964 resultados para MOS capacitor


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We address the problem of speech enhancement in real-world noisy scenarios. We propose to solve the problem in two stages, the first comprising a generalized spectral subtraction technique, followed by a sequence of perceptually-motivated post-processing algorithms. The role of the post-processing algorithms is to compensate for the effects of noise as well as to suppress any artifacts created by the first-stage processing. The key post-processing mechanisms are aimed at suppressing musical noise and to enhance the formant structure of voiced speech as well as to denoise the linear-prediction residual. The parameter values in the techniques are fixed optimally by experimentally evaluating the enhancement performance as a function of the parameters. We used the Carnegie-Mellon university Arctic database for our experiments. We considered three real-world noise types: fan noise, car noise, and motorbike noise. The enhancement performance was evaluated by conducting listening experiments on 12 subjects. The listeners reported a clear improvement (MOS improvement of 0.5 on an average) over the noisy signal in the perceived quality (increase in the mean-opinion score (MOS)) for positive signal-to-noise-ratios (SNRs). For negative SNRs, however, the improvement was found to be marginal.

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A new scheme for nine-level voltage space-vector generation for medium-voltage induction motor (IM) drives with open-end stator winding is presented in this paper. The proposed nine-level power converter topology consists of two conventional three-phase two-level voltage source inverters powered by isolated dc sources and six floating-capacitor-connected H-bridges. The H-bridge capacitor voltages are effectively maintained at the required asymmetrical levels by employing a space vector modulation (SVPWM) based control strategy. An interesting feature of this topology is its ability to function in five-or three-level mode, in the entire modulation range, at full-power rating, in the event of any failure in the H-bridges. This feature significantly improves the reliability of the proposed drive system. Each leg of the three-phase two-level inverters used in this topology switches only for a half cycle of the reference voltage waveform. Hence, the effective switching frequency is reduced by half, resulting in switching loss reduction in high-voltage devices. The transient as well as the steady-state performance of the proposed nine-level inverter-fed IM drive system is experimentally verified in the entire modulation range including the overmodulation region.

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Multiferroic materials are characterized by simultaneous magnetic and ferroelectric ordering making them good candidates for magneto-electrical applications. We conducted thermal expansion and magnetostriction measurements in magnetic fields up to 14 T on perovskitic GdMnO3 by highresolution capacitive dilatometry in an effort to determine all longitudinal and transversal components of the magnetostriction tensor. Below the ordering temperature T (N) = 42 K, i.e., within the different complex (incommensurate or complex) antiferromagnetic phases, lattice distortions of up to 100 ppm have been found. Although no change of the lattice symmetry occurs, the measurements reveal strong magneto-structural phenomena, especially in the incommensurate sinusoidal antiferromagnetic phase. A strong anisotropy of the magnetoelastic properties was found, in good agreement with the type and propagation vector of the magnetic structure. We demonstrate that our capacitive dilatometry can detect lattice expansion effects and changes of the dielectric permittivity simultaneously because the sample is housed inside the capacitor. A separation of both effects is possible by shielding the sample. Dielectric transitions could be detected by this method and compared to the critical values of H and T in the magnetic phase diagram. Dielectric changes measured at 1 kHz excitation frequency are detected in GdMnO3 at about 180 K, and between 10 K and 25 K in the canted antiferromagnetic structure which is characterized by a complex magnetic order on both the Gd- and Mn-sites.

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A power filter is necessary to connect the output of a power converter to the grid so as to reduce the harmonic distortion introduced in the line current and voltage by the power converter. Many a times, a transformer is also present before the point of common coupling. Magnetic components often constitute a significant part of the overall weight, size and cost of the grid interface scheme. So, a compact inexpensive design is desirable. A higher-order LCL-filter and a transformer are increasingly being considered for grid interconnection of the power converter. This study proposes a design method based on a three-winding transformer, that generates an integrated structure that behaves as an LCL-filter, with both the filter inductances and the transformer that are merged into a single electromagnetic component. The parameters of the transformer are derived analytically. It is shown that along with a filter capacitor, the transformer parameters provide the filtering action of an LCL-filter. A single-phase full-bridge power converter is operated as a static compensator for performance evaluation of the integrated filter transformer. A resonant integrator-based single-phase phase locked loop and stationary frame AC current controller are employed for grid frequency synchronisation and line current control, respectively.

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We present a computational study on the impact of tensile/compressive uniaxial (epsilon(xx)) and biaxial (epsilon(xx) = epsilon(yy)) strain on monolayer MoS2, n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrodinger solution under the nonequilibrium Green's function formalism is carried out to simulate the MOS device characteristics. 1.75% uniaxial tensile strain is found to provide a minor (6%) ON current improvement for the n-MOSFET, whereas same amount of biaxial tensile strain is found to considerably improve the p-MOSFET ON currents by 2-3 times. Compressive strain, however, degrades both n-MOS and p-MOS devices performance. It is also observed that the improvement in p-MOSFET can be attained only when the channel material becomes indirect gap in nature. We further study the performance degradation in the quasi-ballistic long-channel regime using a projected current method.

