Multi-physics self-consistent modeling in nanotechnological applications: quantum dots and quantum-well lasers

This paper reports a self-consistent Poisson-Schr¨odinger scheme including the effects of the piezoelectricity, the spontaneous polarization and the charge density on the electronic states and the quasi-Fermi level energy in wurtzite type semiconductor heterojunction and quantum-laser.

Classical integrability in the BTZ black hole

Using the fact the BTZ black hole is a quotient of AdS(3) we show that classical string propagation in the BTZ background is integrable. We construct the flat connection and its monodromy matrix which generates the non-local charges. From examining the general behaviour of the eigen values of the monodromy matrix we determine the set of integral equations which constrain them. These equations imply that each classical solution is characterized by a density function in the complex plane. For classical solutions which correspond to geodesics and winding strings we solve for the eigen values of the monodromy matrix explicitly and show that geodesics correspond to zero density in the complex plane. We solve the integral equations for BMN and magnon like solutions and obtain their dispersion relation. We show that the set of integral equations which constrain the eigen values of the monodromy matrix can be identified with the continuum limit of the Bethe equations of a twisted SL(2, R) spin chain at one loop. The Landau-Lifshitz equations from the spin chain can also be identified with the sigma model equations of motion.

Classical screw theory: A fresh look using dual eigenvalue approach

This paper presents a novel algebraic formulation of the central problem of screw theory, namely the determination of the principal screws of a given system. Using the algebra of dual numbers, it shows that the principal screws can be determined via the solution of a generalised eigenproblem of two real, symmetric matrices. This approach allows the study of the principal screws of the general screw systems associated with a manipulator of arbitrary geometry in terms of closed-form expressions of its architecture and configuration parameters. The formulation is illustrated with examples of practical manipulators.

Exploiting Programmable Network Interfaces for Parallel Query Execution in Workstation Clusters

Workstation clusters equipped with high performance interconnect having programmable network processors facilitate interesting opportunities to enhance the performance of parallel application run on them. In this paper, we propose schemes where certain application level processing in parallel database query execution is performed on the network processor. We evaluate the performance of TPC-H queries executing on a high end cluster where all tuple processing is done on the host processor, using a timed Petri net model, and find that tuple processing costs on the host processor dominate the execution time. These results are validated using a small cluster. We therefore propose 4 schemes where certain tuple processing activity is offloaded to the network processor. The first 2 schemes offload the tuple splitting activity - computation to identify the node on which to process the tuples, resulting in an execution time speedup of 1.09 relative to the base scheme, but with I/O bus becoming the bottleneck resource. In the 3rd scheme in addition to offloading tuple processing activity, the disk and network interface are combined to avoid the I/O bus bottleneck, which results in speedups up to 1.16, but with high host processor utilization. Our 4th scheme where the network processor also performs apart of join operation along with the host processor, gives a speedup of 1.47 along with balanced system resource utilizations. Further we observe that the proposed schemes perform equally well even in a scaled architecture i.e., when the number of processors is increased from 2 to 64

Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate

InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations of InN QDs were examined by x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to the bulk InN, arising from size dependent quantum confinement effect. The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of InN QDs were studied in a metal-semiconductor-metal configuration in the temperature range of 80-300K. The I-V characteristics of lateral grown InN QDs were explained by using the trap model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651762]

SOS films and interfaces: chemical aspects

The possible chemical reactions that take place during the growth of single crystal films of silicon on sapphire (SOS) are analyzed thermodynamically. The temperature for the growth of good quality epitaxial films is dependent on the extent of water vapor present in the carrier gas. The higher the water vapor content the higher the temperature needed to grow SOS films. Due to the interaction of silicon with sapphire at elevated temperatures, SOS films are doped with aluminum. The extent of doping is dependent on the conditions of film growth. The doping by aluminum from the substrate increases with increasing growth temperatures and decreasing growth rates. The equilibrium concentrations of aluminum at the silicon-sapphire interface are calculated as a function of deposition temperature, assuming that SiO2 or Al6Si2O13 are the products of reaction. It is most likely that the product could be a solid solutio n of Al2O3 in SiO2. The total amount of aluminum released due to the interaction between silicon and sapphire will account only for the formation of not more than one monolayer of reaction product unless the films are annealed long enough at elevated temperatures. This value is in good agreement with the recently reported observations employing high resolution transmission electron microscopy.

