A two-dimensional finite element model of front surface current flow in cells under non-uniform, concentrated illumination

A two-dimensional finite element model of current flow in the front surface of a PV cell is presented. In order to validate this model we perform an experimental test. Later, particular attention is paid to the effects of non-uniform illumination in the finger direction which is typical in a linear concentrator system. Fill factor, open circuit voltage and efficiency are shown to decrease with increasing degree of non-uniform illumination. It is shown that these detrimental effects can be mitigated significantly by reoptimization of the number of front surface metallization fingers to suit the degree of non-uniformity. The behavior of current flow in the front surface of a cell operating at open circuit voltage under non-uniform illumination is discussed in detail.

Electric current of an electrified jet issuing from a long metallic tube.

This paper presents an analysis of the transport of electric current in a jet of an electrically conducting liquid discharging from a metallic tube into a gas or a vacuum, and subject to an electric field due to a high voltage applied between the tube and a far electrode. The flow, the surface charge and the electric field are computed in the current transfer region of the jet, where conduction current in the liquid becomes surface current due to the convection of electric charge accumulated at its surface. The electric current computed as a function of the flow rate of the liquid injected through the tube increases first as the square root of this flow rate, levels to a nearly constant value when the flow rate is increased and finally sets to a linear increase when the flow rate is further increased. The current increases linearly with the applied voltage at small and moderate values of this variable, and faster than linearly at high voltages. The characteristic length and structure of the current transfer region are determined. Order-of-magnitude estimates for jets which are only weakly stretched by the electric stresses are worked out that qualitatively account for some of the numerical results.

Modelling of quantum dot solar cells for concentrator PV applications

An equivalent circuit model is applied in order to describe the operation characteristics of quantum dot intermediate band solar cells (QD-IBSCs), which accounts for the recombination paths of the intermediate band (IB) through conduction band (CB), the valence band (VB) through IB, and the VB-CB transition. In this work, fitting of the measured dark J-V curves for QD-IBSCs (QD region being non-doped or direct Si-doped to n-type) and a reference GaAs p-i-n solar cell (no QDs) were carried out using this model in order to extract the diode parameters. The simulation was then performed using the extracted diode parameters to evaluate solar cell characteristics under concentration. In the case of QDSC with Si-doped (hence partially-filled) QDs, a fast recovery of the open-circuit voltage (Voc) was observed in a range of low concentration due to the IB effect. Further, at around 100X concentration, Si-doped QDSC could outperform the reference GaAs p-i-n solar cell if the current source of IB current source were sixteen times to about 10mA/cm2 compared to our present cell.

Influence of Current Pulse Shape on Directly Modulated Systems Performance in Metro Area Optical Networks

Due to the fact that a metro network market is very cost sensitive, direct modulated schemes appear attractive. In this paper a CWDM (Coarse Wavelength Division Multiplexing) system is studied in detail by means of an Optical Communication System Design Software; a detailed study of the modulated current shape (exponential, sine and gaussian) for 2.5 Gb/s CWDM Metropolitan Area Networks is performed to evaluate its tolerance to linear impairments such as signal-to-noise-ratio degradation and dispersion. Point-to-point links are investigated and optimum design parameters are obtained. Through extensive sets of simulation results, it is shown that some of these shape pulses are more tolerant to dispersion when compared with conventional gaussian shape pulses. In order to achieve a low Bit Error Rate (BER), different types of optical transmitters are considered including strongly adiabatic and transient chirp dominated Directly Modulated Lasers (DMLs). We have used fibers with different dispersion characteristics, showing that the system performance depends, strongly, on the chosen DML?fiber couple.

Non-linear gain - look-up table based approach for modeling a family of DC to DC converters based on transient response analysis

The purpose of this work is to propose a structure for simulating power systems using behavioral models of nonlinear DC to DC converters implemented through a look-up table of gains. This structure is specially designed for converters whose output impedance depends on the load current level, e.g. quasi-resonant converters. The proposed model is a generic one whose parameters can be obtained by direct measuring the transient response at different operating points. It also includes optional functionalities for modeling converters with current limitation and current sharing in paralleling characteristics. The pusposed structured also allows including aditional characteristics of the DC to DC converter as the efficency as a function of the input voltage and the output current or overvoltage and undervoltage protections. In addition, this proposed model is valid for overdamped and underdamped situations.

Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras

Esta memoria está basada en el crecimiento y caracterización de heteroestructuras Al(Ga)N/GaN y nanocolumnas ordenadas de GaN, y su aplicación en sensores químicos. El método de crecimiento ha sido la epitaxia de haces moleculares asistida por plasma (PAMBE). En el caso de las heteroestructuras Al(Ga)N/GaN, se han crecido barreras de distinto espesor y composición, desde AlN de 5 nm, hasta AlGaN de 35 nm. Además de una caracterización morfológica, estructural y eléctrica básica de las capas, también se han fabricado a partir de ellas dispositivos tipo HEMTs. La caracterización eléctrica de dichos dispositivos (carga y movilidad de en el canal bidimensional) indica que las mejores heteroestructuras son aquellas con un espesor de barrera intermedio (alrededor de 20 nm). Sin embargo, un objetivo importante de esta Tesis ha sido verificar las ventajas que podían tener los sensores basados en heteroestructuras AlN/GaN (frente a los típicos basados en AlGaN/GaN), con espesores de barrera muy finos (alrededor de 5 nm), ya que el canal de conducción que se modula por efecto de cambios químicos está más cerca de la superficie en donde ocurren dichos cambios químicos. De esta manera, se han utilizado los dispositivos tipo HEMTs como sensores químicos de pH (ISFETs), y se ha comprobado la mayor sensibilidad (variación de corriente frente a cambios de pH, Ids/pH) en los sensores basados en AlN/GaN frente a los basados en AlGaN/GaN. La mayor sensibilidad es incluso más patente en aplicaciones en las que no se utiliza un electrodo de referencia. Se han fabricado y caracterizado dispositivos ISFET similares utilizando capas compactas de InN. Estos sensores presentan peor estabilidad que los basados en Al(Ga)N/GaN, aunque la sensibilidad superficial al pH era la misma (Vgs/pH), y su sensibilidad en terminos de corriente de canal (Ids/pH) arroja valores intermedios entre los ISFET basados en AlN/GaN y los valores de los basados en AlGaN/GaN. Para continuar con la comparación entre dispositivos basados en Al(Ga)N/GaN, se fabricaron ISFETs con el área sensible más pequeña (35 x 35 m2), de tamaño similar a los dispositivos destinados a las medidas de actividad celular. Sometiendo los dispositivos a pulsos de voltaje en su área sensible, la respuesta de los dispositivos de AlN presentaron menor ruido que los basados en AlGaN. El ruido en la corriente para dispositivos de AlN, donde el encapsulado no ha sido optimizado, fue tan bajo como 8.9 nA (valor rms), y el ruido equivalente en el potencial superficial 38.7 V. Estos valores son más bajos que los encontrados en los dispositivos típicos para la detección de actividad celular (basados en Si), y del orden de los mejores resultados encontrados en la literatura sobre AlGaN/GaN. Desde el punto de vista de la caracterización electro-química de las superficies de GaN e InN, se ha determinado su punto isoeléctrico. Dicho valor no había sido reportado en la literatura hasta el momento. El valor, determinado por medidas de “streaming potential”, es de 4.4 y 4 respectivamente. Este valor es una importante característica a tener en cuenta en sensores, en inmovilización electrostática o en la litografía coloidal. Esta última técnica se discute en esta memoria, y se aplica en el último bloque de investigación de esta Tesis (i.e. crecimiento ordenado). El último apartado de resultados experimentales de esta Tesis analiza el crecimiento selectivo de nanocolumnas ordenadas de GaN por MBE, utilizando mascaras de Ti con nanoagujeros. Se ha estudiado como los distintos parámetros de crecimiento (i.e. flujos de los elementos Ga y N, temperatura de crecimiento y diseño de la máscara) afectan a la selectividad y a la morfología de las nanocolumnas. Se ha conseguido con éxito el crecimiento selectivo sobre pseudosustratos de GaN con distinta orientación cristalina o polaridad; templates de GaN(0001)/zafiro, GaN(0001)/AlN/Si, GaN(000-1)/Si y GaN(11-20)/zafiro. Se ha verificado experimentalmente la alta calidad cristalina de las nanocolumnas ordenadas, y su mayor estabilidad térmica comparada con las capas compactas del mismo material. Las nanocolumnas ordenadas de nitruros del grupo III tienen una clara aplicación en el campo de la optoelectrónica, principalmente para nanoemisores de luz blanca. Sin embargo, en esta Tesis se proponen como alternativa a la utilización de capas compactas o nanocolumnas auto-ensambladas en sensores. Las nanocolumnas auto-ensambladas de GaN, debido a su alta razón superficie/volumen, son muy prometedoras en el campo de los sensores, pero su amplia dispersión en dimensiones (altura y diámetro) supone un problema para el procesado y funcionamiento de dispositivos reales. En ese aspecto, las nanocolumnas ordenadas son más robustas y homogéneas, manteniendo una alta relación superficie/volumen. Como primer experimento en el ámbito de los sensores, se ha estudiado como se ve afectada la emisión de fotoluminiscencia de las NCs