Plasma Assisted Deposition Technique for Synthesis of low Dielectric Constant Polyanisidine Thin Films

Plasma Science, 2002. ICOPS 2002. IEEE Conference Record-Abstracts. The 29th IEEE International Conference on

An Improved Technique for Evolving Wavelet Coefficients for Fingerprint Image Compression

In this paper, an improved technique for evolving wavelet coefficients refined for compression and reconstruction of fingerprint images is presented. The FBI fingerprint compression standard [1, 2] uses the cdf 9/7 wavelet filter coefficients. Lifting scheme is an efficient way to represent classical wavelets with fewer filter coefficients [3, 4]. Here Genetic algorithm (GA) is used to evolve better lifting filter coefficients for cdf 9/7 wavelet to compress and reconstruct fingerprint images with better quality. Since the lifting filter coefficients are few in numbers compared to the corresponding classical wavelet filter coefficients, they are evolved at a faster rate using GA. A better reconstructed image quality in terms of Peak-Signal-to-Noise-Ratio (PSNR) is achieved with the best lifting filter coefficients evolved for a compression ratio 16:1. These evolved coefficients perform well for other compression ratios also.

A Faster 2D Technique for the design of Combinational Digital Circuits Using Genetic Algorithm

Combinational digital circuits can be evolved automatically using Genetic Algorithms (GA). Until recently this technique used linear chromosomes and and one dimensional crossover and mutation operators. In this paper, a new method for representing combinational digital circuits as 2 Dimensional (2D) chromosomes and suitable 2D crossover and mutation techniques has been proposed. By using this method, the convergence speed of GA can be increased significantly compared to the conventional methods. Moreover, the 2D representation and crossover operation provides the designer with better visualization of the evolved circuits. In addition to this, a technique to display automatically the evolved circuits has been developed with the help of MATLAB

Theoretical investigations of an annular elliptical ring microstrip antenna using Green‘s function technique

Analytical expressions for the Green’s function of an annular elliptical ring microstrip antenna (AERMA) are developed and reported. The modal, radiation and input impedance characteristics of the TM, modes are determined from these expressions. The resonant frequencies of odd modes are greater than that of the even modes for all TMnl modes (n = 1, 2, 3, ...) udke elliptical microstrip structures. The radiation pattern and input imedance curves of TMI2 mode on comparison with available experimental result shows good agreement whch provides an independent validation to this technique. The performance of the AERMA is then investigated as a function of thickness and substrate dielectric permittivity.

A New Gridding Technique for High Density Microarray Images Using Intensity Projection Profile of Best Sub Image

As the technologies for the fabrication of high quality microarray advances rapidly, quantification of microarray data becomes a major task. Gridding is the first step in the analysis of microarray images for locating the subarrays and individual spots within each subarray. For accurate gridding of high-density microarray images, in the presence of contamination and background noise, precise calculation of parameters is essential. This paper presents an accurate fully automatic gridding method for locating suarrays and individual spots using the intensity projection profile of the most suitable subimage. The method is capable of processing the image without any user intervention and does not demand any input parameters as many other commercial and academic packages. According to results obtained, the accuracy of our algorithm is between 95-100% for microarray images with coefficient of variation less than two. Experimental results show that the method is capable of gridding microarray images with irregular spots, varying surface intensity distribution and with more than 50% contamination

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N105/cm) were deposited at substrate temperature of 375 °C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375 °C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS2, Sn2S3 were also determined

CuInS2/In2S3 Cells using a Cost-effective Technique: Significance of Precursor Ratios on Cell Parameters

