Very high modulation efficiency two-sections tapered laser diode at 1060nm for free space optical communications

High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in free-space optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 6 mm-long tapered laser, we have obtained a very high power of 5W CW and a very high static modulation efficiency of 59.8 W/A. © 2011 SPIE.

Effects of high-order laser distortion products in radio over free-space optical links

RoFSO links are found to be susceptible to high-order laser distortion making conventional SFDR ineffective as a performance indicator. For the first time, peak input power is demonstrated as a service-independent bound on dynamic range. © 2011 OSA.

The direct field boundary impedance of two-dimensional periodic structures with application to high frequency vibration prediction.

Large sections of many types of engineering construction can be considered to constitute a two-dimensional periodic structure, with examples ranging from an orthogonally stiffened shell to a honeycomb sandwich panel. In this paper, a method is presented for computing the boundary (or edge) impedance of a semi-infinite two-dimensional periodic structure, a quantity which is referred to as the direct field boundary impedance matrix. This terminology arises from the fact that none of the waves generated at the boundary (the direct field) are reflected back to the boundary in a semi-infinite system. The direct field impedance matrix can be used to calculate elastic wave transmission coefficients, and also to calculate the coupling loss factors (CLFs), which are required by the statistical energy analysis (SEA) approach to predicting high frequency vibration levels in built-up systems. The calculation of the relevant CLFs enables a two-dimensional periodic region of a structure to be modeled very efficiently as a single subsystem within SEA, and also within related methods, such as a recently developed hybrid approach, which couples the finite element method with SEA. The analysis is illustrated by various numerical examples involving stiffened plate structures.

Progress in ultra-high modulation efficiency tapered lasers for free-space communications

Simultaneous high power (2W), high modulation speed (1Gb/s) and high modulation efficiency (14 W/A) operation of a two-electrode tapered laser is reported. © 2011 IEEE.

Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction

This paper demonstrates and discusses novel "three dimensional" silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures. The proposed designs are both compact and effective in safely distributing the electrostatic potential away from the active device area. The designs are based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The study/demonstration is done through extensive experimental measurements and numerical simulations. © 2012 IEEE.

Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold

The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative. © 2012 American Institute of Physics.

Effects of high-order laser distortion products in radio over free-space optical links

RoFSO links are found to be susceptible to high-order laser distortion making conventional SFDR ineffective as a performance indicator. For the first time, peak input power is demonstrated as a service-independent bound on dynamic range. © OSA/ CLEO 2011.