ordenadas al estar expuestas al aire o al vacio. Se observa una fuerte caída en la intensidad de la fotoluminiscencia cuando las nanocolumnas están expuestas al aire (probablemente por la foto-adsorción de oxigeno en la superficie), como ya había sido documentado anteriormente en nanocolumnas auto-ensambladas. Este experimento abre el camino para futuros sensores basados en nanocolumnas ordenadas. Abstract This manuscript deals with the growth and characterization of Al(Ga)N/GaN heterostructures and GaN ordered nanocolumns, and their application in chemical sensors. The growth technique has been the plasma-assisted molecular beam epitaxy (PAMBE). In the case of Al(Ga)N/GaN heterostructures, barriers of different thickness and composition, from AlN (5 nm) to AlGaN (35 nm) have been grown. Besides the basic morphological, structural and electrical characterization of the layers, HEMT devices have been fabricated based on these layers. The best electrical characteristics (larger carriers concentration and mobility in the two dimensional electron gas) are those in AlGaN/GaN heterostructures with a medium thickness (around 20 nm). However, one of the goals of this Thesis has been to verify the advantages that sensors based on AlN/GaN (thickness around 7 nm) have compared to standard AlGaN/GaN, because the conduction channel to be modulated by chemical changes is closer to the sensitive area. In this way, HEMT devices have been used as chemical pH sensors (ISFETs), and the higher sensitivity (conductance change related to pH changes, Ids/pH) of AlN/GaN based sensors has been proved. The higher sensibility is even more obvious in application without reference electrode. Similar ISFETs devices have been fabricated based on InN compact layers. These devices show a poor stability, but its surface sensitivity to pH (Vgs/pH) and its sensibility (Ids/pH) yield values between the corresponding ones of AlN/GaN and AlGaN/GaN heterostructures. In order to a further comparison between Al(Ga)N/GaN based devices, ISFETs with smaller sensitive area (35 x 35 m2), similar to the ones used in cellular activity record, were fabricated and characterized. When the devices are subjected to a voltage pulse through the sensitive area, the response of AlN based devices shows lower noise than the ones based on AlGaN. The noise in the current of such a AlN based device, where the encapsulation has not been optimized, is as low as 8.9 nA (rms value), and the equivalent noise to the surface potential is 38.7 V. These values are lower than the found in typical devices used for cellular activity recording (based on Si), and in the range of the best published results on AlGaN/GaN. From the point of view of the electrochemical characterization of GaN and InN surfaces, their isoelectric point has been experimentally determined. Such a value is the first time reported for GaN and InN surfaces. These values are determined by “streaming potential”, being pH 4.4 and 4, respectively. Isoelectric point value is an important characteristic in sensors, electrostatic immobilization or in colloidal lithography. In particular, colloidal lithography has been optimized in this Thesis for GaN surfaces, and applied in the last part of experimental results (i.e. ordered growth). The last block of this Thesis is focused on the selective area growth of GaN nanocolumns by MBE, using Ti masks decorated with nanoholes. The effect of the different growth parameters (Ga and N fluxes, growth temperature and mask design) is studied, in particular their impact in the selectivity and in the morphology of the nanocolumns. Selective area growth has been successful performed on GaN templates with different orientation or polarity; GaN(0001)/sapphire, GaN(0001)/AlN/Si, GaN(000- 1)/Si and GaN(11-20)/sapphire. Ordered nanocolumns exhibit a high crystal quality, and a higher thermal stability (lower thermal decomposition) than the compact layers of the same material. Ordered nanocolumns based on III nitrides have a clear application in optoelectronics, mainly for white light nanoemitters. However, this Thesis proposes them as an alternative to compact layers and self-assembled nanocolumns in sensor applications. Self-assembled GaN nanocolumns are very appealing for sensor applications, due to their large surface/volume ratio. However, their large dispersion in heights and diameters are a problem in terms of processing and operation of real devices. In this aspect, ordered nanocolumns are more robust and homogeneous, keeping the large surface/volume ratio. As first experimental evidence of their sensor capabilities, ordered nanocolumns have been studied regarding their photoluminiscence on air and vacuum ambient. A big drop in the intensity is observed when the nanocolumns are exposed to air (probably because of the oxygen photo-adsortion), as was already reported in the case of self-assembled nanocolumns. This opens the way to future sensors based on ordered III nitrides nanocolumns.

