Thermally assisted tunneling transport in La0.7Ca0.3MnO3/SrTiO3:Nb Schottky-like heterojunctions

We report on the electrical transport properties of all-oxide La0.7Ca0.3MnO3/SrTiO3:Nb heterojunctions with lateral size of just a few micrometers. The use of lithography techniques to pattern manganite pillars ensures perpendicular transport and allows exploration of the microscopic conduction mechanism through the interface. From the analysis of the current-voltage characteristics in the temperature range 20-280 K we find a Schottky-like behavior that can be described by a mechanism of thermally assisted tunneling if a temperature-dependent value of the dielectric permittivity of SrTiO3:Nb (NSTO) is considered.We determine the Schottky energy barrier at the interface, qVB = 1.10 ± 0.02 eV, which is found to be temperature independent, and a value of ? = 17 ± 2 meV for the energy of the Fermi level in NSTO with respect to the bottom of its conduction band.

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

There has been significant research in the study of in-plane charge-carrier transport in graphene in order to understand and exploit its unique electrical properties; however, the vertical graphene–semiconductor system also presents opportunities for unique devices. In this letter, we investigate the epitaxial graphene/p-type 4H-SiC system to better understand this vertical heterojunction. The I–V behavior does not demonstrate thermionic emission properties that are indicative of a Schottky barrier but rather demonstrates characteristics of a semiconductor heterojunction. This is confirmed by the fitting of the temperature-dependent I–V curves to classical heterojunction equations and the observation of band-edge electroluminescence in SiC.

Orbital debris mitigation through deorbiting with passive electrodynamic drag

The increase of orbital debris and the consequent proliferation of smaller objects through fragmentation are driving the need for mitigation strategies. The issue is how to deorbit the satellite with an efficient system that does not impair drastically the propellant budget of the satellite and, consequently, reduces its operating life. We have been investigating, in the framework of a European-Community-funded project, a passive system that makes use of an electrodynamics tether to deorbit a satellite through Lorentz forces. The deorbiting system will be carried by the satellite itself at launch and deployed from the satellite at the end of its life. From that moment onward the system operates passively without requiring any intervention from the satellite itself. The paper summarizes the results of the analysis carried out to show the deorbiting performance of the system starting from different orbital altitudes and inclinations for a reference satellite mass. Results can be easily scaled to other satellite masses. The results have been obtained by using a high-fidelity computer model that uses the latest environmental routines for magnetic field, ionospheric density, atmospheric density and a gravity field model. The tether dynamics is modelled by considering all the main aspects of a real system as the tether flexibility and its temperature-dependent electrical conductivity. Temperature variations are computed by including all the major external and internal input fluxes and the thermal flux emitted from the tether. The results shows that a relatively compact and light system can carry out the complete deorbit of a relatively large satellite in a time ranging from a month to less than a year starting from high LEO with the best performance occurring at low orbital inclinations.

Hexagonal patterns in a model for rotating convection

We study a model equation that mimics convection under rotation in a fluid with temperature- dependent properties (non-Boussinesq (NB)), high Prandtl number and idealized boundary conditions. It is based on a model equation proposed by Segel [1965] by adding rotation terms that lead to a Kuppers-Lortz instability [Kuppers & Lortz, 1969] and can develop into oscillating hexagons. We perform a weakly nonlinear analysis to find out explicitly the coefficients in the amplitude equation as functions of the rotation rate. These equations describe hexagons and os- cillating hexagons quite well, and include the Busse?Heikes (BH) model [Busse & Heikes, 1980] as a particular case. The sideband instabilities as well as short wavelength instabilities of such hexagonal patterns are discussed and the threshold for oscillating hexagons is determined.

The application of inverse-dispersion and gradient methods to estimate ammonia emissions from a penguin colony.

