Random lasing in a bistable smectic A liquid crystal

In this work, we examine the phenomenon of random lasing from the smectic A liquid crystal phase. We summarise our results to date on random lasing from the smectic A phase including the ability to control the output from the sample using applied electric fields. In addition, diffuse random lasing is demonstrated from the electrohydrodynamic instabilities of a smectic A liquid crystal phase that has been doped with a low concentration of ionic impurities. Using a siloxane-based liquid crystal doped with ionic impurities and a laser dye, nonresonant random laser emission is observed from the highly scattering texture of the smectic A phase which is stable in zero-field. With the application of a low frequency alternating current electric field, turbulence is induced due to motion of the ions. This is accompanied by a decrease in the emission linewidth and an increase in the intensity of the laser emission. The benefit in this case is that a field is not required to maintain the texture as the scattering and homeotropic states are both stable in zero field. This offers a lower power consumption alternative to the electric-field induced static scattering sample.

Red-Green-Blue 2D tuneable liquid crystal laser devices

In this paper, we review our recent experimental work on coherent and blue phase liquid crystal lasers.We will present results on thin-film photonic band edge lasing devices using dye-doped low molar mass liquid crystals in self-organised chiral nematic and blue phases. We show that high Q-factor lasers can be achieved in these materials and demonstrate that a single mode output with a very narrow line width can be readily achievable in well-aligned mono-domain samples. Further, we have found that the performance of the laser, i.e. the slope efficiency and the excitation threshold, are dependent upon the physical parameters of the low molar mass chiral nematic liquid crystals. Specifically, slope efficiencies greater than 60% could be achieved depending upon the materials used and the device geometry employed. We will discuss the important parameters of the liquid crystal host/dye guest materials and device configuration that are needed to achieve such high slope efficiencies. Further we demonstrate how the wavelength of the laser can be tuned using an in-plane electric field in a direction perpendicular to the helix axis via a flexoelectric mechanism as well as thermally using thermochromic effects. We will then briefly outline data on room temperature blue phase lasers and further show how liquid crystal/lenslet arrays have been used to demonstrate 2D laser emission of any desired wavelength. Finally, we present preliminary data on LED/incoherent pumping of RG liquid crystal lasers leading to a continuous wave output. © 2009 SPIE.

Mechanical constraint and loading on ferroelectric memory capacitors

The influence of mechanical constraint imposed by device geometry upon the switching response of a ferroelectric thin film memory capacitor is investigated. The memory capacitor was represented by two-dimensional ferroelectric islands of different aspect ratio, mechanically constrained by surrounding materials. Its ferroelectric non-linear behaviour was modeled by a crystal plasticity constitutive law and calculated using the finite element method. The switching response of the device, in terms of remnant charge storage, was determined as a function of geometry and constraint. The switching response under applied in-plane tensile stress and hydrostatic pressure was also studied experimentally. Our results showed that (1) the capacitor's aspect ratio could significantly affect the clamping behaviour and thus the remnant polarization, (2) it was possible to maximise the switching charge through the optimisation of the device geometry, and (3) it is possible to find a critical switching stress at zero electric field and a critical coercive field at zero residual stress. © 2009 Materials Research Society.

CNTs and CNT/ZnO nanostructures for use as electron sources

The aim of this paper is to describe the growth and optimization of carbon nanotube (CNT) and CNT/Zinc Oxide nanostructures to produce novel electron sources. The emitters studied in this project are based on regular array of vertically aligned 5 μm height and 50 nm diameter CNTs with a pitch of 10 μm as described previously (1). Such a cathode design allows us to minimize electric field shielding effects and thus to help in optimizing the emitted current density. We have previously obtained a current density of 1 A/cm 2 from such arrays in DC mode, and over 12 A/cm2 in pulsed mode at RF frequencies. © 2010 IEEE.