Improvement of the Dynamic Performance of a Buck Converter using Controlled Current Source as an Additional Energy Path

This work is related to the improvement of the dynamic performance of the Buck converter by means of introducing an additional power path that virtually increase s the output capacitance during transients, thus improving the output impedance of the converter. It is well known that in VRM applications, with wide load steps, voltage overshoots and undershoots ma y lead to undesired performance of the load. To solve this problem, high-bandwidth high-switching frequency power converter s can be applied to reduce the transient time or a big output capacitor can be applied to reduce the output impedance. The first solution can degrade the efficiency by increasing switching losses of the MOSFETS, and the second solution is penalizing the cost and size of the output filter. The additional energy path, as presented here, is introduced with the Output Impedance Correction Circuit (OICC) based on the Controlled Current Source (CCS). The OICC is using CCS to inject or extract a current n - 1 times larger than the output capacitor current, thus virtually increasing n times the value of the output capacitance during the transients. This feature allows the usage of a low frequency Buck converter with smaller capacitor but satisfying the dynamic requirements.

Instrumentación de referencia para realización automática de ensayos de fiabilidad

En todo proceso de desarrollo de un dispositivo electrónico o equipo cabe la necesidad de evaluar la fiabilidad de sus componentes, es decir, cual es el porcentaje de equipos que tras un determinado periodo de vida mantiene todas sus funcionalidades dentro de especificaciones. La evaluación de la fiabilidad mediante ensayos acelerados es la herramienta que permite una estimación de la vida del dispositivo o equipo de forma previa a su comercialización. La cuantificación de la fiabilidad es crítica para identificar los costos de un determinado periodo de garantía, y para ofrecer a los clientes el nivel de calidad deseado. El objetivo de este Proyecto Fin de Carrera, es el diseño de un sistema automático de instrumentación versátil, para la realización y caracterización de ensayos acelerados, el cual nos sirva para abordar una amplia gama de ensayos con los que evaluar la fiabilidad de los dispositivos electrónicos o equipos. Además del uso industrial donde se evaluará la fiabilidad de forma previa a la comercialización, este sistema se podrá emplear en la docencia de esta área, y fundamentalmente para la realización de ensayos acelerados en investigación de dispositivos electrónicos. La versatilidad de nuestro hardware y aplicación software es un punto a favor, ya que con este sistema de instrumentación se pueden realizar numerosos tipos de ensayos acelerados, sin el problema de tener que cambiar toda la instrumentación, cada vez que se quiera realizar otro ensayo distinto. Los componentes que se elijan para realizar el ensayo acelerado, serán sometidos a un estrés (tensión, corriente, humedad, temperatura…) y se podrá ir observando cómo envejecen, lo que nos permite evaluar la vida del dispositivo en un corto periodo, emulando sus condiciones de trabajo, además de estudiar la fiabilidad también se puede identificar como se degradan sus características principales antes del fallo. El Software utilizado en este Proyecto se ha implementado con un lenguaje de programación gráfico para instrumentación, LabVIEW. La aplicación software se explica de manera muy detallada a lo largo de la memoria, para que su uso y adaptación si fuese necesario no suponga ningún problema para el usuario. En la última parte de esta memoria se encuentra la guía de usuario y un ensayo acelerado planteado como ejemplo. Explicaremos como se han interconectado los equipos a los componentes en los que se va a realizar el ensayo y así se comprobará el correcto funcionamiento del software tomando las medidas necesarias. ABTRACT In all process of development of an electronic device or equipment, we have the need to evaluate the reliability of its components, that is to say, what percentage of equipment that after a certain period of life keeps all of its functionalities within specifications. The evaluation of reliability by means of accelerated tests is the tool that allows an estimation of the lifetime of the device or equipment prior to its marketing. The quantification of reliability is critical to identify the costs of a specific warranty period, and to offer customers the desired quality level. The objective of this Thesis is the design of an automatic very versatile instrument for the realization and characterization of accelerated tests, which will help us to address a wide range of tests to assess the reliability of the devices or electronic equipment. In addition to industrial use where test the reliability before its commercialization, use it can be used in teaching of this area, fundamentally for the realization of accelerated testing in the investigation of electronic devices. The versatility of our hardware and software implementation is a plus, given that this instrumentation system can perform numerous types of accelerated tests, without the problem to have to change everything, every time you want to make another different test. The components that will be chosen to perform the accelerated test, will be subjected to stress (voltage, current, humidity, temperature ...) and you can observe how they age, allowing us to evaluate the life of the device in a short period, emulating their working conditions. In addition to studying the reliability it can also identify how its main characteristics are degraded before failure. The software used in this Thesis has been implemented with a graphical programming language for instrumentation, LabVIEW. This software is explained in great detail throughout the Thesis, so that its use and adaptation, if necessary, will not be a problem for the user. In the last part of this memory we will expose a user guide and test that we have done. We will explain how the equipment has been interconnected to the components in which we are going to perform the test and so we will check the correct operation of the software taking the necessary measures.