Penguin colonies represent some of the most concentrated sources of ammonia emissions to the atmosphere in the world. The ammonia emitted into the atmosphere can have a large influence on the nitrogen cycling of ecosystems near the colonies. However, despite the ecological importance of the emissions, no measurements of ammonia emissions from penguin colonies have been made. The objective of this work was to determine the ammonia emission rate of a penguin colony using inverse-dispersion modelling and gradient methods. We measured meteorological variables and mean atmospheric concentrations of ammonia at seven locations near a colony of Adélie penguins in Antarctica to provide input data for inverse-dispersion modelling. Three different atmospheric dispersion models (ADMS, LADD and a Lagrangian stochastic model) were used to provide a robust emission estimate. The Lagrangian stochastic model was applied both in ‘forwards’ and ‘backwards’ mode to compare the difference between the two approaches. In addition, the aerodynamic gradient method was applied using vertical profiles of mean ammonia concentrations measured near the centre of the colony. The emission estimates derived from the simulations of the three dispersion models and the aerodynamic gradient method agreed quite well, giving a mean emission of 1.1 g ammonia per breeding pair per day (95% confidence interval: 0.4–2.5 g ammonia per breeding pair per day). This emission rate represents a volatilisation of 1.9% of the estimated nitrogen excretion of the penguins, which agrees well with that estimated from a temperature-dependent bioenergetics model. We found that, in this study, the Lagrangian stochastic model seemed to give more reliable emission estimates in ‘forwards’ mode than in ‘backwards’ mode due to the assumptions made.

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.

Mapping and Introgression of QTL Involved in Fruit Shape Transgressive Segregation into 'Piel de Sapo' Melon (Cucumis melo L.)

A mapping F2 population from the cross ‘Piel de Sapo’ × PI124112 was selectively genotyped to study the genetic control of morphological fruit traits by QTL (Quantitative Trait Loci) analysis. Ten QTL were identified, five for FL (Fruit Length), two for FD (Fruit Diameter) and three for FS (Fruit Shape). At least one robust QTL per character was found, flqs8.1 (LOD = 16.85, R2 = 34%), fdqs12.1 (LOD = 3.47, R2 = 11%) and fsqs8.1 (LOD = 14.85, R2 = 41%). flqs2.1 and fsqs2.1 cosegregate with gene a (andromonoecious), responsible for flower sex determination and with pleiotropic effects on FS. They display a positive additive effect (a) value, so the PI124112 allele causes an increase in FL and FS, producing more elongated fruits. Conversely, the negative a value for flqs8.1 and fsqs8.1 indicates a decrease in FL and FS, what results in rounder fruits, even if PI124112 produces very elongated melons. This is explained by a significant epistatic interaction between fsqs2.1 and fsqs8.1, where the effects of the alleles at locus a are attenuated by the additive PI124112 allele at fsqs8.1. Roundest fruits are produced by homozygous for PI124112 at fsqs8.1 that do not carry any dominant A allele at locus a (PiPiaa). A significant interaction between fsqs8.1 and fsqs12.1 was also detected, with the alleles at fsqs12.1 producing more elongated fruits. fsqs8.1 seems to be allelic to QTL discovered in other populations where the exotic alleles produce elongated fruits. This model has been validated in assays with backcross lines along 3 years and ultimately obtaining a fsqs8.1-NIL (Near Isogenic Line) in ‘Piel de Sapo’ background which yields round melons.

