstrated. © OSA 2015.

Tunable coaxial resonators based on silicon optical fibers

Thermal tuning of a coaxial fiber resonator with a silica cladding surrounding an inner silicon core is investigated. By pumping the silicon with below bandgap light, it is possible to redshift the WGM resonances. © 2014 OSA.

Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 1011 s-1 and 1.1 × 10-10 cm3 s-1 for the impurity-assisted recombination and Auger ionization, respectively.

A thermally wavelength-tunable photonic switch based on silicon microring resonator

Silicon photonics is a very promising technology for future low-cost high-bandwidth optical telecommunication applications down to the chip level. This is due to the high degree of integration, high optical bandwidth and large speed coupled with the development of a wide range of integrated optical functions. Silicon-based microring resonators are a key building block that can be used to realize many optical functions such as switching, multiplexing, demultiplaxing and detection of optical wave. The ability to tune the resonances of the microring resonators is highly desirable in many of their applications. In this work, the study and application of a thermally wavelength-tunable photonic switch based on silicon microring resonator is presented. Devices with 10μm diameter were systematically studied and used in the design. Its resonance wavelength was tuned by thermally induced refractive index change using a designed local micro-heater. While thermo-optic tuning has moderate speed compared with electro-optic and all-optic tuning, with silicon’s high thermo-optic coefficient, a much wider wavelength tunable range can be realized. The device design was verified and optimized by optical and thermal simulations. The fabrication and characterization of the device was also implemented. The microring resonator has a measured FSR of ∼18 nm, FWHM in the range 0.1-0.2 nm and Q around 10,000. A wide tunable range (>6.4 nm) was achieved with the switch, which enables dense wavelength division multiplexing (DWDM) with a channel space of 0.2nm. The time response of the switch was tested on the order of 10 μs with a low power consumption of ∼11.9mW/nm. The measured results are in agreement with the simulations. Important applications using the tunable photonic switch were demonstrated in this work. 1×4 and 4×4 reconfigurable photonic switch were implemented by using multiple switches with a common bus waveguide. The results suggest the feasibility of on-chip DWDM for the development of large-scale integrated photonics. Using the tunable switch for output wavelength control, a fiber laser was demonstrated with Erbium-doped fiber amplifier as the gain media. For the first time, this approach integrated on-chip silicon photonic wavelength control.

Silicon photonic device for wavelength sensing and monitoring

Over the last decade advances and innovations from Silicon Photonics technology were observed in the telecommunications and computing industries. This technology which employs Silicon as an optical medium, relies on current CMOS micro-electronics fabrication processes to enable medium scale integration of many nano-photonic devices to produce photonic integrated circuitry. ^ However, other fields of research such as optical sensor processing can benefit from silicon photonics technology, specially in sensors where the physical measurement is wavelength encoded. ^ In this research work, we present a design and application of a thermally tuned silicon photonic device as an optical sensor interrogator. ^ The main device is a micro-ring resonator filter of 10 μm of diameter. A photonic design toolkit was developed based on open source software from the research community. With those tools it was possible to estimate the resonance and spectral characteristics of the filter. From the obtained design parameters, a 7.8 × 3.8 mm optical chip was fabricated using standard micro-photonics techniques. In order to tune a ring resonance, Nichrome micro-heaters were fabricated on top of the device. Some fabricated devices were systematically characterized and their tuning response were determined. From measurements, a ring resonator with a free-spectral-range of 18.4 nm and with a bandwidth of 0.14 nm was obtained. Using just 5 mA it was possible to tune the device resonance up to 3 nm. ^ In order to apply our device as a sensor interrogator in this research, a model of wavelength estimation using time interval between peaks measurement technique was developed and simulations were carried out to assess its performance. To test the technique, an experiment using a Fiber Bragg grating optical sensor was set, and estimations of the wavelength shift of this sensor due to axial strains yield an error within 22 pm compared to measurements from spectrum analyzer. ^ Results from this study implies that signals from FBG sensors can be processed with good accuracy using a micro-ring device with the advantage of ts compact size, scalability and versatility. Additionally, the system also has additional applications such as processing optical wavelength shifts from integrated photonic sensors and to be able to track resonances from laser sources.^