Magnetic self-field effects on bare-tether current collection

It has been recently suggested that the magnetic field created by the current in a bare tether could sensibly reduce its electron collection capability in the magnetised ionosphere, a region of closed magnetic surfaces disconnecting the cylinder from infinity. In this paper, the ohmic voltage drop along the tether is taken into account in considering self-field effects. Separate analyses are carried out for the thrust and power generation and drag modes of operation, which are affected in different ways. In the power generation and drag modes, bias decreases as current increases along the tether, starting at the anodic, positively-biased end (upper end in the usual, eastward-flying spacecraft); in the thrust mode of operation, bias increases as current increases along the tether, starting at the lower end. When the ohmic voltage drop is considered, self-field effects are shown to be weak, in all cases, for tape tethers, and for circular cross-section tethers just conductive in a thin outer layer. Self-field effects might become important, in the drag case only, for tethers with fully conductive cross sections that are unrealistically heavy.

Experimental and modeling analysis of internal luminescence in III-V solar cells

In high quality solar cells, the internal luminescence can be harnessed to enhance the overall performance. Internal confinement of the photons can lead to an increased open-circuit voltage and short-circuit current. Alternatively, in multijunction solar cells the photons can be coupled from a higher bandgap junction to a lower bandgap junction for enhanced performance. We model the solar cell as an optical cavity and compare calculated performance characteristics with measurements. We also describe how very high luminescent coupling alleviates the need for top-cell thinning to achieve current-matching.

Advanced Control for Very Fast DC-DC Converters Based on Hysteresis of the C-out Current

The bandwidth achievable by using voltage mode control or current mode control in switch-mode power supply is limited by the switching frequency. Fast transient response requires high switching frequency, although lower switching frequencies could be more suitable for higher efficiency. This paper proposes the use of hysteretic control of the output capacitor $(C_{out})$ current to improve the dynamic response of the buck converter. An external voltage loop is required to accurately regulate the output voltage. The design of the hysteretic loop and the voltage loop are presented. Besides, it is presented a non-invasive current sensor that allows measuring the current in the capacitor. This strategy has been applied for DVS (dynamic voltage scaling) on a 5 MHz buck converter. Experimental results validate the proposed control technique and show fast transient response from 1.5 V to 2.5 V in 2 $mu{rm s}$.

Improvement of the Dynamic Performance of a Multiphase Current Controlled Buck Converter using an Auxiliary Synchronous Buck Converter as an Additional Energy Path

This work is related to the output impedance improvement of a Multiphase Buck converter with Peak Current Mode Control (PCMC) by means of introducing an additional power path that virtually increases the output capacitance during transients. Various solutions that can be employed to improve the dynamic behavior of the converter system exist, but nearly all solutions are developed for a Single Phase Buck converter with Voltage Mode Control (VMC), while in the VRM applications, due to the high currents, the system is usually implemented as a Multiphase Buck Converter with Current Mode Control. The additional energy path, as presented here, is introduced with the Output Impedance Correction Circuit (OICC) based on the Controlled Current Source (CCS). The OICC is used to inject or extract a current n-1 times larger than the output capacitor current, thus virtually increasing n times the value of the output capacitance during the transients. Furthermore, this work extends the OICC concept to a Multiphase Buck Converter system while comparing proposed solution with the system that has n times bigger output capacitor. In addition, the OICC is implemented as a Synchronous Buck Converter with PCMC, thus reducing its influence on the system efficiency.

