981 resultados para b-D-Galactopyranose
Resumo:
The mechanical activation is one of the most effective method for obtaining highly disperse system due to mechanical action stress fields form in solids during milling procedure. This effect results in changes of free energy, leading to release of heat, formation of a new surface, formation of different crystal lattice defects and initiation of solid-state chemical reaction. The accumulated deformation energy determines irreversible changes of crystal structure and consequently microstructure resulting in the change of their properties. Mechanochemical processing route has been developed recently for the production of intermetallic and alloy compounds. The intrinsic advantage of this process is that the solid-state reaction is activated due to mechanical energy instead of the temperature. It was shown that the chemical reactivity of starting materials could be improved significantly after mechanochemical activation and, subsequently, the calcination temperature was reduced. Besides, it was apparent that the mechanochemical treatment could enhance the reactivity of constituent oxides; however, the sintering process could not be avoided to develop the desired ceramics. A novel mechanochemical technique for synthesis of fine-grained perovskite structured powders has shown that it is possible to form perovskite at room temperature. The effect of milling on the formation of perovskite structure of barium titanate (BT), lead titanate (PT), PZT, PZN, magnesium niobate (PMN) and LM ceramic materials was analyzed. The dielectric properties of sintered ceramics are comparable with those prepared by other methods in the literature. (C) 2003 Elsevier B.V. B.V. All rights reserved.
Resumo:
Pb0.91Ca0.1TiO3 powders (PCT) were prepared by mechanochemical synthesis from high-energy ball milling process. The influence of milling time on the phase formation, crystal structure, specific surface area, density and powder morphology was observed. We adopted the Rietveld refinement technique to investigate the crystal structure of the PCT powders. Scanning electron microscopy (SEM) analysis revealed that PCT powders milled for 5 h showed a wide distribution of particle agglomerates while milled for 35 h showed a decrease in agglomerates size. Further prolongation of milling time resulted in the agglomerates growth. (C) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Resumo:
This study consisted of an investigation of the influence of powder preparation on the phase and chemical compositions and microstructure of 9.5/65/35 PLZT materials sintered in an oxygen atmosphere. The powders with the formula Pb0.905La0.095(Zr0.65Ti0.35)(0.976)O-3+3.5 wt.% PbO were prepared by the polymeric organometallic precursor method (the Pechini method and the partial oxalate procedure). Phase composition was determined by X-ray diffraction of powder and EDS analysis, while grain size was determined based on the micrograph obtained from SEM. (C) 2001 Elsevier B.V. B.V. All rights reserved.
Resumo:
The deposition of thick film pastes by screen-printing is a relatively simple and convenient method to produce thicker layers with thickness up to 100 mum. In the present work, the barium titanate thick films were prepared from mechanically activated powders based on BaC03 and TiO2. After mixing, the powders were calcined at low temperature by slow heating and cooling rates. The thick films were deposited on to Al2O3 substrates through hybrid technology. The obtained films were fired at 850 degreesC together with electrode material (silver/palladium). The electrical properties of thick films: dielectric permittivity, dielectric losses, Curie temperature, hysteresis loop were reported. The obtained BT thick films can be applied in as multilayer capacitors or in gas sensor application. (C) 2003 Elsevier Ltd. All rights reserved.
Resumo:
Dense SnO2 ceramics were obtained by doping with ZnO concentrations varies from 0.5 to 5.0 mel. The obtained powder was isostaticaly pressed to 210MPa in cylindrical shape and sintered from ambient to 1.500 degrees C using constant heating rate of 10 degrees C/min. Densities above 97% were obtained depending on the ZnO doping concentration. A maximum density was reached with the addition of 2 mol%. It can be concluded from shrinkage data and the observed microstructure obtained by SEM that the solid solution limit for ZnO in SnO2 is about 1.0 mol%. Above this concentration the formation of a second ceramic phase is observed.
Resumo:
Bismuth titanate, Bi(4)Ti(3)O(12) (BIT) nanosized powders have been successfully synthesized via high energy mechanochemical activation. The phase formation of BIT, crystal structure, microstructure, crystallite size and specific surface area were followed by XRD, scanning electron microscopy (SEM) and the BET specific surface area measurements. The BIT milled 2 h shows the orthorhombic crystalline structure with small amount of amorphous phase. The microstructure of Bi(4)Ti(3)O(12) ceramics sintered at 1000 degrees C for 12h exhibit plate-like grain structure.
