920 resultados para Amplifier


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Detailed numerical investigations are undertaken of wavelength reused bidirectional transmission of adaptively modulated optical OFDM (AMOOFDM) signals over a single SMF in a colorless WDM-PON incorporating a semiconductor optical amplifier (SOA) intensity modulator and a reflective SOA (RSOA) intensity modulator in the optical line termination and optical network unit, respectively. A comprehensive theoretical model describing the performance of such network scenarios is, for the first time, developed, taking into account dynamic optical characteristics of SOA and RSOA intensity modulators as well as the effects of Rayleigh backscattering (RB) and residual downstream signal-induced crosstalk. The developed model is rigorously verified experimentally in RSOA-based real-time end-to-end OOFDM systems at 7.5 Gb/s. It is shown that the RB noise and crosstalk effects are dominant factors limiting the maximum achievable downstream and upstream transmission performance. Under optimum SOA and RSOA operating conditions as well as practical downstream and upstream optical launch powers, 10 Gb/s downstream and 6 Gb/s upstream over 40 km SMF transmissions of conventional double sideband AMOOFDM signals are feasible without utilizing in-line optical amplification and chromatic dispersion compensation. In particular, the aforementioned transmission performance can be improved to 23 Gb/s downstream and 8 Gb/s upstream over 40 km SMFs when single sideband subcarrier modulation is adopted in the downstream systems.

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The 7.5-Gb/s real-time end-to-end optical orthogonal frequency-division- multiplexing (OOFDM) transceivers incorporating variable power loading on each individual subcarrier are demonstrated experimentally using a live-optimized reflective semiconductor optical amplifier intensity modulator having a modulation bandwidth as narrow as 1 GHz. Real-time OOFDM signal transmission at 7.5 Gb/s over 25-km standard single-mode fiber is achieved across the $C$-band in simple intensity modulation and direct detection systems without in-line optical amplification and dispersion compensation. © 2006 IEEE.

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This paper presents an improvement of an IGBT gate drive implementing Active Voltage Control (AVC), and investigates the impact of various parameters affecting its performance. The effects of the bandwidths of various elements and the gains of AVC are shown in simulation and experimentally. Also, the paper proposes connecting a small Active Snubber between the IGBT collector and its gate integrated within the AVC. The effect of this snubber on enhancing the stability of the gate drive is demonstrated. It will be shown that using a wide bandwidth operational amplifier and integrating the Active Snubber within the gate drive reduces the minimum gate resistor required to achieve stability of the controller. Consequently, the response time of the IGBT to control signals is significantly reduced, the switching losses then can be minimised and, hence, the performance of gate drive as whole is improved. This reflects positively on turn-off and turn-on transitions achieving voltage sharing between the IGBTs connected in series to construct a higher voltage switch, making series IGBTs a feasible practice. ©2008 IEEE.

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The propagation of ultrashort pulses in a traveling wave semiconductor amplifier is considered. It is demonstrated that the effective polarization relaxation time, which determines the coherence of the interaction of pulses within the medium, strongly depends on its optical gain. As a result, it is shown that at large optical gains the coherence time can exceed the transverse relaxation time T2 by an order of magnitude, this accounting for the strong femtosecond superradiant pulse generation commonly observed in semiconductor laser structures. © 2012 Elsevier B.V. All rights reserved.

