Change in degree of coherence of partially coherent electromagnetic beams propagating through atmospheric turbulence

We study the change in the degree of coherence of partially coherent electromagnetic beam (so called electromagnetic Gaussian Schell-model beam). It is shown analytically that with a fixed set of source parameters and under a particular atmospheric turbulence model, an electromagnetic Gaussian Schell-model beam propagating through atmospheric turbulence reaches its maximum value of coherence after the beam propagates a particular distance, and the effective width of the spectral degree of coherence also has its maximum value. This phenomenon is independent of the used turbulence model. The results are illustrated by numerical curves. (c) 2006 Elsevier B.V. All rights reserved.

Measuring temporal fluctuation on femtosecond scale in a random medium

We report an observation of femtosecond optical fluctuations of transmitted light when a coherent femtosecond pulse propagates through a random medium. They are a result of random interference among scattered waves coming from different trajectories in the time domain. Temporal fluctuations are measured by using cross-correlated frequency optical gating. It is shown that a femtosecond pulse will be broadened and distorted in pulse shape while it is propagating in random medium. The real and imaginary components of transmitted electric field are also distorted severely. The average of the fluctuated transmission pulses yields a smooth profile, probability functions show good agreement with Gaussian distribution. (c) 2007 Elsevier B.V. All rights reserved.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

Classical and Quantum Effects in Plasmonic Metals

The field of plasmonics exploits the unique optical properties of metallic nanostructures to concentrate and manipulate light at subwavelength length scales. Metallic nanostructures get their unique properties from their ability to support surface plasmons– coherent wave-like oscillations of the free electrons at the interface between a conductive and dielectric medium. Recent advancements in the ability to fabricate metallic nanostructures with subwavelength length scales have created new possibilities in technology and research in a broad range of applications.

In the first part of this thesis, we present two investigations of the relationship between the charge state and optical state of plasmonic metal nanoparticles. Using experimental bias-dependent extinction measurements, we derive a potential- dependent dielectric function for Au nanoparticles that accounts for changes in the physical properties due to an applied bias that contribute to the optical extinction. We also present theory and experiment for the reverse effect– the manipulation of the carrier density of Au nanoparticles via controlled optical excitation. This plasmoelectric effect takes advantage of the strong resonant properties of plasmonic materials and the relationship between charge state and optical properties to eluci- date a new avenue for conversion of optical power to electrical potential.

The second topic of this thesis is the non-radiative decay of plasmons to a hot-carrier distribution, and the distribution’s subsequent relaxation. We present first-principles calculations that capture all of the significant microscopic mechanisms underlying surface plasmon decay and predict the initial excited carrier distributions so generated. We also preform ab initio calculations of the electron-temperature dependent heat capacities and electron-phonon coupling coefficients of plasmonic metals. We extend these first-principle methods to calculate the electron-temperature dependent dielectric response of hot electrons in plasmonic metals, including direct interband and phonon-assisted intraband transitions. Finally, we combine these first-principles calculations of carrier dynamics and optical response to produce a complete theoretical description of ultrafast pump-probe measurements, free of any fitting parameters that are typical in previous analyses.

Intensity-moments characterization of general pulsed paraxial beams with the Wigner distribution function

On the basis of the space-time Wigner distribution function (STWDF), we use the matrix formalism to study the propagation laws for the intensity moments of quasi-monochromatic and polychromatic pulsed paraxial beams. The advantages of this approach are reviewed. Also, a least-squares fitting method for interpreting the physical meaning of the effective curvature matrix is described by means of the STWDF. Then the concept is extended to the higher-order situation, and what me believe is a novel technique for characterizing the beam phase is presented. (C) 1999 Optical Society of America [S0740-3232(99)001009-1].

Prism coupling of ultrashort light pulses into waveguides

We discuss coupling of ultrashort light pulses into waveguides by use of a prism waveguide coupler configuration. Theoretical analysis indicates that an extra loss induced by the short coherence times of ultrashort pulses, which has a strong effect on the reflected light and the optimum coupling condition, appears in the waveguide. Numerical simulations show that the reflectance strongly depends on the coherence times of ultrashort pulses. A method for realizing optimum coupling by compensating for the extra loss is proposed as well in this paper. A preliminary experiment of employing ultrashort pulses with different coherence times was carried out, and good agreement between theory and experiment was obtained. (c) 2006 Optical Society of America.

Optimisation of the first principle code Octopus for massive parallel architectures: application to light harvesting complexes

150 p.

基于高频微波技术的分布式光纤传感器布里渊散射信号检测

分析了布里渊分布式光纤传感技术原理,采用自行研制的光纤单纵模分布反馈(DFB)激光器结合电光调制技术,利用相干检测技术,对布里渊微弱后向散射信号进行检测。通过改进滤波放大技术,对微弱后向散射光信号进行有效放大,再用扰偏技术及信号采样平均处理,实现对光纤传感器后向布里渊散射信号在11 GHz高频段直接采集显示。结果表明,探测所得布里渊散射信号峰值功率可达50 mV,能有效降低解调系统信号检测难度,改善了系统信噪比(SNR)。初步实验结果证明了该方案的可行性。

Shedding light on TQM: some research findings

Over the last decad , the paradigm of Total Quality Management (TQM) has been successfully forged in our business world. TQM may be defined as something that is both complex and ambiguous; nevertheless, some key elements or principles can be mentioned which are common to all of them: customer satisfaction, continuous improvement, commitment and leadership on the part of top management, involvement and support on the part of employees, teamwork, measurement via indicators and feedback. There are, in short, two main reasons for it having spread so widely: on the one hand, the successful diffusion of ISO 9000 standards for the implementation and certification of quality management systems, standards that have been associated to the TQM paradigm, and, on the other, the also successful diffusion of self evaluation models such as the EFQM promoted by the European Foundation for Quality Management and the Malcolm Baldrige National Quality Award in the USA, promoted by the Foundation for the Malcolm Baldrige National Quality Award. However, the quality movement is not without its problems as far as its mid and long term development is concerned. In this book some research findings related to these issues are presented.