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Titanium dioxide (TiO2) thin films are deposited on unheated p-Si (100) and quartz substrates by employing DC reactive magnetron sputtering technique. The effect of post-deposition annealing in air at temperatures in the range 673-973 K on the structural, electrical, and dielectric properties of the films was investigated. The chemical composition of the TiO2 films was analyzed with X-ray photoelectron spectroscopy. The surface morphology of the films was studied by atomic force microscope. The optical band gap of the as-deposited film was 3.50 eV, and it increased to 3.55 eV with the increase in annealing temperature to 773 K. The films annealed at higher temperature of 973 K showed the optical band gap of 3.43 eV. Thin film capacitors were fabricated with the MOS configuration of Al/TiO2/p-Si. The leakage current density of the as-deposited films was 1.2 x 10(-6) A/cm(2), and it decreased to 5.9 x 10(-9) A/cm(2) with the increase in annealing temperature to 973 K. These films showed high dielectric constant value of 36. (C) 2013 Elsevier Ltd. All rights reserved.

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A qualitative MO analysis suggests (PH3)(3)(2-) as a candidate for an all-pseudo-pi* 2 pi-aromatic; however computational studies rule out its existence. Fluorine substitution which increases the contribution of p orbitals on P in the pseudo-pi* MO makes (PF3)(3)(2-) a minimum and an aromatic. The 2 pi aromaticity arising from the bonding combination of the three pseudo-pi* fragment MOs is comparable to that in C3O32- and is another example for the analogy between CO and PF3. The dianion (PF3)(3)(2-) forms the first example of a three-membered ring with all the vertices constituted by pentacoordinate phosphorus. The ability of PF3 to form the all-pseudo-pi* 2 pi-aromatic system is not shared by the heavier analogues, AsF3 and SbF3.

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A low cost, reagent free, Escherichia coli sensor is demonstrated with graphene, on transparent flexible acetate substrate. Graphene is grown on 100 mu m thick Cu foil, using CVD process and subsequently transferred on to a flexible acetate substrate. Gold electrodes are deposited on graphene to form a two terminal, interdigitated capacitor structure. Impedance spectroscopy (10 Hz to 100 kHz) is performed to characterize the change in impedance, as a function of E. coli concentration on graphene surface. The residual methyl groups on graphene, resulting from the transfer process, act as binding sites for E. coli. It has been observed that the resistance of graphene decreases with increasing E. coli concentration. This is due to the increased hole doping induced by negatively charged E. coli. A sensitivity of 60% is achieved for an E. coli concentration of 4.5 x 10(7) cfu/ml. An equivalent RC model is proposed to explain the sensing mechanism. (C) 2013 Elsevier B.V. All rights reserved.

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This paper presents a technique to vary the electric field within a cylindrical ion trap (CIT) mass spectrometer while it is in operation. In this technique, the electrodes of the CIT are split into number of mini-electrodes and different voltages are applied to these split-electrodes to achieve the desired field. In our study we have investigated two geometries of the split-electrode CIT. In the first, we retain the flat endcap electrodes of the CIT but split the ring electrode into five mini-rings. In the second configuration, we split the ring electrode of the CIT into three mini-rings and also divide the endcaps into two mini-discs. By applying different potentials to the mini-rings and mini-discs of these geometries we have shown that the field within the trap can be optimized to desired values. In our study, two different types of fields were targeted. In the first, potentials were adjusted to obtain a linear electric field and, in the second, a controlled higher order even multipole field was obtained by adjusting the potential. We have shown that the different potentials required can be derived from a single RF generator by connecting appropriate capacitor terminations to split electrodes. The field within the trap can be modified by changing the values of the external capacitors. (C) 2013 Elsevier B.V. All rights reserved.

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A new hybrid multilevel power converter topology is presented in this paper. The proposed power converter topology uses only one DC source and floating capacitors charged to asymmetrical voltage levels, are used for generating different voltage levels. The SVPWM based control strategy used in this converter maintains the capacitor voltages at the required levels in the entire modulation range including the over-modulation region. For the voltage levels: nine and above, the number of components required in the proposed topology is significantly lower, compared to the conventional multilevel inverter topologies. The number of capacitors required in this topology reduces drastically compared to the conventional flying capacitor topology, when the number of levels in the inverter output increases. This topology has better fault tolerance, as it is capable of operating with reduced number of levels, in the entire modulation range, in the event of any failure in the H-bridges. The transient as well as the steady state performance of the nine-level version of the proposed topology is experimentally verified in the entire modulation range including the over-modulation region.

