Effect of van der Waals interaction on the properties of SnS2 layered semiconductor

Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS2 polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS2 geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included.

Neutron spectra and dosimetric assessment around a neutron Howitzer container

The neutron Howitzer container at the Neutron Measurements Laboratory of the Nuclear Engineering Department of the Polytechnic University of Madrid (UPM), is equipped with a 241Am-Be neutron source of 74 GBq in its center. The container allows the source to be in either the irradiation or the storage position. To measure the neutron fluence rate spectra around the Howitzer container, measurements were performed using a Bonner spheres spectrometer and the spectra were unfolded using the NSDann program. A calibrated neutron area monitor LB6411 was used to measure the ambient dose equivalent rates, H*(10). Detailed Monte-Carlo simulations were performed to calculate the measured quantities at the same positions. The maximum relative deviation between simulations and measurements was 19.53%. After validation, the simulated model was used to calculate the equivalent dose rate in several key organs of a voxel phantom. The computed doses in the skin and lenses of the eyes are within the ICRP recommended dose limits, as is the H*(10) value for the storage position.

Evaluation of reactivity monitoring techniques at the Yalina – Booster subcritical facility

La gestión de los residuos radiactivos de vida larga producidos en los reactores nucleares constituye uno de los principales desafíos de la tecnología nuclear en la actualidad. Una posible opción para su gestión es la transmutación de los nucleidos de vida larga en otros de vida más corta. Los sistemas subcríticos guiados por acelerador (ADS por sus siglas en inglés) son una de las tecnologías en desarrollo para logar este objetivo. Un ADS consiste en un reactor nuclear subcrítico mantenido en un estado estacionario mediante una fuente externa de neutrones guiada por un acelerador de partículas. El interés de estos sistemas radica en su capacidad para ser cargados con combustibles que tengan contenidos de actínidos minoritarios mayores que los reactores críticos convencionales, y de esta manera, incrementar las tasas de trasmutación de estos elementos, que son los principales responsables de la radiotoxicidad a largo plazo de los residuos nucleares. Uno de los puntos clave que han sido identificados para la operación de un ADS a escala industrial es la necesidad de monitorizar continuamente la reactividad del sistema subcrítico durante la operación. Por esta razón, desde los años 1990 se han realizado varios experimentos en conjuntos subcríticos de potencia cero (MUSE, RACE, KUCA, Yalina, GUINEVERE/FREYA) con el fin de validar experimentalmente estas técnicas. En este contexto, la presente tesis se ocupa de la validación de técnicas de monitorización de la reactividad en el conjunto subcrítico Yalina-Booster. Este conjunto pertenece al Joint Institute for Power and Nuclear Research (JIPNR-Sosny) de la Academia Nacional de Ciencias de Bielorrusia. Dentro del proyecto EUROTRANS del 6º Programa Marco de la UE, en el año 2008 se ha realizado una serie de experimentos en esta instalación concernientes a la monitorización de la reactividad bajo la dirección del CIEMAT. Se han realizado dos tipos de experimentos: experimentos con una fuente de neutrones pulsada (PNS) y experimentos con una fuente continua con interrupciones cortas (beam trips). En el caso de los primeros, experimentos con fuente pulsada, existen dos técnicas fundamentales para medir la reactividad, conocidas como la técnica del ratio bajo las áreas de los neutrones inmediatos y retardados (o técnica de Sjöstrand) y la técnica de la constante de decaimiento de los neutrones inmediatos. Sin embargo, varios experimentos han mostrado la necesidad de aplicar técnicas de corrección para tener en cuenta los efectos espaciales y energéticos presentes en un sistema real y obtener valores precisos de la reactividad. En esta tesis, se han investigado estas correcciones mediante simulaciones del sistema con el código de Montecarlo MCNPX. Esta investigación ha servido también para proponer una versión generalizada de estas técnicas donde se buscan relaciones entre la reactividad el sistema y las cantidades medidas a través de simulaciones de Monte Carlo. El segundo tipo de experimentos, experimentos con una fuente continua e interrupciones del haz, es más probable que sea empleado en un ADS industrial. La versión generalizada de las técnicas desarrolladas para los experimentos con fuente pulsada también ha sido aplicada a los resultados de estos experimentos. Además, el trabajo presentado en esta tesis es la primera vez, en mi conocimiento, en que la reactividad de un sistema subcrítico se monitoriza durante la operación con tres técnicas simultáneas: la técnica de la relación entre la corriente y el flujo (current-to-flux), la técnica de desconexión rápida de la fuente (source-jerk) y la técnica del decaimiento de los neutrones inmediatos. Los casos analizados