Propiedades ópticas y estructurales de nanoestructuras de Zn(Cd)(Mg)O

En la presente tesis doctoral se ha realizado un estudio utilizando diferentes técnicas de crecimiento (RPE-MOCVD y spray pyrolysis) y estructuras (nanohilos, pozos y puntos cuánticos y capas) con el objetivo de desarrollar dispositivos que cubran desde el rango visible hasta el ultravioleta. Es por esta razón por la que se han elegido materiales basados en ZnO, debido a la posibilidades que estos ofrecen para variar su bandgap en un amplio rango de energías. Prueba de ello es que en este estudio se ha conseguido cubrir un rango espectral desde 1.86 hasta 4.11 eV, estudiandose además fenómenos físicos como son la difusión e incorporaci ón de la aleación o la adsorción de gases en la super_cie, lo que ha permitido la fabricación de diferentes fotodetectores de gran sensibilidad. Por todo ello, los resultados obtenidos en esta tesis suponen una gran contribución al conocimiento de las propiedades físicas de las aleaciones de Zn(Cd)O y Zn(Mg)O para potenciales aplicaciónes en dispositivos que operen en el rango visible y ultravioleta del espectro, respectivamente. En esta memoria se da en primer lugar una visión de las propiedades de materiales basados en ZnO, entrando en detalle en una de las ventajas que este presenta, la facilidad que tiene este material para formar nanoestructuras. En el capítulo 3 se dan los conceptos teóricos necesarios para comprender las propiedades ópticas de este tipo de materiales, mostrando también los resultados más reseñables obtenidos en ZnO. En los capítulos referentes a los resultados se pueden diferenciar dos grandes bloques. En el primer bloque de resultados se han analizado nanohilos y pozos cuánticos de Zn(Cd)O crecidos por la técnica de RPE-MOCVD (Capítulos 4 y 5). En el segundo se expondrá el estudio realizado sobre capas y puntos cuánticos de Zn(Mg)O crecidos por la técnica spray pyrolysis como se describe en mayor detalle a continuación. Nanohilos y pozos cuánticos de Zn(Cd)O crecidos por RPE-MOCVD Teóricamente aleando el ZnO con CdO es posible disminuir el valor del band- gap desde 3.37 eV hasta 0.95 eV, cubriendo por completo el espectro visible. El desarrollo del ternario Zn(Cd)O permitiría la fabricación de heteroestructuras y pozos cuánticos, muy importantes en el desarrollo de dispositivos optoelectrónicos que cubran la parte visible del espectro. Sin embargo, la diferencia de estructura cristalina entre estos dos materiales junto a la baja solubilidad del Cd y su alta presión de vapor, di_culta la obtención de material de alta calidad cristalina con alto contenido en Cd. En esta tesis doctoral se ha realizado una completa caracterización óptica y estructural de nanohilos de Zn(Cd)O credidos por la técnica de RPE-MOCVD. Estos nanohilos tinene unas longitudes comprendidas entre 1 y 3 _m y diámetros entre 100 y 200 nm. La concentración máxima introducida de Cd en estas estructuras ha sido de hasta un 54% manteniendo la estructura wurtzita del ZnO, siendo este el mayor contenido de Cd introducido hasta la fecha en nanostructuras basada en ZnO. Este hecho se traduce en una variación de la energía de emisión entre 3.31 y 1.86 eV con el aumento en Cd. El uso de diferentes técnicas de alta resoluci ón de caracterización estructural ha permitido demostrar la presencia de una sola fase estructural wurtzita sin observarse ningún indicio de separación de fases ni acumulación de Cd a lo largo del nanohilo para todos los contenidos de Cd. Con el propósito de fabricar dispositivos en nanohilos individuales, parte de esta tesis doctoral ha estado dedicada a estudiar el impacto que el recocido térmico tiene en las propiedades ópticas y eléctricas de nanohilos de Zn(Cd)O. El recocido térmico es un proceso clave en la optimización de dispositivos, ya sea para la obtenci ón de contactos óhmicos, reducción de defectos o difusión de dopantes por ejemplo. En este estudio se ha observado una mejora muy signi_cativa de las propiedades de emisión de los nanohilos cuando estos eran recocidos a temperaturas mayores que la de crecimiento (300 oC). En las muestras con Cd se ha observado además que el recocido también produce un desplazamiento de la emisión hacia mayores energías debido a una reducción homogénea del contenido de Cd. Medidas de fotoluminiscencia con resolución temporal