A Thermally Wavelength-tunable Photonic Switch Based on Silicon Microring Resonator

Silicon photonics is a very promising technology for future low-cost high-bandwidth optical telecommunication applications down to the chip level. This is due to the high degree of integration, high optical bandwidth and large speed coupled with the development of a wide range of integrated optical functions. Silicon-based microring resonators are a key building block that can be used to realize many optical functions such as switching, multiplexing, demultiplaxing and detection of optical wave. The ability to tune the resonances of the microring resonators is highly desirable in many of their applications. In this work, the study and application of a thermally wavelength-tunable photonic switch based on silicon microring resonator is presented. Devices with 10µm diameter were systematically studied and used in the design. Its resonance wavelength was tuned by thermally induced refractive index change using a designed local micro-heater. While thermo-optic tuning has moderate speed compared with electro-optic and all-optic tuning, with silicon’s high thermo-optic coefficient, a much wider wavelength tunable range can be realized. The device design was verified and optimized by optical and thermal simulations. The fabrication and characterization of the device was also implemented. The microring resonator has a measured FSR of ~18 nm, FWHM in the range 0.1-0.2 nm and Q around 10,000. A wide tunable range (>6.4 nm) was achieved with the switch, which enables dense wavelength division multiplexing (DWDM) with a channel space of 0.2nm. The time response of the switch was tested on the order of 10 us with a low power consumption of ~11.9mW/nm. The measured results are in agreement with the simulations. Important applications using the tunable photonic switch were demonstrated in this work. 1×4 and 4×4 reconfigurable photonic switch were implemented by using multiple switches with a common bus waveguide. The results suggest the feasibility of on-chip DWDM for the development of large-scale integrated photonics. Using the tunable switch for output wavelength control, a fiber laser was demonstrated with Erbium-doped fiber amplifier as the gain media. For the first time, this approach integrated on-chip silicon photonic wavelength control.

Prospecção tecnológica de células fotovoltaicas para energia solar

Solar energy presents itself as an excellent alternative for the generation of clean, renewable energy. This work aims to identify technological trends of photovoltaic cells for solar energy. The research is characterized, in relation to nature, to be applied; regarding the approach is qualitative and quantitative; with respect to the objectives, it is exploratory and descriptive; concerning the methodological procedure is considered a bibliographic research with a case study in the case of solar photovoltaic sector. The development of this research began with a literature review on photovoltaic solar energy and technology foresight. Then it led to the technology mapping of photovoltaic solar cells through the analysis of articles and patents. It was later performed the technological prospecting of photovoltaic cells for solar energy through the Delphi method, as well as the construction of the current plan and future technology of photovoltaic cells for the current scenario, 2020 and 2025. The results of this research show that the considered mature technologies (silicon mono and multicrystalline) will continue to be commercially viable within the prospected period (2020-2025). Other technologies that are currently viable (amorphous silicon, cadmium telluride and copper indium selenide / Copper indium gallium diselenide-), may not submit the same condition in 2025. Since the cells of silicon nanowires, dye-sensitized and based on carbon nanostructure, which nowadays are not commercially viable, may be part of the future map of photovoltaic technologies for solar energy.

