Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV

This paper presents a preliminary theoretical and numerical investigation of 4H-SiC JFET and MOSFET at 6.5 kV. To improve the on-state/breakdown performance of the JFET, buried layers in conjunction with a highly doped buffer layer have been used. Trench technology has been employed for the MOSFET. The devices were simulated and optimized using MEDICI[I] simulator. From the comparison between the two devices, it turns out that the JFET offers a better on-state/breakdown trade-off, while the trench MOSFET has the advantage of MOS-control.

Results of the Austrian-Ceylonese hydrobiological mission 1970 of the 1st Zoological Institute of the University of Vienna (Austria) and the Department of Zoology of the Vidyalankara University of Ceylon, Kelaniya. Pt. 6. A new Drepanosticta from Ceylon (Order: Odonata; insecta)

The author describe a new species of Drepanosticta from Sri Lanka. This new species is named in honour of the collector, Professor Dr. F. Starmühlner.