Observation of phase transformations in cement during hydration

We report the phase transformations in Portland cement before and after hydration. The hydration mechanism was studied in detail by using a full Rietveld refinement of the X-ray diffraction (XRD) patterns, Fourier Transformed Infra-Red (FTIR) spectroscopy, Thermogravimetric Analysis (TGA) and Mossbauer spectroscopy at room temperature. From the Rietveld refinement of XRD data, alite, belite, celite, brown-millerite and low quartz phases were detected and quantified as major phases in dry cement powder. After hydration, calcium carbonate, portlandite and ettringite phases were found to form. A large reduction in the amounts of alite and belite phases were observed suggesting the formation of amorphous C-S-H phase and emphasizing the role of alite phase in flash setting of cement, as justified by the XRD and FTIR spectroscopy. Mossbauer spectra of all the unset samples showed quadrupole split doublets corresponding to the brownmillerite phase which remains unchanged even after about one week of hydration, suggesting that brownmillerite did not transform to other phases during initial stage of hydration process. (C) 2015 Elsevier Ltd. All rights reserved.

DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating

High-kappa TiO2 thin films have been fabricated from a facile, combined sol-gel spin - coating technique on p and n type silicon substrate. XRD and Raman studies headed the existence of anatase phase of TiO2 with a small grain size of 18 nm. The refractive index `n' quantified from ellipsometry is 2.41. AFM studies suggest a high quality, pore free films with a fairly small surface roughness of 6 angstrom. The presence of Ti in its tetravalent state is confirmed by XPS analysis. The defect parameters observed at the interface of Si/TiO2 were studied by capacitance - voltage (C - V) and deep level transient spectroscopy (DLTS). The flat - band voltage (V-FB) and the density of slow interface states estimated are -0.9, -0.44 V and 5.24x10(10), 1.03x10(11) cm(-2); for the NMOS and PMOS capacitors, respectively. The activation energies, interface state densities and capture cross -sections measured by DLTS are E-V + 0.30, E-C - 0.21 eV; 8.73x10(11), 6.41x10(11) eV(-1) cm(-2) and 5.8x10(-23), 8.11x10(-23) cm(2) for the NMOS and PMOS structures, respectively. A low value of interface state density in both P-and N-MOS structures makes it a suitable alternate dielectric layer for CMOS applications. And also very low value of capture cross section for both the carriers due to the amphoteric nature of defect indicates that the traps are not aggressive recombination centers and possibly can not contribute to the device operation to a large extent. (C) 2015 Author(s).

Volume change behavior of lime treated gypseous soil - influence of mineralogy and microstructure

Series of oedometer tests and micro-analytical studies (XRD, SEM and EDAX) have been carried out to investigate the influence of varying gypsum content on swell, compressibility and permeability of lime treated montmorillonitic soil after curing for different period. Immediate swell is observed on inundation of compacted samples with water and continuously increased with gypsum content. However, changes in swell are found to be marginal with curing. This is attributed to the formation and growth of ettringite crystals by ionic reactions of aluminum calcium-sulfate in the presence of water which is confirmed through detailed micro-analysis. The higher swell in uncured specimens and gradual reduction in swell with increase in curing periods are due to relative dominance of formation and growth of ettringite and cementitious compounds, respectively. Also, the ionic reaction products are found to bear a significant influence on the compressibility and permeability behavior. (C) 2015 Elsevier B.V. All rights reserved.

Solution processible Cu2SnS3 thin films for cost effective photovoltaics: Characterization

Thin films of Cu2SnS3 (CTS) were deposited by the facile solution processed sol-gel route followed by a low-temperature annealing. The Cu-Sn-thiourea complex formation was analysed using Fourier Transform Infrared spectrophotometer (FTIR). The various phase transformations and the deposition temperature range for the initial precursor solution was determined using Thermogravimetric analysis (TGA) and Differential Scanning Calorimetry (DSC). X-Ray Diffraction (XRD) studies revealed the tetragonal phase formation of the CTS annealed films. Raman spectroscopy studies further confirmed the tetragonal phase formation and the absence of any deterioratory secondary phases. The morphological investigations and compositional analysis of the films were determined using Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) respectively. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 1.3 nm. The absorption coefficient was found to be 10(4) cm(-1) and bandgap 1.3 eV which qualifies CTS to be a potential candidate for photovoltaic applications. The refractive index, extinction coefficient and relative permittivity of the film were measured by Spectroscopic ellipsometry. Hall effect measurements, indicated the p type nature of the films with a hole concentration of 2 x 10(18) cm(-3), electrical conductivity of 9 S/cm and a hole mobility of 29 cm(2)/V. The properties of CTS as deduced from the current study, present CTS as a potential absorber layer material for thin film solar cells. (C) 2015 Elsevier B.V. All rights reserved.