muestran el impacto que tiene la localización del excitón en las _uctuaciones de potencial, debidas a una distribución estadística del Cd, en la dinámica de los portadores. Comparando el tiempo de vida de los portadores entre los nanohilos recocidos y sin recocer se ha observado un aumento de este parámetro en las estructuras recocidas. Este aumento es fundamentalmente debido a una reducción de centros de recombinación no radiativa asociados a defectos presentes a lo largo del nanohilo. Además, se ha estudiado la evolución de los tiempos de vida de los portadores en función de la temperatura, registrándose una menor estabilidad con la temperatura de los tiempos de vida en las muestras recocidas. Este resultado sugiere que el recocido térmico consigue reducir parte del desorden de la aleación en la estructura. Tras haber caracterizados los nanohilos se desarrollaron una serie de procesa dos para la fabricación de dispositivos basados en nanohilos individuales. Se fabricaron en concreto fotodetectores sensibles al UV, en los que se observó también la alta sensibilidad que muestran a la adsorción de gases en la super_cie, incrementada por la gran relación super_cie/volúmen característica de las nanoestructuras. Estos procesos de adsorción observados tienen un impacto directo sobre las propiedades ópticas y electricas de los dispositivos como se ha demostrado. Por ello que en esta tesis se hayan estudiado en detalle este tipo de procesos, ideando maneras para tener un mayor control sobre ellos. Finalmente se crecieron estructuras de pozos cuántico de ZnCdO/ZnO en nanohilos con contenidos de Cd nominales de 54 %. Las medidas ópticas realizadas mostraron como al aumentar la anchura del pozo de 0.7 a 10 nm, la emisión relacionada con el pozo se desplazaba entre 3.30 y 1.97 eV. Este gran desplazamiento representa el mayor obtenido hasta la fecha en pozos cuánticos de ZnCdO/ZnO. Sin embargo, al caracterizar estructuralmente estas muestras se observó la presencia de procesos de difusión de Cd entre el pozo y la barrera. Como se ha podido medir, este tipo de procesos reducen sustancialmente la concentración de Cd en el pozo al difundirse parte a la barrera. cambiando completamente la estructura de bandas nominal de estas estructuras. Este estudio demuestra la importancia del impacto de los procesos de difusión en la interpretación de los efectos de con_namiento cuántico para este tipo de estructuras. Capas y puntos cuánticos de Zn(Mg)O crecidos por spray pyrolysis La técnica de spray pyrolysis, debido a su simplicidad, bajo coste y capacidad de crecer sobre grandes áreas conservando una alta calidad cristalina presenta un gran interés en la comunidad cientí_ca para el potencial desarrollo de dispositivos comerciales. En esta tesis se ha estudiado las propiedades ópticas y eléctricas de capas y puntos cuánticos de Zn(Mg)O crecidos por esta técnica. Al contrario que pasa con el Cd, al introducir Mg en la estructura wurtzita de ZnO se consigue aumentar el bandgap del semiconductor. Sin embargo, al igual que pasa con el CdO, la diferencia de estructura cristalina entre el ZnO y el MgO limita la cantidad de Mg que se puede incorporar, haciendo que para una cierta concentración de Mg aparezcan el fenómeno de separación de fases. En esta tesis se ha conseguido incorporar hasta un contenido de Mg del 35% en la estructura wurtzita del ZnO utilizando la técnica de spray pyrolysis, resultado que representa la mayor concentración de Mg publicada hasta la fecha. Este hecho ha posibilitado variar la energía del borde de absorción desde 3.30 a 4.11 eV. En estas capas se ha realizado una completa caracterización óptica observándose una diferencia entre las energías del borde de absorción y del máximo de emisión creciente con el contenido en Mg. Esta diferencia, conocida como desplazamiento de Stokes, es debida en parte a la presencia de _uctuaciones de potencial producidas por un desorden estadístico de la aleación. Se han fabricado fotodetectores MSM de alta calidad utilizando las capas de Zn(Mg)O previamente caracterizadas, observándose un desplazamiento del borde de absorción con el aumento en Mg desde 3.32 a 4.02 eV. Estos dispositivos muestran altos valores de responsividad (10-103 A/W) y altos contrastes entre la responsividad bajo iluminación y oscuridad (10-107). Estos resultados