Multiphase Current Controlled Buck Converter with energy recycling Output Impedance Correction Circuit (OICC)

This work is related to the output impedance improvement of a Multiphase Buck converter with Peak Current Mode Control (PCMC) by means of introducing an additional power path that virtually increases the output capacitance during transients. Various solutions that can be employed to improve the dynamic behavior of the converter system exist, but nearly all solutions are developed for a Single Phase Buck converter with Voltage Mode Control (VMC), while in the VRM applications, due to the high currents, the system is usually implemented as a Multiphase Buck Converter with Current Mode Control. The Output Impedance Correction Circuit (OICC) is used to inject or extract a current n-1 times larger than the output capacitor current, thus virtually increasing n times the value of the output capacitance during the transients. Furthermore, this work extends the OICC concept to a Multiphase Buck Converter system while comparing proposed solution with the system that has n times bigger output capacitor. In addition, the OICC is implemented as a Synchronous Buck Converter with PCMC, thus reducing its influence on the system efficiency

Drifting plasma collection by a positive biased tether wire in LEO-like plasma conditions: current measurement and plasma diagnostic

BETs is a three-year project financed by the Space Program of the European Commission, aimed at developing an efficient deorbit system that could be carried on board any future satellite launched into Low Earth Orbit (LEO). The operational system involves a conductive tape-tether left bare to establish anodic contact with the ambient plasma as a giant Langmuir probe. As a part of this project, we are carrying out both numerical and experimental approaches to estimate the collected current by the positive part of the tether. This paper deals with experimental measurements performed in the IONospheric Atmosphere Simulator (JONAS) plasma chamber of the Onera-Space Environment Department. The JONAS facility is a 9- m3 vacuum chamber equipped with a plasma source providing drifting plasma simulating LEO conditions in terms of density and temperature. A thin metallic cylinder, simulating the tether, is set inside the chamber and polarized up to 1000 V. The Earth's magnetic field is neutralized inside the chamber. In a first time, tether collected current versus tether polarization is measured for different plasma source energies and densities. In complement, several types of Langmuir probes are used at the same location to allow the extraction of both ion densities and electron parameters by computer modeling (classical Langmuir probe characteristics are not accurate enough in the present situation). These two measurements permit estimation of the discrepancies between the theoretical collection laws, orbital motion limited law in particular, and the experimental data in LEO-like conditions without magnetic fields. In a second time, the spatial variations and the time evolutions of the plasma properties around the tether are investigated. Spherical and emissive Langmuir probes are also used for a more extensive characterization of the plasma in space and time dependent analysis. Results show the ion depletion because of the wake effect and the accumulation of- ions upstream of the tether. In some regimes (at large positive potential), oscillations are observed on the tether collected current and on Langmuir probe collected current in specific sites.

Wide bandwidth envelope trackers with reduced switching frequency for RF power amplifier