Tension-Softening Properties for Concrete-Concrete Interfaces

The tension-softening parameters for different concrete-concrete interfaces are determined using the bimaterial cracked hinge model. Beams of different sizes having a jointed interface between two different strengths of concrete are tested under three-point bending (TPB). The load versus crack mouth opening displacement (CMOD) results are used to obtain the stress-crack opening relation through an inverse analysis. In addition, the fracture energy, tensile strength, and modulus of elasticity are also computed from the inverse analysis. The fracture properties are used in the nonlinear fracture mechanics analysis of a concrete patch-repaired beam to determine its load-carrying capacity when repaired with concrete of different strengths.

Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

Microscopic study of the 2/5 fractional quantum Hall edge

This paper reports on our study of the edge of the 2/5 fractional quantum Hall state, which is more complicated than the edge of the 1/3 state because of the presence of edge sectors corresponding to different partitions of composite fermions in the lowest two Lambda levels. The addition of an electron at the edge is a nonperturbative process and it is not a priori obvious in what manner the added electron distributes itself over these sectors. We show, from a microscopic calculation, that when an electron is added at the edge of the ground state in the [N(1), N(2)] sector, where N(1) and N(2) are the numbers of composite fermions in the lowest two Lambda levels, the resulting state lies in either [N(1) + 1, N(2)] or [N(1), N(2) + 1] sectors; adding an electron at the edge is thus equivalent to adding a composite fermion at the edge. The coupling to other sectors of the form [N(1) + 1 + k, N(2) - k], k integer, is negligible in the asymptotically low-energy limit. This study also allows a detailed comparison with the two-boson model of the 2/5 edge. We compute the spectral weights and find that while the individual spectral weights are complicated and nonuniversal, their sum is consistent with an effective two-boson description of the 2/5 edge.

Time-dependent transitions with time-space noncommutativity and its implications in quantum optics

We study the time-dependent transitions of a quantum-forced harmonic oscillator in noncommutative R(1,1) perturbatively to linear order in the noncommutativity theta. We show that the Poisson distribution gets modified, and that the vacuum state evolves into a `squeezed' state rather than a coherent state. The time evolutions of uncertainties in position and momentum in vacuum are also studied and imply interesting consequences for modeling nonlinear phenomena in quantum optics.

Simple theoretical analysis of the Fowler-Nordheim field emission from microstructures and quantum wires of optoelectronic materials

We present a simplified theoretical formulation of the Fowler-Nordheim field emission (FNFE) under magnetic quantization and also in quantum wires of optoelectronic materials on the basis of a newly formulated electron dispersion law in the presence of strong electric field within the framework of k.p formalism taking InAs, InSb, GaAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x) As(y)P(1-y) lattice matched to InP as examples. The FNFE exhibits oscillations with inverse quantizing magnetic field and electron concentration due to SdH effect and increases with increasing electric field. For quantum wires the FNFE increases with increasing film thickness due to the existence van-Hove singularity and the magnitude of the quantum jumps are not of same height indicating the signature of the band structure of the material concerned. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the field current varies in various manners with all the variables in all the limiting cases as evident from all the curves, the rates of variations are totally band-structure dependent. Under certain limiting conditions, all the results as derived in this paper get transformed in to well known Fowler-Nordheim formula. (C) 2011 Elsevier Ltd. All rights reserved.

Experimental implementation of quantumUlam’s problem in a nuclear magnetic resonance quantum information processor

The Ulam’s problem is a two person game in which one of the player tries to search, in minimum queries, a number thought by the other player. Classically the problem scales polynomially with the size of the number. The quantum version of the Ulam’s problem has a query complexity that is independent of the dimension of the search space. The experimental implementation of the quantum Ulam’s problem in a Nuclear Magnetic Resonance Information Processor with 3 quantum bits is reported here.