incluyen la variación rápida de la reactividad del sistema (inserción y extracción de las barras de control) y la variación rápida de la fuente de neutrones (interrupción larga del haz y posterior recuperación). ABSTRACT The management of long-lived radioactive wastes produced by nuclear reactors constitutes one of the main challenges of nuclear technology nowadays. A possible option for its management consists in the transmutation of long lived nuclides into shorter lived ones. Accelerator Driven Subcritical Systems (ADS) are one of the technologies in development to achieve this goal. An ADS consists in a subcritical nuclear reactor maintained in a steady state by an external neutron source driven by a particle accelerator. The interest of these systems lays on its capacity to be loaded with fuels having larger contents of minor actinides than conventional critical reactors, and in this way, increasing the transmutation rates of these elements, that are the main responsible of the long-term radiotoxicity of nuclear waste. One of the key points that have been identified for the operation of an industrial-scale ADS is the need of continuously monitoring the reactivity of the subcritical system during operation. For this reason, since the 1990s a number of experiments have been conducted in zero-power subcritical assemblies (MUSE, RACE, KUCA, Yalina, GUINEVERE/FREYA) in order to experimentally validate these techniques. In this context, the present thesis is concerned with the validation of reactivity monitoring techniques at the Yalina-Booster subcritical assembly. This assembly belongs to the Joint Institute for Power and Nuclear Research (JIPNR-Sosny) of the National Academy of Sciences of Belarus. Experiments concerning reactivity monitoring have been performed in this facility under the EUROTRANS project of the 6th EU Framework Program in year 2008 under the direction of CIEMAT. Two types of experiments have been carried out: experiments with a pulsed neutron source (PNS) and experiments with a continuous source with short interruptions (beam trips). For the case of the first ones, PNS experiments, two fundamental techniques exist to measure the reactivity, known as the prompt-to-delayed neutron area-ratio technique (or Sjöstrand technique) and the prompt neutron decay constant technique. However, previous experiments have shown the need to apply correction techniques to take into account the spatial and energy effects present in a real system and thus obtain accurate values for the reactivity. In this thesis, these corrections have been investigated through simulations of the system with the Monte Carlo code MCNPX. This research has also served to propose a generalized version of these techniques where relationships between the reactivity of the system and the measured quantities are obtained through Monte Carlo simulations. The second type of experiments, with a continuous source with beam trips, is more likely to be employed in an industrial ADS. The generalized version of the techniques developed for the PNS experiments has also been applied to the result of these experiments. Furthermore, the work presented in this thesis is the first time, to my knowledge, that the reactivity of a subcritical system has been monitored during operation simultaneously with three different techniques: the current-to-flux, the source-jerk and the prompt neutron decay techniques. The cases analyzed include the fast variation of the system reactivity (insertion and extraction of a control rod) and the fast variation of the neutron source (long beam interruption and subsequent recovery).

Advanced data acquisition system implementation for the ITER Neutron Diagnostic use case using EPICS and FlexRIO technology on a PXIe platform

In the framework of the ITER Control Breakdown Structure (CBS), Plant System Instrumentation & Control (I&C) defines the hardware and software required to control one or more plant systems [1]. For diagnostics, most of the complex Plant System I&C are to be delivered by ITER Domestic Agencies (DAs). As an example for the DAs, ITER Organization (IO) has developed several use cases for diagnostics Plant System I&C that fully comply with guidelines presented in the Plant Control Design Handbook (PCDH) [2]. One such use case is for neutron diagnostics, specifically the Fission Chamber (FC), which is responsible for delivering time-resolved measurements of neutron source strength and fusion power to aid in assessing the functional performance of ITER [3]. ITER will deploy four Fission Chamber units, each consisting of three individual FC detectors. Two of these detectors contain Uranium 235 for Neutron detection, while a third "dummy" detector will provide gamma and noise detection. The neutron flux from each MFC is measured by the three methods: . Counting Mode: measures the number of individual pulses and their location in the record. Pulse parameters (threshold and width) are user configurable. . Campbelling Mode (Mean Square Voltage): measures the RMS deviation in signal amplitude from its average value. .Current Mode: integrates the signal amplitude over the measurement period