Magnetic properties of nanocrystalline Mn1-xZnxFe2O4

Nanocrystalline Mn1-xZnxFe2O4 (x = 0, 0.1, 0.3, 0.5, 0.7, 0.9, 1.0) were prepared via solution combustion method. Structural and morphology of Mn-Zn ferrites were characterized by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM). Magnetic properties were carried out using vibrating sample magnetometer (VSM) at room temperature (RT) up to maximum field of 1.5 T. The room temperature real and imaginary part of permeability(mu' and mu'') has been measured in the frequency range of 1MHz to 1GHz. The room temperature XRD patterns exhibits the spinel cubic (Fm-3m) structure and broad XRD patterns shows the presence of nanoparticles. The imaginary part of the permeability (mu'') gradually increased with the frequency and took a broad maximum at a certain frequency, where the real permeability (mu') rapidly decreases, which is known as natural resonance. The coercive filed values are low, hence probability of domain rotation is also lower and the magnetization decreased with zinc substitution. The values of mu' and mu'' increases sharply, attained a maximum and then decreases with zinc content.

Study on Low Temperature DC Electrical Conductivity of SnO2 Nanomaterial Synthesized by Simple Gel Combustion Method

Nanocrystalline tin oxide (SnO2) material of different particle size was synthesized using gel combustion method by varying oxidizer (HNO3) and keeping fuel as a constant. The prepared samples were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Analysis X-ray Spectroscope (EDAX). The effect of oxidizer in the gel combustion method was investigated by inspecting the particle size of nano SnO2 powder. The particle size was found to be increases with the increase of oxidizer from 8 to 12 moles. The X-ray diffraction patterns of the calcined product showed the formation of high purity tetragonal tin (IV) oxide with the particle size in the range of 17 to 31 nm which was calculated by Scherer's formula. The particles and temperature dependence of direct (DC) electrical conductivity of SnO2 nanomaterial was studied using Keithley source meter. The DC electrical conductivity of SnO2 nanomaterial increases with the temperature from 80 to 300K and decrease with the particle size at constant temperature.

Evaporation-Condensation Synthesis and Optical Property of In(2)O(3)Octahedrons

Synthesis of In2O3 octahedrons is carried out successfully by heating Indium metal pieces in air ambient. The sample is characterized by scanning electron microscopy (SEM), Energy dispersive X-ray spectroscope (EDS), X-ray diffraction (XRD) and Raman spectroscopy. The as-prepared In2O3 octahedrons are highly crystalline and exhibit body centered cubic structure. Room temperature and temperature (293-453K) dependence photoluminescence reveals a deep levelbroad emission of yellowish-orange spectra centered around 605 nm. The emission is due to the presence of defect levels in the band gap of materials.

On the Structural Stability of Melt Spun Ribbons of Fe95-x Zr (x) B4Cu1 (x=7 and 9) Alloys and Correlation with Their Magnetic Properties

Melt spun ribbons of Fe95-x Zr (x) B4Cu1 with x = 7 (Z7B4) and 9 (Z9B4) alloys have been prepared, and their structure and magnetic properties have been evaluated using XRD, DSC, TEM, VSM, and Mossbauer spectroscopy. The glass forming ability (GFA) of both alloys has been calculated theoretically using thermodynamical parameters, and Z9B4 alloy is found to possess higher GFA than that of Z7B4 alloy which is validated by XRD results. On annealing, the amorphous Z7B4 ribbon crystallizes into nanocrystalline alpha-Fe, whereas amorphous Z9B4 ribbon shows two-stage crystallization process, first partially to bcc solid solution which is then transformed to nanocrystalline alpha-Fe and Fe2Zr phases exhibiting bimodal distribution. A detailed phase analysis using Mossbauer spectroscopy through hyperfine field distribution of phases has been carried out to understand the crystallization behavior of Z7B4 and Z9B4 alloy ribbons. In order to understand the phase transformation behavior of Z7B4 and Z9B4 ribbons, molar Gibbs free energies of amorphous, alpha-Fe, and Fe2Zr phases have been evaluated. It is found that in case of Z7B4, alpha-Fe is always a stable phase, whereas Fe2Zr is stable at higher temperature for Z9B4. (C) The Minerals, Metals & Materials Society and ASM International 2015

