Population genetic structure of the Yangtze finless porpoise (Neophocaena phocaenoides asiaeorientalis): Implications for management and conservation

Understanding the population genetic structure is a prerequisite for conservation of a species. The degree of genetic variability characteristic of the mitochondrial DNA control region has been widely exploited in studies of population genetic structure and can be useful in identifying meaningful population subdivisions. To estimate the genetic profile of the Yangtze finless porpoise (Neophocaena phocaenoides asiaeorientalis), an endangered freshwater population endemic to China, the complete mtDNA control region was examined in 39 individuals belonging to seven different stocks inhabiting the middle and lower reaches of the Yangtze River. Very low genetic diversity was found (nucleotide diversity 0.0011 +/- 0.0002 and haplotypic diversity 0.65 +/- 0.05). The mtDNA genetic pattern of the Yangtze population appears to indicate a founder event in its evolutionary history and to support the marine origin for this population. Analyses by F-st and Phi(st) yielded statistically significant population genetic structure (F-st = 0.44, P < 0.05; phi(st) = 0.36, P < 0.05). These results may have significant implications for the management and conservation of the Yangtze finless porpoise in the future.

Observations on behavior and ecology of the Yangtze finless porpoise (Neophocaena phocaenoides asiaeorientalis) group at Tian-e-Zhou Oxbow of the Yangtze River

The authors made 39 surveys (a total of 161 days) in the Tian-e-Zhou Oxbow of the Yangtze River, China, for observing 13 Yangtze finless porpoises (Neophocaena phocaenoides asiaeorientalis) captured from the main stream of the Yangtze River and 7 juveniles born in the oxbow from January 1997 to July 2000. The animals were usually divided into several "core" groups and moved around in shallow, muddy-bottom areas with the largest individual in the lead. Each core group was composed of 2-3 animals (either 2 adults, 1 adult and 1 juvenile, 2 adults and 1 juvenile, or 2 adults and 1 calf). Newly-released animals joined the other animals first, and then reorganized their own groups one or two days later. Average breath interval was 34.4 s (+/- s.d. 4.39) for individuals in the group. The animals mated from May through June and gave birth during the second and last ten days of April of the next year. The gestation period was estimated as 310 - 320 days. Calves over 5 months old began to eat small fish. The distance of calves swimming apart from their suspected mothers increased each month. These findings will help in the management of the reserve to protect this unique freshwater porpoise.

Genome segment S8 of grass carp hemorrhage virus encodes a virion protein

The complete nucleotide sequence of the genome segment S8 of grass carp hemorrhage virus (GCHV) was determined from cDNA corresponding to the viral genomic RNA. It is 1,287 nucleotides in length and contains a large open reading frame that could encode a protein of 409 amino acids with a predicted molecular mass of 44 kD. The S8 was expressed using the pET fusion protein vector and detected by Western blotting analysis using the chicken egg IgY against intact GCHV particles, indicating that S8 encodes a virion protein. Amino acid sequence comparisons revealed that the protein encoded by S8 is closely related to protein alpha2 of mammalian reovirus, suggesting that the deduced protein of S8 is an inner capsid protein. Copyright (C) 2001 S. Karger AG, Basel.

A detection method for grass carp hemorrhagic virus (GCHV) based on a reverse transcription polymerase chain reaction

A rapid, sensitive and highly specific detection method for grass carp hemorrhagic virus (GCHV) based on a reverse transcription-polymerase chain reaction (RT-PCR) has been developed. Two pairs of PCR primers were synthesized according to the cloned cDNA sequences of the GCHV-861 strain. For each primer combination, only one specific major product was obtained when amplification was performed by using the genomic dsRNA of GCHV-861 strain. The lengths of their expected products were 320 and 223 bp, respectively. No products were obtained when nucleic acids other than GCHV-861 genomic RNA were used as RT-PCR templates. To assess the sensitivity of the method, dilutions of purified GCHV-861 dsRNA total genome (0.01 pg up to 1000 pg) were amplified and quantities of as little as 0.1 pg of purified dsRNA were detectable when the amplification product was analyzed by 1.5% agarose gel electrophoresis. This technique could detect GCHV-861 not only in infected cell culture fluids, but also in infected grass carp Ctenopharyngodon idellus and rare minnow Gobiocypris rarus with or without hemorrhagic symptoms. The results show that the RT-PCR amplification method is useful for the direct detection of GCHV.

Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.

Development of solar-blind AlGaN 128x128 ultraviolet focal plane arrays

This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128x128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA architecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128x128 p-i-n photodiode arrays with cuton and cutoff wavelengths of 233 and 258 nm, with a sharp reduction in response to UVB (280-320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.

Deep level defects in high temperature annealed InP

Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide ambient, while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

Stability of GaAs photocathodes under different intensities of illumination

The photocurrent curves of reflection-mode GaAs photocathodes as a function of time, when were illuminated by white light with an intensity of 0, 33 and 100 Ix, respectively, were measured using a multi-information measurement system. The calculated lifetimes of cathodes are 320, 160 and 75 min, respectively, showing that the stability of cathodes degraded with the increase of light intensity. The lifetime of cathode, illuminated by white light with an intensity of 100 Ix, while no photocurrent was being drawn during the illumination, was 100 min. Through comparison, we found that the influence of illumination on cathodes stability is greater than that of photocurrent. The quantum-yield curves of cathodes as a functions of time, when illuminated by white light with an intensity of 33 Ix, were measured also. The measured results show that the shape of the yield curves changes with increasing illumination time due to the faster quantum-yield degradation rate of low energy photons. Based on the revised quantum-efficiency equations for the reflection-mode cathodes, the variation of yield curves are analyzed to be due to the intervalley diffusion of photoelectrons and the evolution of the surface potential barrier profile of the photocathodes during degradation process.

Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix oil InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature tip to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 mu m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the mnge of 220-320 K.

Metal-semiconductor-metal ultraviolet photodetector based on GaN

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with lambda = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and is 15.3 nA under 10 V bias. A maximum responsivity of 0.166 A/W has been achieved under the illumination with lambda = 366 nm light and 15 V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. Its responsivity under the illumination with lambda = 360 nm light increases when the bias voltage increases.

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

Hard magnetic properties of Sm3Fe26.7VxN4 and Sm3Fe26.7VxCy

Sm3Fe26.7V2.3N4 nitrides and Sm3Fe26.7V2.3Cy carbides have been synthesized by gas-solid phase reaction. Their hard magnetic properties have been investigated by means of additional ball-milling at room temperature. The saturation magnetization of Sm3Fe26.7V2.3N4 almost decreases linearly with increasing ball-milling time t, but that of Sm3Fe26.7V2.3Cy has no obvious change when the ball-milling time increases from t = 1 to 28 h. As a preliminary result, the maximum remanence B-r of 0.94 and 0.88 T, the coercivity mu(0i)H(C) of 0.75 and 0.25 T, and the maximum energy product (BH) of 108.5 and 39.1 kJ/m(3) for their resin-bonded permanent magnets are achieved, respectively, by ball-milling at 293 K. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

一种基于协商的软件过程协同方法

大型软件系统的开发大多要求多人协同完成·软件过程协同的一个重要特点是协同的参与者都试图通过实施协同任务来取得最大化的获利,因而协同的决策和实施不是强制性的,而是由软件开发人员或软件组织经过协商来进行的·传统的软件过程建模方法中对软件过程协同的描述是刚性的,即在满足进入条件或者被显式调用时,协同就一定会被触发,并按照一个规定好的规则或方针来实施,这样的方法难以适应软件过程协同中所表现的协商特性·提出了一个基于协商的软件过程协同方法,将软件过程描述为一组相对独立的、自治的、理性的、协作的软件过程Agent,过程Agent之间的协同关系由过程Agent通过协商确定,相比传统的方法,具有能够更好地适应软件过程协同的特点·