Conduction-electron localized-moment interaction in palladium-silicon base amorphous alloys containing transition metals

The electrical and magnetic properties of amorphous alloys obtained by rapid quenching from the liquid state have been studied. The composition of these alloys corresponds to the general formula M_xPd_80-xSi₂₀, in which M stands for a metal of the first transition series between chromium and nickel and x is its atomic concentration. The concentration ranges within which an amorphous structure could be obtained were: from 0 to 7 for Cr, Mn and Fe, from 0 to 11 for Co and from 0 to 15 for Ni. A well-defined minimum in the resistivity vs temperature curve was observed for all alloys except those containing nickel. The alloys for which a resistivity minimum was observed had a negative magnetoresistivity approximately proportional to the square of the magnetization and their susceptibility obeyed the Curie-Weiss law in a wide temperature range. For concentrated Fe and Co alloys the resistivity minimum was found to coexist with ferromagnetism. These observations lead to the conclusion that the present results are due to a s-d exchange interaction. The unusually high resistivity minimum temperature observed in the Cr alloys is interpreted as a result of a high Kondo temperature and a large s-d exchange integral. A low Fermi energy of the amorphous alloys (3.5 eV) is also responsible for the anomalies due to the s-d exchange interaction.

Silicide formation and the interaction of metals with polycrystalline Si

The main factors affecting solid-phase Si-metal interactions are reported in this work. The influence of the orientation of the Si substrates and the presence of impurities in metal films and at the Si-metal interface on the formation of nickel and chromium silicides have been demonstrated. We have observed that the formation and kinetic rate of growth of nickel silicides is strongly dependent on the orientation and crystallinity of the Si substrates; a fact which, up to date, has never been seriously investigated in silicide formation. Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of CrSi₂. The potentiality and use of silicides as a diffusion barrier in metallization on silicon devices were also investigated.

Two phases, Ni₂Si and NiSi, form simultaneously in two distinct sublayers in the reaction of Ni with amorphous Si, while only the former phase was observed on other substrates. On (111) oriented Si substrates the growth rate is about 2 to 3 times less than that on <100> or polycrystalline Si. Transmission electron micrographs establish-·that silicide layers grown on different substrates have different microcrystalline structures. The concept of grain-boundary diffusion is speculated to be an important factor in silicide formation.

The composition and kinetic rate of CrSi₂ formation are not influenced by the underlying Si substrate. While the orientation of the Si substrate does not affect the formation of CrSi₂ , the purity of the Cr film and the state of Si-Cr interface become the predominant factors in the reaction process. With an interposed layer of Pd₂Si between the Cr film and the Si substrate, CrSi₂ starts to form at a much lower temperature (400°C) relative to the Si-Cr system. However, the growth rate of CrSi₂ is observed to be independent of the thickness of the Pd2Si layer. For both Si-Cr and Si-Pd₂Si-Cr samples, the growth rate is linear with time with an activation energy of 1.7 ± 0.1 ev.

A tracer technique using radioactive ³¹Si (T_1/2 = 2.26 h) was used to study the formation of CrSi₂ on Pd₂Si. It is established from this experiment that the growth of CrSi₂ takes place partly by transport of Si directly from the Si substrate and partly by breaking Pd₂Si bonds, making free Si atoms available for the growth process.

The role of CrSi₂ in Pd-Al metallization on Si was studied. It is established that a thin CrSi₂ layer can be used as a diffusion barrier to prevent Al from interacting with Pd₂Si in the Pd-Al metallization on Si.

As a generalization of what has been observed for polycrystalline-Si-Al interaction, the reactions between polycrystalline Si (poly Si) and other metals were studied. The metals investigated include Ni, Cr, Pd, Ag and Au. For Ni, Cr and Pd, annealing results in silicide formation, at temperatures similar to those observed on single crystal Si substrates. For Al, Ag and Au, which form simple eutectics with Si annealing results in erosion of the poly Si layer and growth of Si crystallites in the metal films.

Backscattering spectrometry with 2.0 and 2.3 MeV ⁴He ions was the main analytical tool used in all our investigations. Other experimental techniques include the Read camera glancing angle x-ray diffraction, scanning electron, optical and transmission electron microscopy. Details of these analytical techniques are given in Chapter II.

Optical levitation measurements with intensity-modulated light beams

Illumination of an optically levitated particle with an intensity-modulated transverse beam induces a transverse vibration of a particle in an optical trap. Based on this, the trapping force of a trap can be measured. Using an intensity-modulated longitudinal levitating beam causes a particle to move vertically, allowing for the determination of some aerodynamic parameters of a particle in air. The principles and the experimental phenomena are described and the initial results are given. (C) 1997 Optical Society of America.

Resolution and noise in ghost imaging with classical thermal light

The resolution and classical noise in ghost imaging with a classical thermal light are investigated theoretically. For ghost imaging with a Gaussian Schell model source, the dependences of the resolution and noise on the spatial coherence of the source and the aperture in the imaging system are discussed and demonstrated by using numerical simulations. The results show that an incoherent source and a large aperture will lead to a good image quality and small noise.

Nanophotonic Light Trapping In Thin Solar Cells

Over the last several decades there have been significant advances in the study and understanding of light behavior in nanoscale geometries. Entire fields such as those based on photonic crystals, plasmonics and metamaterials have been developed, accelerating the growth of knowledge related to nanoscale light manipulation. Coupled with recent interest in cheap, reliable renewable energy, a new field has blossomed, that of nanophotonic solar cells.

