997 resultados para Highly resistive layer


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(La0.667Ca0.333Mn1-xMO3-delta)-O-x (M = Mg, Li or Re) exhibit insulating behaviour and nonlinear current-voltage (J-E) relationship with voltage-limiting characteristics at temperatures below the ferromagnetic transition (T-c). The high current region is set in at field strengths <60 V/cm. Nonlinearity exponent, alpha in the relation J = kE(alpha) increases inversely with temperature. In presence of an external magnetic field, the J-E curves show higher current density at lower field strengths. Microstructural studies indicate that there is no segregation of secondary phases in the grain boundary regions. There is remarkable changes in p(T) as well as J-E curves with the grain size. Annealing studies in lower p(O2) atmospheres indicate that there is significant out-diffusion of oxygen ions through the grain boundary layer (GBL) regions creating oxygen vacancies in the GBL regions. The concentration of Mn4+ ions is lowered at the GBL due to oxygen vacancies, reducing the probability of hopping and resulting in insulating behaviour. Therefore an insulating barrier is introduced between two conducting grains and the carrier motion between the grains is inhibited. Thus below T-c, where sufficient increase in resistivity is observed the conduction may be arising as a result of spin dependent tunneling across the barrier. External electric field lowers the barrier height and establishes carrier transport across the barrier. Above certain field strength, barrier height diminishes significantly and thereby allowing large number of carriers for conduction, giving rise to highly nonlinear conductivity. (C) 2002 Elsevier Science B.V. All rights reserved.

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The equivalent coefficient of permeability of a stratified soil system calculated theoretically has been observed to be not the same as that directly measured, when the flow is normal to the orientation of the bedding planes. A hypothesis has been proposed in this investigation to explain this deviation according to which the permeability of the exit layer controls whether the measured permeability is greater or lesser than the theoretically calculated value. The proposed hypothesis has been used to successfully and satisfactorily explain the experimental observations made with the two-layer systems. It has been shown that the coefficient of permeability of a soil in a layered system cannot be considered as its property and that it depends upon the permeabilities of adjoining layers, their thicknesses, and the flow direction.

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Backoff algorithms are typically employed in multiple-access networks (e.g., Ethernet) to recover from packet collisions. In this letter, we propose and carry out the analysis for three types of link-layer backoff schemes, namely, linear backoff, exponential backoff, and geometric backoff, on point-to-point wireless fading links where packet errors occur nonindependently. In such a scenario, the backoff schemes are shown to achieve better energy efficiency without compromising much on the link layer throughput performance.

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We present a simplified theory of carrier backscattering coefficient in a twofold degenerate asymmetric bilayer graphene nanoribbon (BGN) under the application of a low static electric field. We show that for a highly asymmetric BGN(Delta = gamma), the density of states in the lower subband increases more that of the upper, in which Delta and gamma are the gap and the interlayer coupling constant, respectively. We also demonstrate that under the acoustic phonon scattering regime, the formation of two distinct sets of energy subbands signatures a quantized transmission coefficient as a function of ribbon width and provides an extremely low carrier reflection coefficient for a better Landauer conductance even at room temperature. The well-known result for the ballistic condition has been obtained as a special case of the present analysis under certain limiting conditions which forms an indirect validation of our theoretical formalism.

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Using a hot wire in a turbulent boundary layer in air, an experimental study has been made of the frequent periods of activity (to be called ‘bursts’) noticed in a turbulent signal that has been passed through a narrow band-pass filter. Although definitive identification of bursts presents difficulties, it is found that a reasonable characteristic value for the mean interval between such bursts is consistent, at the same Reynolds number, with the mean burst periods measured by Kline et al. (1967), using hydrogen-bubble techniques in water. However, data over the wider Reynolds number range covered here show that, even in the wall or inner layer, the mean burst period scales with outer rather than inner variables; and that the intervals are distributed according to the log normal law. It is suggested that these ‘bursts’ are to be identified with the ‘spottiness’ of Landau & Kolmogorov, and the high-frequency intermittency observed by Batchelor & Townsend. It is also concluded that the dynamics of the energy balance in a turbulent boundary layer can be understood only on the basis of a coupling between the inner and outer layers.