Passive neutron area monitor with pairs of TLDs as neutron detector

A passive neutron area monitor has been designed using Monte Carlo methods; the monitor is a polyethylene cylinder with pairs of thermoluminescent dosimeters (TLD600 and TLD700) as thermal neutron detector. The monitor was calibrated with a bare and a thermalzed 241AmBe neutron sources and its performance was evaluated measuring the ambient dose equivalent due to photoneutrons produced by a 15 MV linear accelerator for radiotherapy and the neutrons in the output of a TRIGA Mark III radial beam port.

MOVPE growth of III-V semiconductors on silicon for third generation solar cells

Esta Tesis trata sobre el desarrollo y crecimiento -mediante tecnología MOVPE (del inglés: MetalOrganic Vapor Phase Epitaxy)- de células solares híbridas de semiconductores III-V sobre substratos de silicio. Esta integración pretende ofrecer una alternativa a las células actuales de III-V, que, si bien ostentan el récord de eficiencia en dispositivos fotovoltaicos, su coste es, a día de hoy, demasiado elevado para ser económicamente competitivo frente a las células convencionales de silicio. De este modo, este proyecto trata de conjugar el potencial de alta eficiencia ya demostrado por los semiconductores III-V en arquitecturas de células fotovoltaicas multiunión con el bajo coste, la disponibilidad y la abundancia del silicio. La integración de semiconductores III-V sobre substratos de silicio puede afrontarse a través de diferentes aproximaciones. En esta Tesis se ha optado por el desarrollo de células solares metamórficas de doble unión de GaAsP/Si. Mediante esta técnica, la transición entre los parámetros de red de ambos materiales se consigue por medio de la formación de defectos cristalográficos (mayoritariamente dislocaciones). La idea es confinar estos defectos durante el crecimiento de sucesivas capas graduales en composición para que la superficie final tenga, por un lado, una buena calidad estructural, y por otro, un parámetro de red adecuado. Numerosos grupos de investigación han dirigido sus esfuerzos en los últimos años en desarrollar una estructura similar a la que aquí proponemos. La mayoría de éstos se han centrado en entender los retos asociados al crecimiento de materiales III-V, con el fin de conseguir un material de alta calidad cristalográfica. Sin embargo, prácticamente ninguno de estos grupos ha prestado especial atención al desarrollo y optimización de la célula inferior de silicio, cuyo papel va a ser de gran relevancia en el funcionamiento de la célula completa. De esta forma, y con el fin de completar el trabajo hecho hasta el momento en el desarrollo de células de III-V sobre silicio, la presente Tesis se centra, fundamentalmente, en el diseño y optimización de la célula inferior de silicio, para extraer su máximo potencial. Este trabajo se ha estructurado en seis capítulos, ordenados de acuerdo al desarrollo natural de la célula inferior. Tras un capítulo de introducción al crecimiento de semiconductores III-V sobre Si, en el que se describen las diferentes alternativas para su integración; nos ocupamos de la parte experimental, comenzando con una extensa descripción y caracterización de los substratos de silicio. De este modo, en el Capítulo 2 se analizan con exhaustividad los diferentes tratamientos (tanto químicos como térmicos) que deben seguir éstos para garantizar una superficie óptima sobre la que crecer epitaxialmente el resto de la estructura. Ya centrados en el diseño de la célula inferior, el Capítulo 3 aborda la formación de la unión p-n. En primer lugar se analiza qué configuración de emisor (en términos de dopaje y espesor) es la más adecuada para sacar el máximo rendimiento de la célula inferior. En este primer estudio se compara entre las diferentes alternativas existentes para la creación del emisor, evaluando las ventajas e inconvenientes que cada aproximación ofrece frente al resto. Tras ello, se presenta un modelo teórico capaz de simular el proceso de difusión de fosforo en silicio en un entorno MOVPE por medio del software Silvaco. Mediante este modelo teórico podemos determinar qué condiciones experimentales son necesarias para conseguir un emisor con el diseño seleccionado. Finalmente, estos modelos serán validados y constatados experimentalmente mediante la caracterización por técnicas analíticas (i.e. ECV o SIMS) de uniones p-n con emisores difundidos. Uno de los principales problemas asociados a la formación del emisor por difusión de fósforo, es la degradación superficial del substrato como consecuencia de su exposición a grandes concentraciones de fosfina (fuente de fósforo). En efecto, la rugosidad del silicio debe ser minuciosamente controlada, puesto que éste servirá de base para el posterior crecimiento epitaxial y por tanto debe presentar una superficie prístina para evitar una degradación morfológica y cristalográfica de las capas superiores. En este sentido, el Capítulo 4 incluye un análisis exhaustivo sobre la degradación morfológica de los substratos de silicio durante la formación del emisor. Además, se proponen diferentes alternativas para la recuperación de la superficie con el fin de conseguir rugosidades sub-nanométricas, que no comprometan la calidad del crecimiento epitaxial. Finalmente, a través de desarrollos teóricos, se establecerá una correlación entre la degradación morfológica (observada experimentalmente) con el perfil de difusión del fósforo en el silicio y por tanto, con las características del emisor. Una vez concluida la formación de la unión p-n propiamente dicha, se abordan los problemas relacionados con el crecimiento de la capa de nucleación de GaP. Por un lado, esta capa será la encargada de pasivar la subcélula de silicio, por lo que su crecimiento debe ser regular y homogéneo para que la superficie de silicio quede totalmente pasivada, de tal forma que la velocidad de recombinación superficial en la interfaz GaP/Si sea mínima. Por otro lado, su crecimiento debe ser tal que minimice la aparición de los defectos típicos de una heteroepitaxia de una capa polar sobre un substrato no polar -denominados dominios de antifase-. En el Capítulo 5 se exploran diferentes rutinas de nucleación, dentro