YIn0.9Mn0.1O3-ZnO nano-pigment exhibiting intense blue color with impressive solar reflectance

The current study reports on the synthesis and characterization of a new inorganic nano-pigment with an intense blue color and high solar radiation reflective properties (70%). The nano-pigment YIn0.9Mn0.1O3-ZnO was synthesized by a sol-gel combustion method and characterized with the aid of X-Ray diffraction, Raman spectroscopy, Magnetic susceptibility, Transmission electron microscopy, UV ndash;vis-NIR diffuse reflectance spectroscopy and CIE-1976 L*a*b* color measurements. The Rietveld refinement of the XRD patterns of the developed nano-pigment disclosed the existence of YIn0.9Mn0.1O3 and ZnO in a 1:1 ratio with hexagonal crystal structures. For comparison, YIn0.9Mn0.1O3 was also synthesized by the sol gel combustion route and its optical properties compared with that of YIn0.9Mn0.1O3-ZnO. It is interesting to note that the developed YIn0.9Mn0.1O3-ZnO nano-pigmeht exhibits superior blue hue (b* = -40.55) and solar reflectance (R* = 70%) values as compared to the YIn0.9Mn0.1O3 nano-pigment (b* = -22.28, R* = 50%). Most importantly, the potential utility of the nano-pigment as a ``Cool Pigment'' was demonstrated by coating onto roofing materials like aluminum roofing sheets. (C) 2015 Elsevier Ltd. All rights reserved.

Ferroelectric origin in one-dimensional undoped ZnO towards high electromechanical response

Ferroelectricity in ZnO is an unlikely physical phenomenon. Here, we show ferroelectricity in undoped 001] ZnO nanorods due to zinc vacancies. Generation of ferroelectricity in a ZnO nanorod effectively increases its piezoelectricity and turns the ZnO nanorod into an ultrahigh-piezoelectric material. Here using piezoelectric force microscopy (PFM), it is observed that increasing the frequency of the AC excitation electric field decreases the effective d(33). Subsequently, the existence of a reversible permanent electric dipole is also found from the P-E hysteresis loop of the ZnO nanorods. Under a high resolution transmission electron microscope (HRTEM), we observe a zinc blende stacking in the wurtzite stacking of a single nanorod along the growth axis. The zinc blende nature of this defect is also supported by the X-ray diffraction (XRD) and Raman spectra. The presence of zinc vacancies in this basal stacking fault modulates p-d hybridization of the ZnO nanorod and produces a magnetic moment through the adjacent oxygen ions. This in turn induces a reversible electric dipole in the non-centrosymmetric nanostructure and is responsible for the ultrahigh-piezoelectric response in these undoped ZnO nanorods. We reveal that this defect engineered ZnO can be considered to be in the competitive class of ultrahigh-piezoelectric nanomaterials for energy harvesting and electromechanical device fabrication.

Anodization of Aluminium using a fast two-step process

Ultra-fast two-step anodization method is developed for obtaining ordered nano-pores on aluminium (Al) foil. First anodization was carried out for 10 min, followed by 3 min of second anodization at high voltage (150 V) compared to previous reports of anodization times of 12 h (40-60 V). The pore dimensions on anodized alumina are 180 nm for pore diameter and 130 nm for inter-pore distance. It was evident that by increasing the anodization voltage to 150 V, the diameter of the pores formed was above 150 nm. The electrolyte and its temperature affect the shape and size of the pore formation. At lower anodization temperature, controlled pore formation was observed. The anodized samples were characterized using the field emission scanning electron microscope (FE-SEM) to determine the pore diameter and inter-pore distance. Using UV-Visible spectroscopy, the reflectance spectra of anodized samples were measured. The alumina (Al2O3) peaks were identified by x-ray diffraction (XRD) technique. The x-ray photo electron spectroscopy (XPS) analysis confirmed the Al 2p peak at 73.1 eV along with the oxygen O 1s at 530.9 eV and carbon traces C 1s at 283.6 eV.

