Sincronia das bolsas de valores

This study aims to analyze various index stock exchanges around the world, with mathematical methods, analyzing the Product Distribution function (PDF), cumulative distribution and correlation. It is thought that the world economy is connected, as if the financial markets were a network, where the fluctuation of a market generates a variation on another and another, creating a pattern, that this change will affect the entire network, thus creating what we might call the domino effect. From this we intend to study, using as a basis the main index of the major stock exchanges around the world the relationship they have with each other, analyzing the influence and correlation that generates this effect, showing that markets are connected and influence each other. We can see this effect in the crisis of 2008, where the U.S. market from one moment to the other was shaken, affecting the whole world in a few days, creating effects that are felt in the present day

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Biocellulose-based flexible magnetic paper

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Laser frequency measurements and spectroscopic assignments of optically pumped 13CH3OH

A three-laser heterodyne system was used to measure the frequencies of twelve optically pumped laser emissions from 13CH3OH in the far-infrared (FIR) region. These emissions, ranging from 54 to 142 μm, are reported with fractional uncertainties up to ±2 × 10-7 along with their polarization relative to the CO2 pump. Using the 9P32 and 10R14 CO2 lines, complete spectroscopic assignments for two laser systems were confirmed.

Frequency upconversion involving triads and quartets of ions in a Pr3+/Nd3+ codoped fluoroindate glass

Frequency upconversion (UC) processes involving energy transfer (ET) among Nd 3+ and Pr 3+ ions in a fluoroindate glass are reported. In a first experiment, the excitation of Pr 3+ [transition 3H 4→ 1D 2] and of Nd 3+ [transition 4I 9/2→( 2G 7/2+ 4G 5/2)] was achieved with a dye laser operating in the 575-590 nm range. In a second experiment, the Nd 3+ ions were excited with the second harmonic of a Nd: YAG laser at 532 nm. The ET processes leading to UC in both experiments were studied by monitoring the blue fluorescence decay at 480 nm due to the transition 3P 0→ 3H 4 in Pr 3+. In the more relevant UC process, quartets of ions (Nd-Nd-Pr-Pr) are excited due to absorption of three laser photons by two Nd 3+ ions which transfer their energy to two Pr 3+ ions. Each Pr 3+ ion promoted to the 3P 0 level decays to the ground state emitting one photon in the blue region. This conclusion was achieved investigating the dependence of the UC fluorescence intensity as a function of laser intensity, samples concentrations, and temporal behavior of the UC signal. Other UC processes involving nonisoionic groups of three ions are also reported. © 2002 American Institute of Physics.

A quantitative analysis of the polarization reversal in the 73 mol % vinylidene fluoride-27 mol % trifluorethylene copolymer

We show that a time-dependent, effective-medium approximation essentially explains the time behavior of the polarization reversals obtained in doped copolymers of vinylidene fluoride and trifluorethylene at 60°C by Ieda, Fukada, and Wada [J. Appl. Phys. 64, 2026 (1988)], who attributed the observed effects to charge accumulation at the boundaries of the permanently polarized crystallites. Moreover, the results seem to indicate that some hindrance (perhaps of mechanical origin) opposes the action of the switching electric field.

Crystallization process of amorphous GaSb films studied by Raman spectroscopy

Thermal annealings of amorphous gallium antimonide films were accompanied using Raman spectroscopy, both for stoichiometric and nonstoichiometric compositions. The films were prepared by flash evaporation on silicon substrates. Structural changes were induced by the heat treatments: an increasing degree of crystallization as a function of the annealing temperature is observed. Sb clusters are found to crystallize before GaSb does, and the dependence of the corresponding Raman peak intensity with the annealing temperature (occurring in two regimes) is explained. A mechanism for the crystallization of the amorphous GaSb is proposed, based on the prior migration of the Sb excess outside the GaSb region to be crystallized. © 1995 American Institute of Physics.

Características estruturais de aerogéis hidrofílicos e hidrofóbicos de sílica modificados com Dodecil Sulfato de Sódio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influence of polyaniline and phthalocyanine hole-transport layers on the electrical performance of light-emitting diodes using MEH-PPV as emissive material

The influence of layer-by-layer films of polyaniline and Ni-tetrasulfonated phthalocyanine (PANI/Ni-TS-Pc) on the electrical performance of polymeric light-emitting diodes (PLED) made from (poly[2-methoxy-5-(2`-ethyl-hexyloxy)-1,4-phenylene vinylene]) (MEH-PPV) is investigated by using current versus voltage measurements and impedance spectroscopy. The PLED is composed by a thin layer of MEH-PPV sandwiched between indium tin oxide (ITO) and aluminum electrodes, resulting in the device structure ITO/(PANI/Ni-TS-Pc)(n)/MEH-PPV/Al, where n stands for the number of PANI/Ni-TS-Pc bilayers. The deposition of PANI/Ni-TS-Pc leads to a decrease in the driving voltage of the PLEDs, which reaches a minimum when n = 5 bilayers. In addition, impedance spectroscopy data reveal that the PLED impedance decreases as more PANI/Ni-TS-Pc bilayers are deposited. The PLED structure is further described by an equivalent circuit composed by two R-C combinations, one for the bulk and other for the interface components, in series with a resistance originated in the ITO contact. From the impedance curves, the values for each circuit element is determined and it is found that both, bulk and interface resistances are decreased upon PANI/Ni-TS-Pc deposition. The results indicate that PANI/NiTS-Pc films reduce the contact resistance at ITO/MEH-PPV interface, and for that reason improve the hole-injection within the PLED structure. (c) 2007 Elsevier B.V. All rights reserved.