son en parte debidos a la presencia de mecanismos de ganancia y una reducción de la corriente de oscuridad en las muestras con alto contenido de Mg. Utilizando esta misma técnica de crecimiento se han crecido puntos de Zn(Mg)O con concentraciones nominales de Mg entre 0 y 100 %, con dimensiones medias entre 4 y 6 nm. Las medidas estructurales realizadas muestran que hasta un valor de Mg de 45 %, los puntos están compuestos por una única fase estructural, wurtzita. A partir de esa concentración de Mg aparece una fase cúbica en los puntos, coexistiendo con la fase hexagonal hasta una concentración nominales del 85 %. Para concentraciones mayores de Mg, los puntos muestran una única fase estructural cúbica. Medidas de absorción realizadas en estos puntos de Zn(Mg)O muestran un desplazamiento del borde de absorción entre 3.33 y 3.55 eV cuando la concentraci ón de Mg en los puntos aumenta hasta el 40 %. Este desplazamiento observado es debido solamente a la fase wurtzita del Zn(Mg)O donde se incorpora el Mg. ABSTRACT This PhD theis presents a study using di_erent growth techniques (RPEMOCVD and spray pyrolysis) and structures (nanowires, quantum dots and wells and layers) in order to develop devices that extend from the visible to the ultraviolet range. For this reason ZnO based materials have been choosen, because they o_er the possibility to tunne the bandgap in this energy range. Proof of this is that this study has managed to cover a spectral range from 1.86 to 4.11 eV, also being studied physical phenomena such as di_usion and incorporation of alloy or adsorption of gases on the surface, allowing the develop di_erent highly sensitive photodetectors. Therefore, the results obtained in this thesis are a great contribution two large blockso the knowledge of the physical properties of alloys Zn(Cd)O and Zn(Mg)O for potential applications in devices that operate in the visible and ultraviolet range, respectively. In the _rst chapter, the general properties of ZnO-based materials are presented, showing the facilities that these kind of materials o_er to obtain di_erent nanoestructures. In Chapter 3, optical theoretical concepts are given to understand the optical properties of these materials, also showing the most signi_cant results of ZnO. In the chapters related with the results, two blocks could be distinguish. In the _rst one, Zn(Cd)O nanowires and quantum wells grown by RPE-MOCVD have been analyzed (Chapters 4 and 5). The second block of results shows the study performed in Zn(Mg)O _lms and quantum dots grown by spray pyrolysis. Zn(Cd)O nanowires and quantum wells grown by RPE-MOCVD In summary, the results of the PhD thesis are a great contribution to the knowledge of the physical properties of Zn(Cd)O and Zn(Mg)O alloys and their application for high performance devices operating in the visible and UV ranges, respectively. The performance of the device is still limited due to alloy solubility and p-doping stability, which opens a door for future research in this _eld. Theoretically, annealing ZnO with CdO allows to reduce the bandgap from 3.37 to 0.95 eV, covering the whole visible spectrum. The development of ZnCdO alloys allows the fabrication of heterostructures and quantum wells, necessary for the development of high performance optoelectronic devices. However, the di_erent crystal structures between CdO and ZnO and the low solubility of Cd and its high vapor pressure, hinders the growth of ZnCdO alloys with high Cd contents. In this PhD thesis Zn(Cd)O nanowires have been optically and structurally characterized, obtaining a maximum Cd content of 54% while maintaining their wurtzite structure. This Cd content, which allows lowering the bandgap down to 1.86 eV, is the highest concentration ever reported in nanostructures based on ZnO. The combination of optical and structural characterization techniques used during this thesis has allowed the demonstration of the presence of a single wurtzite structure, without observing any indication of phase separation or Cd accumulation along the nanowire. Annealing processes are essential in the fabrication of optoelectronic devices. For this reason, a complete study of the annealing e_ects in the optical and electrical properties of Zn(Cd)O nanowires has been performed. In the _rst place, annealing nanowires at higher