I. Fundamental limitations in microelectronics. II. Power Schottky diode design and comparison with the junction diode. III. Permittivity of strontium titanate

Part I

The physical phenomena which will ultimately limit the packing density of planar bipolar and MOS integrated circuits are examined. The maximum packing density is obtained by minimizing the supply voltage and the size of the devices. The minimum size of a bipolar transistor is determined by junction breakdown, punch-through and doping fluctuations. The minimum size of a MOS transistor is determined by gate oxide breakdown and drain-source punch-through. The packing density of fully active bipolar or static non-complementary MOS circuits becomes limited by power dissipation. The packing density of circuits which are not fully active such as read-only memories, becomes limited by the area occupied by the devices, and the frequency is limited by the circuit time constants and by metal migration. The packing density of fully active dynamic or complementary MOS circuits is limited by the area occupied by the devices, and the frequency is limited by power dissipation and metal migration. It is concluded that read-only memories will reach approximately the same performance and packing density with MOS and bipolar technologies, while fully active circuits will reach the highest levels of integration with dynamic MOS or complementary MOS technologies.

Part II

Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out before the diode blocks current in the reverse direction, i.e. a much faster recovery time. The disadvantage of the Schottky diode is that for a high voltage device it is not possible to use conductivity modulation as in the p i n diode; since charge carriers are of one sign, no charge cancellation can occur and current becomes space charge limited. The Schottky diode design is developed in Section 2 and the characteristics of an optimally designed silicon Schottky diode are summarized in Fig. 9. Design criteria and quantitative comparison of junction and Schottky diodes is given in Table 1 and Fig. 10. Although somewhat approximate, the treatment allows a systematic quantitative comparison of the devices for any given application.

Part III

We interpret measurements of permittivity of perovskite strontium titanate as a function of orientation, temperature, electric field and frequency performed by Dr. Richard Neville. The free energy of the crystal is calculated as a function of polarization. The Curie-Weiss law and the LST relation are verified. A generalized LST relation is used to calculate the permittivity of strontium titanate from zero to optic frequencies. Two active optic modes are important. The lower frequency mode is attributed mainly to motion of the strontium ions with respect to the rest of the lattice, while the higher frequency active mode is attributed to motion of the titanium ions with respect to the oxygen lattice. An anomalous resonance which multi-domain strontium titanate crystals exhibit below 65°K is described and a plausible mechanism which explains the phenomenon is presented.

谱色散均匀化的计算研究

利用光传输理论对ICF驱动器中使用的光谱色散平滑(SSD)技术作了理论分析，并结合典型的随机相位板(RPP)技术，用计算机模拟了使用光谱色散平滑技术前后激光靶面辐照不均匀性的变化及其技术中不同带宽和调制频率下激光靶面辐照不均匀性的变化。

调Q及连续掺Yb光纤激光器中的自锁模研究

在用半导体激光器抽运的单包层掺Yb调Q光纤激光器中观察到了清晰稳定的自锁模脉冲序列。脉冲包络形状为调Q脉冲。每个锁模脉冲的幅值由其在调Q脉冲中的相应位置决定。经过分析，认为自相位调制是调Q光纤激光器中产生锁模的主要原因。自相位调制的存在使得光脉冲的频谱被展宽，当这种展宽和腔的模式间隔相差不多时，腔内的模式便能相互作用，直到它们之间产生一个固定的相位关系。也即形成锁模。在此基础上。去掉声光晶体，并用两个光栅作为腔镜，实现了全光纤法布里-珀罗(F-P)腔锁模光纤激光器。改变腔结构，分别采用光栅和光纤反射圈作为

基于孔径耦合带状线的激光脉冲整形系统

实现了一种新型的激光脉冲整形系统，该系统使用了一个由孔径耦合带状线（ACSL）电脉冲整形器驱动的电光调制器。一个电脉冲整形器由两条通过其公共接地板上的耦合孔径发生耦合作用的带状传输线所组成的四端口装置。更换具有不同耦合孔径的公共接地板，该电脉冲整形发生器可以具有150ps时间结构的任意整形电脉冲。将任意整形的电脉冲输入到电光调制器上，就可以得到任意整形的激光脉冲。利用该系统，激光脉冲整形系统能够产生具有150ps前后沿，1～3ns脉冲宽度可调、高对比度、光滑过渡以及任意整形的激光脉冲。