Plans for laser spectroscopy of trapped cold hydrogen-like HCI

Laser spectroscopy studies are being prepared to measure the 1s ground state hyperfine splitting in trapped cold highly charged ions. The purpose of such experiments is to test quantum electrodynamics in the strong electric field regime. These experiments form part of the HITRAP project at GSI. A brief review of the planned experiments is presented. © 2005 Elsevier B.V. All rights reserved.

Far-infrared emission and absorption by hot carriers in superlattices

Some of the earliest theoretical speculation, stimulated by the growth of semiconductor superlattices, focused on novel devices based on vertical transport through engineered band structures; Esaki and Tsu promised Bloch oscillators in narrow mini-band systems and Kazarinov and Suris contemplated electrically stimulated intersubband transitions as sources of infrared radiation. Nearly twenty years later these material systems have been perfected, characterized and understood and experiments are emerging that test some of these original concepts for novel submillimetre wave electronics. Here we describe recent experiments on intersubband emission in quantum wells stimulated by resonant tunnelling currents. A critical issue at this time is devising a way to achieve population inversion. Other experiments explore 'saturation' effects in narrow miniband transport. Thermal saturation may be viewed as a precursor to Bloch oscillation if the same effects can be induced with an applied electric field.

A metal-polymer composite with unusual properties

Electrically conductive composites that contain conductive filler dispersed in an insulating polymer matrix are usually prepared by the vigorous mixing of the components. This affects the structure of the filler particles and thereby the properties of the composite. It is shown that by careful mixing nano-scale features on the surface of the filler particles can be retained. The fillers used possess sharp surface protrusions similar to the tips used in scanning tunnelling microscopy. The electric field strength at these tips is very large and results in field assisted (Fowler-Nordheim) tunnelling. In addition the polymer matrix intimately coats the filler particles and the particles do not come into direct physical contact. This prevents the formation of chains of filler particles in close contact as the filler content increases. In consequence the composite has an extremely high resistance even at filler loadings above the expected percolation threshold. The retention of filler particle morphology and the presence of an insulating polymer layer between them endow the composite with a number of unusual properties. These are presented here together with appropriate physical models. © 2005 IOP Publishing Ltd.

Fast-switching phase gratings using in-plane addressed short-pitch polymer stabilized chiral nematic liquid crystals

We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched “on” and “off” reversibly in 600 µs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times.

ANALYTICAL DEVICE FOR TEST FLUIDS, COMPRISES A CONDUCTIVE POLYMER COMPOSITION

A sensor for chemical species or biological species or radiation presenting to test fluid a polymer composition comprises polymer and conductive filler metal, alloy or reduced metal oxide and having a first level of electrical conductance when quiescent and being convertible to a second level of conductance by change of stress applied by stretching or compression or electric field, in which the polymer composition is characterised by at least one of the features in the form of particles at least 90% w/w held on a 100 mesh sieve; and/or comprising a permeable body extending across a channel of fluid flow; and/or affording in-and-out diffusion of test fluid and/or mechanically coupled to a workpiece of polymer swellable by a constituent of test fluid.

Red-Green-Blue 2D tuneable liquid crystal laser devices

In this paper, we review our recent experimental work on coherent and blue phase liquid crystal lasers.We will present results on thin-film photonic band edge lasing devices using dye-doped low molar mass liquid crystals in self-organised chiral nematic and blue phases. We show that high Q-factor lasers can be achieved in these materials and demonstrate that a single mode output with a very narrow line width can be readily achievable in well-aligned mono-domain samples. Further, we have found that the performance of the laser, i.e. the slope efficiency and the excitation threshold, are dependent upon the physical parameters of the low molar mass chiral nematic liquid crystals. Specifically, slope efficiencies greater than 60% could be achieved depending upon the materials used and the device geometry employed. We will discuss the important parameters of the liquid crystal host/dye guest materials and device configuration that are needed to achieve such high slope efficiencies. Further we demonstrate how the wavelength of the laser can be tuned using an in-plane electric field in a direction perpendicular to the helix axis via a flexoelectric mechanism as well as thermally using thermochromic effects. We will then briefly outline data on room temperature blue phase lasers and further show how liquid crystal/lenslet arrays have been used to demonstrate 2D laser emission of any desired wavelength. Finally, we present preliminary data on LED/incoherent pumping of RG liquid crystal lasers leading to a continuous wave output. © 2009 SPIE.

