Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m

Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 mum are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 mum.

Side radical influence on the nonlinear optical properties and thermal stability of poled polymer films

Films of polyetherketone doped with the chromophores Disperse Red 1 (DR1) and Disperse Red 13 (DR13) were prepared by spin-coating method. By the in situ Second-harmonic Generation (SHG) signal intensity measurement, the optimal poling temperatures were obtained. For the investigated polyetherketone polymer doped with DR1 (DR1/PEK-c) and polyetherketone polymer doped with DR13 (DR13/PEK-c) films, the optimal poling temperatures were 150degreesC and 140degreesC, respectively. Under the optimal poling conditions, the high second-order nonlinear optical coefficient chi(33)((2)) = 11.02 pm/V has been obtained for the DR1/PEK-c; and for DR13/PEK-c at the same conditions the coefficient is 17.9 pm/V. The SHG signal intensity DR1/PEK-c could maintain more than 80% of its initial value when the temperature was under 100degreesC, and the SHG signal intensity of the DR13/PEK-c could maintain more than 80% of its initial value when the temperature was under 135degreesC. (C) 2002 Kluwer Academic Publishers.

Assembly of side-functional monomers with inorganic nanometer particles

Monomers of methacrylate with various pi -conjugated pendants were designed and prepared in our laboratory, The monomer with suitable end-group was successfully assembled with nano-scale inorganic particles to form an orderly-aligned structure that showed special optical properties, both absorption and emission band were much red-shifted compared with the monomer, A new type of organic/inorganic hybrid materials was obtained by in situ polymerization of the assembly, The hybrid materials could also show special optical properties as the assembly, This might open a new route to tune the emission color.

Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.

Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves

We present detail design considerations and simulation results of a forward biased carrier injection p-i-n modulator integrated on SOI rib waveguides. To minimize the free carrier absorption loss while keeping the comparatively small lateral dimensions of the modulator as required for high speed operation, we proposed two structural improvements, namely the double ridge (terrace ridge) structure and the isolating grooves at both sides of the double ridge. With improved carrier injection and optical confinement structure, the simulated modulator response time is in sub-ns range and absorption loss is minimized.

A New Technique for Side Pumping of Double-Clad Fiber Lasers

We report a new technique, called SAP, for side pumping of double-clad, rare-earth-doped fiber lasers using fiber-coupled pump sources. The highest coupling efficiency can even exceed 92% in theory with this structure.

LD side-pumped high beam quality passive Q-switched and mode-locked Nd:YAG laser based on SESAM

We report a LD side-pumped fundamental-mode (Mx(2) = 1.35 and My(2) = 1.27) passive Q-switched and mode-locked Nd:YAG laser based on a semiconductor saturable absorber mirror (SESAM). At a pump current of 12.5 A, the average output power of 5.68 W with 80 kHz repetition rate and 2 mu s pulse width of the Q-switched envelope was generated. The repetition rate of the mode-locked pulse within the Q-switched envelope of 88 MHz was achieved.

Design,Fabrication,and Testing of Single-Side Alignment of 16×0.8nm Arrayed-Waveguide Grating

A novel design of 100GHz-spaced 16channel arrayed-waveguide grating (AWG) based on silica-on-silicon chip is reported.AWG is achieved by adding a Y-branch to the AWG and arranging the input/output channel in a neat row,so the whole configuration can be aligned and packaged using only one fiber-array.This configuration can decrease the device's size,enlarge the minimum radius of curvature,save time on polishing and alignment,and reduce the chip's fabrication cost.

Design of side-pumped Nd : YAG lasers

Design of the typical laser diode side-pumped Nd:YAG rod system has been discussed using the conventional ray tracing method in this paper. Firstly introduce two basic matrices, refractional and translational matrix, described the transmission of nonparaxial light ray in the medium without concerning the absorption of light. And then, using those matrices, analyze the distribution of pump light in the crystal respectively under the condition of directly pumped system and indirectly pumped system with a cylindrical quartz rod as focusing lens. From the result of simulation, we compare the advantage and disadvantage of the two pumped method, and mainly consider how to select the diameter of the focus lens and cooling tube, indicate the effect of deionized water and cooling tube have on the pump light distribution in the active material. At last, make some conclusions about the side-pumped Nd:YAG laser system.

LD Side-Pumped Passive Mode-Locked TEM00 Nd:YAG Laser Based on SESAM

We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

双面二维硅微条探测器的沾污失效分析及修复；Contamination failure analysis and repairing for double side two dimensional silicon microstrip detectors

硅微条探测器通过微电子工艺制作,易因沾污导致性能下降甚至失效;裸露的键合引线,也易因机械力形成隐性或显性失效。对上述现象的研究可用于修复、维护探测器并在设计和工艺流程中改进其性能。本文通过光学、电气手段分析其结构和制作工艺流程,根据沾污性质在不同条件下清洗探测器,中测后根据芯片图形、封装方式和电气要求修复探测器,最后采用同位素α能谱测试修复效果。对一块沾污后失效(无法加载偏压)的硅微条清洗后在大气环境,N面接地,P面加载负偏压条件下进行了测试,结果显示:170 V全耗尽,平均漏电流2.94μA,5.486 MeV的α峰能量分辨率约1.28%。失效键合所在条的另一面各条能谱观测到假峰,键合修复后消除。因沾污失效的硅微条探测器经过合适的清洗、修复,部分可以恢复性能,但清洗对表面和结构有损伤,须谨慎。另外,键合失效后,因信号不能引出导致的电荷积累会通过电容效应影响其它灵敏区。文章提示,探测器应存放于洁净,恒温,低湿度,避光,避强电磁干扰的环境,以提高能量和位置分辨率,并增加工作稳定性,延长使用寿命。