In this thesis, we examine important properties of thin-film solar cells from a nanophotonics perspective. We identify key differences between nanophotonic devices and traditional, thick solar cells. We propose a new way of understanding and describing limits to light trapping and show that certain nanophotonic solar cell designs can have light trapping limits above the so called ray-optic or ergodic limit. We propose that a necessary requisite to exceed the traditional light trapping limit is that the active region of the solar cell must possess a local density of optical states (LDOS) higher than that of the corresponding, bulk material. Additionally, we show that in addition to having an increased density of states, the absorber must have an appropriate incoupling mechanism to transfer light from free space into the optical modes of the device. We outline a portfolio of new solar cell designs that have potential to exceed the traditional light trapping limit and numerically validate our predictions for select cases.

We emphasize the importance of thinking about light trapping in terms of maximizing the optical modes of the device and efficiently coupling light into them from free space. To further explore these two concepts, we optimize patterns of superlattices of air holes in thin slabs of Si and show that by adding a roughened incoupling layer the total absorbed current can be increased synergistically. We suggest that the addition of a random scattering surface to a periodic patterning can increase incoupling by lifting the constraint of selective mode occupation associated with periodic systems.

Lastly, through experiment and simulation, we investigate a potential high efficiency solar cell architecture that can be improved with the nanophotonic light trapping concepts described in this thesis. Optically thin GaAs solar cells are prepared by the epitaxial liftoff process by removal from their growth substrate and addition of a metallic back reflector. A process of depositing large area nano patterns on the surface of the cells is developed using nano imprint lithography and implemented on the thin GaAs cells.

Study of Solid-Phase Reactions of metals on GaAs

To make stable and reproducible contacts to GaAs, metals which react with GaAs in the solid-phase should be favored. In this study, contacts formed employing Pd/TiN/Pd/Ag, Pd:Mg/TiN/Pd:Mg/Ag and Ru/TiN/Ru/Ag are studied. The TiN layer is included to investigate its application as diffusion barrier in these metallizations. Contacts to n-GaAs are rectifying and the value of barrier height is modified upon annealing. Contacts to p-GaAs are initially rectifying but exhibit ohmic behaviour after annealing. The modifications in the electrical properties are attributed to the solid-phase reaction of metal and GaAs. The integrity of the contacts relies critically on the success of TiN to prevent the intermixing of Ag overlayer and the underlying layers. At elevated annealing temperatures (450°C), TiN fails to function as a diffusion barrier. As a result, the properties of the contact deteriorates.

Coherent scattering of light by Bose-Einstein condensation in a tight confinement

We have observed strong scattering of a probe light by dilute Bose-Einstein condensate (BEC) Rb-87 gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap.

Nonlinear dynamics of negatively refracted light in a resonantly absorbing Bragg reflector

The evolution of nonlinear light fields traveling inside a resonantly absorbing Bragg reflector is studied by use of Maxwell-Bloch equations. Numerical results show that a pulse initially resembling a light bullet may effectively experience negative refraction and anomalous dispersion in the resonantly absorbing Bragg reflector. (c) 2007 Optical Society of America.

Ghost imaging with thermal light by third-order correlation

Ghost imaging with classical incoherent light by third-order correlation is investigated. We discuss the similarities and the differences between ghost imaging by third-order correlation and by second-order correlation, and analyze the effect from each correlation part of the third-order correlation function on the imaging process. It is shown that the third-order correlated imaging includes richer correlated imaging effects than the second-order correlated one, while the imaging information originates mainly from the correlation of the intensity fluctuations between the test detector and each reference detector, as does ghost imaging by second-order correlation.

Phase shift caused by microwave field based on light storage

We have theoretically investigated the phase shift of a probe field for a four-level atomic system interacting successively with two fields tuned near an EIT resonance of an atom, a microwave field, and a coupling field. It has been found that the phase of retrieved signal has been shifted due to the cross-phase modulation when the stored spin wave was disturbed by a microwave. Because of the low relaxation rates of the ground hyperfine state, our proposed technique can impart a large phase rotation onto the probe field with low absorption of retrieved field and very low intensity of the microwave field.

Light-induced evaporative cooling in a magneto-optical trap

This paper presents an experimental demonstration of light-induced evaporative cooling in a magneto-optical trap. An additional laser is used to interact with atoms at the edge of the atomic cloud in the trap. These atoms get an additional force and evaporated away from the trap by both the magnetic field and laser fields. There remaining atoms have lower kinetic energy and thus are cooled. It reports the measurements on the temperature and atomic number after the evaporative cooling with different parameters including the distance between the laser and the centre of the atomic cloud, the detuning, the intensity. The results show that the light-induced evaporative cooling is a way to generate an ultra-cold atom source.

Laser cooling of rubidium atoms from background vapor in diffuse light

In this paper we describe an experiment on laser cooling of Rb-87 atoms directly from a vapor background in diffuse light. Diffuse light is produced in a ceramic integrating sphere by multiple scattering of two laser beams injected through multimode fibers. A probe beam, whose propagation direction is either horizontal or vertical, is used to detect cold atoms. We measured the absorption spectra of the cold atoms by scanning the frequency of the probe beam, and observed both the absorption signal and the time of flight signal after we switched off the cooling light, from which we estimated the temperature and the number of cold atoms. This method is clearly attractive for building a compact cold atom clock.

Nonlinear spectroscopy of cold atoms in diffuse laser light

The nonlinear spectroscopy of cold atoms in the diffuse laser cooling system is studied in this paper. We present the theoretical models of the recoil-induced resonances (RIR) and the electromagnetically-induced absorption (EIA) of cold atoms in diffuse laser light, and show their signals in an experiment of cooling Rb-87 atomic vapor in an integrating sphere. The theoretical results are in good agreement with the experimental ones when the light intensity distribution in the integrating sphere is considered. The differences between nonlinear spectra of cold atoms in the diffuse laser light and in the optical molasses are also discussed. (c) 2009 Optical Society of America