Adaptive modally addressed liquid crystal lenses

An adaptive lens, which has variable focus and is rapidly controllable with simple low-power electronics, has numerous applications in optical telecommunications devices, 3D display systems, miniature cameras and adaptive optics. The University of Durham is developing a range of adaptive liquid crystal lenses, and here we describe work on construction of modal liquid crystal lenses. This type of lens was first described by Naumov [1] and further developed by others [24]. In this system, a spatially varying and circularly symmetric voltage profile can be generated across a liquid-crystal cell, generating a lens-like refractive index profile. Such devices are simple in design, and do not require a pixellated structure. The shape and focussing power of the lens can be controlled by the variation of applied electric field and frequency. Results show adaptive lenses operating at optical wavelengths with continuously variable focal lengths from infinity to 70 cm. Switching speeds are of the order of 1 second between focal positions. Manufacturing methods of our adaptive lenses are presented, together with the latest results to the performance of these devices.

Fast-switching phase gratings using in-plane addressed short-pitch polymer stabilized chiral nematic liquid crystals

We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched on and off reversibly in 600 μs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times. © 2011 American Institute of Physics.

Channel selective tunnelling through a nanographene assembly.

We report selective tunnelling through a nanographene intermolecular tunnel junction achieved via scanning tunnelling microscope tip functionalization with hexa-peri-hexabenzocoronene (HBC) molecules. This leads to an offset in the alignment between the energy levels of the tip and the molecular assembly, resulting in the imaging of a variety of distinct charge density patterns in the HBC assembly, not attainable using a bare metallic tip. Different tunnelling channels can be selected by the application of an electric field in the tunnelling junction, which changes the condition of the HBC on the tip. Density functional theory-based calculations relate the imaged HBC patterns to the calculated molecular orbitals at certain energy levels. These patterns bear a close resemblance to the π-orbital states of the HBC molecule calculated at the relevant energy levels, mainly below the Fermi energy of HBC. This correlation demonstrates the ability of an HBC functionalized tip as regards accessing an energy range that is restricted to the usual operating bias range around the Fermi energy with a normal metallic tip at room temperature. Apart from relating to molecular orbitals, some patterns could also be described in association with the Clar aromatic sextet formula. Our observations may help pave the way towards the possibility of controlling charge transport between organic interfaces.

High velocity vortex channeling in vicinal YBCO thin films

We report on electrical transport measurements at high current densities on optimally doped YBa 2Cu 3O 7-δ thin films grown on vicinal SrTiO 3 substrates. Data were collected by using a pulsed-current technique in a four-probe arrangement, allowing to extend the current-voltage characteristics to high supercritical current densities (up to 24 MA cm -2) and high electric fields (more than 20 V/cm), in the superconducting state at temperatures between 30 and 80 K. The electric measurements were performed on tracks perpendicular to the vicinal step direction, such that the current crossed between ab planes, under magnetic field rotated in the plane defined by the crystallographic c axis and the current density. At magnetic field orientation parallel to the cuprate layers, evidence for the sliding motion along the ab planes (vortex channeling) was found. The signature of vortex channeling appeared to get enhanced with increasing electric field, due to the peculiar depinning features in the kinked vortex range. They give rise to a current-voltage characteristics steeper than in the more off-plane rectilinear vortex orientations, in the electric field range below approximately 1 V/cm. Roughly above this value, the high vortex channeling velocities (up to 8.6 km/s) could be ascribed to the flux flow, although the signature of ohmic transport appeared to be altered by unavoidable macroscopic self-heating and hot-electron-like effects. © 2012 Elsevier B.V. All rights reserved.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.