Una prueba de la técnica multi-espécimen para determinar paleointensidad utilizando material arqueomagnetico: resultados preliminares con arcillas quemadas Tunecinas

The multispecimen palaeointensity technique of Dekkers & Böhnel (2006) has been tested on archaeomagnetic material from five kilns from Tunisia. In a previous study all five kilns yielded good quality archaeointensities based on Thellier-type double heating experiments. Results obtained using the multispecimen technique compared well with the previously studied Thellier-type results, with a slight tendency towards lower values. Markedly lower values were observed in two kilns, results that were improved by increasing the proportion of the natural remanence remagnetised in the partial thermoremanence acquisition. One of the kilns showed a multicomponent remanence (due to partial heating) and gave relatively poor results.

Material effects on stress-induced defect generation in trenched silicon-on-insulator structures

We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator structures. A strong dependence of the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic categories; heavily boron-doped silicon showed ready slip generation, arsenic and antimony-doped material was fairly resistant to slip, while silicon moderately or lightly doped with phosphorous or boron gave intermediate behavior. The observed behavior appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. The introduction of an implanted buried layer at the bonding interface was found to result in an increase in slip generation in the silicon, again with a variation according to the dopant species. Here, the greatest slip occurred for both boron and antimony-implanted samples. The weakening of the implanted material may be related to the presence of a band of precipitates observed in the silicon near the bonding interface. (C) 2001 The Electrochemical Society.