994 resultados para 191-1179B
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[ES]En este Trabajo de Fin de Grado se ha realizado una campaña de medidas basada en el cálculo de las pérdidas de propagación en interiores, para la frecuencia de 2 GHz, usada en sistemas móviles. Se han estudiado enlaces de 1 a 80 metros, realizando medidas a lo largo de la planta 4 del edificio B de la Escuela desde diferentes puntos. También se realiza un modelo de propagación completando el trabajo con la medida de las pérdidas de inserción introducidas por materiales y elementos usados en el interior de la Universidad. Para observar adecuadamente el trabajo se realiza una representación gráfica de los resultados obtenidos. Por último utilizando un software se modela el entorno físico de la planta y se comparan los resultados teóricos obtenidos con el caso práctico realizado.
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Coordinador de las actas: Maurilio Pérez González
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Photoluminescence spectrum of Ce:YAG single crystal was studied employing vacuum ultraviolet (VUV) synchrotron radiation. Intrinsic absorption edge at about 52,000 cm(-1) was observed in the absorption spectrum. From the VUV excitation spectrum, the energy of the highest d-component of 53,191 cm(-1) (188 nm) for the Ce3+ ions in YAG was obtained at 300 K. The disappearance of the third 5d level at 37,735 cm(-1) (265 nm) in absorption and excitation spectra in our samples may be due to the impurity Fe3+ ions absorption. (C) 2006 Elsevier Ltd. All rights reserved.
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The Yb (10%):GGG and Yb (30%): GGG crystals have been grown by the Czochralski method. The chemical compositions are: Yb1.07Gd1.74Ga5.19O12 and Yb0.33Gd1.47Ga5.2O12. The absorption and emission spectra of Yb:GGG crystal at room temperature have been measured. The spectroscopic parameters of Yb:GGG and Yb:YAG have been compared. Optical absorption spectra of Yb:GGG show 4f-4f transitions related to Gd3+ ion around 300 nm, and also an onset of charge transfer (CT) transitions from oxygen ligands to Gd3+ or Yb3+ cations below 240nm. The CT absorption of Yb3+ is largely overlapped by that of Gd3+ ions. (c) 2005 Elsevier B.V. All rights reserved.
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g-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec and etch pits density of (0.3-2.2) x 10(4) cm(-2) throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5 mu m and becomes completely absorbing around 6.7 mu m wavelength. The optical absorption edge in near UV region is about 191 nm.
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191 p.
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利用Nd:YAG调Q单脉冲激光和自由脉冲激光对硬膜窄带干涉滤光片进行激光损伤阈值的测试,并且采用表面热透镜技术测量了滤光片的吸收率。实验发现:窄带干涉滤光片的吸收率和激光损伤阈值强烈依赖于辐照激光波长与窄带干涉滤光片通带的相对位置;在调Q单脉冲激光作用下,不同中心波长的滤光片损伤形貌存在明显的差别,而在自由脉冲激光作用下,各滤光片的损伤形貌则趋于相同.均表现为典型的热熔烧蚀破坏。根据实验结果,结合损伤形貌,通过驻波场理论对激光作用下滤光片内电场分布的分析与模拟.探讨了两种激光模式作用下滤光片的损伤特征和损
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Trabajo desarrollado dentro del proyecto Monumenta Linguae Vasconum III (FFI2008-04516) del MICIN y del GIC: IT-486-10 del GV.