Resumo:
BaTiO3 is usually doped to achieve the temperature stability required by device applications, as well as to obtain a large positive temperature coefficient anomaly of resistivity (PTCR). Uniform distribution of dopants among the submicron dielectric particles is the key for optimal control of grain size and microstructure to maintain a high reliability. The system Ba0.84Pb0.16TiO3 was synthesized from high purity BaCO3, TiO2, PbO oxide powders as raw materials. Sb2O3, MnSO4 and ZnO were used as dopants and Al2O3, TiO2 and SiO2 as grain growth controllers. Phase composition was analyzed by using XRD and the microstructure was investigated by SEM. EDS attached to SEM was used to analyze phase composition specially related to abnormal grain growth. Electrical resistivities were measured as a function of temperature and the PTCR effect characterized by an abrupt increase on resistivity.
Resumo:
It is known that the dielectric properties of BaTiO3 (BT) are strongly dependent on its grain size. Coarse-grained ceramics of pure BT showed lower dielectric constant at room temperature then fine grained. Many authors considered that when the grain size is lower than 700 nm, the lattice of BT changes from tetragonal to pseudocubic, and the dielectric constant value is very low. In the doped BT this effect is more complex, because it is necessary to consider also the influence of dopants. The grain size effect on the structure and dielectric properties of niobium-doped barium titanate was investigated. Niobium-doped barium titanate was prepared from powders obtained by doping of commercial barium titanate and from organometallic complex using citrates as precursors (Pechini procedure). The crystal and microstructure of sintered niobium-doped barium titanate were determined. Dielectric constant and dissipation factor were measured. The observation confirmed that the structure and properties are strongly dependent on grain size. (C) 2003 Elsevier B.V. B.V. All rights reserved.
Resumo:
The structural organization of Sb2O3-SbPO4 glasses has been studied by FTIR, Raman, P-31 MAS and spin echo NMR, Mossbauer and X-ray absorption spectroscopy (EXAFS and XANES at K and L-3,L-1-Sb edges). The combined results can be explained in terms of two potential mechanisms describing the change of the Sb(m) local environment upon incorporation of Q((4))-type phosphate. The formation of the latter species requires anionic compensation that may be adjusted by (a) formation of non bridging oxygen or (b) formation of SbO4E- groups (E = non-bonding electron pair). The second model is favored.
Resumo:
The gap between the bulk materials and thin films can be filled with thick films suitably designed and appropriate processed. Thick films of complex system like lead-lanthanum-zirconium titanate (PLZT) is difficult to produce by simple solid-state reaction keeping compositional homogeneity and optimal grain size distribution. In the present work, PLZT thick films were fabricated by screen-printing technique from nanosized powders obtained through soft chemistry by polymeric precursor method. Thick film paste was obtained by mixing PLZT fine powders and organic vehicle. The upper and bottom electrodes based on Ag-Pd and functional component based on PLZT were screen-printed on alumina substrate and after that annealed in air atmosphere. The powder morphology, microstructure, dielectric and ferroelectric properties of 9.5/65/35 PLZT thick films were analysed. (c) 2007 Elsevier Ltd. All rights reserved.
Resumo:
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration ranging from 0 to 0.75 were grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The scanning electron microscopy shows a change of morphology with increasing the lanthanum concentration. The BLT films show well-saturated polarization-electric field curves whit remnant polarizations of 14.7, 20.5, 21.5, and 20.4 muC/cm(2) for x = 0, 0.25, 0.50 and 0.75, respectively. The dielectric constant of BLT (x = 0.75 mol% La) is equal to 158 while dielectric loss remain low (tandelta = 0.0018).
Resumo:
The family of bismuth titanate, Bi(4)Ti(3)O(12) (BIT) layered-structured ferroelectrics materials is attractive from the viewpoint of such as their application as electronic materials dielectrics, piezoelectrics and pyroelectrics, because they are characterized by good stability of piezoelectric properties, a high Curie temperature and a good resistance vs temperature. Bismuth titanate (Bi(4)Ti(3)O(12)) powders can be prepared using different methods, depending if the creation will be film coating or ceramics. The structure and properties of bismuth titanate materials show a significance dependence on the applied synthesis method. In this review paper, we made an attempt to give an approach to analyszing the structure, synthesis methods and properties of bismuth titanate ferroelectrics materials.
Resumo:
Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.