temperatures than their growth temperature (300 oC) allows a signi_cant improvement of their emission properties. However, in the samples that contain Cd a shift in the emission towards higher energies has been observed due to a homogeneous reduction of the Cd content in the nanowires. Time resolved photoluminescence measurements show the impact of the exciton localization in the potential _uctuations due to a statistical alloy disorder. An increase in the carrier lifetime has been obtained for the annealed nanowires. This increase is mainly due to the reduction of non-radiative recombination centers associated with the defects present in the material. Furthermore, temperature dependent time resolved photoluminescence measurements suggest a reduction of the alloy disorder in the annealed samples. In this thesis, single nanowire photodetectors with a high responsivity in the UV range have been demonstrated. Due to the high surface/volume ratio, these structures are very sensitive to gas adsorption at the surface, which largely de_nes the optical and electrical properties of the material and, therefore, of the device. With the aim of obtaining time stable devices, the dynamic adsorption-desorption processes have been studied, developing di_erent approaches that allow a higher control over them. Finally, ZnCdO/ZnO quantum wells have been grown with a nominal Cd concentration of 54% inside the well. The performed optical measurements show that increasing the well width from 0.7 to 10 nm, shifts the emission related with the well from 3.30 to 1.97 eV. This result represents the highest shift reported in the literature. However, a detailed structural characterization shows the presence of di_usion phenomena which substantially reduce the concentration of Cd in the well, while increasing it in the barrier. This type of phenomena should be considered when ac curately interpretating the quantum con_nement e_ects in Zn(Cd)O/ZnO quantum wells. Theoretically, annealing ZnO with CdO allows to decrease the bandgap from 3.37 to 0.95 eV, covering the whole visible spectrum. Zn(Mg)O _lms and quantum dots grown by spray pyrolysis Due to its simplicity, low-cost and capacity to grow over large areas conserving a high crystal quality, spray pyrolysis technique presents a great interest in the scienti_c community for developing comercial devices. In this thesis, a complete study of the optical and structural properties of Zn(Mg)O _lms and quantum dots grown by spray pyrolysis has been performed. Contrary to Zn(Cd)O alloys, when introducing Mg in the ZnO wurtzite structure an increase in the bandgap in obtained. Once again, the di_erence in the crystal structure of ZnO and MgO limits the amount of Mg that can be introduced before phase separation appears. In this PhD thesis, a maximum Mg content of 35% has been incorporated in the wurtzite structure using spray pyrolysis. This variation in the Mg content translates into an increase of the absorption edge from 3.30 to 4.11 eV. Up to this date, this result represents the highest Mg content introduced by spray pyrolysis in a ZnO wurzite structure reported in the literature. The comparison of the emission and absorption spectra shows the presence of an increasing Stokes shift with Mg content. This phenomenon is partialy related with the presence of potential _uctuations due to an statistic alloy disorder. MSM photodetectors have been processed on previously characterized Zn(Mg)O _lms. These devices have shown a shift in the absorption edge from 3.32 to 4.02 eV with the increase in Mg content, high responsivity values (10-103 A/W) and high contrast ratios between illuminated and dark responsivities (10-107). These values are explained by the presence of a gain mechanism and a reduction of dark current in the ZnMgO samples. Zn(Mg)O quantum dots have also been grown using spray pyrolysis with Mg concentrations between 0 and 100% and with average widths ranging 4 to 6 nm. Structural measurements show that at a Mg concentration of 45% the cubic phase appears, coexisting with the hexagonal phase up to an 85% concentration of Mg content. From 85% onwards the quantum dots show only the cubic phase. Absorption measurements performed in these structures reveal a shift in the absorption edge from 3.33 to 3.55 eV when the Mg content increases up to 40 %.