Polymer Light Emitting Diode Using PFT-Poly(9,9 `-n-dihexil-2,7-fluorenodiilvinylene-alt-2,5thiophene)

The development of new electroluminescence polymers for specific colour tuning in Polymer Light Emitting Devices (PLEDs) is currently one of the most important fields for organic electronics. This work reports a synthesis of a new electroluminescent polymer and the concomitant test as PLED emissive layer. The polymer, synthesised from fluorene, is poly(9,9`-n-dihexil-2,7-fluorenodiilvinylene-alt-2,5thiophene) or PFT The luminescence shows large bands with maxima around 480 nm in absorption and 560 nm in emission. The device was made in a three layer structure, with PEDOT:PSS as hole transport layer, PFT as emissive layer and butyl-PBD as electron transport layer. The electroluminescence spectrum shows a strong band peaked at 540 nm. For an applied voltage of 12 Volt, the brightness at normal angle of viewing is near 10 cd/m(2) and the luminous efficiency is of 0.01 lm/W. A discussion about carrier transport and the electroluminescence properties is made.

Development and characterization of light-emitting diodes (LEDs) based on ruthenium complex single layer for transparent displays

In this work, two ruthenium complexes, [Ru(bpy)(3)](PF6)(2) and [Ru(ph2phcn)(3)](PF6)(2) in poly(inethylinethacrylate) matrix were employed to build single-layer light-emitting electrochemical cells by spin coating on indium tin oxide substrate. In both cases the electroluminescence spectra exhibit a relatively broad band with maxima near to 625 rim and CIE (x, y) color coordinates of (0.64, 0.36), which are comparable with the photoluminescence data in the same medium. The best result was obtained with the [Ru(bpy)(3)](PF6)(2) device where the optical output power approaches 10 mu W at the band maximum with a wall-plug efficiency higher than 0.03%. The lowest driving voltage is about 4 V for an electrical current of 20 mA. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparative degradation of ZnO- and SnO(2)-based polycrystalline non-ohmic devices by current pulse stress

The degradation behaviour of SnO(2)-based varistors (SCNCr) due to current pulses (8/20 mu s) is reported here for the first time in comparison with the ZnO-based commercial varistors (ZnO). Puncturing and/or cracking failures were observed in ZnO-based varistors possessing inferior thermo-mechanical properties in comparison with that found in a SCNCr system free of failures. Both systems presented electric degradation related to the increase in the leakage current and decrease in the electric breakdown field, non-linear coefficient and average value of the potential barrier height. However, it was found that a more severe degradation occurred in the ZnO-based varistors concerning their non-ohmic behaviour, while in the SCNCr system, a strong non-ohmic behaviour remained after the degradation. These results indicate that the degradation in the metal oxide varistors is controlled by a defect diffusion process whose rate depends on the mobility, the concentration of meta-stable defects and the amount of electrically active interfaces. The improved behaviour of the SCNCr system is then inferred to be associated with the higher amount of electrically active interfaces (85%) and to a higher energy necessary to activate the diffusion of the specific defects.

Tunable second harmonic generation by phase-modulated ultrashort laser pulses

We report on the generation of tunable light around 400 nm by frequency-doubling ultrashort laser pulses whose spectral phase is modulated by a sum of sinusoidal functions. The linewidth of the ultraviolet band produced is narrower than 1 nm, in contrast to the 12 nm linewidth of the non-modulated incident spectrum. The influence of pixellation of the liquid crystal spatial light modulator on the efficiency of the phase-modulated second harmonic generation is discussed.

Shape Changes of Pt Nanoparticles Induced by Deposition on Mesoporous Silica

Polyvinylpyrollidone (PVP)-capped platinum nanoparticles (NPs) are found to change shape from spherical to flat when deposited on mesoporous silica substrates (SBA-15). Transmission electron microscopy (TEM), small-angle X-ray scattering (SAXS), and extended X-ray absorption fine structure (EXAFS) analyses are used in these studies. The SAXS results indicate that, after deposition, the 2 nm NPs have an average gyration radius 22% larger than in solution, while the EXAFS measurements indicate a decrease in first neighbor co-ordination number from 9.3 to 7.4. The deformation of these small capped NPs is attributed to interactions with the surface of the SBA-15 support, as evidenced by X-ray absorption near-edge structure (XANES).

Local structure around Fe ions on multiferroic Pb(Fe1/2Nb1/2)O-3 ceramics probed by x-ray absorption spectroscopy

Local structure around Fe ions on Pb(Fe1/2Nb1/2)O-3 ceramics was probed by x-ray absorption spectroscopy in order to settle the controversies about its structure. It is observed that the shell structure around Fe atoms exhibits a monoclinic local symmetry at 130 and 230 K, tetragonal local symmetry at room temperature, and cubic local symmetry at 410 K. Independently of the coordination, temperature, or symmetry, Fe-O mean bond-length does not vary significantly. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709490]