Theoretical investigation of CoSi2/Si1-xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics

We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1-xGex Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1-xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.

Contact and channel modelling using part and function libraries in a function-based design approach

To support the development and analysis of engineering designs at the embodiment stage, designers work iteratively with representations of those designs as they consider the function and form of their constituent parts. Detailed descriptions of "what a machine does" usually include flows of forces and active principles within the technical system, and their localization within parts and across the interfaces between them. This means that a representation should assist a designer in considering form and function at the same time and at different levels of abstraction. This paper describes a design modelling approach that enables designers to break down a system architecture into its subsystems and parts, while assigning functions and flows to parts and the interfaces between them. In turn, this may reveal further requirements to fulfil functions in order to complete the design. The approach is implemented in a software tool which provides a uniform, computable language allowing the user to describe functions and flows as they are iteratively discovered, created and embodied. A database of parts allows the user to search for existing design solutions. The approach is illustrated through an example: modelling the complex mechanisms within a humanoid robot. Copyright © 2010 by ASME.

Moderate energy impact analysis combining phenomenological contact law with localised damage and integral equation method

A computational impact analysis methodology has been developed, based on modal analysis and a local contact force-deflection model. The contact law is based on Hertz contact theory while contact stresses are elastic, defines a modified contact theory to take account of local permanent indentation, and considers elastic recovery during unloading. The model was validated experimentally through impact testing of glass-carbon hybrid braided composite panels. Specimens were mounted in a support frame and the contact force was inferred from the deceleration of the impactor, measured by high-speed photography. A Finite Element analysis of the panel and support frame assembly was performed to compute the modal responses. The new contact model performed well in predicting the peak forces and impact durations for moderate energy impacts (15 J), where contact stresses locally exceed the linear elastic limit and damage may be deemed to have occurred. C-scan measurements revealed substantial damage for impact energies in the range of 30-50 J. For this regime the new model predictions might be improved by characterisation of the contact law hysteresis during the unloading phase, and a modification of the elastic vibration response in line with damage levels acquired during the impact. © 2011 Elsevier Ltd. All rights reserved.

Prediction of tread block forces for a free-rolling tyre in contact with a rough road

This paper describes a new approach to model the forces on a tread block for a free-rolling tyre in contact with a rough road. A theoretical analysis based on realistic tread mechanical properties and road roughness is presented, indicating partial contact between a tread block and a rough road. Hence an asperity-scale indentation model is developed using a semi-empirical formulation, taking into account both the rubber viscoelasticity and the tread block geometry. The model aims to capture the essential details of the contact at the simplest level, to make it suitable as part of a time-domain dynamic analysis of the coupled tyre-road system. The indentation model is found to have a good correlation with the finite element (FE) predictions and is validated against experimental results using a rolling contact rig. When coupled to a deformed tyre belt profile, the indentation model predicts normal and tangential force histories inside the tyre contact patch that show good agreement with FE predictions. © 2012 Elsevier B.V..

Contact dynamics in a gently vibrated granular pile.

We use multispeckle diffusive wave spectroscopy to probe the micron-scale dynamics of a water-saturated granular pile submitted to discrete gentle taps. The typical time scale between plastic events is found to increase dramatically with the number of applied taps. Furthermore, this microscopic dynamics weakly depends on the solid fraction of the sample. This process is largely analogous to the aging phenomenon observed in thermal glassy systems. We propose a heuristic model where this slowing-down mechanism is associated with a slow evolution of the distribution of the contact forces between particles. This model accounts for the main features of the observed dynamics.

Identification of Cj1051c as a Major determinant for the restriction barrier of Campylobacter jejuni StrainNCTC11168

Campylobacter jejuni is a leading cause of human diarrheal illness in the world, and research on it has benefitted greatly by the completion of several genome sequences and the development of molecular biology tools. However, many hurdles remain for a full understanding of this unique bacterial pathogen. One of the most commonly used strains for genetic work with C. jejuni is NCTC11168. While this strain is readily transformable with DNA for genomic recombination, transformation with plasmids is problematic. In this study, we have identified a determinant of this to be cj1051c, predicted to encode a restriction-modification type IIG enzyme. Knockout mutagenesis of this gene resulted in a strain with a 1,000-fold-enhanced transformation efficiency with a plasmid purified from a C. jejuni host. Additionally, this mutation conferred the ability to be transformed by plasmids isolated from an Escherichia coli host. Sequence analysis suggested a high level of variability of the specificity domain between strains and that this gene may be subject to phase variation. We provide evidence that cj1051c is active in NCTC11168 and behaves as expected for a type IIG enzyme. The identification of this determinant provides a greater understanding of the molecular biology of C. jejuni as well as a tool for plasmid work with strain NCTC11168. © 2012, American Society for Microbiology.

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference. © 2011 American Institute of Physics.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.