del gran abanico de posibilidades existentes, para conseguir una capa de GaP con una buena calidad morfológica y estructural, que será analizada mediante diversas técnicas de caracterización microscópicas. La última parte de esta Tesis está dedicada al estudio de las propiedades fotovoltaicas de la célula inferior. En ella se analiza la evolución de los tiempos de vida de portadores minoritarios de la base durante dos etapas claves en el desarrollo de la estructura Ill-V/Si: la formación de la célula inferior y el crecimiento de las capas III-V. Este estudio se ha llevado a cabo en colaboración con la Universidad de Ohio, que cuentan con una gran experiencia en el crecimiento de materiales III-V sobre silicio. Esta tesis concluye destacando las conclusiones globales del trabajo realizado y proponiendo diversas líneas de trabajo a emprender en el futuro. ABSTRACT This thesis pursues the development and growth of hybrid solar cells -through Metal Organic Vapor Phase Epitaxy (MOVPE)- formed by III-V semiconductors on silicon substrates. This integration aims to provide an alternative to current III-V cells, which, despite hold the efficiency record for photovoltaic devices, their cost is, today, too high to be economically competitive to conventional silicon cells. Accordingly, the target of this project is to link the already demonstrated efficiency potential of III-V semiconductor multijunction solar cell architectures with the low cost and unconstrained availability of silicon substrates. Within the existing alternatives for the integration of III-V semiconductors on silicon substrates, this thesis is based on the metamorphic approach for the development of GaAsP/Si dual-junction solar cells. In this approach, the accommodation of the lattice mismatch is handle through the appearance of crystallographic defects (namely dislocations), which will be confined through the incorporation of a graded buffer layer. The resulting surface will have, on the one hand a good structural quality; and on the other hand the desired lattice parameter. Different research groups have been working in the last years in a structure similar to the one here described, being most of their efforts directed towards the optimization of the heteroepitaxial growth of III-V compounds on Si, with the primary goal of minimizing the appearance of crystal defects. However, none of these groups has paid much attention to the development and optimization of the bottom silicon cell, which, indeed, will play an important role on the overall solar cell performance. In this respect, the idea of this thesis is to complete the work done so far in this field by focusing on the design and optimization of the bottom silicon cell, to harness its efficiency. This work is divided into six chapters, organized according to the natural progress of the bottom cell development. After a brief introduction to the growth of III-V semiconductors on Si substrates, pointing out the different alternatives for their integration; we move to the experimental part, which is initiated by an extensive description and characterization of silicon substrates -the base of the III-V structure-. In this chapter, a comprehensive analysis of the different treatments (chemical and thermal) required for preparing silicon surfaces for subsequent epitaxial growth is presented. Next step on the development of the bottom cell is the formation of the p-n junction itself, which is faced in Chapter 3. Firstly, the optimization of the emitter configuration (in terms of doping and thickness) is handling by analytic models. This study includes a comparison between the different alternatives for the emitter formation, evaluating the advantages and disadvantages of each approach. After the theoretical design of the emitter, it is defined (through the modeling of the P-in-Si diffusion process) a practical parameter space for the experimental implementation of this emitter configuration. The characterization of these emitters through different analytical tools (i.e. ECV or SIMS) will validate and provide experimental support for the theoretical models. A side effect of the formation of the emitter by P diffusion is the roughening of the Si surface. Accordingly, once the p-n junction is formed, it is necessary to ensure that the Si surface is smooth enough and clean for subsequent phases. Indeed, the roughness of the Si must be carefully controlled since it will be the basis for the epitaxial growth. Accordingly, after quantifying (experimentally and by theoretical models) the impact of the phosphorus on the silicon surface morphology, different alternatives for the recovery of the surface are proposed in order to achieve a sub-nanometer roughness which does not endanger the quality of the incoming III-V layers. Moving a step further in the development of the Ill-V/Si structure implies to address the challenges associated to the GaP on Si nucleation. On the one hand, this layer will provide surface passivation to the emitter. In this sense, the growth of the III-V layer must be homogeneous and continuous so the Si emitter gets fully passivated, providing a minimal surface recombination velocity at the interface. On the other hand, the growth should be such that the appearance of typical defects related to the growth of a polar layer on a non-polar substrate is minimized. Chapter 5 includes an exhaustive study of the GaP on Si nucleation process, exploring different nucleation routines for achieving a high morphological and structural quality, which will be characterized by means of different microscopy techniques. Finally, an extensive study of the photovoltaic properties of the bottom cell and its evolution during key phases in the fabrication of a MOCVD-grown III-V-on-Si epitaxial structure (i.e. the formation of the bottom cell; and the growth of III-V layers) will be presented in the last part of this thesis. This study was conducted in collaboration with The Ohio State University, who has extensive experience in the growth of III-V materials on silicon. This thesis concludes by highlighting the overall conclusions of the presented work and proposing different lines of work to be undertaken in the future.

