992 resultados para Semiconducting zinc compounds


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A bottom-up technique for synthesizing transversely suspended zinc oxide nanowires (ZnO NWs) under a zinc nitrate (Zn(NO 3) 2· 6H 2O) and hexamethylenetetramine (HMTA, (CH 2) 6·N 4) solution within a microfabricated device is reported in this paper. The device consists of a microheater which is used to initially create an oxidized ZnO seed layer. ZnO NWs are then locally synthesized by the microheater and electrodes embedded within the devices are used to drive electric field directed horizontal alignment of the nanowires within the device. The entire process is carried out at low temperature. This approach has the potential to considerably simplify the fabrication and assembly of ZnO nanowires on CMOS compatible substrates, allowing for the chemical synthesis to be carried out under near-ambient conditions by locally defining the conditions for nanowire growth on a silicon reactor chip. © 2012 IEEE.

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Highly c-axis oriented ZnO films have been deposited at room temperature with high rates (∼50 nm·min -1) using an innovative remote plasma sputtering configuration, which allows independent control of the plasma density and the sputtering ion energy. The ZnO films deposited possess excellent crystallographic orientation, high resistivity (>10 9 Ω·m), and exhibit very low surface roughness. The ability to increase the sputtering ion energy without causing unwanted Ar + bombardment onto the substrate has been shown to be crucial for the growth of films with excellent c-axis orientation without the need of substrate heating. In addition, the elimination of the Ar + bombardment has facilitated the growth of films with very low defect density and hence very low intrinsic stress (100 MPa for 3 μm-thick films). This is over an order of magnitude lower than films grown with a standard magnetron sputtering system. © 2012 American Institute of Physics.

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Two near-ultraviolet (UV) sensors based on solution-grown zinc oxide (ZnO) nanowires (NWs) which are only sensitive to photo-excitation at or below 400 nm wavelength have been fabricated and characterized. Both devices keep all processing steps, including nanowire growth, under 100 °C for compatibility with a wide variety of substrates. The first device type uses a single optical lithography step process to allow simultaneous in situ horizontal NW growth from solution and creation of symmetric ohmic contacts to the nanowires. The second device type uses a two-mask optical lithography process to create asymmetric ohmic and Schottky contacts. For the symmetric ohmic contacts, at a voltage bias of 1 V across the device, we observed a 29-fold increase in current in comparison to dark current when the NWs were photo-excited by a 400 nm light-emitting diode (LED) at 0.15 mW cm(-2) with a relaxation time constant (τ) ranging from 50 to 555 s. For the asymmetric ohmic and Schottky contacts under 400 nm excitation, τ is measured between 0.5 and 1.4 s over varying time internals, which is ~2 orders of magnitude faster than the devices using symmetric ohmic contacts.

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Here we present our on-going efforts toward the development of stable ballasted carbon nanotube-based field emitters employing hydrothermally synthesized zinc oxide nanowires and thin film silicon-on-insulator substrates. The semiconducting channel in each controllably limits the emission current thereby preventing detrimental burn-out of individual emitters that occurs due to unavoidable statistical variability in emitter characteristics, particularly in their length. Fabrication details and emitter characterization are discussed in addition to their field emission performance. The development of a beam steerable triode electron emitter formed from hexagonal carbon nanotube arrays with central focusing nanotube electrodes, is also described. Numerical ab-initio simulations are presented to account for the empirical emission characteristics. Our engineered ballasted emitters have shown some of the lowest reported lifetime variations (< 0.7%) with on-times of < 1 ms, making them ideally-suited for next-generation displays, environmental lighting and portable x-rays sources. © 2012 SPIE.

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A catalyst-free synthesis of ZnO nanostructures using platinum microheaters under ambient environmental conditions has been developed. Different types of ZnO nanostructures are synthesized from the oxidization of Zn thin film by local heating. The characterization of two shapes of Pt microheaters is investigated and the relationship between the applied power for heat generation and ZnO nanostructure synthesis is investigated by local heating experiments under ambient conditions. Based on the developed heating approach, synthesis area, location, and morphologies of ZnO nanostructures can be controlled through the deposited thickness of Zn layer and applied heating voltages. Furthermore, a connected multiple-structure (Zn-ZnO-Zn) layer is synthesized using combinative multimicroheaters. © 2002-2012 IEEE.

