The deposition of small particles from a turbulent air flow in a curved duct

The paper describes an experimental and theoretical study of the deposition of small spherical particles from a turbulent air flow in a curved duct. The objective was to investigate the interaction between the streamline curvature of the primary flow and the turbulent deposition mechanisms of diffusion and turbophoresis. The experiments were conducted with particles of uranine (used as a fluorescent tracer) produced by an aerosol generator. The particles were entrained in an air flow which passed vertically downwards through a long straight channel of rectangular cross-section leading to a 90° bend. The inside surfaces of the channel and bend were covered with tape to collect the deposited particles. Following a test run the tape was removed in sections, the uranine was dissolved in sodium hydroxide solution and the deposition rates established by measuring the uranine concentration with a luminescence spectrometer. The experimental results were compared with calculations of particle deposition in a curved duct using a computer program that solved the ensemble-averaged particle mass and momentum conservation equations. A particle density-weighted averaging procedure was used and the equations were expressed in terms of the particle convective, rather than total, velocity. This approach provided a simpler formulation of the particle turbulence correlations generated by the averaging process. The computer program was used to investigate the distance required to achieve a fully-developed particle flow in the straight entry channel as well as the variation of the deposition rate around the bend. The simulations showed good agreement with the experimental results. © 2012 Elsevier Ltd.

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

We report on a large improvement in the wetting of Al 2O 3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al 2O 3/graphene stack is then transferred to SiO 2 by standard methods. © 2012 American Institute of Physics.

Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates

Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics. © 2012 IEEE.

In-situ deposition of sparse vertically aligned carbon nanofibres on catalytically activated stainless steel mesh for field emission applications

We report on an inexpensive, facile and industry viable carbon nanofibre catalyst activation process achieved by exposing stainless steel mesh to an electrolyzed metal etchant. The surface evolution of the catalyst islands combines low-rate electroplating and substrate dissolution. The plasma enhanced chemical vapour deposited carbon nanofibres had aspect-ratios > 150 and demonstrated excellent height and crystallographic uniformity with localised coverage. The nanofibres were well-aligned with spacing consistent with the field emission nearest neighbour electrostatic shielding criteria, without the need of any post-growth processing. Nanofibre inclusion significantly reduced the emission threshold field from 4.5 V/μm (native mesh) to 2.5 V/μm and increased the field enhancement factor to approximately 7000. © 2011 Elsevier B.V. All rights reserved.

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 °C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metal-catalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp 2-C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production. © 2012 American Institute of Physics.

Deposition of carbon nanotubes on CMOS

We demonstrate the growth of multi wall and single wall carbon nanotubes (CNT) onto substrates containing commercial 1-m CMOS integrated circuits. The low substrate temperature growth (450°C) was achieved by using hot filament (1000 °C) to preheat the source gases (C 2H 2 and NH 3) and in situ mass spe-ctroscopy was used to identify the gas species present. Field effect transistors based on Single Walled Carbon Nanotube (SWNT) grown under such conditions were fabricated and examined. CNT growth was performed directly on the passivation layer of the CMOS integrated circuits. Individual n- and p-type CMOS transistors were compared before and after CNT growth. The transistors survive and operate after the CNT growth process, although small degradations are observed in the output current (for p-transistors) and leakage current (for both p- and n-type transistors). © 2010 IEEE.

Low partial pressure chemical vapor deposition of graphene on copper

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp 2 hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13 of electric-field effect. The Hall mobility is ∼40 cm 2/Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size ∼10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes. © 2012 American Institute of Physics.

Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt

Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes. © 1988-2012 IEEE.