Thin film solar cells having structure CuInS2/In2S3 were fabricated using chemical spray pyrolysis (CSP) technique over ITO coated glass. Top electrode was silver film (area 0.05 cm2). Cu/In ratio and S/Cu in the precursor solution for CuInS2 were fixed as 1.2 and 5 respectively. In/S ratio in the precursor solution for In2S3 was fixed as 1.2/8. An efficiency of 0.6% (fill factor -37.6%) was obtained. Cu diffusion to the In2S3 layer, which deteriorates junction properties, is inevitable in CuInS2/In2S3 cell. So to decrease this effect and to ensure a Cu-free In2S3 layer at the top of the cell, Cu/In ratio was reduced to 1. Then a remarkable increase in short circuit current density was occurred from 3 mA/cm2 to 14.8 mA/cm2 and an efficiency of 2.13% was achieved. Also when In/S ratio was altered to 1.2/12, the short circuit current density increased to 17.8 mA/cm2 with an improved fill factor of 32% and efficiency remaining as 2%. Thus Cu/In and In/S ratios in the precursor solutions play a crucial role in determining the cell parameters

Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique

This work projects photoluminescence (PL) as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO) thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP) by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE) at 380 nm and the deep level emission (DLE) at ∼500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE ( DLE/ NBE) can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of DLE/ NBE and resistivity for samples prepared under different deposition conditions is similar in nature. DLE/ NBE was always less than resistivity by an order for all samples.Thus from PL measurements alone, the order of resistivity of the samples can be estimated.

A STUDY OF THE TECHNIQUE OF THE HINDI DRAMA POST PRASAD PERIOD (1935 - 1965)

Hindi

THE PDETICAL WORKS DF GIRI-IA KUMAR MATHUR: SENSIBILITY AND TECHNIQUE

HINDI

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

A pilot investigation of the relationship between climate variability and milk compounds under the bootstrap technique

This study analyzes the linear relationship between climate variables and milk components in Iran by applying bootstrapping to include and assess the uncertainty. The climate parameters, Temperature Humidity Index (THI) and Equivalent Temperature Index (ETI) are computed from the NASA-Modern Era Retrospective-Analysis for Research and Applications (NASA-MERRA) reanalysis (2002–2010). Milk data for fat, protein (measured on fresh matter bases), and milk yield are taken from 936,227 milk records for the same period, using cows fed by natural pasture from April to September. Confidence intervals for the regression model are calculated using the bootstrap technique. This method is applied to the original times series, generating statistically equivalent surrogate samples. As a result, despite the short time data and the related uncertainties, an interesting behavior of the relationships between milk compound and the climate parameters is visible. During spring only, a weak dependency of milk yield and climate variations is obvious, while fat and protein concentrations show reasonable correlations. In summer, milk yield shows a similar level of relationship with ETI, but not with temperature and THI. We suggest this methodology for studies in the field of the impacts of climate change and agriculture, also environment and food with short-term data.

A Hierarchical Cache Coherent Protocol

As the number of processors in distributed-memory multiprocessors grows, efficiently supporting a shared-memory programming model becomes difficult. We have designed the Protocol for Hierarchical Directories (PHD) to allow shared-memory support for systems containing massive numbers of processors. PHD eliminates bandwidth problems by using a scalable network, decreases hot-spots by not relying on a single point to distribute blocks, and uses a scalable amount of space for its directories. PHD provides a shared-memory model by synthesizing a global shared memory from the local memories of processors. PHD supports sequentially consistent read, write, and test- and-set operations. This thesis also introduces a method of describing locality for hierarchical protocols and employs this method in the derivation of an abstract model of the protocol behavior. An embedded model, based on the work of Johnson[ISCA19], describes the protocol behavior when mapped to a k-ary n-cube. The thesis uses these two models to study the average height in the hierarchy that operations reach, the longest path messages travel, the number of messages that operations generate, the inter-transaction issue time, and the protocol overhead for different locality parameters, degrees of multithreading, and machine sizes. We determine that multithreading is only useful for approximately two to four threads; any additional interleaving does not decrease the overall latency. For small machines and high locality applications, this limitation is due mainly to the length of the running threads. For large machines with medium to low locality, this limitation is due mainly to the protocol overhead being too large. Our study using the embedded model shows that in situations where the run length between references to shared memory is at least an order of magnitude longer than the time to process a single state transition in the protocol, applications exhibit good performance. If separate controllers for processing protocol requests are included, the protocol scales to 32k processor machines as long as the application exhibits hierarchical locality: at least 22% of the global references must be able to be satisfied locally; at most 35% of the global references are allowed to reach the top level of the hierarchy.