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A new type of bearing alloy containing ultrafine sized tin and silicon dispersions in aluminum was designed using laser surface alloying and laser remelting techniques. The microstructures of these non-equilibrium processed alloys were studied in detail using scanning and transmission electron microscopy. The microstructures revealed three distinct morphologies of tin particles namely elongated particles co-existing with silicon, globular particles, and very fine particles. Our detailed analyses using cellular growth theories showed that the formation of these globular tin particles was due to the pinching off of the tin rich liquid in the inter-cellular space by the growth of aluminum secondary dendrite arms. Evidence of fine recrystallized aluminum grains at the top layer due to constrained solidification was shown. Thermal analyses suggested that melting of the spherical shaped tin particles was controlled by the binary aluminum-tin eutectic reaction, whereas non-spherical tin particles melted via the tin-silicon eutectic reaction.

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Transition in the boundary layer on a flat plate is examined from the point of view of intermittent production of turbulent spots. On the hypothesis of localized laminar breakdown, for which there is some expermental evidence, Emmons’ probability calculations can be extended to explain the observed statistical similarity of transition regions. Application of these ideas allows detailed calculations of the boundary layer parameters including mean velocity profiles and skin friction during transition. The mean velocity profiles belong to a universal one-parameter family with the intermittency factor as the parameter. From an examination of experimental data the probable existence of a relation between the transition Reynolds number and the rate of production of the turbulent spots is deduced. A simple new technique for the measurement of the intermittency factor by a Pitot tube is reported.

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Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage (VFB) and charge trapping and de-trapping causes hysterectic changes on voltage cycling. Both phenomena affect stable and reliable transistor operation. In this paper we have studied for the first time the effect of post-metallization hydrogen annealing on the C-V curve of MOS capacitors employing zirconia, one of the most promising gate dielectric. Samples were annealed in hydrogen ambient for up to 30 minutes at different temperatures ranging from room temperature to 400°C. C-V measurements were done after annealing at each temperature and the hysteresis width was calculated from the C-V curves. A minimum hysteresis width of ∼35 mV was observed on annealing the sample at 200°C confirming the excellent suitability of this dielectric

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Experiments on reverse transition were conducted in two-dimensional accelerated incompressible turbulent boundary layers. Mean velocity profiles, longitudinal velocity fluctuations $\tilde{u}^{\prime}(=(\overline{u^{\prime 2}})^{\frac{1}{2}})$ and the wall-shearing stress (TW) were measured. The mean velocity profiles show that the wall region adjusts itself to laminar conditions earlier than the outer region. During the reverse transition process, increases in the shape parameter (H) are accompanied by a decrease in the skin friction coefficient (Cf). Profiles of turbulent intensity (u’2) exhibit near similarity in the turbulence decay region. The breakdown of the law of the wall is characterized by the parameter \[ \Delta_p (=\nu[dP/dx]/\rho U^{*3}) = - 0.02, \] where U* is the friction velocity. Downstream of this region the decay of $\tilde{u}^{\prime}$ fluctuations occurred when the momentum thickness Reynolds number (R) decreased roughly below 400.

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A constant-pressure axisymmetric turbulent boundary layer along a circular cylinder of radius a is studied at large values of the frictional Reynolds number a+ (based upon a) with the boundary-layer thickness δ of order a. Using the equations of mean motion and the method of matched asymptotic expansions, it is shown that the flow can be described by the same two limit processes (inner and outer) as are used in two-dimensional flow. The condition that the two expansions match requires the existence, at the lowest order, of a log region in the usual two-dimensional co-ordinates (u+, y+). Examination of available experimental data shows that substantial log regions do in fact exist but that the intercept is possibly not a universal constant. Similarly, the solution in the outer layer leads to a defect law of the same form as in two-dimensional flow; experiment shows that the intercept in the defect law depends on δ/a. It is concluded that, except in those extreme situations where a+ is small (in which case the boundary layer may not anyway be in a fully developed turbulent state), the simplest analysis of axisymmetric flow will be to use the two-dimensional laws with parameters that now depend on a+ or δ/a as appropriate.

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We report unipolar resistive switching in ultrathin films of chemically produced graphene (reduced graphene oxide) and multiwalled carbon nanotubes. The two-terminal devices with yield >99% are made at room temperature by forming continuous films of graphene of thickness similar to 20 nm on indium tin oxide coated glass electrode, followed by metal (Au or Al) deposition on the film. These memory devices are nonvolatile, rewritable with ON/OFF ratios up to similar to 10(5) and switching times up to 10 mu s. The devices made of MWNT films are rewritable with ON/OFF ratios up to similar to 400. The resistive switching mechanism is proposed to be nanogap formation and filamentary conduction paths. (C) 2011 Elsevier Ltd. All rights reserved.