El requerimiento de proveer alta frecuencia de datos en los modernos sistema de comunicación inalámbricos resulta en complejas señales moduladas de radio-frequencia (RF) con un gran ancho de banda y alto ratio pico-promedio (PAPR). Para garantizar la linealidad del comportamiento, los amplificadores lineales de potencia comunes funcionan típicamente entre 4 y 10 dB de back-o_ desde la máxima potencia de salida, ocasionando una baja eficiencia del sistema. La eliminación y restauración de la evolvente (EER) y el seguimiento de la evolvente (ET) son dos prometedoras técnicas para resolver el problema de la eficiencia. Tanto en EER como en ET, es complicado diseñar un amplificador de potencia que sea eficiente para señales de RF de alto ancho de banda y alto PAPR. Una propuesta común para los amplificadores de potencia es incluir un convertidor de potencia de muy alta eficiencia operando a frecuencias más altas que el ancho de banda de la señal RF. En este caso, la potencia perdida del convertidor ocasionado por la alta frecuencia desaconseja su práctica cuando el ancho de banda es muy alto. La solución a este problema es el enfoque de esta disertación que presenta dos arquitecturas de amplificador evolvente: convertidor híbrido-serie con una técnica de evolvente lenta y un convertidor multinivel basado en un convertidor reductor multifase con control de tiempo mínimo. En la primera arquitectura, una topología híbrida está compuesta de una convertidor reductor conmutado y un regulador lineal en serie que trabajan juntos para ajustar la tensión de salida para seguir a la evolvente con precisión. Un algoritmo de generación de una evolvente lenta crea una forma de onda con una pendiente limitada que es menor que la pendiente máxima de la evolvente original. La salida del convertidor reductor sigue esa forma de onda en vez de la evolvente original usando una menor frecuencia de conmutación, porque la forma de onda no sólo tiene una pendiente reducida sino también un menor ancho de banda. De esta forma, el regulador lineal se usa para filtrar la forma de onda tiene una pérdida de potencia adicional. Dependiendo de cuánto se puede reducir la pendiente de la evolvente para producir la forma de onda, existe un trade-off entre la pérdida de potencia del convertidor reductor relacionada con la frecuencia de conmutación y el regulador lineal. El punto óptimo referido a la menor pérdida de potencia total del amplificador de evolvente es capaz de identificarse con la ayuda de modelo preciso de pérdidas que es una combinación de modelos comportamentales y analíticos de pérdidas. Además, se analiza el efecto en la respuesta del filtro de salida del convertidor reductor. Un filtro de dampeo paralelo extra es necesario para eliminar la oscilación resonante del filtro de salida porque el convertidor reductor opera en lazo abierto. La segunda arquitectura es un amplificador de evolvente de seguimiento de tensión multinivel. Al contrario que los convertidores que usan multi-fuentes, un convertidor reductor multifase se emplea para generar la tensión multinivel. En régimen permanente, el convertidor reductor opera en puntos del ciclo de trabajo con cancelación completa del rizado. El número de niveles de tensión es igual al número de fases de acuerdo a las características del entrelazamiento del convertidor reductor. En la transición, un control de tiempo mínimo (MTC) para convertidores multifase es novedosamente propuesto y desarrollado para cambiar la tensión de salida del convertidor reductor entre diferentes niveles. A diferencia de controles convencionales de tiempo mínimo para convertidores multifase con inductancia equivalente, el propuesto MTC considera el rizado de corriente por cada fase basado en un desfase fijo que resulta en diferentes esquemas de control entre las fases. La ventaja de este control es que todas las corrientes vuelven a su fase en régimen permanente después de la transición para que la siguiente transición pueda empezar muy pronto, lo que es muy favorable para la aplicación de seguimiento de tensión multinivel. Además, el control es independiente de la carga y no es afectado por corrientes de fase desbalanceadas. Al igual que en la primera arquitectura, hay una etapa lineal con la misma función, conectada en serie con el convertidor reductor multifase. Dado que tanto el régimen permanente como el estado de transición del convertidor no están fuertemente relacionados con la frecuencia de conmutación, la frecuencia de conmutación puede ser reducida para el alto ancho de banda de la evolvente, la cual es la principal consideración de esta arquitectura. La optimización de la segunda arquitectura para más alto anchos de banda de la evolvente es presentada incluyendo el diseño del filtro de salida, la frecuencia de conmutación y el número de fases. El área de diseño del filtro está restringido por la transición rápida y el mínimo pulso del hardware. La rápida transición necesita un filtro pequeño pero la limitación del pulso mínimo del hardware lleva el diseño en el sentido contrario. La frecuencia de conmutación del convertidor afecta principalmente a la limitación del mínimo pulso y a las pérdidas de potencia. Con una menor frecuencia de conmutación, el ancho de pulso en la transición es más pequeño. El número de fases relativo a la aplicación específica puede ser optimizado en términos de la eficiencia global. Otro aspecto de la optimización es mejorar la estrategia de control. La transición permite seguir algunas partes de la evolvente que son más rápidas de lo que el hardware puede soportar al precio de complejidad. El nuevo método de sincronización de la transición incrementa la frecuencia de la transición, permitiendo que la tensión multinivel esté más cerca de la evolvente. Ambas estrategias permiten que el convertidor pueda seguir una evolvente con un ancho de banda más alto que la limitación de la etapa de potencia. El modelo de pérdidas del amplificador de evolvente se ha detallado y validado mediante medidas. El mecanismo de pérdidas de potencia del convertidor reductor tiene que incluir las transiciones en tiempo real, lo cual es diferente del clásico modelos