Isotopic composition of rocks from the Lau/Tonga back-arc basin, data of DSDP Leg 21 and ODP Legs 91 an 135

New trace element, Sr-, Nd-, Pb- and Hf isotope data provide insights into the evolution of the Tonga-Lau Basin subduction system. The involvement of two separate mantle domains, namely Pacific MORB mantle in the pre-rift and early stages of back-arc basin formation, and Indian MORB mantle in the later stages, is confirmed by these results. Contrary to models proposed in recent studies on the basis of Pb isotope and other compositional data, this change in mantle wedge character best explains the shift in the isotopic composition, particularly 143Nd/144Nd ratios, of modern Tofua Arc magmas relative to all other arc products from this region. Nevertheless, significant changes in the slab-derived flux during the evolution of the arc system are also required to explain second order variations in magma chemistry. In this region, the slab-derived flux is dominated by fluid; however, these fluids carry Pb with sediment-influenced isotopic signatures, indicating that their source is not restricted to the subducting altered mafic oceanic crust. This has been the case from the earliest magmatic activity in the arc (Eocene) until the present time, with the exception of two periods of magmatic activity recorded in samples from the Lau Islands. Both the Lau Volcanic Group, and Korobasaga Volcanic Group lavas preserve trace element and isotope evidence for a contribution from subducted sediment that was not transported as a fluid, but possibly in the form of a melt. This component shares similarities with that influencing the chemistry of the northern Tofua Arc magmas, suggesting some caution may be required in the adoption of constraints for the latter dependent upon the involvement of sediments from the Louisville Ridge. A key outcome of this study is to demonstrate that the models proposed to explain subduction zone magmatism cannot afford to ignore the small but important contributions made by the mantle wedge to the incompatible trace element inventory of arc magmas.

Low-injection behaviour of a solar cell with a metallic grating back-reflector

Recent studies have dealt with the possibility of increasing light absorption by using the so-called electric field enhancement taking place within the grooves of metallic gratings. In order to evaluate the potential improvements derived from the absorption increase, we employ a simplified model to analyze the low-injection behaviour of a solar cell with a metallic grating back-reflector.

Tracking and back-tracking

This paper presents a review of back-tracking geometry not only for single axis but also for two-axis tracking and analyses the corresponding energy gains. It compares the different back-tracking strategies with the ideal tracking in terms of energy yield concluding, on the one hand, that back-tracking is more useful for single horizontal axis than for the single vertical one, and on the other hand, that back-tracking is more efficient when applied in the primary axis of a two-axis tracker

Monitoring maximum peak power density values as a more reliable marker for measurement procedures to elucidate RF EMF health effects: Leganes project

Considering the measurement procedures recommended by the ICNIRP, this communication is a proposal for a measurement procedure based in the maximum peak values of equivalent plane wave power density. This procedure has been included in a project being developed in Leganés, Spain. The project plans to deploy a real time monitoring system for RF to provide the city with a useful tool to adapt the environmental EM conditions to the new regulations approved. A first stage consisting of 105 measurement points has been finished and all the values are under the threshold of the regulation.

Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts

One of the key steps to achieve high efficiencies in amorphous/crystalline silicon photovoltaic structures is to design low-ohmic-resistance backcontacts with good passivation in the rear part of the cell. A well known approach to achieve this goal is to use laser-fired contact (LFC) processes in which a metal layer is fired through the dielectric to define good contacts with the semiconductor. However, and despite the fact that this approach has demonstrated to be extremely successful, there is still enough room for process improvement with an appropriate optimization. In this paper, a study focused on the optimal adjustment of the irradiation parameters to produce laser-fired contacts in a-Si:H/c-Si heterojunctionsolarcells is presented. We used samples consisting of crystalline-silicon (c-Si) wafers together with a passivation layer of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) deposited by plasma-enhanced chemical deposition (PECVD). Then, an aluminum layer was evaporated on both sides, the thickness of this layer varied from 0.2 to 1 μm in order to identify the optimal amount of Al required to create an appropriate contact. A q-switched Nd:YVO4laser source, λ = 532 nm, was used to locally fire the aluminum through the thin a-Si:H(i)-layers to form the LFC. The effects of laser fluences were analyzed using a comprehensive morphological and electrical characterization.

Back contacted emitter GaAs solar cells

A new device structure to improve the performance of concentrator GaAs solar cells is described and the first experimental results are reported. The reason for such an improvement relies on a drastic reduction of the shadowing and series resistance losses based on the possibility of back contacting the emitter region of the solar cell. The experimental results obtained with devices of these types, with a simplified structure, fabricated by liquid phase epitaxy, demonstrate the feasibility and correct operation of the proposed back contact of the emitter of the cells.

Study of the effect of different hole sizes on mechanical strength of wafers for back contact solar cells

Drilling process on wafers to produce EWT or MWT solar cells is a critical fabrication step, which affects on their mechanical stability. The amount of damage introduced during drilling process depends on the density of holes, their size and the chemical process applied afterwards. To quantify the relation between size of the holes and reduction of mechanical strength, several sets of wafers have been prepared, with different hole diameter. The mechanical strength of these sets has been measured by the ring on ring bending test, and the stress state in the moment of failure has been deduced by FE simulation.

Damage reduction of the laser drilling process on back contact solar cells by chemical treatment

Production of back contact solar cells requires holes generations on the wafers to keep both positive and negative contacts on the back side of the cell. This drilling process weakens the wafer mechanically due to the presence of the holes and the damage introduced during the process as microcracks. In this study, several chemical processes have been applied to drilled wafers in order to eliminate or reduce the damage generated during this fabrication step. The treatments analyzed are the followings: alkaline etching during 1, 3 and 5 minutes, acid etching for 2 and 4 minutes and texturisation. To determine mechanical strength of the samples a common mechanical study has been carried out testing the samples by the Ring on Ring bending test and obtaining the stress state in the moment of failure by FE simulation. Finally the results obtained for each treatment were fitted to a three parameter Weibull distribution

Large-scale testing of proficiency in English: Back to multiple choice?

The paper analyses whether that a properly designed multiple choice test can discriminate with a high level of accuracy if a student in our context has reached a B2 level according to the CEFRL.

Two-wavelength switching with a distributed-feed back semiconductor optical amplifier (DFBSOA)

Switching of a signal beam by another control beam at different wavelength is demonstrated experimentally using the optical bistability occurring in a 1.55 mm-distributed feedback semiconductor optical amplifier (DFBSOA) working in reflection. Counterclockwise (S-shaped) and reverse (clockwise) bistability are observed in the output of the control and the signal beam respectively, as the power of the input control signal is increased. With this technique an optical signal can be set in either of the optical input wavelengths by appropriate choice of the powers of the input signals. The switching properties of the DFBSOA are studied experimentally as the applied bias current is increased from below to above threshold and for different levels of optical power in the signal beam and different wavelength detunings between both input signals. Higher on-off extinction ratios, wider bistable loops and lower input power requirements for switching are obtained when the DFBSOA is operated slightly above its threshold value.

Route-back delivery protocol for collection tree protocol-based applications

We propose the Route-back Delivery (RBD) protocol; a routing mechanism to create reverse routes exploiting the Collection Tree Protocol to allow unicast data dissemination from the sink. The main goal of this work is to provide a mechanism to enable bi-directional communications among the root(s) and specific sensor nodes in data gathering applications that does not use broadcast only mechanisms. The main objective of the root-to-remote-nodes route creation is to disseminate short messages to change application parameters in a unicast fashion. This facilitates remote configurability in heterogeneous WSN deployments.