Magnetic disorder in TbAl2 nanoparticles

The magnetic and thermal properties of TbAl2 nanosized alloys (diameters, 12 nm $\leqslant D\leqslant $ 20 nm) obtained by high-energy milling are characterised by specific heat, magnetisation and neutron scattering. The specific heat shows that the λ-anomaly at Curie temperature vanishes when the milling time reaches 300 h and its field variation shows a broad peak around 70 K disclosing a disordered magnetic state. The thermal variation of magnetization follows a Bloch process with a decrease of the stiffness constant and a faster demagnetisation with a quadratic exponent instead of the bulk ordinary ${T}^{3/2}$-dependence. The magnetic moment reduction in the nanosized alloys follows a 1/D dependence, remarking the role of disordered moment surface. The Rietveld analysis of the neutron diffraction patterns indicates a collinear ferromagnetic structure, with a reduction of the Tb-magnetic moment when decreasing the particle size. The temperature dependent overall magnetic signal of nanoparticles is derived from small-angle neutron scattering. A magnetic nanoparticle structure with an ordered ferromagnetic core and a disordered surface layer is proposed.

Joule heating in ferromagnetic nanostripes with a notch

The temperature in a ferromagnetic nanostripe with a notch subject to Joule heating has been studied in detail. We first performed an experimental real-time calibration of the temperature versus time as a 100 ns current pulse was injected into a Permalloy nanostripe. This calibration was repeated for different pulse amplitudes and stripe dimensions and the set of experimental curves were fitted with a computer simulation using the Fourier thermal conduction equation. The best fit of these experimental curves was obtained by including the temperature-dependent behavior of the electrical resistivity of the Permalloy and of the thermal conductivity of thesubstrate(SiO2). Notably, a nonzero interface thermal resistance between the metallic nanostripe and thesubstrate was also necessary to fit the experimental curves. We found this parameter pivotal to understand ourresults and the results from previous works. The higher current density in the notch, together with the interface thermal resistance, allows a considerable increase of the temperature in the notch, creating a large horizontal thermal gradient. This gradient, together with the high temperature in the notch and the larger current density close to the edges of the notch, can be very influential in experiments studying the current assisted domain wall motion.

Functioning of the Drosophila integral U1/U2 protein Snf independent of U1 and U2 small nuclear ribonucleoprotein particles is revealed by snf+ gene dose effects

Snf, encoded by sans fille, is the Drosophila homolog of mammalian U1A and U2B′′ and is an integral component of U1 and U2 small nuclear ribonucleoprotein particles (snRNPs). Surprisingly, changes in the level of this housekeeping protein can specifically affect autoregulatory activity of the RNA-binding protein Sex-lethal (Sxl) in an action that we infer must be physically separate from Snf’s functioning within snRNPs. Sxl is a master switch gene that controls its own pre-mRNA splicing as well as splicing for subordinate switch genes that regulate sex determination and dosage compensation. Exploiting an unusual new set of mutant Sxl alleles in an in vivo assay, we show that Snf is rate-limiting for Sxl autoregulation when Sxl levels are low. In such situations, increasing either maternal or zygotic snf+ dose enhances the positive autoregulatory activity of Sxl for Sxl somatic pre-mRNA splicing without affecting Sxl activities toward its other RNA targets. In contrast, increasing the dose of genes encoding either the integral U1 snRNP protein U1-70k, or the integral U2 snRNP protein SF3a60, has no effect. Increased snf+ enhances Sxl autoregulation even when U1-70k and SF3a60 are reduced by mutation to levels that, in the case of SF3a60, demonstrably interfere with Sxl autoregulation. The observation that increased snf+ does not suppress other phenotypes associated with mutations that reduce U1-70k or SF3a60 is additional evidence that snf+ dose effects are not caused by increased snRNP levels. Mammalian U1A protein, like Snf, has a snRNP-independent function.

Mechanism of protein remodeling by ClpA chaperone

ClpA, a newly discovered ATP-dependent molecular chaperone, remodels bacteriophage P1 RepA dimers into monomers, thereby activating the latent specific DNA binding activity of RepA. We investigated the mechanism of the chaperone activity of ClpA by dissociating the reaction into several steps and determining the role of nucleotide in each step. In the presence of ATP or a nonhydrolyzable ATP analog, the initial step is the self-assembly of ClpA and its association with inactive RepA dimers. ClpA-RepA complexes form rapidly and at 0°C but are relatively unstable. The next step is the conversion of unstable ClpA-RepA complexes into stable complexes in a time- and temperature-dependent reaction. The transition to stable ClpA-RepA complexes requires binding of ATP, but not ATP hydrolysis, because nonhydrolyzable ATP analogs satisfy the nucleotide requirement. The stable complexes contain approximately 1 mol of RepA dimer per mol of ClpA hexamer and are committed to activating RepA. In the last step of the reaction, active RepA is released upon exchange of ATP with the nonhydrolyzable ATP analog and ATP hydrolysis. Importantly, we discovered that one cycle of RepA binding to ClpA followed by ATP-dependent release is sufficient to convert inactive RepA to its active form.