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In the present paper, a novel topology for generating a 17-level inverter using three-level flying capacitor inverter and cascaded H-bridge modules with floating capacitors. The proposed circuit is analyzed and various aspects of it are presented in the paper. This circuit is experimentally verified and the results are shown. The stability of the capacitor balancing algorithm has been verified during sudden acceleration. This circuit has many pole voltage redundancies. This circuit has an advantage of balancing all the capacitor voltages instantaneously by switching through the redundancies. Another advantage of this topology is its ability to generate all the 17 pole voltages from a single DC link which enables back to back converter operation. Also, the proposed inverter can be operated at all load power factors and modulation indices. Another advantage is, if one of the H-bridges fail, the inverter can still be operated at full load with reduced number of levels.

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Voltage source inverter (VSI)-fed six-phase induction motor (IM) drives have high 6n +/- 1, n = odd-order harmonic currents. This is because these currents, driven by the corresponding harmonic voltages in the inverter output, are limited only by the stator leakage impedance, as these harmonics are absent in the back electromotive force of the motor. To suppress the harmonic currents, either bulky inductive harmonic filters or complex pulsewidth modulation (PWM) techniques have to be used. This paper proposes a harmonic elimination scheme using switched capacitor filters for a VSI-fed split-phase IM drive. Two 3-phase inverters fed from capacitors are used on the open-end side of the motor to suppress 6n +/- 1, n = odd-order harmonics. A PWM scheme that can suppress the harmonics as well as balance the capacitor voltage is also proposed. The capacitor fed inverters are switched so that the fundamental voltage is not affected, and the fundamental power is always drawn from the main inverters. The proposed scheme is verified with a detailed experimental study. The effectiveness of the scheme is demonstrated by comparing the results with those obtained by disabling the capacitor fed inverters.

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We have investigated the effect of post- deposition annealing on the composition and electrical properties of alumina (Al2O3) thin films. Al2O3 were deposited on n-type Si < 100 >. substrates by dc reactive magnetron sputtering. The films were subjected to post- deposition annealing at 623, 823 and 1023 K in vacuum. X-ray photoelectron spectroscopy results revealed that the composition improved with post- deposition annealing, and the film annealed at 1023 K became stoichiometric with an O/Al atomic ratio of 1.49. Al/Al2O3/Si metal-oxide-semiconductor (MOS) structures were then fabricated, and a correlation between the dielectric constant epsilon(r) and interface charge density Q(i) with annealing conditions were studied. The dielectric constant of the Al2O3 thin films increased to 9.8 with post- deposition annealing matching the bulk value, whereas the oxide charge density decreased to 3.11 x 10(11) cm(-2.) Studies on current-voltage IV characteristics indicated ohmic and Schottky type of conduction at lower electric fields (<0.16 MV cm(-1)) and space charge limited conduction at higher electric fields.

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Carbonization of milk-free coconut kernel pulp is carried out at low temperatures. The carbon samples are activated using KOH, and electrical double-layer capacitor (EDLC) properties are studied. Among the several samples prepared, activated carbon prepared at 600 A degrees C has a large surface area (1,200 m(2) g(-1)). There is a decrease in surface area with increasing temperature of preparation. Cyclic voltammetry and galvanostatic charge-discharge studies suggest that activated carbons derived from coconut kernel pulp are appropriate materials for EDLC studies in acidic, alkaline, and non-aqueous electrolytes. Specific capacitance of 173 F g(-1) is obtained in 1 M H2SO4 electrolyte for the activated carbon prepared at 600 A degrees C. The supercapacitor properties of activated carbon sample prepared at 600 A degrees C are superior to the samples prepared at higher temperatures.

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Multilevel inverters with dodecagonal (12-sided polygon) voltage space vector structure have advantages, such as complete elimination of fifth and seventh harmonics, reduction in electromagnetic interference, reduction in device voltage ratings, reduction of switching frequency, extension of linear modulation range, etc., making it a viable option for high-power medium-voltage drives. This paper proposes two power circuit topologies capable of generating multilevel dodecagonal voltage space vector structure with symmetric triangles (for the first time) with minimum number of dc-link power supplies and floating capacitor H-bridges. The first power topology is composed of two hybrid cascaded five-level inverters connected to either side of an open-end winding induction machine. Each inverter consists of a three-level neutral-point-clamped inverter, which is cascaded with an isolated H-bridge making it a five-level inverter. The second topology is for a normal induction motor. Both of these circuit topologies have inherent capacitor balancing for floating H-bridges for all modulation indexes, including transient operations. The proposed topologies do not require any precharging circuitry for startup. A simple pulsewidth modulation timing calculation method for space vector modulation is also presented in this paper. Due to the symmetric arrangement of congruent triangles within the voltage space vector structure, the timing computation requires only the sampled reference values and does not require any offline computation, lookup tables, or angle computation. Experimental results for steady-state operation and transient operation are also presented to validate the proposed concept.