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This paper analyzes the forced response of swirl-stabilized lean-premixed flames to acoustic forcing in a laboratory-scale stratified burner. The double-swirler, double-channel annular burner was specially designed to generate acoustic velocity oscillations and radial fuel stratification at the inlet of the combustion chamber. Temporal oscillations of equivalence ratio along the axial direction are dissipated over a long distance, and therefore the effects of time-varying fuel/air ratio on the flame response are not considered. Simultaneous measurements of inlet velocity and heat release rate oscillations were made using a hot wire anemometer and photomultiplier tubes with narrowband OH*/CH* interference filters. Time-averaged CH* chemiluminescence intensities were measured using an intensified CCD camera. Results show that flame stabilization mechanisms vary depending on stratification ratio for a constant global equivalence ratio. For a uniformly premixed condition, an enveloped M-shaped flame is observed. For stratified conditions, however, a dihedral V-flame and a detached flame are developed for outer stream and inner stream fuel enrichment cases, respectively. Flame transfer function (FTF) measurement results indicate that a V-shaped flame tends to damp incident flow oscillations, while a detached flame acts as a strong amplifier relative to the uniformly premixed condition. The phase difference of FTF increases in the presence of stratification. More importantly, the dynamic characteristics obtained from the forced stratified flame measurements are well correlated with unsteady flame behavior under limit-cycle pressure oscillations. The results presented in this paper provide insight into the impact of nonuniform reactant stoichiometry on combustion instabilities, which has not been well explored to date. Copyright © 2011 by ASME.

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The modelling of the non-linear behaviour of MEMS oscillators is of interest to understand the effects of non-linearities on start-up, limit cycle behaviour and performance metrics such as output frequency and phase noise. This paper proposes an approach to integrate the non-linear modelling of the resonator, transducer and sustaining amplifier in a single numerical modelling environment so that their combined effects may be investigated simultaneously. The paper validates the proposed electrical model of the resonator through open-loop frequency response measurements on an electrically addressed flexural silicon MEMS resonator driven to large motional amplitudes. A square wave oscillator is constructed by embedding the same resonator as the primary frequency determining element. Measurements of output power and output frequency of the square wave oscillator as a function of resonator bias and driving voltage are consistent with model predictions ensuring that the model captures the essential non-linear behaviour of the resonator and the sustaining amplifier in a single mathematical equation. © 2012 IEEE.

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We present the first monolithically integrated semiconductor pulse source consisting of a mode-locked laser diode, Mach-Zehnder pulse picker, and semiconductor optical amplifier. Pairs of 5.6 ps pulses are generated at a 250 MHz repetition rate. © 2012 OSA.

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Application of High Temperature Superconducting (HTS) has been increasingly popular since the new superconducting materials were discovered. This paper presents a new high-precision digital lock-in measurement technique which is used for measuring critical current and AC loss of the 2nd Generation HTS tape. Using a lock-in amplifier and nano-voltage meter, we can resolve signals at nano-volt level, while using a specially designed compensation coil we can cancel out inductive by adjusting the coil inductance. Furthermore, a finer correction for the inductive component can be achieved by adjusting the reference phase of the lock-in amplifier. The critical current and AC loss measurement algorithms and hardware layout are described and analyzed, and results for both numerical and experimental data under varieties of frequencies are presented. © 2008 SICE.

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We present a mathematical model of a microelectromechanical system (MEMS) oscillator that integrates the nonlinearities of the MEMS resonator and the oscillator circuitry in a single numerical modeling environment. This is achieved by transforming the conventional nonlinear mechanical model into the electrical domain while simultaneously considering the prominent nonlinearities of the resonator. The proposed nonlinear electrical model is validated by comparing the simulated amplitude¿frequency response with measurements on an open-loop electrically addressed flexural silicon MEMS resonator driven to large motional amplitudes. Next, the essential nonlinearities in the oscillator circuit are investigated and a mathematical model of a MEMS oscillator is proposed that integrates the nonlinearities of the resonator. The concept is illustrated for MEMS transimpedance-amplifier-based square-wave and sine-wave oscillators. Closed-form expressions of steady-state output power and output frequency are derived for both oscillator models and compared with experimental and simulation results, with a good match in the predicted trends in all three cases. © 1986-2012 IEEE.

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An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 (α is the small-signal gain and L is the amplifier length) leads to suppression of phase relaxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron - hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.