Uridine Diphosphate–Glucose Transport into the Endoplasmic Reticulum of Saccharomyces cerevisiae: In Vivo and In Vitro Evidence

It has been proposed that synthesis of β-1,6-glucan, one of Saccharomyces cerevisiae cell wall components, is initiated by a uridine diphosphate (UDP)-glucose–dependent reaction in the lumen of the endoplasmic reticulum (ER). Because this sugar nucleotide is not synthesized in the lumen of the ER, we have examined whether or not UDP–glucose can be transported across the ER membrane. We have detected transport of this sugar nucleotide into the ER in vivo and into ER–containing microsomes in vitro. Experiments with ER-containing microsomes showed that transport of UDP–glucose was temperature dependent and saturable with an apparent Km of 46 μM and a Vmax of 200 pmol/mg protein/3 min. Transport was substrate specific because UDP–N-acetylglucosamine did not enter these vesicles. Demonstration of UDP–glucose transport into the ER lumen in vivo was accomplished by functional expression of Schizosaccharomyces pombe UDP–glucose:glycoprotein glucosyltransferase (GT) in S. cerevisiae, which is devoid of this activity. Monoglucosylated protein-linked oligosaccharides were detected in alg6 or alg5 mutant cells, which transfer Man9GlcNAc2 to protein; glucosylation was dependent on the inhibition of glucosidase II or the disruption of the gene encoding this enzyme. Although S. cerevisiae lacks GT, it contains Kre5p, a protein with significant homology and the same size and subcellular location as GT. Deletion mutants, kre5Δ, lack cell wall β-1,6 glucan and grow very slowly. Expression of S. pombe GT in kre5Δ mutants did not complement the slow-growth phenotype, indicating that both proteins have different functions in spite of their similarities.

β-Catenin Can Be Transported into the Nucleus in a Ran-unassisted Manner

The nuclear accumulation of β-catenin plays an important role in the Wingless/Wnt signaling pathway. This study describes an examination of the nuclear import of β-catenin in living mammalian cells and in vitro semi-intact cells. When injected into the cell cytoplasm, β-catenin rapidly migrated into the nucleus in a temperature-dependent and wheat germ agglutinin–sensitive manner. In the cell-free import assay, β-catenin rapidly migrates into the nucleus without the exogenous addition of cytosol, Ran, or ATP/GTP. Cytoplasmic injection of mutant Ran defective in its GTP hydrolysis did not prevent β-catenin import. Studies using tsBN2, a temperature-sensitive mutant cell line that possesses a point mutation in the RCC1 gene, showed that the import of β-catenin is insensitive to nuclear Ran-GTP depletion. These results show that β-catenin possesses the ability to constitutively translocate through the nuclear pores in a manner similar to importin β in a Ran-unassisted manner. We further showed that β-catenin also rapidly exits the nucleus in homokaryons, suggesting that the regulation of nuclear levels of β-catenin involves both nuclear import and export of this molecule.

Der3p/Hrd1p Is Required for Endoplasmic Reticulum-associated Degradation of Misfolded Lumenal and Integral Membrane Proteins

We have studied components of the endoplasmic reticulum (ER) proofreading and degradation system in the yeast Saccharomyces cerevisiae. Using a der3–1 mutant defective in the degradation of a mutated lumenal protein, carboxypeptidase yscY (CPY*), a gene was cloned which encodes a 64-kDa protein of the ER membrane. Der3p was found to be identical with Hrd1p, a protein identified to be necessary for degradation of HMG-CoA reductase. Der3p contains five putative transmembrane domains and a long hydrophilic C-terminal tail containing a RING-H2 finger domain which is oriented to the ER lumen. Deletion of DER3 leads to an accumulation of CPY* inside the ER due to a complete block of its degradation. In addition, a DER3 null mutant allele suppresses the temperature-dependent growth phenotype of a mutant carrying the sec61–2 allele. This is accompanied by the stabilization of the Sec61–2 mutant protein. In contrast, overproduction of Der3p is lethal in a sec61–2 strain at the permissive temperature of 25°C. A mutant Der3p lacking 114 amino acids of the lumenal tail including the RING-H2 finger domain is unable to mediate degradation of CPY* and Sec61–2p. We propose that Der3p acts prior to retrograde transport of ER membrane and lumenal proteins to the cytoplasm where they are subject to degradation via the ubiquitin-proteasome system. Interestingly, in ubc6-ubc7 double mutants, CPY* accumulates in the ER, indicating the necessity of an intact cytoplasmic proteolysis machinery for retrograde transport of CPY*. Der3p might serve as a component programming the translocon for retrograde transport of ER proteins, or it might be involved in recognition through its lumenal RING-H2 motif of proteins of the ER that are destined for degradation.