GMI and mismatched-CSI outage exponents in MIMO block-fading channels

We study transmission over multiple-antenna blockfading channels with imperfect channel state information at both the transmitter and receiver. Specifically, we investigate achievable rates based on the generalized mutual information. We then analyze the corresponding outage probability in the high signal-to-noise ratio regime. © 2013 IEEE.

Mitigation of lake eutrophication: Loosen nitrogen control and focus on phosphorus abatement

w Traditionally, nitrogen control is generally considered an important component of reducing lake eutrophication and cyanobacteria blooms. However, this viewpoint is refuted recently by researchers in China and North America. In the present paper, the traditional viewpoint of nitrogen control is pointed out to lack a scientific basis: the N/P hypothesis is just a subjective assumption; bottle bioassay experiments fail to simulate the natural process of nitrogen fixation. Our multi-year comparative research in more than 40 Yangtze lakes indicates that phosphorus is the key factor determining phytoplankton growth regardless of nitrogen concentrations and that total phytoplankton biomass is determined by total phosphorus and not by total nitrogen concentrations. These results imply that, in the field, nitrogen control will not decrease phytoplankton biomass. This finding is supported by a long-term whole-lake experiment from North America. These outcomes can be generalized in terms that a reduction in nitrogen loading may not decrease the biomass of total phytoplankton as it can stimulate blooms of nitrogen-fixing cyanobacteria. To mitigate eutrophication, it is not nitrogen but phosphorus that should be reduced, unless nitrogen concentrations are too high to induce direct toxic impacts on human beings or other organisms. Finally, details are provided on how to reduce controls on nitrogen and how to mitigate eutrophication. (C) 2009 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

The use of wavefront encoding to reduce crosstalk in a multicasting fiber telecom switch

A multicasting fiber optic switch employing a liquid crystal on silicon spatial light modulator is used to demonstrate wavefront encoding, a novel technique for crosstalk mitigation. Experimentally we reduce worst case crosstalk by 7.5dB. © 2012 OSA.

Construction of habitat suitability models (HSMs) for benthic macroinvertebrate and their applications to instream environmental flows: A case study in Xiangxi River of Three Gorges Reservior region, China

Based on a long-term ecological monitoring, the present study chose the most dominant benthic macroinvertebrate (Baetis spp.) as target organisms in Xiangxi River, built the habitat suitability models (HSMs) for water depth, current velocity and substrate, respectively, which is the first aquatic organisms model for habitat suitability in the Chinese Mainland with a long-term consecutive in situ measurement. In order to protect the biointegrity and function of the river ecosystem, the theory system of instream environmental flow should be categorized into three hierarchies, namely minimum required instream flow (hydrological level), minimum instream environmental flow (biospecies level), and optimum instream environmental flow (ecosystem level). These three hierarchies of instream environmental flow models were then constructed with the hydrological and weighted usable area (WUA) method. The results show that the minimum required instream flow of Xiangxi River calculated by the Tennant method (10% of the mean annual flow) was 0.615 m(3) s(-1); the minimum instream environmental flow accounted for 19.22% of the mean annual flow (namely 1.182 m(3) s(-1)), which was the damaged river channel. ow in the dry season; and 42.91% of the mean annual flow (namely 2.639 m(3) s(-1)) should be viewed as the optimum instream environmental flow in order to protect the health of the river ecosystem, maintain the instream biodiversity, and reduce the impact of small hydropower stations nearby the Xiangxi River. We recommend that the hydrological and biological methods can help establish better instream environmental. ow models and design best management practices for use in the small hydropower station project. (C) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

A role of monitoring to reduce the uncertainty in the performance of pile foundations

In typical conventional foundation design, the inherent variability of soil properties, model uncertainty and construction variability are not modeled explicitly. A main drawback of this is that the effect of each variability on the probability of an unfavorable event cannot be evaluated quantitatively. In this paper, a method to evaluate the uncertainty-reduction effect on the performance of a vertically-loaded pile foundation by monitoring the pile performance (such as pile load testing or placing sensors in piles) is proposed. The effectiveness of the proposed method is examined based on the investigation of a 120-pile foundation placed on three different ground profiles. The computed results show the capability of evaluating the uncertainty-reduction effect on the performance of a pile foundation by monitoring. © 2014 Taylor & Francis Group, London.

Parametric resonance for vibration energy harvesting with design techniques to passively reduce the initiation threshold amplitude

A vibration energy harvester designed to access parametric resonance can potentially outperform the conventional direct resonant approach in terms of power output achievable given the same drive acceleration. Although linear damping does not limit the resonant growth of parametric resonance, a damping dependent initiation threshold amplitude exists and limits its onset. Design approaches have been explored in this paper to passively overcome this limitation in order to practically realize and exploit the potential advantages. Two distinct design routes have been explored, namely an intrinsically lower threshold through a pendulum-lever configuration and amplification of base excitation fed into the parametric resonator through a cantilever-initial-spring configuration. Experimental results of the parametric resonant harvesters with these additional enabling designs demonstrated an initiation threshold up to an order of magnitude lower than otherwise, while attaining a much higher power peak than direct resonance. © 2014 IOP Publishing Ltd.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist

A silicon-on-insulator optical fiber-to-waveguide spot-size converter (SSC) using Poly-MethylMethAcrylate (PMMA) is presented for integrated optical circuits. Unlike the conventional use of PMMA as a positive resist, it has been successfully used as a negative resist with high-dose electron exposure for the fabrication of ultrafine silicon wire waveguides. Additionally, this process is able to reduce the side-wall roughness, and substantially depresses the unwanted propagation loss. Exploiting this technology, the authors demonstrated that the SSC can improve coupling efficiency by as much as over 2.5 dB per coupling facet, compared with that of SSC fabricated with PMMA as a positive resist with the same dimension.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at similar to 0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Experimental investigation on submicron rib waveguide microring/racetrack resonators in silicon-on-insulator

in experiment, characteristics of silicon microring/racetrack resonators in submicron rib waveguides have been systematically investigated. It is demonstrated that only a transverse-electric mode is guided for a ratio of slab height to rib height h/H = 0.5. Thus, these microring/racetrack resonators can only function for quasi-transverse-electric mode, while they get rid of transverse-magnetic polarization. Electron beam lithography and inductively coupled plasma etching were employed and improved to reduce side-wall roughness for low propagation loss and high performance resonators. Then, the effects of waveguide dimensions, coupling region design, waveguide roughness, and oxide cladding for the resonators have been considered and analyzed. (C) 2008 Elsevier B.V. All rights reserved.

Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN

We investigate the uniaxial strain effect in the c-plane on optical properties of wurtzite GaN based on k center dot p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the k(x) - k(y) plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the effcient improvement of GaN-based laser performance.

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.

Fabrication and optical optimization of spot-size converters with strong cladding layers

A silicon-on-insulator (SOI) optical fiber-to-waveguide spot-size converter (SSC) overlaid with specially treated silica is investigated for integrated optical circuits. Unlike the conventional process of simply depositing the hot silica on silicon waveguides, two successive layers of silicon dioxide were grown on etched SSC structures by PECVD (plasma-enhanced chemical vapor deposition). The two layers have 0.8% index contrast and supply stronger cladding for an incident light beam. Additionally, this process is able to reduce the effective refractive index of the input mode to less than 1.47 (extremely close to that of the fiber), substantially weakening the unwanted back reflection. Exploiting this technology, it was demonstrated that the SSC showed a theoretical low mode mismatch loss of 1.23 dB for a TE-like mode and has an experimental coupling efficiency of 66%.