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Three interferon regulatory factor (IRF) genes, CaIRF-1, CaIRF-2 and CaIRF-7, and their promoters of snakehead (Channa argus) were cloned and characterized. The CaIRF-1 gene consists of ten exons, spans 4.3 kb and encodes a putative peptide of 299 aa. The CaIRF-2 gene consists of nine exons, spans 8 kb and encodes a putative peptide of 328 aa. The gene organizations of CaIRF-1 and CaIRF-2 are very similar to that of human IRF-1 and IRF-2 except more compact. Comparison of exon-intron organization of the two genes indicated a common evolutionary structure, notably within the exons encoding the DNA binding domain (DBD) of the two factors. The CaIRF-7 gene spans 4.1 kb and encodes a putative peptide of 437 aa. However, the gene organization of CaIRF-7 consisting of ten exons is different to human IRF-7a gene which has an intron in 5' UTR. Three CaIRFs share homology in N-terminal encompassing the DBD that contains a characteristic repeat of tryptophan residues. The promoters of CaIRF-1 and CaIRF-2 genes contain the conserved sites for NF-kappa B and Sp1. The gamma-IFN activation sites (GAS) were found in the promoters of CaIRF-1 and CaIRF-7. The promoter of CaIRF-7 contains conserved interferon stimulating response element (ISRE) which is characteristic of IFN-induced gene promoter, and suggests that there also exist intracellular amplifier circuit in fish IFN signal pathway. Moreover, the element GAAANN oriented in both directions is repeated in CaIRF promoter regions, which confers to further inducibility by IFN. The constitutive expression of CaIRF genes were found to increase obviously in response to induction by the known IFN-inducer poly I:C. (c) 2008 Published by Elsevier Ltd.

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The variety of laser systems available to industrial laser users is growing and the choice of the correct laser for a material target application is often based on an empirical assessment. Industrial master oscillator power amplifier systems with tuneable temporal pulse shapes have now entered the market, providing enormous pulse parameter flexibility in an already crowded parameter space. In this paper, an approach is developed to design interaction parameters based on observations of material responses. Energy and material transport mechanisms are studied using pulsed digital holography, post process analysis techniques and finite-difference modelling to understand the key response mechanisms for a variety of temporal pulse envelopes incident on a silicon (1/1/1) substrate. The temporal envelope is shown to be the primary control parameter of the source term that determines the subsequent material response and the resulting surface morphology. A double peak energy-bridged temporal pulse shape designed through direct application of holographic imaging data is shown to substantially improve surface quality. © 2014 IEEE.

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A new class of 16-ary Amplitude Phase Shift Keying (APSK) coded modulations deemed double-ring PSK modulations best suited for (satellite) nonlinear channels is proposed. Constellation parameters optimization has been based on geometric and information-theoretic considerations. Furthermore, pre- and post-compensation techniques to reduce the nonlinearity impact have been examined. Digital timing clock and carrier phase have been derived and analyzed for a Turbo coded version of the same new modulation scheme. Finally, the performance of state-of the art Turbo coded modulation for this new 16-ary digital modulation has been investigated and compared to the known TCM schemes. It is shown that for the same coding scheme, double-ring APSK modulation outperforms classical 16-QAM and 16-PSK over a typical satellite nonlinear channel due to its intrinsic robustness against the High Power Amplifier (HPA) nonlinear characteristics. The new modulation is shown to be power- and spectrally-efficient, with interesting applications to satellite communications. © 2002 by the American Institute of Aeronautics and Astronautics, Inc.

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Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

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The hole-mediated ferromagnetism in (In,Mn)As quantum dots is investigated using the k center dot p method and the mean field model. It is found that the (In,Mn)As quantum dot can be ferromagnetic at room temperature when there is one hole in the dot. For the spherical quantum dots, the Curie temperature decreases as the diameter increases, and increases as the effective composition of magnetic ions increases. It is interesting to find that the (In,Mn)As oblate quantum dot has highly anisotropic Zeeman splitting and ferromagnetism due to the spin-orbit coupling effect, which can be used as an uniaxial spin amplifier. (c) 2008 American Institute of Physics.