Stable single frequency and single polarization DFB fiber lasers operated at 1053 nm

Stable single-frequency and single-polarization distributed-feedback (DFB) fiber laser was realized by giving a pressure on the phase shift region of the fiber grating. The output wavelength of the DFB fiber laser is 1053 nm. When the pump power of 980 nm laser diode is 100 and 254 mW, the output power can reach 8.3 and 37.1 mW and the polarization extinction ratio was 26 and 20 dB, respectively. After chopped by Acousto-optic modulator (0.3 Hz), the pulse peak value variance is 4.65%(peak to peak) and 1.098% (RMS) for 31 min. (C) 2006 Elsevier Ltd. All rights reserved.

高功率激光装置前端系统激光脉冲的时间整形及修正技术

针对激光惯性约束聚变实验研究对高功率激光驱动器前端系统复杂时间形状种子激光脉冲的需求, 应用孔径耦合带状线集成波导整形系统设计了满足需要的前端整形激光脉冲。用一种新方法精确计算了孔径耦合带状线电脉冲整形器的耦合系数和孔径宽度的数值关系, 并针对高衬比度整形激光脉冲的需求, 提出了高衬比度双极型集成波导整形系统方案。由该系统可以得到100 ps脉冲前沿、1～3 ns脉冲宽度可调、高衬比度(大于100∶1)、光滑无纹波调制、可精确满足神光II八路及第九路装置需求的前端整形激光脉冲。

梯度补偿法控温晶体的高功率绿光激光器

研究了平均功率超过30 W的稳定高效全固态绿光激光器,分析得出影响全固态腔内倍频激光器倍频效率和输出稳定性的主要因素是倍频晶体局部温升造成的相位失配和热透镜效应,采用温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,降低激光器工作中倍频晶体内外温度梯度从而有效地克服因晶体局部温升造成的倍频相位匹配角失配和热透镜效应。采用三条60 W的半导体激光二极管阵列板条侧面抽运Nd:YAG激光增益介质棒,采用声光调Q,平凹直腔和腔内倍频结构配合温度梯度补偿控温法对大尺寸倍频晶体进行温度控制,得到了稳定高效的532 nm

基于电光调制的激光光谱整形技术

提出了一种新型的基于电光调制的激光光谱整形方案，该整形技术可以减轻啁啾脉冲放大系统中的增益窄化效应。傅立叶变换限的宽带种子激光脉冲通过光学展宽器线性展宽后，耦合到加载有整形电脉冲的集成波导调制器中进行整形，整形电脉冲由孔径耦合带状线电脉冲发生器产生。由于线性啁啾脉冲时间-频率的直接对应关系，在时域内对宽带种子激光脉冲整形，其光谱也得到了同样形状的整形。模拟了整形光谱形状，相应的整形电脉冲波形，分析了该整形技术的光谱整形分辨率，以及整形过程中引入的相位畸变。

光谱色散后的相位调制光束衍射特性研究

用数值方法研究了激光驱动器系统中使用光谱色散平滑单元后光束的衍射特性、模拟结果表明，光谱色散会使光束衍射光斑变大，近场空间强度均匀性改善，而远场光斑内部存在光强接近于均匀分布的区域．进一步分析了光谱色散平滑单元中相位调制器的调制深度、调制频率及光栅色散系数等主要元件参数对光束传输特性的影响，发现在一定情况下光斑内部会出现较强的强度调制。

Controle da Hanseníase: Detecção precoce através do exame de contatos e avaliação do tratamento dos pacientes submetidos a 12 doses de poliquimioterapia (PQT/OMS)