de pérdidas de un convertidor reductor síncrono. Este modelo estima la eficiencia del sistema y juega un papel muy importante en el proceso de optimización. Finalmente, la segunda arquitectura del amplificador de evolvente se integra con el amplificador de clase F. La medida del sistema EER prueba el ahorro de energía con el amplificador de evolvente propuesto sin perjudicar la linealidad del sistema. ABSTRACT The requirement of delivering high data rates in modern wireless communication systems results in complex modulated RF signals with wide bandwidth and high peak-to-average ratio (PAPR). In order to guarantee the linearity performance, the conventional linear power amplifiers typically work at 4 to 10 dB back-off from the maximum output power, leading to low system efficiency. The envelope elimination and restoration (EER) and envelope tracking (ET) are two promising techniques to overcome the efficiency problem. In both EER and ET, it is challenging to design efficient envelope amplifier for wide bandwidth and high PAPR RF signals. An usual approach for envelope amplifier includes a high-efficiency switching power converter operating at a frequency higher than the RF signal's bandwidth. In this case, the power loss of converter caused by high switching operation becomes unbearable for system efficiency when signal bandwidth is very wide. The solution of this problem is the focus of this dissertation that presents two architectures of envelope amplifier: a hybrid series converter with slow-envelope technique and a multilevel converter based on a multiphase buck converter with the minimum time control. In the first architecture, a hybrid topology is composed of a switched buck converter and a linear regulator in series that work together to adjust the output voltage to track the envelope with accuracy. A slow envelope generation algorithm yields a waveform with limited slew rate that is lower than the maximum slew rate of the original envelope. The buck converter's output follows this waveform instead of the original envelope using lower switching frequency, because the waveform has not only reduced slew rate but also reduced bandwidth. In this way, the linear regulator used to filter the waveform has additional power loss. Depending on how much reduction of the slew rate of envelope in order to obtain that waveform, there is a trade-off between the power loss of buck converter related to the switching frequency and the power loss of linear regulator. The optimal point referring to the lowest total power loss of this envelope amplifier is identified with the help of a precise power loss model that is a combination of behavioral and analytic loss model. In addition, the output filter's effect on the response is analyzed. An extra parallel damping filter is needed to eliminate the resonant oscillation of output filter L and C, because the buck converter operates in open loop. The second architecture is a multilevel voltage tracking envelope amplifier. Unlike the converters using multi-sources, a multiphase buck converter is employed to generate the multilevel voltage. In the steady state, the buck converter operates at complete ripple cancellation points of duty cycle. The number of the voltage levels is equal to the number of phases according the characteristics of interleaved buck converter. In the transition, a minimum time control (MTC) for multiphase converter is originally proposed and developed for changing the output voltage of buck converter between different levels. As opposed to conventional minimum time control for multiphase converter with equivalent inductance, the proposed MTC considers the current ripple of each phase based on the fixed phase shift resulting in different control schemes among the phases. The advantage of this control is that all the phase current return to the steady state after the transition so that the next transition can be triggered very soon, which is very favorable for the application of multilevel voltage tracking. Besides, the control is independent on the load condition and not affected by the unbalance of phase current. Like the first architecture, there is also a linear stage with the same function, connected in series with the multiphase buck converter. Since both steady state and transition state of the converter are not strongly related to the switching frequency, it can be reduced for wide bandwidth envelope which is the main consideration of this architecture. The optimization of the second architecture for wider bandwidth envelope is presented including the output filter design, switching frequency and the number of phases. The filter design area is restrained by fast transition and the minimum pulse of hardware. The fast transition needs small filter but the minimum pulse of hardware limitation pushes the filter in opposite way. The converter switching frequency mainly affects the minimum pulse limitation and the power loss. With lower switching frequency, the pulse width in the transition is smaller. The number of phases related to specific application can be optimized in terms of overall efficiency. Another aspect of optimization is improving control strategy. Transition shift allows tracking some parts of envelope that are faster than the hardware can support at the price of complexity. The new transition synchronization method increases the frequency of transition, allowing the multilevel voltage to be closer to the envelope. Both control strategies push the converter to track wider bandwidth envelope than the limitation of power stage. The power loss model of envelope amplifier is detailed and validated by measurements. The power loss mechanism of buck converter has to include the transitions in real time operation, which is different from classical power loss model of synchronous buck converter. This model estimates the system efficiency and play a very important role in optimization process. Finally, the second envelope amplifier architecture is integrated with a Class F amplifier. EER system measurement proves the power saving with the proposed envelope amplifier without disrupting the linearity performance.