Dye-sensitized solar cells based on a single layer deposition of TiO 2 from a new formulation paste and their photovoltaic performance

A new strategy for enhancing the efficiency and reducing the production cost of TiO 2 solar cells by design of a new formulated TiO 2 paste with tailored crystal structure and morphology is reported. The conventional three- or four-fold layer deposition process was eliminated and replaced by a single layer deposition of TiO 2 compound. Different TiO 2 pastes with various crystal structures, morphologies and crystallite sizes were prepared by an aqueous particulate sol-gel process. Based on simultaneous differential thermal (SDT) analysis the minimum annealing temperature to obtain organic-free TiO 2 paste was determined at 400°C, being one of the lowest crystallization temperatures of TiO 2 photoanode electrodes for solar cell application. Photovoltaic measurements showed that TiO 2 solar cell with pure anatase crystal structure had higher power conversion efficiency (PCE) than that made of pure rutile-TiO 2. However, the PCE of solar cells depends on the anatase to rutile weight ratio, reaching a maximum at a specific value due to the synergic effect between anatase and rutile TiO 2 nanoparticles. Moreover, it was found that the PCE of solar cells made of crystalline TiO 2 powders was much higher, increasing in the range 32-84% depending on anatase to rutile weight ratio, than that of prepared by amorphous powders. TiO 2 solar cell with the morphology of mixtures of nanoparticles and microparticles had higher PCE than the solar cell with the same phase composition containing TiO 2 nanoparticles due to the role of TiO 2 microparticles as light scattering particles. The presented strategy would open up new insight into fabrication and structural design of low-cost TiO 2 solar cells with high power conversion efficiency. © 2012 Elsevier Ltd.

The foundations of a new approach to additive manufacturing: Characteristics of free space metal deposition

In this paper, we report on the realisation of a free space deposition process (FSD). For the first time the use of a moving support structure to deposit tracks of metal starting from a substrate and extending into free space is characterised. The ability to write metal shapes in free space has wide ranging applications in additive manufacturing and rapid prototyping where the tracks can be layered to build overhanging features without the use of fixed support structures (such as is used in selective laser melting (SLM) and stereo lithography (SLA)). We demonstrate and perform a preliminary characterisation of the process in which a soldering iron was used to deposit lead free solder tracks. The factors affecting the stability of tracks and the effect of operating parameters, temperature, velocity, initial track starting diameter and starting volume were measured. A series of 10 tracks at each setting were compared with a control group of tracks; the track width, taper and variation between tracks were compared. Notable results in free space track deposition were that the initial track diameter and volume affected the repeatability and quality of tracks. The standard deviation of mean track width of tracks from the constrained initial diameter group were half that of the unconstrained group. The amount of material fed to the soldering iron before commencing deposition affected the taper of tracks. At an initial volume of 7 mm3 and an initial track diameter of 0.8 mm, none of the ten tracks deposited broke or showed taper > ∼1°. The maximum deposition velocity for free space track deposition using lead-free solder was limited to 1.5 mm s-1. © 2011 Elsevier B.V. All rights reserved.

The parameter space of graphene chemical vapor deposition on polycrystalline Cu

A systematic study of the parameter space of graphene chemical vapor deposition (CVD) on polycrystalline Cu foils is presented, aiming at a more fundamental process rationale in particular regarding the choice of carbon precursor and mitigation of Cu sublimation. CH 4 as precursor requires H 2 dilution and temperatures ≥1000 °C to keep the Cu surface reduced and yield a high-quality, complete monolayer graphene coverage. The H 2 atmosphere etches as-grown graphene; hence, maintaining a balanced CH 4/H 2 ratio is critical. Such balance is more easily achieved at low-pressure conditions, at which however Cu sublimation reaches deleterious levels. In contrast, C 6H 6 as precursor requires no reactive diluent and consistently gives similar graphene quality at 100-150 °C lower temperatures. The lower process temperature and more robust processing conditions allow the problem of Cu sublimation to be effectively addressed. Graphene formation is not inherently self-limited to a monolayer for any of the precursors. Rather, the higher the supplied carbon chemical potential, the higher the likelihood of film inhomogeneity and primary and secondary multilayer graphene nucleation. For the latter, domain boundaries of the inherently polycrystalline CVD graphene offer pathways for a continued carbon supply to the catalyst. Graphene formation is significantly affected by the Cu crystallography; i.e., the evolution of microstructure and texture of the catalyst template form an integral part of the CVD process. © 2012 American Chemical Society.