Insegnare matematica nell'era digitale: dall’ardesia al silicio in cinquant’anni

La prima parte dell’elaborato ripercorre la storia dell’introduzione delle tecnologie all’interno delle istituzioni scolastiche, sia dal punto di vista pratico, sia dal punto di vista legislativo, che ha accompagnato questo ingresso tutt’altro che lineare, a partire dagli anni ’80 fino ai giorni nostri grazie alle ultime introduzioni avvenute con la messa in atto del Piano Nazionale Scuola Digitale. Vengono poi descritti alcuni software utilizzati nelle scuole sia in passato che in tempi più recenti per arrivare agli ultimi sviluppi e agli applicativi online per lo studio della matematica. Infine nell’ultimo capitolo è descritta un’unità didattica riguardante lo studio della probabilità, ideata per gli allievi di una scuola secondaria di secondo grado che utilizza la LIM e alcuni software adeguati all’argomento proposto. Quello che emerge, però, è la difficoltà sia nella diffusione delle tecnologie nella scuola, sia nel loro utilizzo da parte dei docenti. Spesso gli insegnanti non hanno un livello adeguato di formazione in ambito tecnologico e quindi non sono in grado di sfruttare pienamente le potenzialità offerte. Il cammino per arrivare ad una completa formazione del personale docente e per la completa digitalizzazione delle scuole è ancora lungo e tortuoso. Tuttavia è importante ricordare che le tecnologie non possono essere la risposta a tutto, bensì un efficace mezzo per attirare l’attenzione e soprattutto stimolare la fantasia di alunni e docenti. Inoltre non si può pensare alcuna tecnologizzazione senza prima aver posto e consolidato le basi di un qualsivoglia argomento da proporre in classe con l’ausilio di software e hardware.

Study of Periodic and Quasi-Periodic Structures in Silicon-on-Insulator

In this thesis, a numerical design approach has been proposed and developed based on the transmission matrix method in order to characterize periodic and quasi-periodic photonic structures in silicon-on-insulator. The approach and its performance have been extensively tested with specific structures in 2D and its validity has been verified in 3D.

Micromachined silicon lenses for terahertz applications

Silicon microlenses are a very important tool for coupling terahertz (THz) radiation into antennas and detectors in integrated circuits. They can be used in a large array structures at this frequency range reducing considerably the crosstalk between the pixels. Drops of photoresist have been deposited and their shape transferred into the silicon by means of a Reactive Ion Etching (RIE) process. Large silicon lenses with a few mm diameter (between 1.5 and 4.5 mm) and hundreds of μm height (between 50 and 350 μm) have been fabricated. The surface of such lenses has been characterized using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM), resulting in a surface roughness of about ∼3 μm, good enough for any THz application. The beam profile at the focal plane of such lenses has been measured at a wavelength of 10.6 μm using a tomographic knife-edge technique and a CO2 laser.

Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications

A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.

Synthesis and characterization of cyclotriphosphazenes containing silicon as single solid-state precursors for the formation of silicon/phosphorus nanostructured materials

The synthesis and characterization of new organosilicon derivatives of N3P3Cl6, N3P3[NH(CH2)3Si(OEt)3]6 (1), N3P3[NH(CH2)3Si(OEt)3]3[NCH3(CH2)3CN]3 (2), and N3P3[NH(CH2)3Si(OEt)3]3[HOC6H4(CH2)CN]3 (3) are reported. Pyrolysis of 1, 2, and 3 in air and at several temperatures results in nanostructured materials whose composition and morphology depend on the temperature of pyrolysis and the substituents of the phosphazenes ring. The products stem from the reaction of SiO2 with P2O5, leading to either crystalline Si5(PO4)6O, SiP2O7 or an amorphous phase as the glass Si5(PO4)6O/3SiO2·2P2O5, depending on the temperature and nature of the trimer precursors. From 1 at 800 °C, core−shell microspheres of SiO2 coated with Si5(PO4)6O are obtained, while in other cases, mesoporous or dense structures are observed. Atomic force microscopy examination after deposition of the materials on monocrystalline silicon wafers evidences morphology strongly dependent on the precursors. Isolated islands of size ∼9 nm are observed from 1, whereas dense nanostructures with a mean height of 13 nm are formed from 3. Brunauer−Emmett−Teller measurements show mesoporous materials with low surface areas. The proposed growth mechanism involves the formation of cross-linking structures and of vacancies by carbonization of the organic matter, where the silicon compounds nucleate. Thus, for the first time, unique silicon nanostructured materials are obtained from cyclic phosphazenes containing silicon.