Doping in MARCA (1975-1990)

En el estudio histórico del dopaje en España, conocer el papel de los medios de comunicación escritos, como el diario deportivo Marca, resulta ser de gran relevancia. La función que el periódico más vendido en España ha desempeñado a lo largo de los años con relación al deportista sospechoso, permite conocer de qué manera el discurso social se ha estructurado basándose precisamente en cómo sus cronistas han narrado el caso de dopaje.

High-brightness all semiconductor laser at 1.57 µm for space-borne lidar measurements of atmospheric carbon dioxide: device design and analysis of requirements

The availability of suitable laser sources is one of the main challenges in future space missions for accurate measurement of atmospheric CO2. The main objective of the European project BRITESPACE is to demonstrate the feasibility of an all-semiconductor laser source to be used as a space-borne laser transmitter in an Integrated Path Differential Absorption (IPDA) lidar system. We present here the proposed transmitter and system architectures, the initial device design and the results of the simulations performed in order to estimate the source requirements in terms of power, beam quality, and spectral properties to achieve the required measurement accuracy. The laser transmitter is based on two InGaAsP/InP monolithic Master Oscillator Power Amplifiers (MOPAs), providing the ON and OFF wavelengths close to the selected absorption line around 1.57 µm. Each MOPA consists of a frequency stabilized Distributed Feedback (DFB) master oscillator, a modulator section, and a tapered semiconductor amplifier optimized to maximize the optical output power. The design of the space-compliant laser module includes the beam forming optics and the thermoelectric coolers.The proposed system replaces the conventional pulsed source with a modulated continuous wave source using the Random Modulation-Continuous Wave (RM-CW) approach, allowing the designed semiconductor MOPA to be applicable in such applications. The system requirements for obtaining a CO2 retrieval accuracy of 1 ppmv and a spatial resolution of less than 10 meters have been defined. Envelope estimated of the returns indicate that the average power needed is of a few watts and that the main noise source is the ambient noise.