Outstanding dielectric constant and piezoelectric coefficient in electrospun nanofiber mats of PVDF containing silver decorated multiwall carbon nanotubes: assessing through piezoresponse force microscopy

In order to enhance the piezoelectric b-phase, PVDF was electrospun from DMF solution. The enhanced b-phase was discerned by comparing the electrospun fibers against the melt mixed samples. While both the processes resulted in phase transformation of a-to electroactive b-polymorph in PVDF, the fraction of b-phase was strongly dependent on the adopted process. Two different nanoscopic particles: carboxyl functionalized multiwall carbon nanotubes (CNTs) and silver (Ag) decorated CNTs were used to further enhance the piezoelectric coefficient in the electrospun fibers. Fourier transform infrared spectroscopy (FTIR) and wide-angle X-ray diffraction (XRD) supports the development of piezoelectric b-phase in PVDF. It was concluded that electrospinning was the best technique for inducing the b-polymorph in PVDF. This was attributed to the high voltage electrostatic field that generates extensional forces on the polymer chains that aligns the dipoles in one direction. The ferroelectric and piezoelectric measurement on electrospun fibers were studied using piezo-response force microscope (PFM). The Ag-CNTs filled PVDF electrospun fibers showed the highest piezoelectric coefficient (d(33) = 54 pm V-1) in contrast to PVDF/CNT fibers (35 pm V-1) and neat PVDF (30 pm V-1). This study demonstrates that the piezoelectric coefficient can be enhanced significantly by electrospinning PVDF containing Ag decorated nanoparticles.

Study of band offsets at the Cu2SnS3/In2O3: Sn interface using x-ray photoelectron spectroscopy

Cu2SnS3 thins films were deposited onto In2O3: Sn coated soda lime glass substrates by spin coating technique. The films have been structurally characterized using x-ray Diffraction (XRD) and Atomic Force Microscopy (AFM). The morphology of the films was studied using Field Emission Scanning Electron Microscopy (FESEM). The optical properties of the films were determined using UV-vis-NIR spectrophotometer. The electrical properties were measured using Hall effect measurements. The energy band offsets at the Cu2SnS3/In2O3: Sn interface were calculated using x-ray photoelectron spectroscopy (XPS). The valence band offset was found to be -3.4 +/- 0.24 eV. From the valence band offset value, the conduction band offset is calculated to be -1.95 +/- 0.34 eV. The energy band alignment indicates a type-II misaligned heterostructure formation.

Study of band offsets at the Cu2SnS3/In2O3: Sn interface using x-ray photoelectron spectroscopy

Cu2SnS3 thins films were deposited onto In2O3: Sn coated soda lime glass substrates by spin coating technique. The films have been structurally characterized using x-ray Diffraction (XRD) and Atomic Force Microscopy (AFM). The morphology of the films was studied using Field Emission Scanning Electron Microscopy (FESEM). The optical properties of the films were determined using UV-vis-NIR spectrophotometer. The electrical properties were measured using Hall effect measurements. The energy band offsets at the Cu2SnS3/In2O3: Sn interface were calculated using x-ray photoelectron spectroscopy (XPS). The valence band offset was found to be -3.4 +/- 0.24 eV. From the valence band offset value, the conduction band offset is calculated to be -1.95 +/- 0.34 eV. The energy band alignment indicates a type-II misaligned heterostructure formation.

Investigations on structural, magnetic and electronic structure of Gd-doped ZnO nanostructures synthesized using sol-gel technique

GdxZn1-xO (x = 0, 0.02, 0.04 and 0.06) nanostructures have been synthesized using sol-gel technique and characterized to understand their structural and magnetic properties. X-ray diffraction (XRD) results show that Gd (0, 2, 4 and 6 %)-doped ZnO nanostructures crystallized in the wurtzite structure having space group C3(v) (P6(3)mc). Photoluminescence and Raman studies of Gd-doped ZnO powder show the formation of singly ionized oxygen vacancies. X-ray absorption spectroscopy reveals that Gd replaces the Zn atoms in the host lattice and maintains the crystal symmetry with slight lattice distortion. Gd L-3-edge spectra reveal charge transfer between Zn and Gd dopant ions. O K-edge spectra also depict the charge transfer through the oxygen bridge (Gd-O-Zn). Weak magnetic ordering is observed in all Gd-doped ZnO samples.