Dynamic optimization of track components to minimize rail corrugation

In this paper, the influence on corrugation of the most significant track parameters has been examined. After this parametric study, the optimization of the track parameters to minimize the undulatory wear growth has been achieved. Finally, the influence of the dispersion of the track and contact parameters on corrugation growth has been studied. A method has been developed to obtain an optimal solution of the track parameters which minimizes corrugation growth, thus ensuring that this solution remains optimum despite dispersion of track parameters and wheel-rail contact uncertainties. This work is based on the computer application RACING (RAil Corrugation INitiation and Growth) which has been developed by the authors to predict rail corrugation features.

Optimization of Off-Null Ellipsometry for Optical Biosensor Applications

The optimization of off-null ellipsometry is described with emphasis on the improvement of resolution for visualizing biomolecule layers. For optical biosensor with layer thickness below 6.5 nm, a numerical simulation for the dependence of resolution on the azimuth settings of polarizer and analyzer is presented first. For comparison, three different resolutions are given at three azimuth settings which are near null and far away from null condition, respectively. Furthermore, the square or linear approximation relationship between the intensity and the layer thickness are also given at these settings. The difference among their accuracy is up to 100 times or so. Experimental results of the biosensor sample verify the optimization.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.