Temporally flat top pulse generation from gain switched semiconductor lasers based on a polarization interferometer with variable transfer function

We propose the use of a polarization based interferometer with variable transfer function for the generation of temporally flat top pulses from gain switched single mode semiconductor lasers. The main advantage of the presented technique is its flexibility in terms of input pulse characteristics, as pulse duration, spectral bandwidth and operating wavelength. Theoretical predictions and experimental demonstrations are presented and the proposed technique is applied to two different semiconductor laser sources emitting in the 1550 nm region. Flat top pulses are successfully obtained with input seed pulses with duration ranging from 40 ps to 100 ps.

Determination of the crystal and magnetic structure of the DyCrO4-scheelite polymorph by neutron diffraction

Neutron diffraction data of DyCrO4 oxide, prepared at 4 GPa and 833 K from the ambient pressure zircon-type, reveal that crystallize with the scheelite-type structure, space group I41/a. Accompanying this structural phase transition induced by pressure the magnetic properties change dramatically from ferromagnetism in the case of zircon to antiferromagnetism for the scheelite polymorph with a T N= 19 K. The analysis of the neutron diffraction data obtained at 1.2 K has been used to determine the magnetic structure of this DyCrO4-scheelite oxide which can be described with a k = [0, 0, 0] as propagation vector, where the Dy and Cr moments are lying in the ab-plane of the scheelite structure. The ordered magnetic moments are 10 µB and 1 µB for Dy+3 and Cr+5 respectively

Analysis of the performance of tapered semiconductor optical amplifiers: role of the taper angle

The beam properties of tapered semiconductor optical amplifiers emitting at 1.57 μm are analyzed by means of simulations with a self-consistent steady state electro-optical and thermal simulator. The results indicate that the self-focusing caused by carrier lensing is delayed to higher currents for devices with taper angle slightly higher than the free diffraction angle.

Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm

Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency.

High brightness semiconductor lasers as transmitters for space lidar systems

High brightness semiconductor lasers are potential transmitters for future space lidar systems. In the framework of the European Project BRITESPACE, we propose an all-semiconductor laser source for an Integrated Path Differential Absorption lidar system for column-averaged measurements of atmospheric CO2 in future satellite missions. The complete system architecture has to be adapted to the particular emission properties of these devices using a Random Modulated Continuous Wave approach. We present the initial experimental results of the InGaAsP/InP monolithic Master Oscillator Power Amplifiers, providing the ON and OFF wavelengths close to the selected absorption line around 1572 nm.

Random-modulation cw lidar system for space-borne carbon dioxide remote sensing based on a high-brightness semiconductor laser

In this paper, we report on the progresses of the BRITESPACE Consortium in order to achieve space-borne LIDAR measurements of atmospheric carbon dioxide concentration based on an all semiconductor laser source at 1.57 ?m. The complete design of the proposed RM-CW IPDA LIDAR has been presented and described in detail. Complete descriptions of the laser module and the FSU have been presented. Two bended MOPAs, emitting at the sounding frequency of the on- and off- IPDA channels, have been proposed as the transmitter optical sources with the required high brightness. Experimental results on the bended MOPAs have been presented showing a high spectral purity and promising expectations on the high output power requirements. Finally, the RM-CW approach has been modelled and an estimation of the expected SNR for the entire system is presented. Preliminary results indicate that a CO2 retrieval precision of 1.5 ppm could be achieved with an average output power of 2 W for each channel.

Why neutron guides may end up breaking down? Some results on the macroscopic behaviour of alkali-borosilicate glass support plates under neutron irradiation

In this paper we report on a first part of a study on the mechanisms leading to brittle fracture in neutron guides made of glass as structural element. Such devices are widely used to deliver thermal and cold neu tron beams to experimental lines in most large neutron research facilities. We present results on macroscopic properties of samples of guide glass substrates which are subjected to neutron irradiation at relatively large fluences. The results show a striking dependence of some of the macroscopic properties such as density, shape or surface curvature upon the specific chemical composition of a given glass. The relevance of the present findings for the installation of either replacement guides at the existing facilities or for the deployment of instruments for ongoing projects such as the European Spallation Source is briefly discussed.