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The paper reports on the in-situ growth of zinc oxide nanowires (ZnONWs) on a complementary metal oxide semiconductor (CMOS) substrate, and their performance as a sensing element for ppm (parts per million) levels of toluene vapour in 3000 ppm humid air. Zinc oxide NWs were grown using a low temperature (only 90°C) hydrothermal method. The ZnONWs were first characterised both electrically and through scanning electron microscopy. Then the response of the on-chip ZnONWs to different concentrations of toluene (400-2600ppm) was observed in air at 300°C. Finally, their gas sensitivity was determined and found to lie between 0.1% and 0.3% per ppm. © 2013 IEEE.

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In this paper, we demonstrate an approach for the local synthesis of ZnO nanowires (ZnO NWs) and the potential for such structures to be incorporated into device applications. Three network ZnO NW devices are fabricated on a chip by using a bottom-up synthesis approach. Microheaters (defined by standard semiconductor processing) are used to synthesize the ZnO NWs under a zinc nitrate (Zn(NO3)2·6H2O) and hexamethylenetetramine (HMTA, (CH2)6·N4) solution. By controlling synthesis parameters, varying densities of networked ZnO NWs are locally synthesized on the chip. The fabricated networked ZnO NW devices are then characterized using UV excitation and cyclic voltammetry (CV) experiments to measure their photoresponse and electrochemical properties. The experimental results show that the techniques and material systems presented here have the potential to address interesting device applications using fabrication methods that are fully compatible with standard semiconductor processing. © 2013 IEEE.

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We present results on laser action from liquid crystal compounds whereby one sub-unit of the molecular structure consists of the cyano-substituted chromophore, {phenylene-bis (2-cyanopropene)}, similar to the basic unit of the semiconducting polymer structure poly(cyanoterephthalylidene). These compounds were found to exhibit nematic liquid crystal phases. In addition, by virtue of the liquid crystalline properties, the compounds were found to be highly miscible in wide temperature range commercial nematogen mixtures. When optically excited at λ = 355 nm, laser emission was observed in the blue/green region of the visible spectrum (480-530 nm) and at larger concentrations by weight than is achievable using conventional laser dyes. Upon increasing the concentration of dye from 2 to 5 wt.% the threshold was found to increase from Eth = 0.42 ± 0.02 μJ/pulse (≈20 mJ/cm2) to Eth = 0.66 ± 0.03 μJ/pulse (≈34 mJ/cm2). Laser emission was also observed at concentrations of 10 wt.% but was less stable than that observed for lower concentrations of the chromophore. © 2012 Elsevier B.V. All rights reserved.

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Synthesis of polycationic compounds by the spray-drying technique is an interesting alternative in the domain of aqueous precursor synthesis methods. Spray drying yields high quality samples with good reproducibility. The possibility of scaling up for production of large quantities with fast processing time is well established by the commercial availability of powders of various compositions. In this paper, we have discussed the advantages and limitations of this method and demonstrated its interest by synthesizing a few polycationic compounds selected for their attractive properties of thermoelectricity [Bi1.68Ca2Co1.69O 8, La0.95A0.05CoO3 (A=Ca, Sr, Ba)] or magnetoresistance [La0.70A0.30MnO3 (A=Sr, Ba)]. We have confirmed the quality of these samples by reporting their structure, magnetic and transport properties. © 2010 Elsevier Ltd All rights reserved.

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LiMn2-xTixO4 compounds with 0 ≤ x ≤ 1 were prepared by solid state reaction and Pechini technique. Powder X-ray diffraction showed that all samples crystallize with the spinel crystal structure (S.G. Fd3-m). The cubic unit-cell parameter increases with the Ti content. The influence of the Ti content and cationic distribution on the magnetic properties of the compounds was studied by measuring the temperature and magnetic field dependences of the magnetization: substitution by non-magnetic d0 Ti4+ ions appeared to weaken the magnetic interactions between the manganese ions. The electrical properties of LiMnTiO4 were studied by AC impedance spectroscopy and DC polarisation measurements, which revealed the electronic character of the conduction process. © 2006 Elsevier B.V. All rights reserved.