O diagnóstico precoce e o tratamento são imprescindíveis para o controle da hanseníase, pois visam eliminar o mais precocemente possível as fontes de transmissão. O principal critério de cura da doença é o tempo de tratamento, relacionado às doses fixas da poliquimioterapia. O tempo de tratamento dos pacientes multibacilares foi reduzido de 24 para 12 doses em até 18 meses em 1998. Os objetivos desta tese foram: avaliar a detecção de casos de hanseníase entre os contatos dos pacientes e avaliar fatores de risco associados à piora das incapacidades físicas nos pacientes após a alta do tratamento poliquimioterápico com as 12 doses mensais. Dois artigos foram elaborados. O primeiro artigo avaliou características dos pacientes com hanseníase e de seus contatos associadas ao risco de adoecimento entre os contatos. O segundo artigo avaliou fatores de risco relacionados à piora das incapacidades físicas dos pacientes com hanseníase multibacilar, submetidos ao tratamento com 12 doses fixas da poliquimioterapia. Os resultados mostraram que o risco para hanseníase, relacionado aos contatos foi o tipo de convivência com o caso índice. Entre os fatores dos casos índices, a carga bacilar foi o único associado ao adoecimento dos contatos. Além desses fatores, os contatos que apresentam relação de consangüinidade com o caso índice e os contatos dos pacientes com menor nível de escolaridade mostraram maior chance de se apresentarem doentes no momento do diagnóstico do caso índice. A cicatriz BGC e a vacina recebida após o diagnóstico do caso índice contribuíram independentemente como fatores de proteção. A neuropatia piorou em 40% dos pacientes durante o período de 10 anos após a alta do tratamento. Esta piora foi associada à presença de incapacidades físicas e ao número de lesões cutâneas no momento do diagnóstico assim como à presença de neurite durante o acompanhamento.

基于光时域反射计的全分布式光纤漏油传感器

报道了一种基于光时域反射计的全分布式光纤漏油传感器,该传感器能实现分布式实时监测长输油管道,及时发现小型的漏油事件.传感器沿管道铺设,利用光时域反射计实时测量光纤在长度上的损耗变化特点,及时发现并定位管道上的每一处泄漏事件.模拟实验证明了其实际操作的可行性,长期使用的稳定性和各种抗干扰性,能在15min内发现并定位漏油事件,且定位准确度为3m.

Yb:YAG/YAG复合陶瓷薄片连续和调Q输出特性

采用面泵浦的CAMIL结构，我们研究了970 nm泵浦的Yb:YAG/YAG复合陶瓷薄片激光器，获得了连续和调Q的激光输出。在连续运转情况下，获得了最高1.05 W的激光输出，中心波长为1031 nm，后腔输出镜透射率为2％。我们同时获得了声光调Q的脉冲输出，重复频率从1 kHz到30 kHz，脉宽分别从166 ns到700 ns。

不同腔结构下的声光调Q双包层光纤激光器特性研究

报道了半导体激光器端面抽运不同结构的声光调Q的双包层光纤激光器的脉冲输出特性.对前向、后向不同抽运方式的掺镱调Q双包层光纤激光器在输出平均功率,调Q脉冲宽度及脉冲稳定性进行了对比及讨论;其中后向抽运的光纤激光器,在10kHz重复频率调制下,获得了斜效率为60%的平均功率输出,其脉冲宽度为52ns,单脉冲能量为0·3mJ.最后利用不同抽运方式下的速率方程,理论分析调Q脉冲的特性,分析结果与实验相符.

激光二极管连续抽运电光调Q Nd：YVO4激光器

报道了全固态激光器连续抽运高重复率电光调Q的实验和理论分析结果。用LGS（La3Ga5SiO14）晶体作电光调Q元件，在激光二极管（LD）端面抽运Nd：YVO4激光器中实现了较高重复率的电光调Q输出。实验中在10^4Hz重复率下，抽运功率为28w时，平均功率超过5W，脉冲宽度为7ns，峰值功率为70kW，并对不同重复率时的脉冲输出进行了比较，在低重复率下，脉宽〈6．5ns，峰值功率超过100kW。在理论上，通过对连续抽运时的电光调Q速率方程进行修正，并考虑放大自发辐射（ASE）的影响，对调Q激光器的储能过

输出高重复频率脉冲列的全固态激光器

报道了利用声光振幅调制锁模的方法，在激光二极管端面抽运Nd：YVO4激光器上获得320MHz高重复频率脉冲列的实验结果。实验采用平一平腔结构，腔长452mm，耦合输出镜透过率为3．6％。所用声光介质为熔融石英晶体，以铌酸锂作换能器，在驱动功率4．5W时，对1064nm波长衍射效率为50，相应的调制深度为0．31。在最佳锁模状态下，激光二极管抽运功率为3．5W，此时激光平均输出功率为15mw。示波器记录脉冲宽度680ps，实测光束质量因子M^2小于1．5。并在实验基础上对激光器工作的稳定性进行了分析，结果表